• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.12
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• pp.806-811
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• 2017

An all-transparent ultraviolet (UV) photodetector was fabricated by structuring $p-NiO/n-SnO_2/ITO$ on a glass substrate. $SnO_2$ is an important semiconductor material because of its large bandgap, high electron mobility, high transmittance (as high as 80% in the visible range), and high stability under UV light. For these reasons, $SnO_2$ is suitable for a range of applications that involve UV light. In order to form a highly transparent p-n junction for UV detection, $SnO_2$ was deposited onto a device containing NiO as a high-transparent metal conductive oxide for UV detection. We demonstrated that all-transparent UV photodetectors based on $SnO_2$ could provide a definitive photocurrent density of $4nA\;cm^{-2}$ at 0 V under UV light (365 nm) and a low saturation current density of $2.02nA{\times}cm^{-2}$. The device under UV light displayed fast photoresponse with times of 31.69 ms (rise-time) and 35.12 ms (fall-time) and a remarkable photoresponse ratio of 69.37. We analyzed the optical and electrical properties of the $NiO/SnO_2$ device. We demonstrated that the excellent properties of $SnO_2$ are valuable in transparent photoelectric device applications, which can suggest various routes for improving the performance of such devices.

• Applied Chemistry for Engineering
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• v.29 no.1
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• pp.97-102
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• 2018

In this work, the surface of gold nanoparticles (AuNPs) was modified with small molecules including mercaptoundecanoic acid (MUA) and L-lysine for the development of highly sensitive lateral flow (LF) sensors. Uniformly sized AuNps were synthesized by a modified Turkevich-Frens method, showing an average size of $16.7{\pm}2.1nm$. Functionalized AuNPs were then characterized by transmission electron microscopy, UV-vis spectroscopy, X-ray photoelectron spectroscopy, and Fourier transform infrared spectroscopy. The stable conjugation of AuNPs and antibodies was obtained at pH 7.07 and the antibody concentration of $10{\mu}g/mL$. The functionalized AuNP-based LF sensor exhibited lower detection limit of 10 ng/mL for hepatitis B surface antigens than that of using the bare AuNP-based LF sensor (100 ng/mL).

• Korean Journal of Optics and Photonics
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• v.15 no.4
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• pp.325-330
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• 2004

We fabricated a vacuum ultraviolet spectre-reflectometer which consists of a deuterium light source, a vacuum monochromator, and a sample chamber and detector module. The operation was performed in the ultraviolet spectral ranges between 115 nm and 330 nm at the vacuum pressure of 3.0 ${\times}$ 10$^{-4}$ Pa. The wavelength of the vacuum monochromator was calibrated with the line spectrum of a low pressure Mercury lamp of 253.652 nm and 184.95 nm wavelengths, and its resolution was 0.012 nm, and the precision of wavelength was $\pm$ 0.03 nm. With this reflectometer and a deuterium lamp, we measured the spectral regular transmittance and reflectance of materials(MgF$_2$, CaF$_2$, BaF$_2$, SiO$_2$, Sapphire) used as optical components over the spectral range between 115 nm and 230 nm.

• Journal of the Korean Chemical Society
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• v.43 no.5
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• pp.517-521
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• 1999

Gas chromatography using sulfur chemiluminescence detection (GC-SCD) which exhibits very good selectivity, linearity, and sensitivity was applied to the analysis of suIfur compounds in gaseous fuel. The expectmental method used in this study was to resolve the problems of repeatability and reproducibility by means of the adsorption of sulfur compounds, which is different from the existing analysis method of these compounds by GC-SCD. The calibration curves of the standard gases including dimethyl sulfide, t-butylmercaptan and ethyl methyl sulfide exhibited an excellent linearity. As the result of precision tests for the above three compounds, the high reproducibility for tests showed while repeating three times during four days, respectively. In addition, the coefficient of variation was less than 3%. In consequence, the expectmental method of this study is very effective not only with low uncertainty but also with better accuracy, which can quickly determine the concentration of gas odorants in LPG (Liquefied Petroleum Gas) from oil reservoirs and filling stations.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.308-308
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• 2011

