• Clinical and Experimental Pediatrics
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• v.48 no.2
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• pp.191-196
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• 2005

Purpose : Short stature is one of the characteristic features of Turner syndrome. We investigated the factors affecting final adult height(FAH) in patients with Turner syndrome. Methods : The study group was comprised of 60 patients who were diagnosed with Turner syndrome by chromosomal study and clinical phenotypes and attained FAH. Data were obtained from retrospective review of the medical records. We analyzed the factors influencing FAH in growth hormone(GH) treated and GH untreated groups. Results : Sixty patients were enrolled; 48 patients received GH treatment, and 12 patients did not. Mean duration of GH treatment was 35.8 months(range 4 to 120 months), and mean dosage of GH was $0.8{\pm}0.2IU/kg/wk$ in GH treated group. Mean growth velocity was $5.6{\pm}2.0cm/yr$, which was significantly higher than that during pretreatment period. In the GH treated group, mean chronological age, bone age, mean height, and height standard deviation(SD) score at GH treatment were $12.2{\pm}2.7yr$ $10.3{\pm}2.5yr$ $127.5{\pm}10.1cm$ and $-3.1{\pm}1.1$, respectively. In the GH treated group, the mean FAH and SD score of FAH were $146.9{\pm}5.8cm$ and $-2.7{\pm}1.2$, respectively, which showed significant differences compared with those of the GH untreated group. Analyzing the factors affecting FAH in GH-treated patients, only the SD score of height at the time of treatment was significantly related to FAH. Conclusion : GH treatment leads to an increment in FAH in patients with Turner syndrome. Average FAH gain was as much as 5.8 cm. SD score of height at the time of GH treatment was the only factor influencing FAH.

• Journal of the Korean BIBLIA Society for library and Information Science
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• v.11 no.1
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• pp.111-124
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• 2000

The Purpose of this study is to find out the relationships of affective outcomes and work itself performed by librarians. General job satisfaction, internal work motivation and growth satisfaction were set as independent variables in this study. Work effectiveness was set as a dependent variable. The result of multiple regressions by the data from 88 systems librarians who work at university libraries showed that affective outcomes affect work effectiveness, and growth satisfaction is important to affective outcome.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.494-503
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• 1997

We investigated the initial stages of formation of the Cu/polyimide interface using another two methods by X-ray photoelectron spectroscopy. : One, in-situ measurement with increasing of Cu deposition thickness onto polyimide(PI), the other, measurement with decreasing of Cu thickness of Cu/pI film by $Ar^+$ ion etching. From these results, we find that the chemical reactions exist in Cu/PI interface. However, the measured chemical reactions were different according to experimental method.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.1
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• pp.84-88
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• 1999

The behavior of oxygen precipitation was investigated in radial direction using Si wafers with different vacancy-related defects generation area. The behavior of oxygen precipitation in radial direction is strongly dependent on the size of vacancy rich area which is related with crystal growth condition. Oxygen precipitation rate is more enhanced in vacancy rich area than that of interstitial rich area. And anomalous oxygen precipitation is generated in the marginal bands of vacancy and interstial area. In V/I boundary, however, oxygen precipitation is suppressed to nearly perfect.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.1 no.1
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• pp.74-81
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• 1991

The temperature profile of Czochralski single crystal growth system was simulated considering the fluid flow and surface radiation heat transfer. View factors of surface elements were calculated for radiation heat transfer. Two phases(solid and liquid) were treated as a continuous phase by assigning artificial large viscosity to the solid phase and latent heat was accounted by iterative heat revolution method. The solidification model was applied to solid front of the pure Ga during the melting to verify the model. The whole simulation model of CZ system was applied to the growth Al single crystal.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.1
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• pp.42-45
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• 1994

Deposition of silicon on pretreated sapphire and glass substrates has been investigated by the solution growth method at low temperatures. An average 14 $\mu\textrm{m}$ thickness of silicon was grown over a large area on sapphire substrate originally coated with a much thinner silicon layer [0.5 $\mu\textrm{m}$ (100) Si/(1102) sapphire)] at low temperatures from $380~460^{\cire}C$. Successful results were obtained from surface treated glass substrates in the temperatures range from $420~520^{\circ}C$.

