• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.8
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• pp.438-444
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• 2000

We report the effects of etch process parameters on the ohmic contact formation in the plasma etching of GaN. Planar inductively coupled plasma system with $CH_4/H_2/Ar$gas chemistry has been used as etch reactor. The contact resistance and the specific contact resistance have been investigated using transfer length method as a function of RF bias power and %Ar gas concentration in total flow rate. AES(Auger electron spectroscopy) analysis revealed that the etched GaN has nonstoichiometric Ga rich surface and was contaminated by carbon and oxygen. Especially large amount of carbon was detected at the sample etched for high bias power (or voltage) condition, where severe degradation of contact resistance was occurred. We achieved the low ohmic contact of $2.4{\times}10^{-3} {\Omega}cm^2$ specific contact resistance at the input power 400 W, RF bias power 150 W, and working pressure 10mTorr with 10 sccm $CH_4$, 15 sccm H2, 5 sccm Ar gas composition.

• Journal of Institute of Convergence Technology
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• v.5 no.1
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• pp.13-17
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• 2015

In wafer level molding progress, the thermal releasing failure phenomenon is shown up as the important problem. This phenomenon can cause the problem including the warpage, crack of the molded wafer. The thermal releasing failure is due to the insufficiency of adhesion strength degradation of the molding tape. To solve this problem, we studied experimental method increasing the release property of the molding tape through the plasma surface treatment on the wafer substrate. In this research, the vacuum plasma treatment system is used for release property improvement of the molding tape and controls the operating condition of the hydrophilic($O_2$, 100kW, 10min) and hydrophobic($C_2F_6$, 200kW, 10min). In order to perform the peeling test for measuring the releasing force precisely, we remodel the micro scale material property evaluation system developed by Korea institute of industrial technology. In case of hydrophilic surface treatment on the wafer substrate, we can figure out the releasing property of molding tape increase. In order to grasp the effect that it reaches to the release property increase when repeating the hydrophilic treatment, we make an experiment with twice treatment and get the result to increase about 12%. We find out the hydrophilic surface treatment method using plasma can improve releasing property of molding tape in the wafer level molding process.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.200-200
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• 2013

기존 메모리 반도체에 비교해 빠른 재생속도와 높은 집적도, 비휘발성 등의 특성을 가지는 MRAM (Magnetic Random Access Memory)은 DRAM, flash memory 등을 대체할 수 있는 차세대 기억 소자로서 CoFeB/MgO/CoFeB로 구성된 한 개의 MTJ (Magnetic Tunnel Junction)를 단위 메모리로 사용한다. 이 MTJ 물질들은 고밀도 플라즈마를 이용한 건식 식각공정시 Cl2, BCl3 등과 같은 chlorine 을 포함한 가스를 이용하여 왔으나 식각 후 sidewall에서 발생하는 부식과 식각 선택비 확보의 어려움 등으로 마스크 물질에 제약을 받고 소자 특성이 감소하게 되는 등의 문제가 있다. 따라서 이러한 식각 문제점을 해결하기 위한 대안으로 noncorrosive 가스인 CO/NH3, CH3OH, CH4 등을 이용한 MTJ 식각 연구가 진행되어 오고 있으며 이중 CO/NH3 혼합가스는 부식성이 없고 hard mask와의 높은 선택비를 가지는 기체로 CO gas에 NH3 gas를 첨가하게 되면 etch rate이 증가하는 특성을 보인다. 또한 rf pulse-biased power를 이용하여 이온의 입사를 시간에 따라 제어함으로써 pulse off time 때 etch gas와 MTJ 물질간의 chemical reaction을 향상시킬 수 있다. 따라서 본 연구에서는 CO/NH3 혼합가스를 이용하여 다양한 rf pulse-biased power 조건에서 MTJ 물질인 CoFeB, MgO와 hard mask 물질인 W을 식각 한 뒤 식각특성을 분석하였으며 MTJ surface의 chemical binding state, surface roughness 측정을 진행하였다. 식각 샘플의 측정은 Alpha step profiler, XPS (X-ray Photoelectron Spectroscopy), AFM (Atomic Force Microscopy)를 통해 진행되었다. Time-averaged pulse bias에서는 duty ratio가 감소할수록 etch rate의 큰 감소 없이 CoFeB/W, MgO/W 물질의 etch selectivity가 향상됨을 확인할 수 있었으며 pulse off time 구간에서의 chemical reaction 향상으로 인해 식각부산물의 재증착이 감소하고 CoFeB의 surface roughness가 감소하는 것을 확인하였다.