6.48 ${\AA}$의 격자 상수를 갖는 InSb 물질은 0.17 eV의 낮은 에너지 밴드갭과 78,000 cm2/Vs의 전자 이동도를 갖는 물질로서 고속의 자성 센서소자, 장파장의 광 검출기 그리고 고속 전자소자 등의 분야에서 많은 주목을 받고 있다. 그러나, 전기적 특성이 우수한 InSb 물질을 소자로 구현하는데 있어서 큰 어려움이 있다. InSb와 격자 크기가 잘 맞으면서 절연이 우수한 기판의 부재가 가장 큰 문제가 되는 부분이다. 즉, 격자 부정합을 최소화하며 동시에 절연기판을 사용함으로써 소자의 특성을 잘 살려야 하는 것이다. 이러한 이유로 인하여 InSb 기반의 소자가 널리 사용되지 못하고 있는 것이다. 현재 범용으로 사용하고 있는 기판은 격자 부정합이 14%인 GaAs, 11%의 InP 그리고 18%의 Si 등이 있다. 이번 발표에서는 GaAs 기판 위에 격자 부정합을 최소화하여 InSb 박막을 최적화 시켜 성장하는 방법에 대해서 소개하고자 한다. InSb 박막 성장하는데 있어 논문으로 보고된 여러 가지 방법들이 있다. 기판과의 격자 부정합을 줄이기 위하여 저온-고온 (L-T)의 의한 메타몰픽(metamorphic) buffer 층을 성장 후 InSb 박막을 성장하는 방법[1] 그리고 단계별 buffer를 성장하는 방법[2] 등을 통해서 많은 진보가 있었다. 하지만, 우리는 GaAs 기판 위에 AlSb 박막을 성장 하면서 동시에 In과 Al의 양을 서서히 변화시키는 grading 기술을 사용하였다. 즉, 물질 각각의 격자상수를 고려하여 GaAs (기판)-AlSb-InAlSb-InSb로 변화를 주어 격자 부정합이 최소가 되도록 하여 만들어진 buffer 위에 InSb 층이 만들어 지도록 하여 GaAs 기판 위에 InSb 박막을 성장 할 수 있었다. grading 기술을 이용하여 만들어진 buffer 위에 성장된 0.3 um의 InSb 박막 층은 상온에서 전자 이동도가 약 38,000 cm2/Vs에 이르는 것을 확인하였다. InSb 박막의 두께가 약 1 um 되어야 30,000 cm2/Vs 이상의 전자 이동도를 얻을 수 있다고 많은 논문을 통해서 보고 되고 있으나 우리는 단지 0.3 um의 InSb 박막두께에서 이와 같은 전기적인 특성을 확인하였기에 이상과 같이 보고 하고자 한다.

• Journal of the Semiconductor & Display Technology
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• v.12 no.2
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• pp.13-17
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• 2013

In lighting system where several large-area organic light-emitting diode (OLED) lighting panels are involved, panel aging may appear differently from each other, resulting in a falling-off in lighting quality. To achieve uniform light output across large-area OLED lighting panels, we have employed an optical feedback circuit. Light output from each OLED panel is monitored by the optical feedback circuit that consists of a photodiode, I-V converter, 10-bit analogdigital converter (ADC), and comparator. A photodiode generates current by detecting OLED light from one side of the glass substrate (i.e., edge emission). Namely, the target luminance from the emission area (bottom emission) of OLED panels is monitored by current generated from the photodiode mounted on a glass edge. To this end, we need to establish a mapping table between the ADC value and the luminance of bottom emission. The reference ADC value corresponds to the target luminance of OLED panels. If the ADC value is lower or higher than the reference one (i.e., when the luminance of OLED panel is lower or higher than its target luminance), a micro controller unit (MCU) adjusts the pulse width modulation (PWM) used for the control of the power supplied to OLED panels in such a way that the ADC value obtained from optical feedback is the same as the reference one. As such, the target luminance of each individual OLED panel is unchanged. With the optical feedback circuit included in the lighting system, we have observed only 2% difference in relative intensity of neighboring OLED panels.

