• Title/Summary/Keyword: 광변환

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Implant Isolation Characteristics for 1.25 Gbps Monolithic Integrated Bi-Directional Optoelectronic SoC (1.25 Gbps 단일집적 양방향 광전 SoC를 위한 임플란트 절연 특성 분석)

  • Kim, Sung-Il;Kang, Kwang-Yong;Lee, Hai-Young
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.44 no.8
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    • pp.52-59
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    • 2007
  • In this paper, we analyzed and measured implant isolation characteristics for a 1.25 Gbps monolithic integrated hi-directional (M-BiDi) optoelectronic system-on-a-chip, which is a key component to constitute gigabit passive optical networks (PONs) for a fiber-to-the-home (FTTH). Also, we derived an equivalent circuit of the implant structure under various DC bias conditions. The 1.25 Gbps M-BiDi transmit-receive SoC consists of a laser diode with a monitor photodiode as a transmitter and a digital photodiode as a digital data receiver on the same InP wafer According to IEEE 802.3ah and ITU-T G.983.3 standards, a receiver sensitivity of the digital receiver has to satisfy under -24 dBm @ BER=10-12. Therefore, the electrical crosstalk levels have to maintain less than -86 dB from DC to 3 GHz. From analysed and measured results of the implant structure, the M-BiDi SoC with the implant area of 20 mm width and more than 200 mm distance between the laser diode and monitor photodiode, and between the monitor photodiode and digital photodiode, satisfies the electrical crosstalk level. These implant characteristics can be used for the design and fabrication of an optoelectronic SoC design, and expended to a mixed-mode SoC field.

UBVI CCD Photometry of NGC 7790 (NGC 7790의 UBVI CCD 측광)

  • Choi, Dong Yeol;Kim, Hee Soo;Lim, Beomdu;Sung, Hwankyung
    • Journal of the Korean earth science society
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    • v.36 no.7
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    • pp.661-673
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    • 2015
  • UBVI CCD photometry of the intermediate age open cluster NGC 7790 has been obtained using AZT-22 1.5 m telescope (f/7.74) at the Maidanak Astronomical Observatory in Uzbekistan. NGC 7790 contains three ${\delta}$ Cep variable stars including CEa Cas, CEb Cas, and CF Cas. PSF photometry was carried out using IRAF/DAOPHOT for all observations. The total number of stars observed both in V and I filter was 1008 and the limiting magnitude was $V{\approx}22$. To determine atmospheric extinction coefficients and photometric zero points, many blue and red standard stars as well as the standard stars in the celestial equator under various airmass were observed. Photometric data were transformed into the standard Johnson-Cousins' UBVI standard system. From the analysis of UBVI color-magnitude diagram and color-color diagram, the color excess in V and I filter [$E(B-V)=0.58{\pm}0.02$], the selective extinction ratio in V and I filter [$R_V{\equiv}A_V/E(B-V)=3.02{\pm}0.09$] and distance modulus ($V_0-M_V=12.65{\pm}0.10$) of the cluster were determined. The age of the cluster was estimated to be log $age=8.05{\pm}0.05$ [yr] based on the position of these three Cepheid variables in the color-magnitude diagram, the isochrone of the Geneva group ($Ekstr{\ddot{o}}m$ et al., 2012-Z=0.019), and the isochrone of the Padova group (Bressan et al., 2012-Z=0.014) were used to compare each other. Of them, the Geneva models that considered stellar rotation well described the position of ${\delta}$ Cepheid variables in the blue loop. Although they were well consistent with standard period-luminosity relation of ${\delta}$ Cepheid variables, three Cepheid variables in NGC 7790 were, on average, brighter by about 0.5 mag than the absolute magnitude estimated from the mean period-luminosity relation at a given period.

Quantitative Analysis of Digital Radiography Pixel Values to absorbed Energy of Detector based on the X-Ray Energy Spectrum Model (X선 스펙트럼 모델을 이용한 DR 화소값과 디텍터 흡수에너지의 관계에 대한 정량적 분석)