• Analytical Science and Technology
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• v.5 no.1
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• pp.127-134
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• 1992

Effects of boron addition on microstructure and phases of plasma are melted tungsten have been investigated by optical microscopy, scanning electron microscopy, Auger electron spectroscopy, X-ray diffractometer, measurements of grain size and hardness. The change in the microstructure upon boron addition was studied by optical microscopy. It was observed that the grain refinement was induced upon content within the limit of solubility. When the boron content was above the solubility limit, two phases of primary tungsten and eutectic structure were observed and confirmed by AES and XRD analysis. It was also shown that recrystallization temperature was increased and recrystallized grain size was reduced as boron content increased.

• Korean Journal of Materials Research
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• v.26 no.10
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• pp.513-520
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• 2016

The effect of NaOH concentration on the properties of electrolytic plasma processing (EPP) coating formed on AZ61A Mg alloy is studied. Various types of EPP were employed on magnesium alloy AZ61A in a silicate bath with different concentrations of NaOH additive. Analysis of the composition and structure of the coating layers was carried out using an X-ray diffractometer (XRD) and a scanning electron microscope (SEM). The results showed that the oxide coating layer mainly consisted of MgO and $Mg_2SiO_4$; its porosity and thickness were highly dependent on the NaOH concentration. The Vickers hardness was over 900 HV for all the coatings. The oxide layer with 3 g/l of NaOH concentration exhibited the highest hardness value (1220 HV) and the lowest wear rate. Potentiodynamic testing of the 3 g/l NaOH concentration showed that this concentration had the highest corrosion resistance value of $2.04{\times}10^5{\Omega}cm^2$; however, the corrosion current density value of $5.80{\times}10^{-7}A/cm^2$ was the lowest such value.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.1
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• pp.90-99
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• 1999

In this work, we consider the effect of the presheath on the ion angular distribution. The recent shows the ion-neutral collision in the presheath and the calculated energy flux with the ion angular distribution at the presheath edge in plasma reactor. We also propose a new approximation analytical model for the ion angular distribution and the energy flux distribution with ion temperature. The ion passing the presheath region, Shows a ion scattering effect without ion-neutral collisions. This because the kinetic energy by the ambipolar diffusion field is changed by the gas collision,. Using the proposed approximation analytical model, we show the simulated results of a deposit profile on variable trench shape.

• Journal of the Korean Ceramic Society
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• v.42 no.3 s.274
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• pp.178-181
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• 2005

Silicon oxynitride (SiON) layers deposited upon a $SiO_2/Si$ buffer layer placed upon silicon wafers have been obtained by using PECVD from $SiH_4,\;N_2O$, and $N_2$. It can be seen that the refractive index, measured by using a prism coupler, for the SiON films can be varied between 1.4480 and 1.4958 at a wavelength of 1552 nm by changing the process parameters. Optical planar waveguides with a thickness of $6{\mu}m$ and a refractive index contrast ($\Delta$n) of $0.36\% have been deposited. Also, etching experiments were performed using ICP dry etching equipment on thick SiON films grown onto Si substrates covered by a thick $SiO_2$ buffer layer. A polarization maintaining single-mode fiber was used for the input and a microscope objective for the output at $1.55{\mu}m$. As a result, a low index contrast SiON based waveguide is fabricated with easily adjustable refractive index of core layer. It illustrates that the output intensity mode is a waveguiding single-mode.

• Journal of Environmental Science International
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• v.24 no.11
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• pp.1393-1404
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• 2015

