• Journal of the Korean Vacuum Society
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• v.21 no.5
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• pp.264-272
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• 2012

In this paper, we report THz generation and detection characteristics investigated by InGaAs semiconductor epilayers, as results of a basic study obtained from the InGaAs-based THz transmitter/receiver (Tx/Rx). High-temperature and low-temperature (LT) grown InGaAs epilayers were prepared by the molecular beam epitaxy technique for the characterization of THz generation and detection, respectively, and the surface emission based on the photo-Dember effect was tried for THz generation. THz wave was generated by irradiation of a Ti:Sapphire fs pulse laser (60 ps/83 MHz), and a LT-GaAs Rx was used for the THz detection. The frequency band shown in the spectral amplitudes Fourier-transformed from the measured current signals was ranging in 0.5~2 THz, and the signal currents were exponentially increased with the Tx beam power. The THz detection characteristics of LT-InGaAs were investigated by using an Rx with dipole (5/20 ${\mu}m$) antenna, and the cutoff frequency was ~2 THz.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2004.11a
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• pp.325-328
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• 2004

본 논문은 다목적실용위성 2호기의 개발에 사용한 태양전지 어레이의 설계결과를 요약하였다. 최적의 태양전지 어레이의 개발을 위하여 고효율의 갈륨-아세나이드 태양전지를 사용하였다. 태양전지를 장착하기 위한 패널은 알루미늄 허니컴이 적용되는 샌드위치 구조에 섬유강화 복합재료를 면재로 사용하였다. 다목적실용위성 2호기의 임무말기 태양전지 어레이는 최소 1,073 watts 이상의 전력을 위성부하와 탑재체에 충분히 공급할 수 있도록 개발하고 있다.