  • Kim Do-Il;Kim Sung-Hyun;Ho Dong-Su;Choe Bo-young;Suh Tae-Suk;Lee Jae-Mun;Lee Hyoung-Koo
    • Progress in Medical Physics
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    • v.15 no.4
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    • pp.202-209
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    • 2004
  • Flat panel based digital radiography (DR) systems have recently become useful and important in the field of diagnostic radiology. For DRs with amorphous silicon photosensors, CsI(TI) is normally used as the scintillator, which produces visible light corresponding to the absorbed radiation energy. The visible light photons are converted into electric signal in the amorphous silicon photodiodes which constitute a two dimensional array. In order to produce good quality images, detailed behaviors of DR detectors to radiation must be studied. The relationship between air exposure and the DR outputs has been investigated in many studies. But this relationship was investigated under the condition of the fixed tube voltage. In this study, we investigated the relationship between the DR outputs and X-ray in terms of the absorbed energy in the detector rather than the air exposure using SPEC-l8, an X-ray energy spectrum model. Measured exposure was compared with calculated exposure for obtaining the inherent filtration that is a important input variable of SPEC-l8. The absorbed energy in the detector was calculated using algorithm of calculating the absorbed energy in the material and pixel values of real images under various conditions was obtained. The characteristic curve was obtained using the relationship of two parameter and the results were verified using phantoms made of water and aluminum. The pixel values of the phantom image were estimated and compared with the characteristic curve under various conditions. It was found that the relationship between the DR outputs and the absorbed energy in the detector was almost linear. In a experiment using the phantoms, the estimated pixel values agreed with the characteristic curve, although the effect of scattered photons introduced some errors. However, effect of a scattered X-ray must be studied because it was not included in the calculation algorithm. The result of this study can provide useful information about a pre-processing of digital radiography.

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Development of Prediction Model for the Na Content of Leaves of Spring Potatoes Using Hyperspectral Imagery (초분광 영상을 이용한 봄감자의 잎 Na 함량 예측 모델 개발)

  • Park, Jun-Woo;Kang, Ye-Seong;Ryu, Chan-Seok;Jang, Si-Hyeong;Kang, Kyung-Suk;Kim, Tae-Yang;Park, Min-Jun;Baek, Hyeon-Chan;Song, Hye-Young;Jun, Sae-Rom;Lee, Su-Hwan
    • Korean Journal of Agricultural and Forest Meteorology
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    • v.23 no.4
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    • pp.316-328
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    • 2021
  • In this study, the leaf Na content prediction model for spring potato was established using 400-1000 nm hyperspectral sensor to develop the multispectral sensor for the salinity monitoring in reclaimed land. The irrigation conditions were standard, drought, and salinity (2, 4, 8 dS/m), and the irrigation amount was calculated based on the amount of evaporation. The leaves' Na contents were measured 1st and 2nd weeks after starting irrigation in the vegetative, tuber formative, and tuber growing periods, respectively. The reflectance of the leaves was converted from 5 nm to 10 nm, 25 nm, and 50 nm of FWHM (full width at half maximum) based on the 10 nm wavelength intervals. Using the variance importance in projections of partial least square regression(PLSR-VIP), ten band ratios were selected as the variables to predict salinity damage levels with Na content of spring potato leaves. The MLR(Multiple linear regression) models were estimated by removing the band ratios one by one in the order of the lowest weight among the ten band ratios. The performance of models was compared by not only R2, MAPE but also the number of band ratios, optimal FWHM to develop the compact multispectral sensor. It was an advantage to use 25 nm of FWHM to predict the amount of Na in leaves for spring potatoes during the 1st and 2nd weeks vegetative and tuber formative periods and 2 weeks tuber growing periods. The selected bandpass filters were 15 bands and mainly in red and red-edge regions such as 430/440, 490/500, 500/510, 550/560, 570/580, 590/600, 640/650, 650/660, 670/680, 680/690, 690/700, 700/710, 710/720, 720/730, 730/740 nm.

Dynamic Response of Tension Leg Platform (Tension Leg Platform의 동적응답에 관한 연구)

  • Yeo, Woon Kwang;Pyun, Chong Kun
    • KSCE Journal of Civil and Environmental Engineering Research
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    • v.5 no.1
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    • pp.21-30
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    • 1985
  • The tension leg platform (TLP) is a kind of compliant structures, and is also a type of moored stable platform with a buoyancy exceeding the weight because of having tensioned vertical anchor cables. In this paper, among the various kinds of tension leg structures, Deep Oil Technology (DOT) TLP was analyzed because it has large-displacement portions of the immersed surface such as vertical corner pontoons and small-diameter elongated members such as cross-bracing. It also has results of hydraulic model tests, comparable with theorectical analysis. Because of the vertical axes of symmetry in the three vertical buoyant legs and because there are no larger horizontal buoyant members between these three vertical members, it was decided to develop a numerical algorithm which would predict the dynamic response of the DOT TLP using the previously developed numerical algorithm Floating Vessel Response Simulation (FVRS) for vertically axisymmetric bodies of revolution. In addition, a linearized hydroelastic Morison equation subroutine would be developed to account for the hydrodynamic pressure forces on the small member cross bracing. Interaction between the large buoyant members or small member cross bracings is considered to be negligible and is not included in the analysis. The dynamic response of the DOT TLP in the surge mode is compared with the results of the TLP algorithm for various combinations of diffraction and Morison forces and moments. The results which include the Morison equation are better than the results for diffraction only. This is because the vertically axisymmetric buoyant members are only marginally large enough to consider diffractions effects. The prototype TLP results are expected to be more inertially dominated.

