• Title/Summary/Keyword: 게이트 시뮬레이션 모델

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Electromagnetic Retarder's Modeling and Voltage Control (전자기형 리타더의 모델링 및 전압제어)

  • Jung, sung-chul;Lee, ik-sun;Ko, jong-sun
    • Proceedings of the KIPE Conference
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    • 2016.11a
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    • pp.171-173
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    • 2016
  • 일반적으로 대형 버스 및 트럭 등 같은 경우, 부하가 아주 크다. 또한 내리막길이나 장거리 운행 시에 잦은 제동으로 인하여 마찰을 이용한 기존 방식의 브레이크들은 브레이크 파열 및 페이드 현상 때문에 제동 안전성에 문제가 있다. 이러한 제동 부담을 분담하기 위해 현재 보조브레이크(리타더)가 필수적이며, 엔진 계통의 보조브레이크가 아닌 비접촉식 브레이크 같은 친환경 보조브레이크가 요구되고 있다. 그리고 차량 제동시 발생하는 기계에너지를 전기에너지로 회생하여 에너지효율을 향상시키려는 연구가 현재 활발히 진행되고 있다. 본 논문에서는 와전류를 이용한 전자기형 리타더에서 발생되는 전기에너지를 회수하기 위한 전압 제어 방법을 다룰 것이다. 리타더의 제동에너지를 전기에너지로 회생하기 위해 L-C 공진회로로 구성하였다. 리타더를 자여자 유도발전기(Self-Excited Induction Generator)로 모델링 하였고 이를 토대로 시뮬레이션 및 실험을 진행하였다. 자여자 유도발전기의 구동 조건에 대해서 언급하고 이를 파라미터에 따라 3-D map으로 만들었다. 또 회로 중의 FET 게이트에 전압을 인가하는 제어장치의 구동펄스에 따라 바뀌는 공진회로의 전압을 분석하였으며, 이 전압을 제어하기 위하여 PI 제어기를 이용한 알고리즘을 제안하였다. 이 전압을 3상 AC/DC컨버터를 통과한 후 DC/DC컨버터를 통하여 차량 내부의 배터리에 충전되는데 제어를 위해 3상 AC/DC에서의 전압 리플을 MA(Moving Average) 방식의 필터를 사용하여 DC/DC컨버터의 입력에 맞도록 제어하였다. 이와 같이 전자기형 리타더에서 유도되는 전압을 제어기의 제어 펄스에 따라 제어할 수 있으며 Matlab Simulink를 이용하여 리타더의 모델과 그 제어기의 타당성을 보였다. 또 실제 M-G Set 실험을 통하여 그 연관성을 확인하였다.

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Two-Dimensional Numerical Simulation of GaAs MESFET Using Control Volume Formulation Method (Control Volume Formulation Method를 사용한 GaAs MESFET의 2차원 수치해석)

  • Son, Sang-Hee;Park, Kwang-Mean;Park, Hyung-Moo;Kim, Han-Gu;Kim, Hyeong-Rae;Park, Jang-Woo;Kwack, Kae-Dal
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.26 no.1
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    • pp.48-61
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    • 1989
  • In this paper, two-dimensional numerical simulation of GaAs MESFFT with 0.7${\mu}m$ gate length is perfomed. Drift-diffusion model which consider that mobility is a function of local electric field, is used. As a discretization method, instead of FDM (finite difference method) and FEM (finite element method), the Control-Volume Formulation (CVF) is used and as a numerical scheme current hybrid scheme or upwind scheme is replaced by power-law scheme which is very approximate to exponential scheme. In the process of numerical analysis, Peclet number which represents the velocity ratio of drift and diffusion, is introduced. And using this concept a current equation which consider numerical scheme at the interface of control volume, is proposed. The I-V characteristics using the model and numerical method has a good agreement with that of previous paper by others. Therefore, it is confined that it may be useful as a simulator for GaAs MESFET. Besides I-V characteristics, the mechanism of both velocity saturation in drift-diffusion model is described from the view of velocity and electric field distribution at the bottom of the channel. In addition, the relationship between the mechanism and position of dipole and drain current, are described.

