• Journal of the Mineralogical Society of Korea
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• v.18 no.3 s.45
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• pp.147-153
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• 2005

Naldrettite, recently discovered in the Mesamax Northwest deposit, Ungava region, northern Quebec, Canada, was reported as a new mineral. In order to confirm whether itis a natural equivalent of synthetic $Pd_2Sb$ phase or not, the pure $Pd_2Sb$ phase has been synthesized and investigated by reflected microscope, electron microprobe analyser, X-ray diffractometer, and micro-indentation hardness tester. Under reflected light synthetic $Pd_2Sb$ Phase is white with a creamy tint in both air and oil and weakly bireflectant. Anisotropism is strong, from brownish gray to greenish blue in air. Micro-indentation hardness test gives VHN100=293(242-322). Composition of the phase is $63.7\~64.3wt.\%\;Pd\;and\; 36.4\~36.8wt.\%$ Sb, and is entirely consistent. The phase, quenched from $500^{\circ}C$, is orthorhobic with space group $Cmc2_1$, and the cell parameters are a=3.366(1), b=17.523(3), c=6.929(2) ${\AA}$. All mineralogical properties of synthetic $Pd_2Sb$ compare very well with those of naldrettite, confirming that naldrettite is the natural analogue of the synthetic $Pd_2Sb$ phase.

• Journal of the Korean Ceramic Society
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• v.38 no.11
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• pp.1008-1014
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• 2001

Nanosize YIG powders added by Cerium which is exellent element in magneto-optical effect were synthesized by Sol-Gel method using Ethylene Glycol solvent. In 120 to 150 minute reaction time, stable sol solution which showed no change in viscosity, pH, and aging time was obtained. Monolithic YIG was synthesized at 80$0^{\circ}C$ with DTA and XRD measurement and its lattice parameter had a tendency to increase from 12.3921 $\AA$. Increasing annealing temperature from 80$0^{\circ}C$ to 105$0^{\circ}C$, average particle size was in the range of 40 nm to 330 nm. Saturation magnetization (M$_{s}$) value was increased from 18.37 to 21.25 emu/g due to enhancement of YIG crystallity and decreasing of orthoferrite phase. On the other hand, coercivity (H$_{c}$) value increased up to 90$0^{\circ}C$ and then decreased above 90$0^{\circ}C$. With increasing Ce addition, coercivity was almost not changed but saturation magnetization value was maximum at Ce 0.1 mol% and then decreased because of increasing a orthoferrite amount. Also, curie temperature (T$_{c}$) of YIG were not changed with Ce addition.ion.

• The Journal of the Convergence on Culture Technology
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• v.10 no.3
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• pp.13-17
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• 2024

A color sensor is an optical sensor used to take pictures of objects, including the human body, and reproduce them on a monitor. A color sensor quantifies the red, green, and blue light coming from an object and expresses it as a digital number, and can judge the state of the object by comparing the values ​​or the ratio.In this study, the standard colors displayed on the monitor were measured using a color sensor, and the magnitudes of the red, green, and blue components, or RGB values, were compared with the values ​​indicated by the computer. When measured with the TCS 34725 color sensor, even when the light generated by the computer consists of only one or two of red, green, and blue light, the color sensor detected all three components. Additionally, when the colors of two monitors with the same RGB values ​​were measured using a color sensor, different RGB values ​​were measured. These results can be attributed to the imperfection of the color filters used to express colors on the monitor and the imperfect optical characteristics of the photodiodes used in the color sensor. When photographing an object and judging its condition based on its color, you must use the same type of camera or smartphone.

• Korean Journal of Optics and Photonics
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• v.14 no.1
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• pp.23-32
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• 2003

The spectroe-ellipsometric constant $\Delta$, Ψ and the ellipsometric growth curves at the wavelength of 632.8 nm are collected. These are critically examined to find out the optimum growth condition of phase change $Ge_2Sb_2Te_5(GST)$ thin films as an optical recording medium. GST films are prepared using DC magnetron sputtering technique, under the selected experimental conditions of Ar gas pressure (5 mTorr, 7 mTorr and 10 mTorr), DC power of sputtering gun (15 W, 30 W and 45 W), and substrate temperature (from room temperature to 18$0^{\circ}C$). Based on the three film model, the density distribution of deposited GST films are obtained versus Ar gas pressure and DC power by analyzing spectro-ellipsometric data. The calculated evolution curves at the wavelength of 632.8 nm, are fit into the in situ observed ones to get information about the evolution of density distribution during film growth. The density distribution showed different evolution curves depending on deposition conditions. The GST films fabricated at DC power of 30 W or 45 W, and at Ar gas pressure of 7 mTorr turned out to be the most homogeneous one out of those prepared at room temperature, even though the maximum density difference between the dense region and the dilute region of the GST film was still significant (~50%). Finally, in order to find the optimum growth condition of homogeneous GST thin films, the substrate temperature is varied while Ar gas pressure is fixed at 7 mTorr and DC power at 30 W and 45 W respectively. A monotonic decrease of void fraction except for a slight increase at 18$0^{\circ}C$ is observed as the substrate temperature increases. Decrease of void fraction indicates an increase of film density and hence an improvement of film homogeneity. The optimum condition of the most homogeneous GST film growth turned out to be 7 mTorr of Ar gas pressure, 15$0^{\circ}C$ of substrate temperature. and 45 W of DC power. The microscopic images obtained using scanning electron microscope, of the samples prepared at the optimum growth condition, confirmed this conclusion. It is believed that the fabrication of homogeneous GST films will be quite beneficial to provide a reliable optical recording medium compatible with repeated write/erase cycles.

