• Transactions of the Korean Society of Mechanical Engineers B
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• v.27 no.2
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• pp.227-235
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• 2003

The WSGG-based narrow band model was employed to solve the radiative transfer equations along isothermal and non-isothermal paths through $CO_2-H_2O-N_2$ gas mixtures at 1 atm. When the WSGGM is applied for arbitrary gas mixtures by considering the multiplication property of transmissivity in overlapping bands, the number of gray gases is significantly increased. To reduce the computation time, three different regrouping methods for the gray gases are tested in obtaining the mean absorption coefficient for each gray gas group. Among them, the regrouping method by minimizing the regrouping error shows the best results. For the isothermal media, 10 gray gases show fairly good agreement with the results by statistical narrow band(SNB) model which are regarded as reference solutions. For non-isothermal media, 20 gray gases show good agreement with reference solutions.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.37 no.9
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• pp.38-48
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• 2000

This paper presents the photonic bandgap structure that has a defect mode within a broad stopband. In order to create a broad stopband, we eliminated one of periodic stopbands of PBG structure by using a quarter-wavelength transformer and cascaded another PBG structure having a center frequency corresponding to the eliminated stopband. We have demonstrated that it is a simple and effective method that can solve an overlapping problem of periodic stopband in two cascaded PBG structures.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.34 no.10
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• pp.1507-1512
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• 2010

In this study, the plasma induced by $CO_2$ laser lap welding of 6t Zn coated steel used for ship building was measured using photodiodes and a microphone. Then, the welding phenomenon with gap clearance of lap joint was compared with RMS-treated signal. Thus, we found that intensity of the RMS-treated signal increased with Zn vaporization; further, the presence of defects results in rapid variations with the RMS value as a function of lap-joint parameters. Besides, the FFT value of the raw signal with variations of changing welding parameters was calculated, and then the calculated FFT frequency value was set as the bandwidth of digital filter for a more accurate in-process monitoring. The RMS values were acquired by filtering the raw signal. By matching the weld beads and the calculated RMS values, we confirmed that there is a strong relationship between the signals and the defects.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.6
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• pp.715-720
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• 2016

This paper proposes a PWM (Pulse Width Modulation) voltage mode DC-DC step-up converter for portable devices. The converter, which is operated with a 1 MHz switching frequency, is capable of reducing the mounting area of passive devices, such as inductor and capacitor, and is suitable for compact mobile products. This step-up converter consists of a power stage and a control block. The circuit elements of the power stage are an inductor, output capacitor, MOS transistors Meanwhile, control block consist of OPAMP (operational amplifier), BGR (band gap reference), soft-start, hysteresis comparator, and non-overlap driver and some protection circuits (OVP, TSD, UVLO). The hysteresis comparator and non-overlapping drivers reduce the output ripple and the effects of noise to improve safety. The proposed step-up converter was designed and verified in Magnachip/Hynix 0.18um 1-poly, 6-metal CMOS process technology. The output voltage was 5 V with a 3.3 V input voltage, output current of 100 mA, output ripple less than 1% of the output voltage, and a switching frequency of 1 MHz. These designed DC-DC step-up converters could be applied to the Personal Digital Assistants(PDA), cellular Phones, Laptop Computer, etc.

• Journal of the Korean Magnetics Society
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• v.17 no.4
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• pp.166-171
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• 2007

We report the magneto-transport properties of an individual single crystalline Bi nanowire grown by a spontaneous growth method. We have successfully fabricated a four-terminal device based on an individual 400-nm-diameter nanowire using plasma etching technique to remove an oxide layer forming on the outer surface of the nanowire. The transverse MR (2496% at 110 K) and longitudinal MR ratios (38% at 2 K) for the Bi nanowire were found to be the largest known values in Bi nanowires. This result demonstrates that the Bi nanowires grown by the spontaneous growth method are the highest-quality single crystalline in the literatures ever reported. We find that temperature dependence of Fermi energy ($E_F$) and band overlap (${\triangle}_0$) leads to the imbalance between electron concentration ($n_e$) and hole concentration ($n_h$) in the Bi nanowire, which is good agreement with the calculated $n_e\;and\;n_h$ from the respective density of states, N(E), for electrons and holes. We also find that the imbalance of $n_e\;and\;n_h$ plays a crucial role in determining magnetoresistance (MR) at T<75 K for $R_T$ and at T<205 K for $R_L$, while mean-free path is responsible for MR at T>75 K for $R_T$ and T>205 K for $R_L$.