• Journal of the Korean Institute of Telematics and Electronics
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• v.16 no.4
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• pp.32-35
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• 1979

When photon was injected to SnO2- amorphous Sb S thin film -Sn structure through the window of SnO2, photo- voltaic effect was observed. With the energy change of photon, photovoltage had either positive or negative value This phenomenon was considered to be caused by formation of n-n heterojunction in SnO2 - Sb S structure and Schottky junction Sb S -Sn structure.

• Journal of the Korean Institute of Telematics and Electronics
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• v.19 no.6
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• pp.52-54
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• 1982

p·Si-전해질 접합을 전해질로 6N H2SO4, 6N H2SO4(Ti3+), 6N H2SO4(Ti4+), 6N H2SO4(Ti4+/Ti3+)을 사용하여 만들었다. 이들 전해질중 6N H2SO4(Ti4-/Ti3+)을 사용할 때 p·Si 광음극이 안정하게 동학하며 높은 광전 감도를 가지고 있었다. p·Si-electrolyte junction are prepared by using p·Si photocatode in four different electrolytes such as 6N H2SO4, 6N H2SO4(Ti3+), 6N H2SO4(Ti4+), 6N H2SO4(Ti4+/Ti3+) respectively. Among those electrolytes 6N H2SO4(Ti4-/Ti3+) shows very good results, in which p·Si photocathode is stable.

• Convergence Security Journal
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• v.6 no.3
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• pp.79-86
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• 2006

This paper studies the sensitivity analysis of an infrared rays (IR) sensor (SHARP-GD2D12) with bluetooth communication. To evaluate the performance of the IR sensor-bluetooth module, the distance and angle data between the sensor and the fixed object are measured with an IR sensor and the measured data are transferred to PC via bluetooth within 100 meters. This experiment shows that the IR sensor-bluetooth system can be used to measure the distance and angle for a fixed object within 100 meters.

• Electrical & Electronic Materials
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• v.5 no.4
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• pp.361-373
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• 1992

이온이나 플라즈마를 사용해서 박막형성이나 MBE진공증착법에 비해서 분자배열이나 고차구조의 제어 및 그의 다양성에 있어서 LB법에 대한 기대가 크다. 특히 습식법인 점에서 생체기능을 짜넣을 수 있는 분자소자의 개발에는 불가능하다. 역으로 생체분자의 자기조직화나 정보전달기능을 분자 Level로 이해하는 점에서도 LB법은 중요하다고 본다. 또 저차원자성체 전도체 여기자등 물리량에 의한 차원성을 고찰하는 점에서도 LB막의 거동이 주목되고 있다. 또 자발분극된 강유전성의 고분자 즉 Poly등의 박막에 광조사를 하면 광생성된 캐리어가 내부전계에 따라서 이동하고 ~$10^{4}$V 정도의 높은 광기전력을 발생시키는 것도 나타났다. 얻어진 전류는 단지 초전효과를 상회하고 광전류라고 할 수 있다. 쇼트키형 소자의 금속-반도체의 절연막층을 MIS형이라고 하며 특성이 향상된다. SnO$_{2}$/NiPc/Polyethylene막/Al형 광전지가 만들어졌다. 광전변환막이 다양한 목적에 사용되리라 사료되며 지금은 초기 연구단계이나 실용화하는데는 많은 시간이 소요되나 간단한 디바이스 등과 같은 것은 제작이 가능할 것이며 광에너지로 힌한 화학, 전기, 역학 에너지로 변환되는 데는 시간 문제인것 같다. 1년간 일본 동경공업대학 생명이공학부에서 연구한 내용을 정리하여 보았으며 이에 협조하여 주신 문교부 학술진흥재단에 감사드리며 또 등평연구실에 감사드린다.