• Journal of Korean Ophthalmic Optics Society
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• v.16 no.4
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• pp.357-362
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• 2011

Purpose: The narrow-band pass color-filters with a 500 nm central wavelength and 12 nm FWHM using $Ti_3O_5/SiO_2$ mutilayer were fabricated, and their characteristics and structures were studied. Methods: the optical constants, n and k, of the $Ti_3O_5$ and $SiO_2$ thin films were obtained from the transmittances of their thin film. The narrow-band pass color-filters were designed with these optical constants and the AR coating of the filter was also designed. $Ti_3O_5/SiO_2$ multilayer filters were made by electron beam evaporation apparatus and the transmittaces of the filters were measured by spectrophotometer. the number of layers and the thicknesses of filters were calculated from the cross section of filters by SEM image and the composition of filters was analysed by XPS analysis. Results: The optimization of AR coating for the narrow-band pass color-filter was [air$|SiO_2(90)|Ti_3O_5(36)|SiO_2(5)|Ti_3O_5(73)|SiO_2(30)|Ti_3O_5(15)|$ glass], and the optimization of filter layer for the color filter was [air$|SiO_2(192)|Ti_3O_5(64)|SiO_2(102)|Ti_3O_5(66)|SiO_2(112)|Ti_3O_5(74)|SiO_2(120)|Ti_3O_5(68)|SiO_2(123)|Ti_3O_5(80)|SiO_2(109)|Ti_3O_5(70)|SiO_2(105)|Ti_3O_5(62)|SiO_2(99)|Ti_3O_5(63)|SiO_2(98)|Ti_3O_5(51)|SiO_2(60)|Ti_3O_5(42)|SiO_2(113)|Ti_3O_5(88)|SiO_2(116)|Ti_3O_5(68)|SiO_2(89)|Ti_3O_5(49)|SiO_2(77)|Ti_3O_5(48)|SiO_2(84)|Ti_3O_5(51)|SiO_2(85)|Ti_3O_5(48)|SiO_2(59)|Ti_3O_5(34)|SiO_2(71)|Ti_3O_5(44)|SiO_2(65)|Ti_3O_5(45)|SiO_2(81)|Ti_3O_5(52)|SiO_2(88)|$ glass]. It was known that the color-filters fabricated by the simulation data were composed of 41 layers by SEM image and the top layer of filters was $SiO_2$ layer and the filters were composed of $SiO_2$/$Ti_3O_5$ multilayer by XPS analysis. It was also known that the mixed thin film of TiO2 and $Ti_3O_5$ was made during the deposition of the $Ti_3O_5$ material. Conclusions: The narrow-band pass color-filters with a 500 nm central wavelength and 12 nm FWHM using $Ti_3O_5/SiO_2$ mutilayer of 41 layer were fabricated, and it was known that the mixed form of TiO2 and $Ti_3O_5$ thin film was made during the deposition of the $Ti_3O_5$ material.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.3
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• pp.99-104
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• 2011

A stoichiometric mixture of evaporating materials for $MgGa_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. The crystal structure of these compounds has a rhombohedral structure with lattice constants $a_0=3.953\;{\AA}$, $c_0=38.890\;{\AA}$. To obtain the single crystal thin films, $MgGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the double crystal X-ray rocking curve and X-ray diffraction ${\omega}-2{\theta}$ scans. The carrier density and mobility of $MgGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method were $6.21{\times}10^{18}\;cm^{-3}$ and 248 $cm^2/v{\cdot}s$ at 293 K, respectively. The optical absorption of $MgGa_2Se_4$ single crystal thin films was investigated in the temperature range from 10 K to 293 K. The temperature dependence of the optical energy gap of the $MgGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's equation, $E_g(T)=E_g(0)-({\alpha}T^2/T+{\beta})$. The constants of Varshni's equation had the values of $E_g(0)=2.34\;eV$, ${\alpha}=8.81{\times}10^{-4}\;eV/K$ and ${\beta}=251\;K$, respectively.

• Journal of the Korean Vacuum Society
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• v.18 no.6
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• pp.459-467
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• 2009

$Cd_2GeSe_4$ and $Cd_2GeSe_4:Co^{2+}$ films were prepared on indium-tin-oxide(ITO)-coated glass substrates by using thermal evaporation. The crystallization was achieved by annealing the as-deposited films in flowing nitrogen. X-ray diffraction spectra showed that the $Cd_2GeSe_4$ and the $Cd_2GeSe_4:Co^{2+}$ films were preferentially grown along the (113) orientation. The crystal structure was rhomohedral(hexagonal) with lattice constants of $a=7.405\;{\AA}$ and $c=36.240\;{\AA}$ for $Cd_2GeSe_4$ and $a=7.43\;{\AA}$ and $c=36.81\;{\AA}$ for $Cd_2GeSe_4:Co^{2+}$ films. From the scanning electron microscope images, the $Cd_2GeSe_4$ and $Cd_2GeSe_4:Co^{2+}$ films were plated, and the grain size increased with increasing annealing temperature. The optical energy band gap, measured at room temperature, of the as-deposited $Cd_2GeSe_4$ films was 1.70 eV and increased to about 1.74 eV and of the as-deposited $Cd_2GeSe_4:Co^{2+}$ films was 1.79 eV and decreased to about 1.74 eV upon annealing in flowing nitrogen at temperatures from $200^{\circ}C$ to $500^{\circ}C$. The dynamical behavior of the charge carriers in the $Cd_2GeSe_4$ and $Cd_2GeSe_4:Co^{2+}$ films were investigated by using the photoinduced discharge characteristics technique.