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김수석;원충연;최대규;최상돈
- The Transactions of the Korean Institute of Power Electronics
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- v.6 no.5
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- pp.394-399
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- 2001
In this Paper, the development of the power supply for dry scrubber is discussed. 1500w, 100kHz power supply Is designed and tested. The main power stage is used for the FB PWM inverter with an LC filter in the secondary circuit. The operation characteristics of power supply are verified by simulation and experimental results.
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송준엽;강재훈;이승우;이화조
- Proceedings of the Korean Society of Precision Engineering Conference
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- 2002.05a
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- pp.415-419
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- 2002
In this study, we suggest a environmentally-conscious and dry cleaning process mechanism for the recycling of end-of-life CRT, and also develope a protype cleaning system to verify the faulty of the designed mechanism. This system accommodates the specifications of 14 ~ 32" end-of-life CRT. In experimental result, it is expected that the developed system improve the productivity up to 10% and decrease the loss rate of cleaning glass 3~4 times rather than the existing methods.hods.
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최진식;고용득;구경완;김성일;천희곤
- Electrical & Electronic Materials
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- v.10 no.1
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- pp.8-14
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- 1997
The UV/O$_{3}$ dry cleaning has been well known in removing organic molecules. The UV/O$_{3}$ dry cleaning method was performed to clean the Si wafer surfaces and contact holes contaminated by organic molecules such as residual PR. During the cleaning process, the Si surfaces were analyzed with X-ray photoelectron spectroscopy (XPS), atomic force microscope (AFM) and ellipsometer. When the UV/O$_{3}$ dry cleaning at 200'C was performed for 3 minutes, the residual photoresist was almost removed on Si wafer surfaces, but Si surfaces were oxidized. For UV/O$_{3}$ application of contact hole cleaning, the contact string were formed using the equipment of ISRC (Inter-university Semiconductor Research Center). Before Al deposition, UV/O$_{3}$ (at 200.deg. C) dry cleaning was performed for 3 minutes. After metal annealing, the specific contact resistivity was measured. Because UV/O$_{3}$ dry cleaning removed organic contaminants in contact holes, the specific contact resistivity decreased. Each contact hole size was different, but the specific contact resistivities were all much the same. Thus, it is expected that the UV/O$_{3}$ dry cleaning method will be useful method of removal of the organic contaminants at smaller contact hole cleaning.
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