• Title/Summary/Keyword: 고체의 성장

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An Asymptotic Analysis on the Inviscid Plane Stagnation-flow Solidification Problem (비점성 평면 정체 유동 응고 문제에 대한 점근적 해석)

  • Yoo, Joo-Sik;Eom, Yong-Kyoon
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.24 no.6
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    • pp.792-801
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    • 2000
  • The problem of phase change from liquid to solid in the inviscid plane-stagnation flow is theoretically investigated. The solution at the initial stage of freezing is obtained by expanding it in powers of time, and the final equilibrium state is determined from the steady-state governing equations. The transient solution is dependent on the three dimensionless parameters, but the equilibrium state is determined by one parameter of (temperature ratio/conductivity ratio). The effect of the fluid flow on the growth rate of the solid in the pure conduction problem can be clearly seen from the solution of the initial stage and the final equilibrium state. The characteristics of the transient heat transfer at the surface of the solid and the liquid side of the solid-liquid interface for all the dimensionless parameters are elucidated.

Freezing of Water in Von-Kármán Swirling Flow (Von-Kármán 회전 유동 하에서의 물의 결빙)

  • Yoo, J.S.
    • Korean Journal of Air-Conditioning and Refrigeration Engineering
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    • v.8 no.3
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    • pp.413-422
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    • 1996
  • Freezing of water in von-$K{\acute{a}}rm{\acute{a}}n$ swirling flow is considered. The transient behavior of the temperature distribution in both solid and liquid phases and freezing rate are determined. The fluid flow induced by the rotation of solid strongly inhibits the freezing process. The thickness of frozen layer is inversely proportional to the square root of the angular velocity of solid. As the angular velocity or initial liquid temperature becomes larger, the freezing process is more strongly inhibited by the fluid flow. When phase change is present, the transient heat transfer rate is greater than the case with no phase change.

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A theoretical analysis on the viscous plane stagnation-flow solidification problem (평면 점성 정체 유동 응고 문제에 대한 이론적 해석)

  • 유주식
    • Korean Journal of Air-Conditioning and Refrigeration Engineering
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    • v.10 no.3
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    • pp.260-270
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    • 1998
  • The viscous plane stagnation-flow solidification problem is theoretically investigated. An analytic solution at the beginning of solidification is obtained by expanding the temperature and thickness of solidified layer in powers of time. An exact expression for the steady-state thickness of solidified layer is also obtained. The .fluid flow toward the cold substrate inhibits the solidification process. As Stefan number becomes larger, or Prandtl number becomes smaller, the solidification is more strongly inhibited by the fluid flow. The transient heat flux at the liquid side of solid-liquid interface is increased, as Stefan number or Prandtl number is increased.

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A theoretical analysis on the inviscid stagnation-flow solidification problem (비점성 정체 유동 응고 문제에 대한 이론적 해석)

  • 유주식
    • Korean Journal of Air-Conditioning and Refrigeration Engineering
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    • v.12 no.1
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    • pp.1-11
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    • 2000
  • This study investigates the problem of phase change from liquid to solid in the inviscid stagnation flow. The solution of dimensionless governing equations is determined by the three dimensionless parameters of (temperature ratio/conductivity ratio), Stefan number, and diffusi-vity ratio. The solution at the initial stage of freezing is obtained by expanding it in powers of time, and the final equilibrium state is determined from the steady-state governing equations. The equilibrium state is dependent on (temperature ratio/conductivity ratio), but is independent of Stefan number and diffusivity ratio. The effect of fluid flow on the pure conduction problem can be clearly seen from the solution of the initial stage and the final equilibrium state, and the characteristics of the solidification process for all the dimensionless parameters are elucidated.

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Development and performance evaluation of the porous tube dilutor for real-time measurements of fine particles from high humidity environments (고수분 환경에서 미세먼지 실시간 측정을 위한 다공 튜브형 희석장치의 개발 및 성능 평가)

  • Woo, Chang Gyu;Hong, Ki-Jung;Kim, Hak-Joon;Kim, Yong-Jin;Han, Bangwoo;An, Jeongeun;Kang, Su Ji;Chun, Sung-Nam
    • Particle and aerosol research
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    • v.13 no.3
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    • pp.105-110
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    • 2017
  • Real-time measurements of fine particles from stack emission gases are necessary due to the needs of continuous environmental monitoring of PM10 and PM2.5. The porous tube dilutor using hot and cold dilutions was developed to measure fine particles without condensable particles from highly humid emission gases and compared to the commercialized ejector-type dilutor. Particle size distributions were measured at the emission gases from a diesel engine and a coal-fired boiler. The porous tube dilutor could successfully measure the accumulation mode particles including relatively large particles more than $3{\mu}m$ without nuclei particles, while the ejector dilutor detected some condensable particles and could not detect large particles. The porous tube dilutor could successfully remove the already condensed water droplet particles generated by a humidifier in a $30m^3$ chamber.