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A Study on the Breakdown in MHEMTs with InAlAs/InGaAs Heterostructure Grown on the GaAs substrate (InAlAs/InGaAs/GaAs MHEMT 소자의 항복 특성에 관한 연구)

  • Son, Myung-Sik
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.48 no.11
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    • pp.1-8
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    • 2011
  • One of the most important parameters that limit maximum output power of transistor is breakdown. InAlAs/InGaAs/GaAs Metamorphic HEMTs (MHEMTs) have some advantages, especially for cost, compared with InP-based ones. However, GaAs-based MHEMTs and InP-based HEMTs are limited by lower breakdown voltage for output power even though they have good microwave and millimeter-wave frequency performance with lower minimum noise figure. In this paper, InAlAs/$In_xGa_{1-x}As$/GaAs MHEMTs are simulated and analyzed for breakdown. The parameters affecting breakdown are investigated in the fabricated 0.1-${\mu}m$ ${\Gamma}$-gate MHEMT device having the modulation-doped $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As$ heterostructure on the GaAs wafer using the hydrodynamic transport model of a 2D commercial device simulator. The impact ionization and gate field effect in the fabricated device including deep-level traps are analyzed for breakdown. In addition, Indium mole-fraction-dependent impact ionization rates are proposed empirically for $In_{0.52}Al_{0.48}As/In_xGa_{1-x}As$/GaAs MHEMTs.

A Mesh Router Placement Scheme for Minimizing Interference in Indoor Wireless Mesh Networks (실내 무선 메쉬 네트워크에서의 간섭 최소화를 위한 메쉬 라우터 배치 기법)

  • Lee, Sang-Hwan
    • Journal of KIISE:Computing Practices and Letters
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    • v.16 no.4
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    • pp.421-426
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    • 2010
  • Due to the ease of deployment and the extended coverage, wireless mesh networks (WMNs) are gaining popularity and research focus. For example, the routing protocols that enhance the throughput on the WMNs and the link quality measurement schemes are among the popular research topics. However, most of these works assume that the locations of the mesh routers are predetermined. Since the operators in an Indoor mesh network can determine the locations of the mesh routers by themselves, it is essential to the WMN performance for the mesh routers to be initially placed by considering the performance issues. In this paper, we propose a mesh router placement scheme based on genetic algorithms by considering the characteristics of WMNs such as interference and topology. There have been many related works that solve similar problems such as base station placement in cellular networks and gateway node selection in WMNs. However, none of them actually considers the interference to the mesh clients from non-associated mesh routers in determining the locations of the mesh routers. By simulations, we show that the proposed scheme improves the performance by 30-40% compared to the random selection scheme.

The Software Complexity Estimation Method in Algorithm Level by Analysis of Source code (소스코드의 분석을 통한 알고리즘 레벨에서의 소프트웨어 복잡도 측정 방법)

  • Lim, Woong;Nam, Jung-Hak;Sim, Dong-Gyu;Cho, Dae-Sung;Choi, Woong-Il
    • Journal of the Institute of Electronics Engineers of Korea SP
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    • v.47 no.5
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    • pp.153-164
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    • 2010
  • A program consumes energy by executing its instructions. The amount of cosumed power is mainly proportional to algorithm complexity and it can be calculated by using complexity information. Generally, the complexity of a S/W is estimated by the microprocessor simulator. But, the simulation takes long time why the simulator is a software modeled the hardware and it only provides the information about computational complexity quantitatively. In this paper, we propose a complexity estimation method of analysis of S/W on source code level and produce the complexity metric mathematically. The function-wise complexity metrics give the detailed information about the calculation-concentrated location in function. The performance of the proposed method is compared with the result of the gate-level microprocessor simulator 'SimpleScalar'. The used softwares for performance test are $4{\times}4$ integer transform, intra-prediction and motion estimation in the latest video codec, H.264/AVC. The number of executed instructions are used to estimate quantitatively and it appears about 11.6%, 9.6% and 3.5% of error respectively in contradistinction to the result of SimpleScalar.

Design and Implementation of the Channel Adaptive Broadband MODEM (채널 적응형 광대역 모뎀 설계 및 구현)

  • Chang, Dae-Ig;Kim, Nae-Soo
    • The KIPS Transactions:PartC
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    • v.11C no.1
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    • pp.141-148
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    • 2004
  • Recently, the demand of broadband communications such as high-speed internet, HDTV, 3D-HDTV and ATM backbone network has been increased drastically. For transmitting the broad-bandwidth data using wireless network, it is needed to use ka-band frequency. However, the use of this ka-band frequency is seriously affected to the received data performance by rain fading and atmospheric propagation loss at the Ka-band satellite communication link. So, we need adaptive MODEM to endure the degraded performance by channel environment. In this paper, we will present the structure and design of the 155Mbps adaptive Modem adaptively compensated against channel environment. In order to compensate the rain attenuation over the ka-band wireless channel link, the adaptive coding schemes with variable coding rates and the multiple modulation schemes such as trellis coded 8-PSK, QPSK, and BPSK are adopted. And the blind demodulation scheme is proposed to demodulate without Information of modulation mode at the multi-mode demodulator, and the fast phase ambiguity resolving scheme is proposed. The design and simulation results of adaptive Modem by SPW model are provided. This 155Mbps adaptive MODEM was designed and implemented by single ASIC chip with the $0.25\mu{m}$ CMOS standard cell technology and 950 thousand gates.