• Polymer(Korea)
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• v.35 no.5
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• pp.385-389
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• 2011

In rubbing process, process factors, the properties of alignment layer and the physical properties of rubbing cloth have acted as important variables. These factors affect the orientation properties of the alignment layer by rubbed extent that is determined by rubbing density and rubbing force. In this work, we studied the effects of rubbing cloths with different pile density and rigidity on rubbing density(length) and rubbing force. As the pile density and rigidity of rubbing cloths increased, the birefringence and the surface roughness of the rubbed alignment layers became bigger, but the characteristics of rubbing-effect had differed each other. The pile density of rubbing cloths which was related with the number of pile, affected the rubbing density(length). On the other hand, the pile rigidity of rubbing was closely related to rubbing force rather than the rubbing density(length).

• Journal of IKEEE
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• v.23 no.3
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• pp.904-909
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• 2019

Using the ion-beam irradiated indium zinc oxide (IZO) films which was cured at $100^{\circ}C$, uniform LC and homogeneous alignment of liquid crystal (LC) molecules was achieved. The IZO film was deposited on the glass substrate at the curing temperature of $100^{\circ}C$ and irradiated by the ion-beam which is an LC alignment method. To verify the LC alignment characteristics, polarizing optical microscope and the crystal rotation method were used. Additionally, it was confirmed that the LC cell with the IZO films had an enough thermal budget for high-quality LC applications. Field emission scanning electron microscope was conducted as a surface analysis to evaluate the effect of the ion-beam irradiation on the IZO films. Through this, it was revealed that the ion-beam irradiation induced rough surface with anisotropic characteristics. Finally, electro-optical (EO) performances of the twisted-nematic cells with the IZO films were collected and it was confirmed that this cell had better EO performances than the conventional rubbed polyimide. Furthermore, the polar anchoring energy was measured and a suitable value for stable LC device operation was achieved.

• Journal of IKEEE
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• v.25 no.1
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• pp.64-68
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• 2021

We demonstrate an effect of annealing temperature on imprinting process of BiLaO thin film for liquid crystal alignment. BiLaO prepared sol-gel process was deposited by spin coating on a glass substrate, and then transferred to a pre-fabricated aligned pattern which is fabricated on a silicon wafer by laser interference lithography. Thin film was annealed at different temperature of 100, 150, 200, and 250 ℃. From the polarized optical microscopy analysis, the liquid crystal orientation was not uniform at the annealing temperature of 200 ℃ or lower and the uniform liquid crystal alignment characteristics were confirmed at the annealing temperature of 250 ℃. From atomic force microscopy, the pattern was not transferred at a temperature of 200 ℃ or lower. In contrast, the pattern was transferred at 250 ℃. Anisotropy of the thin film was obtained by the alignment pattern transferred at a temperature of 250 ℃, and the liquid crystal molecules could be evenly oriented on the thin film. Therefore, it was confirmed that the liquid crystal alignment process by the imprinting process of the BiLaO oxide film was affected by the annealing temperature.

• Korean Journal of Crystallography
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• v.3 no.2
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• pp.98-110
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• 1992

B-SiC thin films were fabricated on Si(100) substrate under 1 atom by fVD. The effects of deposition conditions on the growth and the properties especially crystallinity and prefer ential alignment of these thin films were investigated. SiH4 and CH4 were used as source gases and H2 as Carrier gas. Th9 growth Of B-SiC thin films with changing parameters such as the growth temperature, the ratio of source gases (SiH4/CH4 ) and the total amount of source gases. The grown thin films were characterized by using SEM, a -step, XRD, Raman Spectro- scopy and TEM. Chemical conversion process improved the quality of thin films due to the formation of SiC buffer layer. The crystallinity of SiC thin films was improved when the growth temperature was higher than l150t and the amount of CH4 exceeded that of SiH4. The better crystallinity, the better alignment to the crystalline direction of substates. TEM analyses of the good quality thin films showed that the grain size was bigger at the surface than at the interface and the defect density is not depend on the ratio of the source gases.