• Journal of the Korean Vacuum Society
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• v.5 no.4
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• pp.387-390
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• 1996

The study has been performed that the high purity of platinum crystal was grown by rf floating zone refined technique. Direct electric current was also present to examine the controlling striated structure during the sample grown. It has been proved that current and orientation could affect suppression of the striation structure in Pt. Substructure in Pt was thermally unstable and was able to be removed by the annealing technique.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1469-1470
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• 2011

본 연구에서는 ZnO 입자 다중 성장을 이용하여 DSC를 제작하여 ZnO DSC의 가능성을 점검하고자 하였다. ZnO 입자 성장은 zinc acetate solution을 이용하여 seed layer를 제작한 후 zinc nitrate와 NaOH 혼합 용액에 다중성장 시킴으로써 완성되며 이를 이용하여 ZnO DSC를 제작하였다. 그 결과 ZnO가 입자형태로 얻어짐을 확인하고 ZnO DSC를 성공적으로 제작할 수 있었으며 ZnO 입자 성장 후 소성을 통해 ZnO DSC의 성능을 0.406%에서 1.385%까지 개선시킬 수 있었다.

• Proceedings of the Korean Operations and Management Science Society Conference
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• 2004.05a
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• pp.67-70
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• 2004

카플란과 노턴에 의해 1992년에 처음 소개된 BSC (Balanced Scorecard)의 '재무', '고객', '내부프로세스' 그리고 '학습과 성장'의 4개 시각 중 '학습과 성장' 시각의 핵심성과지표를 도출하는 것이 본 연구의 목적이다. 기존 연구에서 제시된 평가 지표의 한계점을 제시하고 성과지표 도출의 근원을 조직 행동론에서 제시하고 있는 성과개념과 과정이론에서 밝혀냄으로서 '학습과 성장'시각의 목표인 다른 세 시각의 하부구조 및 동인을 달성하고자 조직 행동이론 관점의 핵심성과지표를 제시하고자 한다. 또한 정보기술이 기업의 장기적인 역랑을 배가시키고 경쟁우위를 확보하기 위한 전략적 수단으로 인식됨에 따라 정보기술의 역할 및 효과성에 대한 측정과 평가가 중요한 이슈로 떠오르고 있기 때문에 '학습과 성장' 시각에서 인적자원의 역랑과의 균형있는 정보기술 역량을 측정하고 평가할 수 있는 지표를 제시하고자 한다. 이는 기업 경영활동의 근간이 되는 구성원과 단위조직, 그리고 정보기술이 기업성과데 미치는 영향을 정확히 파악하고 그 결과를 구성원과 조직의 보상체계로 연결시킬 수 있는 객관적인 잣대로서 작용하게 된다.

• Journal of the Korean Vacuum Society
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• v.4 no.1
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• pp.40-45
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• 1995

직경 2인치의 YBa2Cu3O7-y 타겟을 사용하여 높은 스퍼터링 기체 압력 하에서 off-axis DC-마그네트론 스퍼터링 방법으로 MgO(100) 단결정 기판 위에 YBa2Cu3O7-y 박막을 c축 방향으로 in-냐셔 성장시킬 때 기판의 접지 여부와 인가전류의 양이 박막 성장에 미치는 여향을 연구하였다. 그 결과 접지 여부는 박막의 초전도 변환온도, 전기수송 특성, 결정 구조적 특성에는 영향을 거의 주지 않는 반면 표면상태에는 상당한 영향을 미치며, 인가전류의 양은 초전도 특성에 많은 영향을 미침을 발견하였다. 기판온도 $670^{\circ}C$, 스퍼터링 기체압력 300mTorr, 아르곤 대 산소 분압비 5:1의 조건에서 인가전류의 최적량은 300-500 mA이었으며 평균 박막 성장속도는 $0.11-0.14AA$/s로 매우 낮았다. 기판의 접지 효과와 낮은 성장속도의 원인에 대해 고찰해 본다.