• Journal of the Korea Academia-Industrial cooperation Society
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• v.15 no.4
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• pp.1838-1843
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• 2014

Nanoimprint lithography (NIL) fabrication process is regarded as the main alternative to existing expensive photo-lithography in areas such as micro- and nano-electronics including optical components and sensors, as well as the solar cell and display device industries. Functional patterns, including anti-reflective moth-eye pattern, photonic crystal pattern, fabricated by NIL can improve the overall efficiency of such devices. To successfully imprint a nano-sized pattern, the process conditions such as temperature, pressure, and time should be appropriately selected. In this paper, a cavity-filling process of the moth-eye pattern during the thermal-NIL within the temperature range, where the polymer resist shows the viscoelastic behaviors with consideration of stress relaxation effect of the polymer, were investigated with three-dimensional finite element analysis. The effects of initial thickness of polymer resist and imprinting pressure on cavity-filling process has been discussed. From the analysis results it was found that the cavity filling can be completed within 100 s, under the pressure of more than 4 MPa.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.10
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• pp.927-933
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• 2011

This paper presents an optical sampling technique which can be used to overcome the limited bandwidth of a commercial electronic sampling oscilloscope for pulsed signal measurement. Employing an ultrafast laser with 0.1 ps pulse duration, 20 GHz electromagnetic pulses were generated through a fast photodiode. These pulses were transmitted through a microstrip line and sampled with an optically triggered electro-optic system. Two sampled 20 GHz pulses - measured independently over the transmission line with a non-contacting electro-optic method and conventional electronic one through a coaxial cable - were compared.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.336.1-336.1
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• 2014

대표적인 TCO 물질인 ITO는 디스플레이 패널이나 태양 전지 등과 같은 소자에 널리 사용되고 있다. 최근에는 대량생산 및 대면적화, 그리고 유연 디스플레이 응용을 위해 롤투롤 스퍼터링(roll to roll sputtering) 공정을 이용하여 플라스틱 기판에 ITO박막을 증착하여 ITO 필름을 제작하고 있다. 롤투롤 방식으로 ITO 필름의 제작 시 공정 변수에 따라 ITO 박막의 전기적 광학적 물성 변화가 매우 크기 때문에, 공정 변수에 따른 ITO 박막의 전기적, 광학적 특성 변화에 대한 연구의 필요성이 매우 높아지고 있다. 따라서 본 연구에서는 롤투롤 스퍼터링 방법으로 PET 기판 위에 다양한 조건으로 ITO 박막을 증착하여 공정변수에 따른 ITO 박막의 물성을 조사 하였다. 이를 위해 ITO (In/Sn=95/5 wt.%) 타겟을 사용하여 DC 파워와 산소 분압비, 열처리 온도 등을 변화시켜 낮은 면저항과 높은 광투과도를 가지는 최적의 ITO 증착 조건을 찾은 후 ITO 박막을 PET 기판 위에 두께 별로 증착 하였다. ITO 박막의 두께와 열처리 온도에 따른 전기적 특성은 면저항 측정기와 홀 측정 장치를 이용하여 분석하였고, 분광광도계와 탁도 측정기를 이용하여 광학적 특성을 관찰하였다. 또한, GIXD를 이용하여 이들 박막의 구조와 결정성에 대한 조사를 수행하였다. 이 결과들로부터 산소 분압비에 따른 ITO/PET 박막의 저항 특성 변화와 ITO 박막의 두께와 열처리 온도에 따른 구조적, 전기적, 광학적 특성을 조사하여, 롤투롤 스퍼터링법에서 공정 조건에 따른 ITO/PET 필름의 물성변화를 보고하고자 한다.

• Journal of the Korean Magnetics Society
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• v.15 no.2
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• pp.148-152
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• 2005

A novel interferometric isolator has been proposed and designed to fabrticate waveguide magnetooptic isolator operating at a wavelength of $1.55{\cal}um$. The device consists of MMI (multimode interference) couplers and has a magnetooptic guiding layer with different layer structure in arms of the inteferometer. The layer structures in the arms of inteferometer are $HfO_2/CeY_2Fe_5O_{12}/NOG$ and $SiO_2/CeY_2Fe_5O_{12}/NOG$, respectively. This configuration give rise to different nonreciprocal phase shift. In consequence, the isolator operates under a unidirectional magnetic field. The optimized structure of the isolator was determined by a 3D beam propagation method.