• Journal of the Korean Chemical Society
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• v.39 no.3
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• pp.163-175
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• 1995

Metal free phthalocyanine($H_2Pc$) partially doped with iodine, $H_2Pc(I)x$, has been made to improve photosensitizing efficiency of ZnO/$H_2Pc$. The content of iodine dopant level(x) for $H_2Pc(I)x$ upon $H_2Pc$ polymorphs was characterized as ${\chi}-H_2Pc(I)_{0.92}$ and ${\beta}-H_2Pc(I)_{0.96}$ by elemental analysis. Characterization of iodine-oxidized $H_2Pc$ were investigated by TGA (thermogravimetric analysis), UV-Vis, FT-IR, Raman and ESR (electron spin resonance) spectrum, and the adsorption properties of $H_2Pc(I)x$ on ZnO were characterized by means of Raman and ESR studies. TGA for $H_2Pc(I)x$ showed a complete loss of iodine at approximately 265$^{\circ}C$ and the Raman spectrum of $H_2Pc(I)x$ and ZnO/$H_2Pc(I)x$ at 514.5 nm showed characteristic $I_3^-$ patterns in the frequency region 90∼550 $cm^{-1}$. ZnO/$H_2Pc(I)x$ exhibited a very intense and narrow ESR signal at $g=2.0025{\pm}0.0005$ compared to $H_2Pc$/ZnO. Iodine doped ZnO/$H_2Pc(I)x$ showed a better photosensitivity compared to iodine undoped ZnO/$H_2Pc$. That is, the surface photovoltage of ${\chi}-H_2Pc(I)_{0.92}$/ZnO was approximately 31 times greater than that of ZnO/${\chi}-H_2Pc$ and ZnO/${\beta}-H_2Pc(I)_{0.96}$ was 5 times more efficient than ZnO/${\beta}-H_2Pc$ at 670 nm. And the dependence of photosensitizing effect upon $H_2Pc$ polymorphs was exhibited that the surface photovoltage of ZnO/${\chi}-H_2Pc(I)_{0.92}$ was approximately 5 times greater than ZnO/${\beta}-H_2Pc(I)_{0.96}$ at 670 nm. Therefore Iodine doping of H_2Pc$ resulted in increase in photoconductivity of $H_2Pc$ and photovoltaic effect of ZnO/$H_2Pc$ in the visible region.

• Proceedings of the KIEE Conference
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• 1999.07g
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• pp.3123-3125
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• 1999

광기록 저장매체의 기록밀도가 더욱 올라가면서 현재 콤팩트디스크나 DVD(Digital Versatile Disc)에 사용되고 있는 d=2인 코드보다는 검출성능이 좋은 d=1인 코드에 대한 관심이 점점 높아지고 있다. 광기록 저장매체에 사용할 수 있는 코드가 갖추어야할 중요한 제한조건으로는 코드열의 전력밀도가 저주파에서 충분히 억압될 수 있어야 한다는 것이다. 광자기디스크나 하드디스크에서 사용된 적이 있는 (1.7)코드는 코드자체로서 DC억압능력을 갖고있지 않다. DC를 억압시키기 위해 보통 부가비트를 일정간격으로 삽입하거나 싱크를 이용하게 되는데 이와 같은 방법으로는 충분한 DC억압이 어렵거나 기록밀도를 올리는데 불리한 원인이 된다. 본 논문에서는 코드열 자체로서 DC억압능력을 갖고 있는 코드워드의 생성방식과 변조 알고리즘을 RLL(1,8)인 경우를 예로 제시하였다. 또한 본 논문에서 제시한 코드의 성능에 대한 검증으로 기존의 RLL(1,8)코드(1)와 본 논문에서 제시한 코드에 4%이하의 부가비트를 삽입하여 DC억압을 수행한 뒤 동일한 기록밀도에서 DC억압성능을 비교하였을 때 저주파 대역에서 $1^{\sim}5dB$이상의 개선효과가 있었음을 확인하였다.