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Analysis of Occlusal Contacts Using Add-picture Method (Add-picture 방법을 이용한 교합접촉점 분석)

  • Park, Ko-Woon;Cho, Lee-Ra;Kim, Dae-Gon;Park, Chan-Jin
    • Journal of Dental Rehabilitation and Applied Science
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    • v.29 no.1
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    • pp.45-58
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    • 2013
  • The purpose of this study was to analyze the area of occlusal contact points using visual method. One subject was selected who had Angle Class I, normal dentition, without dental caries, periodontal disease and temporomandibular disorders. Forty times PVS impressions were taken and 10 pairs casts were fabricated using dental super hard stone. After mounting the casts with customized loading apparatus, 78.9kg/f force was loaded as a maximum biting force. In T-Scan method, occlusal contact points measurement was repeated twice. Then, using Photoshop program (Adobe photoshop CS3, Adobe. San Jose, USA), the pixels which indicated occlusal contact points by color was recognized, and the distribution of recognized pixels were calculated to area. In Add picture method, polyether bite material applied to the occlusal surface of the casts. Then, the image of the translucent areas was recorded and classified $0{\sim}10{\mu}m$, $0{\sim}30{\mu}m$, $0{\sim}60{\mu}m$ area by the amount of transmitted light. To acquire occlusal surface, the numbers of pixels from the photograph of the contact area indicated cast converted to $mm^2$. The mean occlusal contact area by two methods was statistically analyzed (paired t-test). Part of the red and pink area in T-Scan image were almost equivalent to the $0{\sim}10{\mu}m$, $0{\sim}30{\mu}m$, $0{\sim}60{\mu}m$ area in Add picture image. The distribution of occlusal contact points were similar, but the average area of occlusal contact points was wider in T-scan image (P<.05). Pink and red area in T-scan image was wider than $0{\sim}10{\mu}m$, $0{\sim}30{\mu}m$ area in Add picture image (P<.05), but similar to $0{\sim}60{\mu}m$area in Add picture image (P>.05). Occlusal contact points in T-scan image did not indicate real occlusal contact points. Occlusal contact areas in T-scan method were enlarged results comparing with those in Add picture method.

A Study of Mo Back Electrode for CIGSe2 Thin Film Solar Cell (CIGSe2 박막태양전지용 Mo 하부전극의 물리·전기적 특성 연구)

  • Choi, Seung-Hoon;Park, Joong-Jin;Yun, Jeong-Oh;Hong, Young-Ho;Kim, In-Soo
    • Journal of the Korean Vacuum Society
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    • v.21 no.3
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    • pp.142-150
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    • 2012
  • In this Study, Mo back electrode were deposited as the functions of various working pressure, deposition time and plasma per-treatment on sodalime glass (SLG) for application to CIGS thin film solar cell using by DC sputtering method, and were analyzed Mo change to $MoSe_2$ layer through selenization processes. And finally Mo back electrode characteristics were evaluated as application to CIGS device after Al/AZO/ZnO/CdS/CIGS/Mo/SLG fabrication. Mo films fabricated as a function of the working pressure from 1.3 to 4.9mTorr are that physical thickness changed to increase from 1.24 to 1.27 ${\mu}m$ and electrical characteristics of sheet resistance changed to increase from 0.195 to 0.242 ${\Omega}/sq$ as according to the higher working pressure. We could find out that Mo film have more dense in lower working pressure because positive Ar ions have higher energy in lower pressure when ions impact to Mo target, and have dominated (100) columnar structure without working pressure. Also Mo films fabricated as a function of the deposition time are that physical thickness changed to increase from 0.15 to 1.24 ${\mu}m$ and electrical characteristics of sheet resistance changed to decrease from 2.75 to 0.195 ${\Omega}/sq$ as according to the increasing of deposition time. This is reasonable because more thick metal film have better electrical characteristics. We investigated Mo change to $MoSe_2$ layer through selenization processes after Se/Mo/SLG fabrication as a function of the selenization time from 5 to 40 minutes. $MoSe_2$ thickness were changed to increase as according to the increasing of selenization time. We could find out that we have to control $MoSe_2$ thickness to get ohmic contact characteristics as controlling of proper selenization time. And we fabricated and evaluated CIGS thin film solar cell device as Al/AZO/ZnO/CdS/CIGS/Mo/SLG structures depend on Mo thickness 1.2 ${\mu}m$ and 0.6 ${\mu}m$. The efficiency of CIGS device with 0.6 ${\mu}m$ Mo thickness is batter as 9.46% because Na ion of SLG can move to CIGS layer more faster through thin Mo layer. The adhesion characteristics of Mo back electrode on SLG were improved better as plasma pre-treatment on SLG substrate before Mo deposition. And we could expect better efficiency of CIGS thin film solar cell as controlling of Mo thickness and $MoSe_2$ thickness depend on Na effect and selenization time.

