• Progress in Medical Physics
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• v.16 no.1
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• pp.24-31
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• 2005

The stereotactic radiosurgery (SRS) describes a method of delivering a high dose of radiation to a small tar-get volume in the brain, generally in a single fraction, while the dose delivered to the surrounding normal tissue should be minimized. To perform automatic plan of the SRS, a new method of multi-isocenter/shot linear accelerator (linac) and gamma knife (GK) radiosurgery treatment plan was developed, based on a physical lattice structure in target. The optimal radiosurgical plan had been constructed by many beam parameters in a linear accelerator or gamma knife-based radiation therapy. In this work, an isocenter/shot was modeled as a sphere, which is equal to the circular collimator/helmet hole size because the dimension of the 50% isodose level in the dose profile is similar to its size. In a computer-aided system, it accomplished first an automatic arrangement of multi-isocenter/shot considering two parameters such as positions and collimator/helmet sizes for each isocenter/shot. Simultaneously, an irregularly shaped target was approximated by cubic structures through computation of voxel units. The treatment planning method by the technique was evaluated as a dose distribution by dose volume histograms, dose conformity, and dose homogeneity to targets. For irregularly shaped targets, the new method performed optimal multi-isocenter packing, and it only took a few seconds in a computer-aided system. The targets were included in a more than 50% isodose curve. The dose conformity was ordinarily acceptable levels and the dose homogeneity was always less than 2.0, satisfying for various targets referred to Radiation Therapy Oncology Group (RTOG) SRS criteria. In conclusion, this approach by physical lattice structure could be a useful radiosurgical plan without restrictions in the various tumor shapes and the different modality techniques such as linac and GK for SRS.

• Journal of the Korea institute for structural maintenance and inspection
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• v.16 no.4
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• pp.34-43
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• 2012

The behaviors of the curved bridges which has been constructed in the RAMP or Interchange are very complicate and different than orthogonal bridges according to the variations of radius of curvature, skew angle and spacing of shoes. Occasionally, the camber of girder and negative reactions can be occurred due to bending and torsional moment. In this study, the effects on the negative reaction in the curved bridge were investigated on the basis of design variables such as radius of curvature, skew angle, and spacing of shoes. For this study, the twin-steel box girder curved bridge with single span which is applicable for the RAMP bridges with span length(L) of 50.0m and width of 9.0m was chosen and the structural analysis to calculate the reactions was conducted using 3-dimensional equivalent grillage system. The value of negative reaction in curved bridges depends on the plan structures of bridges, the formations of structural systems, and the boundary conditions of bearing, so, radius of curvature, skew angle, and spacing of shoes among of design variables were chosen as the parameter and the load combination according to the design standard were considered. According to the results of numerical analysis, the negative reaction in curved bridge increased with an decrease of radius of curvature, skew angle, and spacing of shoes, respectively. Also, in case of skew angle of $60^{\circ}$ the negative reaction has been always occurred without regard to ${\theta}/B$, and in case of skew angle of $75^{\circ}$ the negative reaction hasn't been occurred in ${\theta}/B$ below 0.27 with the radius of curvature of 180m and in ${\theta}/B$ below 0.32 with the radius of curvature of 250m, and in case of skew angle of $90^{\circ}$ the negative reaction hasn't been occurred in the radius of curvature over 180m and in ${\theta}/B$ below 0.38 with the radius of curvature of 130m, The results from this study indicated that occurrence of negative reaction was related to design variables such as radius of curvature, skew angle, and spacing of shoes, and the problems with the stability including negative reaction will be expected to be solved as taken into consideration of the proper combinations of design variables in design of curved bridge.

