• Electrical & Electronic Materials
• /
• v.10 no.10
• /
• pp.1034-1040
• /
• 1997

A solar cell conversion effiency was degraded by grain boundary effect in polycrystalline silicon. Grain boundaries acted as potential barriers as well as recombination centers for the photo-generated carriers. To reduce these effects of the grain boundaries we investigated various influencing factors such as emitter thickness thermal treatment preferential chemical etching of grain boundaries grid design contact metal and top metallization along boundaries. Pretreatment in $N_2$atmosphere and gettering by POCl$_3$and Al were performed to obtain multicrystalline silicon of the reduced defect density. Structural electrical and optical properties of slar cells were characterized before and after each fabrication process. Improved conversion efficiencies of solar cell were obtained by a combination of pretreatment above 90$0^{\circ}C$ emitter layer of 0.43${\mu}{\textrm}{m}$ Al diffusion in to grain boundaries on rear side fine grid finger top Yb metal and buried contact metallization along grain boundaries.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.05a
• /
• pp.597-600
• /
• 1999

A solar cell conversion efficiency was degraded by grain boundary effect in polycrystalline silicon To reduce grain boundary effect, we performed a preferential grain boundary etching, POC$_3$ n-type emitter doping, and then ITO film growth on poly- Si. Among the various preferential etchants, Schimmel etch solution exhibited the best result having grain boundary etch depth higher than 10 ${\mu}{\textrm}{m}$. RF magnetron sputter grown ITO films showed a low resistivity of 10$^{-4}$ $\Omega$ -cm and high transmittance of 85 %. With well fabricated poly-Si solar cells, we were able to achieve as high as 15 % conversion efficiency at the input power of 20 mW/$\textrm{cm}^2$.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.6 no.3
• /
• pp.431-438
• /
• 1996

Transmission electron microscopy has been used to investigate the microstructure of hot-pressed $TiB_{2}$. Thin foil specimens, prepared by conventional ion beam thinning, revealed many features which originated from the crystallographic anisotropy of hexagonal $TiB_{2}$. It was observed that in these specimens Fe-impurities are precipitated to form secondary Fe-rich phases at grain triple edges, in grain boundaries and sometimes in-grain. These Fe-rich precipitates were characterised by their coherence or semi-coherence to a favourably oriented grain at a grain triple edge or grain boundaries or to the matrix $TiB_{2}$ phase.

• 한국초전도학회:학술대회논문집
• /
• v.9
• /
• pp.363-368
• /
• 1999

Y-5a-Cu-O superconductors were prepared by TSMG (Top-Seeded Melt Growth) process with multiseeding technique. By using several seeds at the same time, large samples could be fabricated in a short time with simple heat treatment. However, the samples fabricated by normal multiseeding technique show the rapid decrease of trapped magnetic field value across the grain boundaries because of the residual liquid layer. To remove the residual liquid layer, modified multiseeding was newly suggested. The individual grains were combined as single domain, and did not show deterioration of magnetic property at the boundary. The formation mechanism of a well-combined domain by multiseeding technique was discussed.

• Proceedings of the Korean Nuclear Society Conference
• /
• 1999.05a
• /
• pp.291-291
• /
• 1999

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2003.11a
• /
• pp.70-70
• /
• 2003

금속용액을 이용하여 측면고상결정화 시킨 다결정 실리콘 박막내의 고각입계를 줄이기 위해 서 고온열처리를 실시하였다. SEM과 TEM을 이용하여 다결정 실리콘내의 바늘모양의 결정립의 폭의 증가를 관찰하였고, 결정 립내의 결함이 감소를 관찰하였다. 그리고 결정화된 다결정 실리콘의 표면 거칠기를 AFM이용하여 퍼니스에서 53$0^{\circ}C$에서 25시간 동안 결정화 시킨 시편과 이후 80$0^{\circ}C$에서 40분간 추가 고온 열처리시킨 시편을 비교한 결과 6.09$\AA$에서 4.22$\AA$으로 개선되었음을 확인할 수 있었다. 박막내의 금속에 의한 오염을 줄이기 위해 금속의 농도를 줄인 금속용액을 결정화에 사용하였다. 이때 저농도 금속용액을 사용하여 측면결정화시킨 다결정 실리콘 박막내의 소각입계를 이루는 결정립군의 크기가 고농도 금속용액을 이용하여 측면결정화시킨 경우보다 증가함을 확인 할 수 있었다. 박막트랜지스터를 제작하여 트랜지스터의 전기적특성을 살펴보았다. 전계이동도가 80$0^{\circ}C$ 고온 열처리에 의해서 53$\textrm{cm}^2$/Vsec 에서 95$\textrm{cm}^2$/Vsec 로 상승하였는데 이는 고온열처리에 의해서 측면결정화된 다결정 실리콘내의 트랩 밀도가 2.2$\times$$10^{12}$/$\textrm{cm}^2$ 에서 1.3$\times$$10^{12}$$\textrm{cm}^2$로 감소하였기 때문이다.