Sputtering방식을 이용한 Indium Thin oxide박막의 넓이에 따른 X-ray 검출기 특성 연구

  • Kim, Dae-Guk;Sin, Jeong-Uk;O, Gyeong-Min;Kim, Seong-Heon;Lee, Yeong-Gyu;Jo, Seong-Ho;Nam, Sang-Hui
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.321-322
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    • 2012
  • 의료용 방사선 장비는 초기의 아날로그 방식의 필름 및 카세트에서 진보되어 현재는 디지털 방식의 DR (Digital Radiography)이 널리 사용되며 그에 관한 연구개발이 활발히 진행되고 있다. DR은 크게 간접방식과 직접방식의 두 분류로 나눌 수 있는데, 간접방식은 X선을 흡수하면 가시광선으로 전환하는 형광체(Scintillator)를 사용하여 X선을 가시광선으로 전환하고, 이를 Photodiode와 같은 광소자로 전기적 신호로 변환하여 방사선을 검출하는 방식을 말하며, 직접 방식은 X선을 흡수하면 전기적 신호를 발생 시키는 광도전체(Photoconductor)를 사용하여 광도전체 양단 전극에 고전압을 인가한 형태를 취하고 있는 가운데, X선이 조사되면 일차적으로 광도전체 내부에서 전자-전공쌍(Electron-hole pair)이 생성된다. 이들은 광도전체 양단의 인가되어 있는 전기장에 의해 전자는 +극으로, 전공은 -극으로 이동하여 아래에 위치한 Active matrix array을 통해 방사선을 검출하는 방식이다. 본 연구에서는 직접방식 X-ray 검출기에서 활용되는 a-Se을 ITO (Indium Thin oxide) glass 상단에 Thermal evaporation증착을 이용하여 두께 $50{\mu}m$, 33 넓이로 증착 시킨 다음, a-Se상단에 Sputtering증착을 이용하여 ITO를 11 cm, 22 cm, $2.7{\times}2.7cm$ 넓이로 증착시켜 상하부의 ITO를 Electrode로 이용하여 직접방식의 X-ray검출기 샘플을 제작하였다. 제작 과정 중 a-Se의 Thermal evaporation증착 시, 저진공 $310^{-3}_{Torr}$, 고진공 $2.210^{-5}_{Torr}$에서 보트의 가열 온도를 두 번의 스텝으로 나누어 증착 시켰다. 첫 번째 스텝 $250^{\circ}C$, 두 번째 스텝은 $260^{\circ}C$의 조건으로 증착하여 보트 내의 a-Se을 남기지 않고 전량을 소모할 수 있었으며, 스텝간의 온도차를 $10^{\circ}C$로 제어하여 균일한 박막을 형성 할 수 있었다. Sputtering증착 시, 저진공 $2.510^{-3}$, 고진공 $310^{-5}$에서 Ar, $O_2$를 사용하여 100 Sec간 플라즈마를 생성시켜 ITO를 증착하였다. 제작된 방사선 각각의 검출기 샘플 양단의 ITO에 500V의 전압을 인가하고, 진단 방사선 범위의 70 kVp, 100 mA, 0.03 sec 조건으로 X-ray를 조사시켜 ITO넓이에 따른 민감도(Sensitivity)와 암전류(Dark current)를 측정하였다. 측정결과 민감도(Sensitivity)는 X-ray샘플의 두께에 따른 $1V/{\mu}m$ 기준 시, 증착된 ITO의 넓이가 11 cm부터 22 cm, $2.7{\times}2.7cm$까지 각각 $7.610nC/cm^2$, $8.169nC/cm^2$, $6.769nC/cm^2$로 22 cm 넓이의 샘플이 가장 높은 민감도를 나타내었으나, 암전류(Dark current)는 $1.68nA/cm^2$, $3.132nA/cm^2$, $5.117nA/cm^2$로 11 cm 넓이의 샘플이 가장 낮은 값을 나타내었다. 이러한 데이터를 SNR (Signal to Noise Ratio)로 합산 하였을 시 104.359 ($1{\times}1$), 60.376($2{\times}2$), 30.621 ($2.7{\times}2.7$)로 11 cm 샘플이 신호 대 별 가장 우수한 효율을 나타냄을 알 수 있었다. 따라서 ITO박막의 면적이 클수록 민감도는 우수하나 그에 따른 암전류의 증가로 효율이 떨어짐을 검증 할 수 있었으며, 이는 ITO면적이 넓어짐에 따른 저항의 증가로 암전류에 영향을 끼침을 할 수 있었다. 본 연구를 통해 a-Se의 ITO 박막 면적에 따른 전기적 특성을 검증할 수 있었다.

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