• Analytical Science and Technology
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• v.17 no.2
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• pp.98-107
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• 2004

In this study, $^1H$ NMR spectroscopy and HPLC were used to identify the type and quantity of each component in an acrylic coating materials applied for an automotive part. By the $^1H$ NMR analysis, it was found that this acrylic coating contained about 88.40 wt% of poly methyl methacrylate (PMMA), 7.05 wt% of methyl methacrylate (MMA), and 2.36 wt% of allyl methacrylate. Polymer additives such as a benzotriazole light stabilizer (Hisorb 328), an oxanilide light stabilizer, butylated hydroxy toluene (BHT), and dimethyl phthalate (DMP) were also identified and measured quantitatively from the $^1H$ NMR spectra. However, only two light stabilizers were identified by reverse phase (RP) HPLC analysis using Bondapak C18 column, methanol mobile phase, and a PDA (Photodiode array) detector. The contents of two light stabilizers in the acrylic coating were measured by a quantitative analysis through UV-Vis spectroscopy and compared with the NMR data. The analytical informations from $^1H$ NMR spetra were better than those from HPLC-PDA plot.

• Analytical Science and Technology
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• v.16 no.3
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• pp.240-248
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• 2003

Sulfur compounds which are well-known odor-active compounds in industrial area have very low detection threshold values. Trace amounts of volatile sulfur compounds in enviroment air around several odor sources were concentrated in liquid argon bath and determined by gas chromatograph with flame photometric detector (FPD) which exhibits very good selectivity and sensitivity. 25% ${\beta}$,${\beta}$-Oxydipropionitrile on 60/80 Chromosorb W was used as adsorbent for the preconcentration of sulfur compounds in air sample and also as packing material for a packed glass column. Concentration volume of air sample was different from place to place in the range of 0.1~3.0L. Atmospheric concentrations of sulfur compounds in air of residential districts and boundaries of business establishments, and also those in the exhausted gases of emission points such as a sewage disposal plant in industrial area were measured.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.390-392
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• 2005

The digital radiation detectors are used clinically by diagnostic apparatus. However the digital radiation detector are some problem like high operating voltage, light blurring, low conversion efficiency, low fill factor, etc. Thus we propose a new radiation detector that the photoconductor layer and liquid crystal layer are coupled in sandwich structure. X-ray absorption in the photoconductor layer controls the state of the liquid crystal via creation of charge carrier and the light modulation of liquid crystal make image formation. The advantage of the new radiation detector is that high resolution image is acquired and the signal amplification is possible by external visible light source. In this study, we study the optical properties and electrical properties of the new radiation detector to irradiate X-ray. The Mercury Iodide($HgI_2$) was used by photoconductor material, and the aluminum is used by reflective layer. The thickness of Mercury Iodide is about $200{\mu}m$, the operating voltage of the liquid crystal is 1.5~5V. The electrical properties of Mercury Iodide was measured, and the transmission efficiency of liquid crystal was measured by modulation potential.

• Journal of Sensor Science and Technology
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• v.30 no.2
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• pp.114-118
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• 2021

In this study, the sensitivity of an active pixel sensor (APS) was adjusted by employing a gate/body-tied (GBT) p-channel metal-oxide semiconductor field-effect transistor (PMOSFET)-type photodetector with a transfer gate. A GBT PMOSFET-type photodetector can amplify the photocurrent generated by light. Consequently, APSs that incorporate GBT PMOSFET-type photodetectors are more sensitive than those APSs that are based on p-n junctions. In this study, a transfer gate was added to the conventional GBT PMOSFET-type photodetector. Such a photodetector can adjust the sensitivity of the APS by controlling the amount of charge transmitted from the drain to the floating diffusion node according to the voltage of the transfer gate. The results obtained from conducted simulations and measurements corroborate that, the sensitivity of an APS, which incorporates a GBT PMOSFET-type photodetector with a built-in transfer gate, can be adjusted according to the voltage of the transfer gate. Furthermore, the chip was fabricated by employing the standard 0.35 ㎛ complementary metal-oxide semiconductor (CMOS) technology, and the variable sensitivity of the APS was thereby experimentally verified.