• Journal of the Korean Magnetics Society
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• v.7 no.2
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• pp.90-96
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• 1997

We have studied crystallographic and magnetic properties of $NdFe_{10.7}Ti_ {1.2}Mo_{0.1}$ by Mossbauer spectroscopy, X-ray diffraction and vibrating sample magnetometer (VSM). The alloys were prepared by arc-melting under an argon atmosphere. The $NdFe_{10.7}Ti_{1.2}Mo_{0.1}$ has pure a single phase, whereas $NdFe_{10.7}Ti_{1.3}$ contains some $\alpha$-Fe, conformed with X-ray diffractometry and Mossbauer measurements. The $NdFe_{10.7}Ti_ {1.2}Mo_{0.1}$ has a $ThMn_{12}-type$ tetragonal structure with $a_0=8.637{\AA}$ and $c_0=4.807{\AA}$. The Curie temperature ($T_c$) is 600 K from the result of Mossbauer measurement performed at various temperatures ranging from 13 to 800 K. Each spectrum of below $T_c$ is fitted with five subspectra of Fe sites in the structure ($8i_1, 8i_2, 8j_2, 8j_1, 8f$). The area fractions of the subspectra at room temperature are 12.3%, 14.0%, 21.0% 11.8%, 40.9%, respectively. Magnetic hyperfine fields for the Fe sites decrease in the order, $H_{hf}(8i)>H_{hf}(8j)>H_{hf}(8f)$. The abrupt changes in the magnetic hyperfine field, an magnetic moment observed at about 160 K in $NdFe_ {10.7} Ti_{1.2}Mo_{0.1}$ are attributed to spin reorientations. The average hyperfine field of the $NdFe_{10.7}Ti_{1.2}Mo_{0.1}$ shows a temperature dependence of $[H_{hf}(T)-H_{hf}(0)]/H_{hf}(0)=-0.34(T/T_C)^{3/2}-0.14(T/T_C)^{5/2}$ for $T/T_c<0.7$, indicative of spin wave excitation. The Debye temperatures of $NdFe_{10.7}Ti_{1.2}Mo_{0.1}$ is found to be Θ=340$\pm$5 K.

• Korean Chemical Engineering Research
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• v.49 no.5
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• pp.633-638
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• 2011

Mn substituted La, Sr or Ba-hexaaluminate were prepared by $(NH_4)_2CO_3$ co-precipitate method and calcined at $1,200^{\circ}C$ for 5 h. Catalysts were characterized by X-ray diffraction and $N_2$ physisorption and scanning electron microscope (SEM). Compared to $SrMnAl_{11}O_{19}$ and $BaMnAl_{11}O_{19}$, $LaMnAl_{11}O_{19}$ in which La located at mirror plane showed better crystallinity and high surface area, 13 $m^2/g$. $LaMnAl_{11}O_{19}$ revealed well developed plate-like structure which is characteristic structure of hexaaluminate. The catalytic activity of methane combustion increased in the following order: $LaMnAl_{11}O_{19}$ > $SrMnAl_{11}O_{19}$ > $BaMnAl_{11}O_{19}$ and was dependent on surface area of catalysts. 60 wt% $CeO_2/LaMnAl_{11}O_{19}$ calcined at $700^{\circ}C$ showed enhanced methane activity and methane was oxidized completely at low temperature ($700^{\circ}C$). It was confirmed that addition of ceria seems to be effective for the low and middle temperature combustion of methane. But, after calcination at high temperature of $1,200^{\circ}C$, it lost the promoting effect of ceria due to increase of ceria particle size and it had a limit to applying to the high temperature catalytic combustion.

• Journal of the Korean Vacuum Society
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• v.18 no.6
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• pp.459-467
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• 2009

$Cd_2GeSe_4$ and $Cd_2GeSe_4:Co^{2+}$ films were prepared on indium-tin-oxide(ITO)-coated glass substrates by using thermal evaporation. The crystallization was achieved by annealing the as-deposited films in flowing nitrogen. X-ray diffraction spectra showed that the $Cd_2GeSe_4$ and the $Cd_2GeSe_4:Co^{2+}$ films were preferentially grown along the (113) orientation. The crystal structure was rhomohedral(hexagonal) with lattice constants of $a=7.405\;{\AA}$ and $c=36.240\;{\AA}$ for $Cd_2GeSe_4$ and $a=7.43\;{\AA}$ and $c=36.81\;{\AA}$ for $Cd_2GeSe_4:Co^{2+}$ films. From the scanning electron microscope images, the $Cd_2GeSe_4$ and $Cd_2GeSe_4:Co^{2+}$ films were plated, and the grain size increased with increasing annealing temperature. The optical energy band gap, measured at room temperature, of the as-deposited $Cd_2GeSe_4$ films was 1.70 eV and increased to about 1.74 eV and of the as-deposited $Cd_2GeSe_4:Co^{2+}$ films was 1.79 eV and decreased to about 1.74 eV upon annealing in flowing nitrogen at temperatures from $200^{\circ}C$ to $500^{\circ}C$. The dynamical behavior of the charge carriers in the $Cd_2GeSe_4$ and $Cd_2GeSe_4:Co^{2+}$ films were investigated by using the photoinduced discharge characteristics technique.