Growth of $In_{0.53}Ga_{0.47}As$ Iattice matched to Inp substrate by low pressure metalorganic chemical vapor deposition (저압 유기금속 화학증착법을 이용한 InP 기판에 격자 일치된 $In_{0.53}Ga_{0.47}As$ 에피층의 성장)

  • 박형수;문영부;윤의준;조학동;강태원
    • Journal of the Korean Vacuum Society
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    • v.5 no.3
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    • pp.206-212
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    • 1996
  • $In_{1-x}Ga_xAs$ epitaxial layers were grown at 76 Torr by low pressure metalorganic chemical vapor deposition (LP-MOCVD). Growth rate did not change much with growth temperature. Surface morphology of $In_{1-x}Ga_xAs$ epitaxial layer was affected by lattice mismatch, growth temperature and $AsH_3/(TMIn+TMGa)$ ratio. A high quality epilayer showed a full width at half maximum of 2.8 meV by photoluminescence measurement at 5K. The composition of the $In_{1-x}Ga_xAs$ was determined by the relative gas phase diffusion of TMIn and TMGa. Lattice mismatch and growth temperature were the most important variables that determine the electrical properties of $In_{1-x}Ga_xAs$ epitaxial layers. At optimized growth condition, it was possible to obtain a high quality $In_{1-x}Ga_xAs$ epilayers with a electron concentration as low as $8{\times}10^{14}/cm^3$ and an electron mobility as high as 11,000$\textrm{cm}^2$/Vsec at room temperature.

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Solid-liquid Interface Shape in LiF Single Crystal Growth (LiF 단결정 성장에서 고체-액체의 계면형상)

  • 정대식;오근호
    • Journal of the Korean Ceramic Society
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    • v.21 no.3
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    • pp.271-277
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    • 1984
  • To study interface between crystals grown and molten state in the crusible. Pulling and rotating rate of the shaft were varied in LiF crystal growth by Czochralski method. Lower speed of the pulling and rotating rate increased the degree of convexity in solid-liquid interface and higher speed of the pulling and rotating rate decreased it. Optimum condition of LiF crystal growth obtained as pulling rate was 6.5cm/h when it rotated as 46rpm.

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Thermal Annealing Condition Dependence of Ion-implanted Silicon Recrystallization (열처리 조건에 따른 이온주입된 실리콘의 재결정화)

  • 이창희;이순일
    • Journal of the Korean Vacuum Society
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    • v.4 no.4
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    • pp.386-393
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    • 1995
  • 이온주입된 실리콘 시료들의 열처리 조건에 따른 재결정화를 분광 타원해석법(Spectroscopic Ellipsometry, SE)을 사용하여 연구하였다. 열처리 후에도 잔류하는 결함들의 양과 분포를 구하기 위한 시료의 층구조 분석에 있어서 손상층의 유효굴절율은 Bruggeman 유효매질이론을 이용하여 구하였으며 기준 비정질실리콘 데이터로서는 완화된 비정질실리콘의 광학상수와 이온주입에 의해서 만들어진 비정질 실리콘의 광학상수를 함께 사용하였다. 조사된 대부분의 열처리 조건하에서 고체상 적층성장(solid-phase epitaxial growth)과정에 따라 비정질층이 재결정화되는 것이 관측되었다.

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A study on the electrolytic properties of $CaF_2$ crystals with $YF_3$ addition ($YF_3 $ 첨가에 따른 $CaF_2 $ 결정의 고체전해질 특성에 관한 연구)

  • Cha, Y.W.;Park, D.C.;Orr, K.K.
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.4 no.1
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    • pp.21-32
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    • 1994
  • $CaF_2$ crystals were grown with various growth rates by Bridgman method, and the electrical properties of these were studied to examine the changes of ionic conductivities with growth rates by AC Impedance Analyzer. As the growth rates were higher, $CaF_2$ crystals were grown to polycrystals from single crystal. And as grain boundaries and various defects were altered, the ionic conductivities were changed dramatically. $YF_3$ added to $CaF_2$ for disorderizing $CaF_2$ structure and improving the number of $F^-$ carriers and vacancies in $CaF_2$ crystals. Then $Ca_{1-x}Y_XF_{2+X}$ crystals were gained. And the ionic conductivities of $Ca_{1-x}Y_XF_{2+X}$ crystals were investigated with $YF_3$ addition. The ionic conductivities of $CaF_2$ and $Ca_{1-x}Y_XF_{2+X}$ crystals with temperatures were compared. In addition, the effects of clusterings and defects on the electrical properties of solid electrolytes were researched.

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Cracking of S2 Ice by Spherical Indentation (구형관입에 의한 S2 얼음의 균열)

  • Ko, Sang-Ryong
    • Journal of Ocean Engineering and Technology
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    • v.12 no.3 s.29
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    • pp.42-48
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    • 1998
  • 구형 관입시험에 의한 얼음의 균열을 연구 하였다. $-10^{circ}C$에서 S2 기둥얼음의 시편(152mm X 152mm X 152mm)에 stainless 강으로 된 구(지름 25.4mm)로 하중을 가하였다. 구형indentor는 얼음 시편의 장축인 기둥방향에 수직으로 하중을 가하였으며 이때 변위율은 0.038mm/s로 하여 단조증가 하중 시험을 하였다. 하중을 가하기 시작하면 indentor 하부에서 crushing 이 발생하고, 하중이 증가함에 따라서 방사선 균열 또는 횡균열이 성장하여 splitting 또는 spallation이 발생하였다. 단조증가 하중 때와 동일한 indentor를 사용하여 하중 및 비하중율 0.5KN/s로 맥박하중을 가할 때 이들 방사선 균열 및 횡 균열이 발생 성장하였다. 첫 맥박 하중의 크기는 1KN으로 하고 그 뒤 계속 이어지는 시험은 맥박 하중의 크기를 증가시킨 뒤 행하였으며 균열 길이는 맥박과 맥박 사이에서 계측 하였다. 기타 취성고체에서 관찰 되었던 것과 같이 방사선 균열 및 측면균열의 길이는 impression 반지름과 하나의 지수법칙이 성립함을 보여주었다.

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