• Journal of Advanced Navigation Technology
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• v.13 no.3
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• pp.358-364
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• 2009

This paper shows some variable bias techniques which can improve the power added efficiency(PAE) for the designed power amplifier. Some simulations have been done to get the effect of the bias change, and variable bias is adopted to get the higher efficiency for dual mode amplifier which generates two different output power levels. With drain bias change and a fixed gate bias, the amplifier shows PAE improvement compared to the fixed bias amplifier. In addition, this paper analyzed nonlinear distortion of the power amplifier and has used the digital predistortion which can result in 10dB ACPR improvement for the dual band amplifier.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.126-126
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• 2011

삼차원 구조의 낸드 플래시 메모리 소자는 기존 이차원 구조의 메모리 소자를 비례 축소할 때 발생하는 단채널 효과와 간섭효과를 최소화 하면서 집적도를 높일 수 있는 장점 때문에 많은 연구가 진행되고 있다. 그러나, 삼차원 구조의 낸드 플래시 메모리 소자는 공정 과정이 복잡하고 주변 회로 연결이 어려울 뿐만 아니라 금속 접촉에 필요한 면적이 넓은 단점을 가지고 있다. 이러한 문제점을 해결하기 위해 Vertical-Stacked-Array-Transistor (VSAT) 구조를 갖는 플래시 메모리 소자가 제안되었으나, VSAT 구조 역시 드레인 전류량이 적고 program과 erase 동작 시게이트 양쪽의 전하 트랩층에 전자와 정공을 비효율적으로 포획해야 하는 문제점을 가진다. 본 연구에서는 기존의 VSAT 구조의 문제점을 개선하면서 집적도를 증가한 삼차원 구조의 고집적낸드 플래시 메모리 소자를 제안하였다. 본 연구에서 제안한 플래시 메모리 소자의 구조는 기존 VSAT 구조에서 수직 방향의 두 string 사이에 존재하는 polysilicon을 제거하고 두 string 사이에 절연막을 증착하였다. 삼차원 시뮬레이션 툴인 Sentaurus를 사용하여 이 소자의 동작특성을 시뮬레이션 하였다. 소스와 드레인 사이의 유효 채널 길이가 감소하였기 때문에 기존의 VSAT 구조를 갖는 메모리 소자에 비해 turn-on 상태의 드레인 전류가 증가하였다. 제안한 플래시 메모리 소자의 subthreshold swing (SS)가 기존의 VSAT 구조를 갖는 메모리 소자의 SS 에 비해 낮아, 소자의 스위칭 특성이 향상하였다. 프로그램 전후의 문턱전압의 변화량이 기존의 VSAT 구조를 갖는 메모리 소자에 비해 크기 때문에 멀티 레벨 동작이 가능하다는 것을 확인하였다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.10
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• pp.17-22
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• 2004

We developed a new ANGLED display driving method which used both amplitude and pulse width modulation. For pulse width modulation, we divided a picture frame time into S sub-frames. For amplitude modulation, we used three OLED luminance(or current) levels which were controlled by TFT's gate voltages. By combining these two modulation methods, we obtained 35(=243) grey levels. And we designed a new data electrode driving circuit block with two shift registers without using DAC's. To verify the feasibility, we simulated the key circuit components by HSpice with TFT parameters extracted from current-voltage characteristics of 6${\mu}{\textrm}{m}$ channel length polysilicon TFT's. From the simulation results, we found that 320${\times}$240, dual scan, 243 grey level AMOLED display can be designed with this method.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2017.05a
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• pp.200-201
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• 2017

This paper introduces the SPICE simulation results of 3D sequential inverter considering electrical coupling. TCAD data and the SPICE data are compared to verify that the electrical coupling is well considered by using BSIM-IMG for the upper NMOS and LETI-UTSOI model for the lower PMOS. When inter layer dielectric is small, it is confirmed that electrical coupling is well reflected in the top transistor $I_{ds}-V_{gs}$ characteristics according to the change of the bottom transistor gate voltage.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.6 no.1
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• pp.109-114
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• 2002

In this paper, we have presented the simulation results ah)ut threshold voltage for Si-based MOSFETs with channel length of nano scale. We simulated the Si-based n channel MOSFETs with gate lengths from 180 to 30 nm in accordance to the constant voltage scaling theory and the lateral scaling. These MOSFETs had the lightly doped drain(LDD) structure, which is used for the reduction of electric field magnitude and short channel effects at the drain region. The stronger electric field at this region is due to scaling down. We investigated and analyzed the threshold voltage of these devices. This analysis will provide insight into some applicable limitations at the ICs and used for basis data at VLSI.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.12
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• pp.31-36
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• 2007

This paper presents a novel statistical characterization for accurate timing analysis in Partially-Depleted Silicon-On-Insulator (PD-SOI) circuits in BSIMSOI3.2 100nm technology. The proposed timing estimate algorithm is implemented in Matlab, Hspice, and C, and it is applied to ISCAS85 benchmarks. The results show that the error is within 5% compared with Monte Carlo simulation results.

• Convergence Security Journal
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• v.4 no.2
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• pp.53-60
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• 2004

We describe CHAP authentication for roaming service method of visited ISP subscriber on GPRS network. We also illustrate how visited mobile ISP subscriber can access ISP server and authenticate RADIUS in home network via Gateway GPRS Support Node (GGSN) on GPRS/UMTS network for wireless internet service and roaming. For this we propose the modified CHAP message format, PCO Message format at MT, and interworking message and format between GGSN and RADIUS in home ISP network for wireless internet service of mobile ISP subscriber at GPRS network in this paper. We also show authentication results when visited mobile ISP subscriber via CHAP at GPRS network accesses the RADIUS server in home ISP network.

• The Transactions of the Korea Information Processing Society
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• v.4 no.1
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• pp.298-310
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• 1997

Most of the available delay fault simulators for scan environments rely on the use of enhanced scan flip-flops and exclusively consider circuits composed of only discrete gates. In this research, a new path delay fault simulation algorithm using new logic values is devised to enlarge the scope to the VLSI circuits which consist of CMOS elements. Based on the proposed algorithm, a high speed path delay fault simulator for standard scan environments is developed. The experimental results show the new simulator is efficient and accurate.

• The Journal of the Acoustical Society of Korea
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• v.18 no.1
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• pp.92-96
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• 1999

As CMOS technologies have been rapidly developed, bridging faults have been relatively increased. IDDQ testing is a current testing methodology which can enhance reliability of the circuit since it efficiently detects bridging faults that are difficult to detect by functional testing. In this paper we consider internal bridging faults occurred in each gate of logic circuits under test and finally develop a fault simulator for IDDQ testing to detect assumed bridging faults.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1017_1018
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• 2009

LLC 하프브리지 공진형 컨버터는 일반적으로 게이트 구동드라이버, 구형파 발생부, 공진회로 및 정류회로로 구성되어 있다. 구형 파발생기는 두 개의 스위치 소자가 각각 50%의 주기와 약간의 데드타임을 가지고 반복하여 동작함으로써 구형파 전압을 발생하며, 공진회로에 구형파 전압이 인가되어도 높은 차수의 고주파 전류를 필터링하여 기본적으로 정현파 전류만 흐르도록 한다. 본 연구에서는 LLC 컨버터를 이용하여 LED를 구동을 하였고 시뮬레이션 결과를 실제 실험을 통해서 비교하였다.