• Korean Journal of Materials Research
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• v.11 no.8
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• pp.629-635
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• 2001

To improve the ductility of $A1_3Hf$ intermetallics, which are the potential high temperature structural materials, the mechanical alloying behavior. the effect of Cu addition on the $Ll_2$ phase formation and the behavior of vacuum hot-pressed consolidation were investigated. During the mechanical alloying by SPEX mill, the $Ll_2 A1_3Hf$ intermetallics with the grain size of 7~8nm was formed after 6 hours of milling in Al-25at.%Hf system. The $Ll_2$ Phase of Al_3Hf$ intermetallics with the addition of 12.5at.%Cu, similar to that of the binary Al-25at.% Hf, was formed, but the milling time necessary for the formationof the $Ll_2$ phase was delayed form 6 hours to 10 hours. The lattice parameter of ternary $Ll_2(Al+Cu)_3Hf$ intermetallics decreased with the increase of Cu content. The onset temperature of $Ll_2$ to $D0_{23}$ phase in $Al_3Hf$ intermetallics was around 38$0^{\circ}C$, the temperature upon completion varied from 48$0^{\circ}C$ to 5$50^{\circ}C$ as the annealing time. The onset temperature of $Ll_2$ to $D0_{23}$ phase transformation in $(Al+ Cu)_3Hf$ intermetallics increased with the amount of Cu and the highest onset temperature of $700^{\circ}C$ was achieved by the Cu addition of 10at.%. The relative density increased from 89% to 90% with the Cu addition of 10at.% in $Al_3Hf$ intermetallics hot-pressed in vacuum under 750MPa at 40$0^{\circ}C$ for 3 hours. The relative density of 92.5% was achieved without the phase transformation and the grain growth as the consolidation temperature increased from 40$0^{\circ}C$ to 50$0^{\circ}C$ in $(Al+Cu)_3Hf$ intermetallics hot-pressed in vacuum under 750MPa for 3 hours.

• Journal of Bio-Environment Control
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• v.25 no.4
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• pp.277-282
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• 2016

This study was aimed to investigate the effect of air-circulation fans on air temperature and relative humidity in a single-span tomato greenhouse (W: 7m, L: 25m, H: 3.2m). According to standard of fan layout by ASAE (1997), a total of 10 fans were bilaterally arranged in 2 rows in the experimental greenhouse. The distributions of air temperature and relative humidity were measured from 6 pm to 8 am under different conditions, with and without fans. The measurement heights were 0.7m, 1.7m and 2.7m. Under the condition of "fans off", the spatial differences of air temperature and relative humidity between upper and lower sides were $1.7^{\circ}C$ and 10.8%, respectively. The operation of 10 fans showed their differences to $0.1^{\circ}C$ and 3.2%. The number of fans and installation direction were evaluated their performance on reducing the spatial variation of air temperature and relative humidity. The experimental layouts were 5 and fans in 2 rows (bilaterally) and 10 fans in the one (same) direction. Under the condition of "6 fans on" and "5 fans on", the spatial differences of air temperature and relative humidity between upper and lower side were $0.3^{\circ}C$, 3.4% and $0.3^{\circ}C$ and 4.0%. The operation of 10 fans in the one direction reduced their differences to $0.5^{\circ}C$ and 4.9%. The overall findings of this study showed that there was no significant differences under each condition. Therefore, this study suggested that it is more economic and effective to install five fans in 2 rows (bilaterally) in the greenhouse (W: 7m, L: 25m, H: 3.2m).