• Journal of the Korean Chemical Society
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• v.37 no.7
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• pp.642-647
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• 1993

Monolayers of pure surfactant squaraine, DSSQ(4-distearyl amino phenyl-4'-dimethylaminophenylsquaraine), were deposited on $SnO_2 $ electrodes by the Langmuir-Blodgett film technique. The DSSQ film exhibits ${\lambda}_{max}$ at ∼530 nm. The absorption is significantly red-shifted from the solution of DSSQ (633 nm in chloroform), suggesting that the squaraine chromophores form aggregates in the LB film. The photogeneration of the squaraine aggregates is studied by measuring the photocurrents in photoelectrochemical cells consisting of the squaraine of the aggregates is found to parallel its absorption spectrum and quantum efficiency as high as 0.3% has been observed. While the photocurrent was attenuated exponentially when stearic acid layers (up to 8 layers) are inserted between the squaraine layer and the electrode, it is nearly extinguished when the squaraine layer is over-coated with 2 layers of stearic acid. A model for the observation is proposed and the roles of the electrolytes and oxygen on the photogeneration process will be discussed.

• Journal of Sensor Science and Technology
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• v.6 no.5
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• pp.407-413
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• 1997

The crystallized CuPc(copper phthalocyanine) film on a p-type <100> Si substrate is prepared at the substrate temperature of $300^{\circ}C$ by thermal evaporation. X -ray diffraction analysis showed the CuPc film to have a-axis oriented structure. For the measurement of photovoltaic characteristics of the CuPc/Si film and the Si substrate, a transverse current-voltage (I-V) curve is observed. In the dark, the Au/Si junction is shown to be ohmic contact. However, under illumination, a photovoltaic effect is not observed. The I-V curve in the dark indicates that the CuPc film on Si may form an ohmic contact. Since the CuPc film is a p-type semiconductor, the CuPc/p-Si junction has no barrier at the interface. Under illumination, the CuPc/Si junction shows a large photocurrent comparing with that of the wafer. The result indicates that the CuPc layer plays an important role in the photocarrier generation under red illumination (600 nm). The CuPc/Si film shows the photo voltaic characteristics with a short-circuit photocurrent ($J_{sc}$) of $4.29\;mA/cm^{2}$ and an open-circuit voltage ($V_{oc}$) of 12 mA.

• Proceedings of the KIEE Conference
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• 2003.10a
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• pp.104-106
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• 2003

본 논문은 이상전압으로부터 배전선로 및 전력기기를 보호하기 위해 사용되는 폴리머피뢰기에 대해 침수 시험을 실시하여 침수 전후 폴리머피뢰기의 특성변화를 평가하였다. 침수 시험은 수온 95[$^{\circ}C$]에서 20일 동안 실시하였다. 침수 시험 전후 폴리머피뢰기의 특성분석은 푸리에변환 적외선분광기(FTR : fourier transform infrared spectrophotometer), 유전열분석(DETA : dielectric thermal analyzer), 발수성 측정, 절연저항 측정, 누설전류 측정, 동작개시전압 측정 둥으로 연구 하였다. 이를 통해 침수시험의 열화 효과에 대해 검토하였다.

• 전기의세계
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• v.20 no.4
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• pp.23-30
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• 1971

The photovoltaic behaviors ahve been observed with a sandwich-type cell, consisting of a junction between .betha.-carotene and stannic oxide conducting layer to provide a junction electrode. In the stannic oxide and .betha.-carotene junction it was found that its electromotive forse decreased to a value smaller than the original one. This is due to a space charge formation. Photovoltage reached approximately 40mV with an irradiation energy of 250Kcal/M$^{2}$hr. It appeared that a magnitude of the photovoltaic response was proportional to the logarithm of irradiance. The time constant of the photovoltaic effect was shown to be approximately 0.7 sec. The wavelength dependence of the photovoltaic behavior was very anomalous. It is assumed that such an anomalous photoresponse depends on a internal capacitance due to some bubble during process to make a cell.