• Journal of the Korean Vacuum Society
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• v.10 no.3
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• pp.350-355
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• 2001

We have investigated characteristics of ZnSe epilayer grown by molecular beam epitaxy(MBE) on semi-insulating(SI) GaAs by using surface photovoltage(SPV). The measurements of SPV were performed with illumination intensity and modulation frequency. The bandgap energy of ZnSe epilayer was determined from derivative surface photovoltage (DSPV). The five states were observed at room temperature(RT), and those states relate to the impurity and defect formed hetero-interface of ZnSe and GaAs during the sample growth. The observed states represented as a tendency of typical extrinsic transition on the increasing illumination intensity. The 1s and 2s signals related to the excitonic absorption were not observed at RT, but those were presented with the splitted of two peaks in the SPV at 80 K. From the modulation frequency dependence, we obtained the junction conductance and capacitance of the sample.

• Journal of the Korean Vacuum Society
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• v.9 no.2
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• pp.116-121
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• 2000

We measured surface photovoltage (SPV) of $Al_{0.24}Ga_{0.76}As/GaAs$ epilayer grown by molecular beam epitixy (MBE). The band gap energies of $Al_{0.24}Ga_{0.76}As/GaAs$ epilayer, GaAs substrate and buffer layer obtained from SPV signals are 1.70, 1.40 and 1.42 eV, respectively. There results are in good agreements with photoreflectance (PR) measurement. The measured SPV intensity of GaAs substrate is three times larger than $Al_{0.24}Ga_{0.76}$Asepilayer by carrier mobility difference. The parameters of Varshni equation were determined from the SPV spectra as a function of temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.1
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• pp.21-27
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• 2000

We used the surface photovoltage spectroscopy(SPVS) for characterization of GaAs/Al\ulcornerGa\ulcornerAs multi-quantum well(MQW) structures grown by molecular beam epitaxy(MBE) method. Energy gap related transitions in GaAs and AlGaAs were observed. The Al composition(x=0.3) was determined by Sek's composition formula. Transition energies in MQW were determined using the differential surface photo-volatage spectroscopy)DSPVS) of the measured resonanced. In order to indentify the transitions, the experimentally observed energies were compared with results of the envelope function approximation for a rectangular quantum well. We have observed and interesting behavior of the temperature dependence(80K~300K) of the 11Hand 11L transition for sample.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2000.05a
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• pp.493-496
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• 2000

This study is about the design and fabrication of optical voltage sensor modules improved in the insulation reliability, where we adopted the space-division voltage system using the auxiliary electrodes to apply the uniform electric fields to the BSO, the device of which the polarization state varies with the variation of refractive index in the electric fields. We measured the output of fiber-Optic Voltage Sensors with the temperature changes in the thermostatic oven. And we measured the output of Fiber-Optic Voltage Sensors after setting its up in the disttibuion automated switch being apply 60Hz alternating voltage from 6.6kV to 17.BkV. In result, measured error characteristic is good, so we can judge it is applicable to the practical case

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.81-86
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• 2001

We have investigated surface photovoltage characteristics of InGaAs grown by metalorganic chemical vapor deposition (MOCVD) method on semi-insulating GaAs. The splitted SPV signals from the substrate and epilayer were observed. The band gap energy of InGaAs was about 1.376 eV, The In composition(x) was determined by Pan's composition formula. The photovoltage gradually decreases with increasing frequency. This is because the transfer of charge from the surface states reduces. From the temperature dependent SPV measurement, we obtained Varshni and temperature coefficients. In spectrum of etched sample at 300 K, the 'A' peak below $E_o(GaAs)$ is related with residual impurity during sample growth.

• Proceedings of the Materials Research Society of Korea Conference
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• 1994.11a
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• pp.30-30
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• 1994

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.154.1-154
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• 2000

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.05a
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• pp.32-32
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• 1999

• Journal of the Korean Vacuum Society
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• v.19 no.5
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• pp.353-359
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• 2010

We report the surface photovoltage (SPV) properties of $In_{0.49}Ga_{0.51}P$/GaAs heterostructure grown by metal-organic chemical vapour deposition (MOCVD). The SPV measurements were studied as a function of modulation beam intensity, modulation frequency and temperature. From a line shape analysis of room temperature derivative surface photovoltage (DSPV) spectrum, the band gap energies for GaAs and $In_{0.49}Ga_{0.51}P$ transitions were 1.400 and 1.893 eV respectively. The surface photovoltage (SPV) increases with increasing the light intensity and temperature, whereas the SPV decreases with increasing the modulation frequency. From the temperature variation of the energy gaps, we have analysis by both Varshni and Bose-Einstein type expressions.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.6 no.1
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• pp.89-98
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• 2002

Optical current sensor and optical voltage sensor modules were designed and fabricated to improve measurement error and insulation in automatic power distributor By using Faraday effect, optical current sensor with an $\alpha$-iron core was designed and fabricated to minimize current induction of the other phase and was optimized to maintain linearity. Optical voltage sensor was fabricated owing to the pockets effect and adopted spatial electric field type because of small room in an automatic power distributor. To connect a distributor with an external terminal for signal processing, optical multi connector was designed, fabricated and tested for coupling loss and gas leakage. The linearity of optical current sensor for applied current maintains variation of smaller than 2.5% for applied current range from 20A to 700A. The linearity of optical voltage sensor was smaller than 1% for appling voltage from 6.6kV to 19.8kV. Since the measured characteristics are good, these devices can be considered as being applicable in practice.