• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.7 s.337
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• pp.1-4
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• 2005

A four-channel photoreceiver ways have been realized in a 0.8$\mu$m Si/SiGe HBT technology for the applications of parallel optical interconnects. The receiver array includes four-channel transimpedance amplifiers (TIAs) and p-i-n photodiodes, where the TIAs exploit a common-emitter (CE) input configuration. Measured results demonstrate that the four-channel CE TIA array provides 3.9GHz bandwidth, 62dB$\Omega$ transimpedance gain, 7.5pA/sqrt(Hz) average noise current spectral density, and less than -25dB crosstalk between adjacent channels with 40mW power dissipation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.59-60
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• 2008

GaN-based light-emitting diodes (LEDs) with ZnO nanorod arrays on a planar indium tin oxide (ITO) transparent electrode were demonstrated. ZnO nanorods were grown into aqueous solution at low temperature of $90^{\circ}C$. Under 20 mA current injection, the light output efficiency of the LED with ZnO nanorod arrays on ITO was remarkably increased by about 40 % of magnitude compared to the conventional LED with only planar ITO. The enhancement of light output by the ZnO nanorod arrays is due to the formation of side walls and a rough surface resulting in multiple photon scattering at the LED surface.

• Journal of Sensor Science and Technology
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• v.13 no.2
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• pp.85-89
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• 2004

This paper represents the development of high sensitivity photo-sensor for the fluorescence detection in the integrated biological analysis system. The finger-type PIN photodiodes were fabricated as the photo-sensor, and had a high sensitivity ($I_{light}/I_{dark}$ = 8720). The interference filter consisted of $TiO_{2}$ and $SiO_{2}$ was directly deposited on the photodiodes. Deposited filter with 95.5% reflection under 532 nm and 98% transmission over 580 nm exceedingly decreased the magnitude of background signal in the detection. The PDMS micro-fluidic channels are bonded on the photodiode by $O_{2}$ plasma treatment. The detection current was proportional to two primary parameters (light intensity, concentration), and the on-chip detection system could detect fluorescence signals down to 100 nM concentration (LOD = Limit of detection of rhodamine).

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.4
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• pp.38-48
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• 1992

OEIC(Optoelectronic Integrated Circuit)'s can be integrated horizontally or vertically. Horizontal integration approach is, however, more immune to parasitic and more universally applicable. In this paper, a structural modeling, fabrication and characterization of PIN photodiodes which can be used in the horizontal integration are performed. For device modeling, we build a transmission line model from 2-D device simulation, from which lumped model parameters are extracted. The speed limits of the PIN photodiodes can also be calculated under various structural conditions from the model. Thus optimum design of horizontally integrated PIN photodiodes for high speed operation are possible. Such InGaAs/InP PIN photodiodes for long-wavelength communications are fabricated using pit etch, epi growth, planarization, diffusion and metallization processes. Planarization process using both RIE and wet etching and diffusion process using evaporated Zn$_{3}P_{2}$ film are developed. Characterization of the fabricated devices is performed through C-V and I-V measurements. At a reserve bias of 10V, the dark current is less than 5nA and capacitance is about 0.4pF. The calculated bandwidth using the measured series resistance and capacitance is about 4.23GHz.

• Journal of radiological science and technology
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• v.35 no.4
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• pp.315-319
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• 2012

The aim of this study was to develop a signal process circuit for a position sensitive avalanche photodiode detector. The circuit parts consisted of amplification, differential and peak/hold circuit. This research was the baseline to develop highly compact radiation detector. The signal was amplified by an amplification chip and its shape was changed in a differential circuit to minimize the pulse tailing. The peak/hold circuit detect the peak of the signal from the differential circuit and hold the amplitude of the peak for data acquisition. In order to test the intrinsic function of the circuit, the input signal was transmitted from a commercial pulse generator.