Ten empirical disinfection models for the plasma process were used to find an optimum model. The variation of model parameters in each model according to the operating conditions (first voltage, second voltage, air flow rate, pH, incubation water concentration) were investigated in order to explain the disinfection model. In this experiment, the DBD (dielectric barrier discharge) plasma reactor was used to inactivate Phytophthora capsici which cause wilt in tomato plantation. Optimum disinfection models were chosen among ten models by the application of statistical SSE (sum of squared error), RMSE (root mean sum of squared error), $r^2$ values on the experimental data using the GInaFiT software in Microsoft Excel. The optimum models were shown as Log-linear+Tail model, Double Weibull model and Biphasic model. Three models were applied to the experimental data according to the variation of the operating conditions. In Log-linear+Tail model, $Log_{10}(N_o)$, $Log_{10}(N_{res})$ and $k_{max}$ values were examined. In Double Weibull model, $Log_{10}(N_o)$, $Log_{10}(N_{res})$, ${\alpha}$, ${\delta}_1$, ${\delta}_2$, p values were calculated and examined. In Biphasic model, $Log_{10}(N_o)$, f, $k_{max1}$ and $k_{max2}$ values were used. The appropriate model parameters for the calculation of optimum operating conditions were $k_{max}$, ${\alpha}$, $k_{max1}$ at each model, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.80-80
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• 1999

플라즈마 디스플레이 패널(PDP)의 공정을 간단히 하기 위하여 포토레지스트, ITO, 격벽재료를 Ar+ laser(λ-514 nm, CW)와 Nd:YAG laser(λ=532, 266nm, pulse)로 직접 패터닝 하였다. 레이저에 의한 포토레지스트의 패턴결과, 아르곤 이온 레이저의 포토레지스트 가공의 반응 메카니즘은 레이저 빔의 열에 의한 시료 표면의 국부적인 온도상승에 의한 용융작용이며, 그 결과 식각 후 형성된 패턴의 단면 모양도 레이저빔의 profile과 같은 가우시안 형태를 나타낸다. Nd:YAG 레이저의 4고조파(532nm)를 이용한 경우 200$\mu\textrm{m}$/sce의 주사속도에서 포토레지스트를 패턴하기 위한 임계에너지(threshold energy fluence) 값은 25J/cm2이며, 약 40J/cm2의 에너지 밀도에서 하부기판의 손상이 발생하기 시작하였다. 글미 1은 Nd:YAG 레이저 4고조파를 이용하여 포토레지스트를 식각한 경우 SEM 표면사진(위)과 단차특정기에 의한 단면형상(아래)이다. ITO 막의 레이저에 의한 직접 패턴 결과, ITO 막은 레이저 펄스에 의한 급속 가열 및 증발에 의한 메커니즘으로 식각이 이루어지며, 레이저 파장에 따른 광흡수 정도의 차이에 의해 2고조파 (532nm)에서 ITO 막의 가공 품질이 4고조파(266nm)에 비해 우수하며 패턴의 폭도 출력에 따라 제어가 용이하였다. 그림 2는 Nd:YAG 레이저 2고조파를 이용하여 ITO를 식각한 경우 SEM표면 사진(위)과 단차측정기에 의한 단면형상(아래)이다. 격벽 재료의 레이저에 의한 직접 패턴 결과, Ar+ 레이저(514nm)는 출력 밀도 32NW/cm2에서 격벽을 유리 기판의 경계면까지 식각하였다. Nd:YAG 레이저(532nm)는 laser fluence가 6.5mJ/cm2에서 격벽을 식각하기 시작하였으며, 19.5J/cm2에서 유리기판의 rudraus(격벽 두께 130$\mu\textrm{m}$)까지 식각하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.5
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• pp.401-409
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• 2013

Numerical analysis on RF (Radio-Frequency) thermal plasma treatment of micro-sized Ni metal was carried out to understand the synthesis mechanism of nano-sized Ni powder by RF thermal plasma. For this purpose, the behaviors of Ni metal particles injected into RF plasma torch were investigated according to their diameters ($1{\sim}100{\mu}m$), RF input power (6 ~ 12 kW) and the flow rates of carrier gases (2 and 5 slpm). From the numerical results, it is predicted firstly that the velocities of carrier gases need to be minimized because the strong injection of carrier gas can cool down the central column of RF thermal plasma significantly, which is used as a main path for RF thermal plasma treatment of micro-sized Ni metal. In addition, the residence time of the injected particles in the high temperature region of RF thermal plasma is found to be also reduced in proportion to the flow rate of the carrier gas In spite of these effects of carrier gas velocities, however, calculation results show that a Ni metal particle even with the diameter of $100{\mu}m$ can be completely evaporated at relatively low power level of 10 kW during its flight of RF thermal plasma torch (< 10 ms) due to the relatively low melting point and high thermal conductivity. Based on these observations, nano-sized Ni metal powders are expected to be produced efficiently by a simple treatment of micro-sized Ni metal using RF thermal plasmas.