• Journal of the Korean Wood Science and Technology
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• v.29 no.1
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• pp.60-67
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• 2001

The microscopic characteristics and cellulose structures of primary and secondary tissues in Pinus densiflora S. et Z. were examined. Cells of primary tissue in cross section showed an irregular arrangement and round shape. Fiber lengths were 200 to $250{\mu}m$ in primary tissue, and 1,500 to $1,600{\mu}m$ in secondary tissue. Cell diameters in primary tissue were larger than those in secondary tissue; 40 to $50{\mu}m$ in former and 10 to $20{\mu}m$ in latter. Crystallite width and d-spacing of (200) in both tissues did not show any significant differences. However, crystallinity indices by Segal's method showed significant differences as 23% in primary tissue and 35% in secondary tissue. In the orientation of cellulose microfibril, primary tissues had a random pattern, whereas, secondary tissues presented an oriented pattern with 20 to 30 degree. The cellulose crystalline of primary tissue was easily transformed into cellulose II by mercerization, but that of secondary tissue hardly transformed. It is considered that the difference of crystal transformation in both tissues could be caused by the difference of lignification.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.2
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• pp.255-262
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• 2003

In this paper, an investigation on the ZnO film deposition using radio-frequency magnetic sputtering techniques on aluminum bottom electrode for film bulk acoustic wave resonator (FBAR) filter applications and the temperature effects on the ZnO film growth is presented. The investigation on how much impact the actual process temperature may have on the crystal growth is more meaningful if it is considered that the piezoelectricity property of ZnO films plays a dominant role in determining the resonance characteristics of FBAR devices and the piezoelectricity is determined by the degree of the c-axis preferred orientation of the deposited ZnO films. In this experiment, it was found that the growth of ZnO crystals has a strong dependence on the deposition temperature ranged from room temperature to $350^{\circ}C$ regardless of the RF powers applied and there exist 3 temperature regions divided by 2 critical temperatures according to the degree of the c-axis preferred orientation. Overall, below $200^{\circ}C$, ZnO deposition results in columnar grains with a highly preferred c-axis orientation. With this ZnO film, a multilayered FBAR structure could be realized successfully.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.2
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• pp.56-62
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• 2003

Epitaxial $Bi_4Ti_3O_{12}$ films on $SrTiO_3$(100), L$aA1O_3$(100) and MgO(100) were prepared by sol-gel process using metal naphthenate as a starting material. As-deposited films were pyrolyzed at $500^{\circ}C$ for 10 min In air and annealed at $750^{\circ}C$ for 30 min in air. Crystallinity and in-plane alignment of the film were investigated by X-ray diffraction $\theta$-2$\theta$ scan and P scanning. A field emission-scanning electron microscope and an atomic force microscope were used for characterizing the surface morphology and the surface roughness of the film. The film prepared on MgO(100) showed the most poor crystallinity and in-plane alignment, compared to those on the other substrates. While the films on $LaA1O_3$(100) and $SrTiO_3$(100) having high crystallinity and in-plane alignment showed the form of columnar grain growth, the film on MgO(100) which had poor crystallinity showed the form of acicula grain growth.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.4
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• pp.595-599
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• 1996

The behaviour of the internal bubbles present in $CaF_{2}$ crystals was characterized crystallographically using a variety of the mircroscopical technique. The bubble defects were found to be aligned on the characteristic planes and directions depending on the crystals structure of the $CaF_{2}$. The AFM analysis revealed that these behaviors are related to the S-surface formation by the negative grain growth mechanism.

• Journal of the Korean Ceramic Society
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• v.41 no.9
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• pp.653-656
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• 2004

We report the magnetic properties, microstructures, and crystal orientations of the CrO$_2$ thin films on TiO$_2$ single crystals. CrO$_2$ thin films were deposited by thermal decompositions with CrO$_3$ source materials. The microstructure of (110) oriented CrO$_2$ thin films deposited on (110) TiO$_2$ single crystals were uniform. As the oxygen flow rates increased, the resistivity, coercive field, and remnant magnetization of the CrO$_2$ thin films on TiO$_2$ single crystals decreased.

• Polymer(Korea)
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• v.30 no.6
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• pp.563-567
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• 2006

Poly(vinyl alcohol) (PVA) and gelatin (GEL) blend membranes were prepared by solution casting method under a high electric field. SEM observation of the membrane showed that gelatin rich domains were elongated and oriented to the direction of the applied electric field in PVA matrix. This can be attributed to the electrostatic emulsifying effects due to a reduction in interfacial tension. In addition, it was observed through WAXD and swelling measurements that the degree of crystallinity of membranes increased with applied electric field strength. This may be interpreted to be caused by the orientation effect of GEL domains in the blend membrane, and the self-annealing effect due to some heat generated from high electric field during casting.