• Journal of the Semiconductor & Display Technology
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• v.22 no.3
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• pp.101-105
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• 2023

Organic photo Diodes (OPDi) give multiple advantages in the growing interest of the flexible optoelectronic devices. Organic semiconductors are freeform as they can deposit on any substrate, so it could be flexible. But the inorganic material photodiodes (PDs) are usually fabricated on silicon wafers which are solid. So, normally PDs are inflexible. By those reasons, we decided to make the vacuum deposited small molecule OPDi. We have investigated the OPDi's J-V characteristic by changing the thickness of p-type layer of OPDi. This device consists of indium-tin-oxide (ITO) / 2,3:6,7-dibenzanthracene (pentacene) / buckminsterfullerene (C60) / aluminum (Al). Its J-V characteristics were measured in the probe station(4156C) that can give dark condition while measuring. And for the luminance characteristics, the photocurrent was measured with the bright halogen lamp and a probe station.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.1
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• pp.111-116
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• 2006

In this paper, the image sensor using the a-Si:H TFT is proposed. The optimum amorphous silicon thin film is deposited using plasma enhanced chemical vapor deposition (PECVD). TFT and photodiode both with the thin film are fabricated and form image sensor. The photodiode shows that Idark is $10^{-12}A$, Iphoto is $10^{-9}A$ and Iphoto/Idark is $10^3$, respectively. In the case of a-Si:H TFT, it indicates that Ion/Ioff is $10^6$, the drain current is a few ${\mu}A$ and Vth is $2\~4$ volts. For the analysis on the fabricated image sensor, the reverse bias of -5 voltage in ITO of photodiode and $70{\mu}sec$ pulse in the gate of TFT are applied. The image sensor with good property was conformed through the measured photo/dark current.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.10
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• pp.927-933
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• 2011

This paper presents an optical sampling technique which can be used to overcome the limited bandwidth of a commercial electronic sampling oscilloscope for pulsed signal measurement. Employing an ultrafast laser with 0.1 ps pulse duration, 20 GHz electromagnetic pulses were generated through a fast photodiode. These pulses were transmitted through a microstrip line and sampled with an optically triggered electro-optic system. Two sampled 20 GHz pulses - measured independently over the transmission line with a non-contacting electro-optic method and conventional electronic one through a coaxial cable - were compared.

• Journal of Advanced Navigation Technology
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• v.20 no.5
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• pp.482-489
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• 2016

Detection of gamma ray can be available using optical fiber scintillator under radiation environment. It monitors the transfer energies of these ions by photodiodes and then convertes into currents. The module which converts those currents into voltages and processes signals is named fine current module TIA, and it is essentially important to convert currents into voltages with high linearity. We have studied and developed the TIA, improving converting linearity and minimizing noises and off-set voltages. Also, we have made efforts to develop precise and accurate current module in compliance with concerned requirements. First of all, we established developing theory, developed related circuits, and then made the current module. And, we confirmed its stability and linearity to be more excellent than any other equipment proposed by other references. We tested the developed fine current modules in the real radiation environment under authorized supervising, confirmed them to meet related requirements.

• Journal of the Korean Society for Nondestructive Testing
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• v.22 no.5
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• pp.500-507
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• 2002

By this study, on-line real-time radiometric system was developed using a 64 channels linear array of solid state detectors to measure wall thickness of insulated piping system. This system uses an Ir-192 as a gamma ray source and detector is composed of BGO scintillator and photodiode. Ir-192 gamma ray source and linear detector array mounted on a computer controlled robotic crawler. The Ir-192 gamma ray source is located on one side of the piping components and the detector array on the other side. The individual detectors of the detector array measure the intensity of the gamma rays after passing through the walls and the insulation of the piping component under measurement. The output of the detector array is amplified by amplifier and transmitted to the computer through cable. This system collects and analyses the data from the detector array in real-time as the crawler travels over the piping system. The maximum measurable length of pipe is 120cm/min. in the case of 1mm scanning interval.