• Journal of Korean Society of Forest Science
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• v.90 no.3
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• pp.277-294
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• 2001

This study is aimed to analyze and to evaluate the technology development for sanddune fixation and sandy land conservation in China, resulting from the project of "Studies on the desertification combating and sand industry development". There are various types of sanddunes, including shrub-bunch type, dendritic, honey combed lattice, crescentic, parabolic, pyramid, complex and irregular types, domed, and so on. The height distribution ratios of these sanddunes are 13% of less than 5m, 17% of 6~10m, 18% of 11~25m, 14% of 26~50m, 28% of 51~100m, 10% of more than 100m, and so on. In dry land of China, shifting direction of the sanddune is mainly varying with main direction of wind, but types of shifting sanddunes have many differences in accordance with region, topography, size and shape of sanddunes. The main sanddune fixation technologies could be divided into the bio-ecological measures, physical measures and chemical measures. The bio-ecological measures include such vegetation measures as shrub-grasses measures, sandbreaks between sand dunes, sand fixation shelterblets and establishment of farmland shelterbelts, etc. The physical measures include establishment of high-sanddune stabilization walls and low-sanddune stabilization walls, sanddune fixation levees and coverage method with sediment clay, etc. The chemical measures include fixation-materials spraying and synthetical liquid spraying methods, etc. Besides, irrigation and sand settlement measures, shifting sand trapping channel, ditchsand fixation measures, etc. have been effectively applied.

• Applied Microscopy
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• v.38 no.4
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• pp.279-284
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• 2008

The phase change materials have been extensively used as an optical rewritable data storage media utilizing their phase change properties. Recently, the phase change materials have been spotlighted for the application of non-volatile memory device, such as the phase change random access memory. In this work, we have investigated the crystallization behavior and microstructure analysis of In-Sb-Te (IST) thin films deposited by RF magnetron sputtering. Transmission electron microscopy measurement was carried out after the annealing at $300^{\circ}C$, $350^{\circ}C$, $400^{\circ}C$ and $450^{\circ}C$ for 5 min. It was observed that InSb phases change into $In_3SbTe_2$ phases and InTe phases as the temperature increases. It was found that the thickness of thin films was decreased and the grain size was increased by the bright field transmission electron microscopy (BF TEM) images and the selected area electron diffraction (SAED) patterns. In a high resolution transmission electron microscopy (HRTEM) study, it shows that $350^{\circ}C$-annealed InSb phases have {111} facet because the surface energy of a {111} close-packed plane is the lowest in FCC crystals. When the film was heated up to $400^{\circ}C$, $In_3SbTe_2$ grains have coherent micro-twins with {111} mirror plane, and they are healed annealing at $450^{\circ}C$. From the HRTEM, InTe phase separation was occurred in this stage. It can be found that $In_3SbTe_2$ forms in the crystallization process as composition of the film near stoichiometric composition, while InTe phase separation may take place as the composition deviates from $In_3SbTe_2$.

• Solar Energy
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• v.20 no.2
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• pp.43-54
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• 2000

We prepared and characterized $Cu(In_{1-x}Ga_x)Se_2$(CIGS) films using a elemental co-evaporation method for absorbing layer of high efficiency thin film solar cells. The CIGS films deposited on a soda-lime glass exhibited low resistivity because of higher carrier concentration. Na was accumulated at the CIGS surface and the 0 and Se were also accumulated at the surface, suggesting that oxidation is a driving force of Na accumulation. The structure of CIGS film was modified or a secondary phase was formed in the Cu-poor CIGS bulk films probably due to the incorporation of Na into Cu vacancy sites. As the Ga/(In+Ga) ratio increased, the diffraction peaks of $Cu(In_{1-x}Ga_x)Se_2$ films were shifted to larger angle and splitted, and the grain size of $Cu_{0.91}(In_{1-x}Ga_x)Se_2$ films became smaller. All $Cu_{0.91}(In_{1-x}Ga_x)Se_2$ films showed the p-type conductivity regardless of the Ga/(In+Ga) ratio. Ag/n-ZnO/i-ZnO/CdS/$Cu_{0.91}(In_{0.7}Ga_{0.3})Se_2$/Mo solar cells were fabricated. The currently best efficiency in this study was 14.48% for $0.18cm^2$ area ($V_{oc}=581.5mV,\;J_{sc}=34.88mA$, F.F=0.714).