• Korean Journal of Materials Research
• /
• v.9 no.9
• /
• pp.919-925
• /
• 1999

Grain boundary characteristics and corrosion behavior of Alloy 600 material were investigated using the concept of grain boundary control by thermomechanical treatment(TMT). The grain boundary character distribution (GBCD) was analyzed by electron backscattered diffraction pattern. The effects of GBeD variation on intergranular at tack(JGA) and primary water stress corrosion cracking(PWSeC) were also evaluated. Changes in the fraction of coinci dence site lattice(CSL) boundaries in each cycle of TMT process were not distinguishable, but the total eSL boundary frequencies for TMT specimens increased about 10% compared with those of the commercial Alloy 600 material. It was found from IGA tests that the resistance to IGA was improved by TMT process. However, it was found from PWSCC test that repeating of TMT cycles resulted in the gradual decrease of the time to failure and the maximum load due to change in grain boundary characteristics, while the average crack propagation rate of primary crack increased mainly due to suppression of secondary crack propagation. It is considered that these corrosion characteristics in TMT specimens is attributed to 'fine tuning of grain boundary' mechanism.

• Korean Journal of Materials Research
• /
• v.3 no.5
• /
• pp.546-552
• /
• 1993

본 연구에서는 입계의 성질을 이용한 PTCR 재료에 입계 modifier로서 $Bi_{2}$$O_{3}$와 BN을 첨가하고 입계의 미세구조와 결함농도를 변화시켜 이에 따른 소결 및 전기적 특성변화를 TMA, XRD, 복합 임피던스방법 등을 이용하여 해석하였다. 실험 결과 Y이 도우핑된 BaT$iO_{3}$ PTCR 재료에 $Bi_{2}$$O_{3}$를 첨가하였을때 약 0.1mol%까지 고용이 되는 것으로 밝혀졌다. $Bi_{2}$$O_{3}$를 고용한계 이하로 첨가시에는 생성되는 vacancy등의 결함으로 말미암아 Y-BaT$iO_{3}$의 치밀화가 촉진되었으나, 그 이상 첨가하면 치밀화 뿐만 아니라 결정립 성장도 억제되었다.$Bi_{2}$$O_{3}$ 결정립 내부에 Ba와 Ti vacancy가 동시에 생길 수 있어 고온저항이 높아짐을 알 수 있었다. BN은 BaT$iO_{3}$에 고용이 되지 않는 것으로 밝혀졌으며 $B_{2}$O/wub/3를 주성분으로한 액상형성으로 인하여 저온에서의 급격한 치밀화가 관찰되었다. 또 Ba-Y-Ti-B-O의 비정질 상이 tripie junction에 존재함으로서 상온저항이 크게 변화하였으며, PTCR jump도 높아졌다.

• Fire Science and Engineering
• /
• v.10 no.4
• /
• pp.3-12
• /
• 1996

The aim of the present study is to find out the effect of cooling rate on the electrical behavior of ZnO varistors. The microstructure, 1-V characteristics and complex impedance spectra were investigated under the change of cooling rates. It is found that at cooling rate $200^{\circ}$/h, nonlinearity and breakdown voltage reached a maximum value which may show that good intergranular layer is formed as a results of proper cooling rate. Complex Impedance spectras were measured as a function of frequency range 100Hz to 13MHz to determine grain and grainboundary resistance. The semicircles were attributed to the dependence of grain and grainboundary resistance on cooling rates.

• Proceedings of the Korean Nuclear Society Conference
• /
• 1996.05c
• /
• pp.73-78
• /
• 1996

Type 316L 스테인레스강에 대한 질소첨가의 효과를 분석하기 위해 질소를 소량(0.024%)첨가한 합금과 적정량(0.15%) 첨가한 합금을 용해하여 입계부식특성 평가를 하였다. Oxalic시험 및 DL-EPR 시험 결과 적정량의 질소를 첨가한 합금이 소량 첨가한 금보다 우수한 예민화 특성을 보였다. TEM에 의한 미세구조 분석 결과 저질소 합금의 경우 비교적 짧은 열처리 시간에 M$_{23}$C$_{6}$ type의 석출물이 입계를 따라 형성되고 시효시간이 경과 할수록 그양이 급격히 증가하는 양상을 보인 반면에 적정 질소 첨가 합금의 경우 탄화물 생성이 비교적 긴 시효시간으로 늦추어져 예민화 실험 결과와 일치된 결과를 보였다. 두 합금 모두에서 탄화물 이외에 Mo의 함량이 매우 높은 석출물이 관찰되었는데 적정질소 첨가강의 경우 시효 시간의 경과에 따라 초기의 작은 cluster들의 형태에서 시작하여 얇은 박막의 형태로 입계면을 따라 성장하는 양상을 보였고, 반면에 저질소합금의 경우 입계를 따른 작은 석출물들이 cluster들로는 성장하였으나 장시간 시효가 진행됨에 따라 탄화물의 성장에 의해 박막 형태로는 성장하지 못하였다. Mo-rich 박막형상 석출물에 대한 분석 결과 20-면체 준결정상의 형태에 매우 가까운 결정구조를 보였으며 때로 η상과 매우 밀접한 회절 패턴도 관찰되었다. 이러한 상은 적정 질소첨가 합금에서의 탄화물 생성 지연과도 관련이 있을 것으로 추정되었다.