• The Journal of the Korea institute of electronic communication sciences
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• v.19 no.1
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• pp.39-46
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• 2024

In this study, GTZO(Ga-Ti-Zn-O) thin films were deposited at various working pressures (1~7mTorr) by RF magnetron sputtering to examine the structural, electrical, and optical properties. All GTZO thin films exhibited c-axis preferential growth regardless of working pressure, the GTZO thin film deposited at 1mTorr showed the most excellent crystallinity having 0.38˚ of FWHM. The average transmittance in the visible light region (400~800nm) showed 80% or more regardless of the working pressure. We could observed the Burstein-Moss effect that carrier concentration decrease with the increase of working pressure and thus the energy band gap is narrowed. Figure of merits of GTZO thin film deposited at 1mTorr showed the highest value of 9.08 × 103 Ω-1·cm-1, in this case resistivity and average transmittance in the visible light region were 5.12 × 10-4 Ω·cm and 80.64%, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.2
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• pp.45-50
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• 2015

Compositionally graded AlGaN epilayer was grown by HVPE (hydride vapor phase epitaxy) on (0001) c-plane sapphire substrate. During the growth of graded AlGaN epilayer, the temperatures of source and the growth zone were set at $950^{\circ}C$ and $1145^{\circ}C$, respectively. The growth rate of graded AlGaN epilayer was about 100 nm/hour. The changing of Al contentes was investigated by field emission scanning electron microscope (FE-SEM) and energy dispersive spectroscopy (EDS). From the result of atomic force microscope (AFM), the average of roughness in 2 inch substrate of graded AlGaN epilayer was a few nanometers scale. X-ray diffraction (XRD) with the result that the AlGaN (002) peak ($Al_{0.74}Ga_{0.26}N$) and AlN (002) peak were appeared. It seems that the graded AlGaN epilayer was successfully grown by the HVPE method. From these results, we expect to use of the graded AlGaN epilayer grown by HVPE for the application of electron and optical devices.

• Proceedings of the Optical Society of Korea Conference
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• 2005.07a
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• pp.28-29
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• 2005

본 논문에서는 MEH-PPV와 DFPP의 폴리머 물질을 이용하여 photovoltaic device가 제작되었고, 그림 1에 두 물질의 분자 구조가 보여진다. Photovoltaic cell의 전기-광학적 특성은 활성층의 폴리머 물질에 의해 결정된다. 이러한 특성을 알아보기 위해서 홉수 스펙트럼이 측정되었다. DFPP는 chloroform, chlorobenzen, THF, acetone에 잘 녹았으며, 본 논문에서는 chloroform이 용매로 사용되었다. 제작 공정은 다음과 같다. 인듐 주석 산화물 (ITO)이 증착된 유리기판은 photolithography 공정을 거친 후, 왕수(HNO$_{3}$ + HCL)로 식각됨으로서 전극의 패턴이 제작되었다. 그리고 ITO 전극 패턴 된 유리기판 위에 PEDOT (CH8000, Baytron)이 코팅된 후 Ar이 주입되는 Convection Oven을 이용하여 120$^{\circ}$C에서 2시간 동안 열처리되어 수분이 제거되었다. 활성층에는 MEH-PPV와 DFPP가 9:1과 2.33:1로 혼합된 폴리머가 사용되었고, 이것은 0.3 %w.t.가 되도록 chloroform에 넣어 5시간 동안 스핀바를 돌려서 용해되었다. 이 용액은 ITO 전극 패턴이 형성된 글라스 위에 3000 rpm으로 45 초간 스핀코팅 되었다. 이 때 얻어진 유기물 박막층은 80$^{\circ}$C의 Ar이 주입되는 convection oven에서 3시간 동안 경화되었다. 경화된 단층 유기물 박막층 위에 Li-Al이 1000 ${\AA}$의 두께로 증착되어 전극이 형성되었고, 이후 질소가 채워진 globe box에서 소자는 encapsulation되어 산소와 수분에 대한 영향으로부터 차단되었다. 상기의 공정으로 제작된 소자의 박막구조는 그림 2에서 보여진다. 그림 3은 MEH-PPV와 DFPP를 혼합했을 때의 흡수 스펙트럼이다. 최대 흡수 파장은 511 nm였다. 그리고 photovoltaic cell의 V-I 특성 결과가 그림 4와 같이 측정되었다. 측정에서는 300${\sim}$700 nm의 파장대를 갖는 태양광 모사계가 사용되었고, 셀의 면적은 10 mm$^{2}$였다. 그림 5의 I-V 특성으로부터 MEH-PPV와 DFPP가 9:1 로 혼합했을 때보다 2.33:1 로 혼합했을 때, photovoltaic device의 효율이 향상됨을 확인할 수 있다. 빛이 75 mW/cm$^{2}$ 의 세기로 조사될 때 9:1과 2.33:1로 혼합된 소자의 open circuit voltage (V$_{oc}$)는 비슷하지만, short circuit current Density (J$_{sc}$)는 각각 -1.39 ${\mu}$A/cm$^{2}$ 와 -3.72${\mu}$A/cm$^{2}$ 로 약 2.7배 정도 증가되었음을 볼 수 있다. 이러한 결과를 통해 electron acceptor인 DFPP의 비율이 높아질수록 photovoltaic cell의 conversion efficiency가 더 크게 됨을 확인할 수 있다. 그러므로 효율이 최대가 되는 두 폴리머의 혼합 비율이 최적화되는 조건을 찾는 것은 매우 중요한 연구가 될 것이다.

• Journal of the Korean Chemical Society
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• v.44 no.5
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• pp.453-459
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• 2000

FED has deserved an intensive attentioD as a new flat panel display. The present investigationaims at undemtanding the photoluminescence and cathodoluminescent properties of hGaO$_3$: $Eu^{3+}$ phosphor bytaking into account the possibility that this phosphor could be applied for FED. In onler to investigate on.sucha detailed behavior; 8everM experimental skil18 Je conducted to the LaGaO$_3$:$Eu^{3+}$ phosphoL The excimtion srectrum artd emission spectmn were rnezsured in the UV range and then decay curve of $^5D_0$+$^7F_j$transitions\vas examined. The decay behavior of $^5D_0$ emission was anMyzed by a newly Iuoposed cross-relaxation mech-ani8In in asswiation with inteFwnter di1ffision (or migration). The cross-mlaxation from $^5D_0$ to CTB (Cha'geTransfer Band) wuld be a quite retsonable by considering the excitation spectrum. It could be also found thatthe quenching type was changed from ditfrsion controlled process to the direct quenching process -s inJeasing $Eu^{3+}$ oncntration.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.2
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• pp.61-65
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• 2009

In this paper, we report on the growth and optical characteristics of white-LED without fluorescent material. The growth of DH(double heterostructure) with AlGaN active layer was performed on a n-GaN/(0001) $Al_{2}O_{3}$ by the mixed-source HVPE and multi-sliding boat. The CRI(color rendering index) of packaging device charged in the range 72-93 with CIE chromaticity coordinates(x=$0.26{\sim}0.34$, y=$0.31{\sim}0.40$). And CCT(correlated color temperature) values was measured $5126{\sim}10406K$ with increasing injection current. The CIE point of conventional phosphor white LED shifts blue region, but cm point of non-phosphor white LED shifts opposite direction. These results show the mixed-source HVPE can be possible to newly fabricate method of phosphor free white LED with high CRI value.

• Journal of Korean Ophthalmic Optics Society
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• v.13 no.1
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• pp.71-76
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• 2008

Purpose: A simple and efficient method to prepare nanocrystalline ZnO thin film with pure strong UV emission on soda-lime-silica glass substrates by low-temperature annealing was improved. Methods: Crystal structural, surface morphological, and optical characteristics of nanocrystalline ZnO thin films deposited on soda-lime-silica glass substrates by prefiring final annealing process at 300$^{\circ}C$ were investigated by using X-ray diffraction analysis, field emission-scanning electron microscope, scanning probe microscope, ultraviolet-visible-near infrared spectrophotometer, and photoluminescence. Results: Highly c-axis-oriented ZnO films were obtained by prefiring at 300$^{\circ}C$. A high transmittance in the visible spectra range and clear absorption edge in the ultra violet range of the film was observed. The PL spectrum of ZnO thin film with a deep near band edge emission was observed while the defect-related broad green emission was nearly quenched. Conclusions: Our work will be possibly adopted to cheaply and easily fabricate ZnO-based optoelectronic devices at low temperature, below 300$^{\circ}C$, in the future.