• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.143-143
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• 2007

Bi-Te계 화합물은 상온영역($250^{\circ}C$이하)에서 열전특성이 우수하여, 냉각용 및 발전용 열전소자 재료로 사용되고 있다. 앞선 연구에서 MA법에 의한 La이 치환된 Bi-Te 진공가압 소결체의 열전특성이 $Bi_2Te_3$와 비교하여 향상된 값을 나타내었다. 본 연구에서는 Bi와 Te을 각각 0.01wt%, 0.02wt% La으로 미량 치환하여 melting법으로 제조한 분말을 $420^{\circ}C$, 200MPa로 가압 소결하였다. 가압 소결체의 열전특성은 Seebeck계수, 전기전도도. 열전도도를 측정하여 성능지수를 계산하였고 Bi-Te, (Bi-La)-Te, Bi-(Te-La)의 열전특성을 비교 분석하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.199-199
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• 2007

Bi-Te계 화합물은 상온영역 ($250^{\circ}C$ 이하)에서 열전 특성이 우수하여, 냉각용 및 발전용 열전 소자 재료로 사용되고 있다. 앞선 연구에서 La이 치환된 Bi-Te 진공가압 소결체의 열전특성이 $Bi_2Te_3$와 비교하여 향상된 값을 나타내었다. 본 연구에서는 Bi와 Te을 각각 0.01wt% Ce으로 미량 치환하여 기계적 합금화법으로 제조한 분말을 $420^{\circ}C$, 200MPa로 진공가압 소결하였다. 진공가압 소결체의 열전특성은 Seebeck계수, 전기전도도. 열전도도를 측정하여 성능지수를 계산하였고 Bi-Te, (Bi-Ce)-Te, Bi-(Te-Ce)의 열전특성을 비교 분석하였다.

• Korean Journal of Materials Research
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• v.7 no.1
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• pp.40-49
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• 1997

$Bi_{2}(Te_{0.9}Se_{0.1})_{3}$ thermoelectric matcrials havc 11et:n fahricxted hy mechanical alloying and hot pressing methods. Microstructure and thermoelectric properties of the hot 11resseii $Bi_{2}(Te_{0.9}Se_{0.1})_{3}$ have been investigated Lvith variations of hot pressing temperature and dopmt atltiition Formation of $Bi_{2}(Te_{0.9}Se_{0.1})_{3}$ alloy powders was completed by mechanical alloying of the as-mixed Ri. Te, arid Sc grmules of ~3.6mm size for 3 hours at ball-to-material weight ratio of 5 : 1. Figure of merit of $Bi_{2}(Te_{0.9}Se_{0.1})_{3}$ was markedly incrcwieti hy hot pressing at temperatures above $450^{\circ}C$, and value of $1.9{\times}10^{-3}/K$ was obtained for the specimen hot pressed at $550^{\circ}C$. With addition of 0.015 wt% Ri as acceptor dopant, figure of merit ol $Bi_{2}(Te_{0.9}Se_{0.1})_{3}$ hot pressed $550^{\circ}C$$2.1{\times}10^{-3}/K$.

• Korean Journal of Materials Research
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• v.8 no.3
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• pp.245-251
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• 1998

Bi-doped n-type PbTe thermoeletric materials were fabricated by mechanical alloying and hot pressing. The intering characteristics and thermoelectric properties of the hot- pressed PbTe were characterized and compared with the properties of the specimens prepared by meltingigrinding method. The hot-pressed PbTe specimens fabricated by mechanical alloying exhibited more negative Seebeck coefficient, higher electrical resistivity and lower thermal conductivity. compared to ones prepared by meltingigrinding. The maximum figure-of-merit increased and the temperature for the maximum figure-of-merit shifted to lower temperature for the specimens fabricated by mechanical alloying. When hot pressed at $650^{\circ}C$, 0.3 wt% Bi-doped PbTe fabricated by mechanical alloying and meltingjgrinding exhibited maximum figure-of-merits of $1.33\times10^{-3}/K$ at $200^{\circ}C$ and $1.07\times10^{-3}/K$ at $400^{\circ}C$ respectively.

• Proceedings of the Materials Research Society of Korea Conference
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• 1992.05b
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• pp.98-99
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• 1992

• Composites Research
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• v.22 no.4
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• pp.50-53
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• 2009

This paper mainly describes the armor materials, especially the ceramic materials for the personal protection. In the ceramic armor materials, B4C ceramics and SiC ceramics are the most popular materials. The $B_4C$ ceramics which consists of 4 atoms of boron and I atom of carbon is very light and strong. It is usually used to personal protection armor and chair protection in the helicopter. This material must be sintered at very high temperature because it melts at $2400^{\circ}C$. In order to have a good armor property, it must have very high density which is achieved by hot press or subsidiary sintering aid methods such as reducing the particle size of raw materials or mixing the sintering agents to the raw materials.

• Korean Journal of Materials Research
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• v.8 no.11
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• pp.1055-1060
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• 1998

Thermoelectric properties of ($Pb_{1-x}Sn_x$)Te ($0\leq{x}\leq{0.4}$) alloys, fabricated by mechanical alloying and hot pressing, were investigated with variation of the SnTe content. For the hot-pressed PbTe and ($Pb_{0.9}Sn_{0.1}$)Te. transition from p-type to n-type occurred at $200^{\circ}C$ and $300^{\circ}C$, respectively. However, the specimens containing SnTe more than 0.2mole exhibited p-type conduction up to 450'C. In extrinsic conduction region, the Seebeck coefficient and electrical resistivity of the hot-pressed ($Pb_{1-x}Sn_x$)Te decreased with increasing the SnTe content. The temperature at which the hot-pressed (Pbl-,Sn,)Te exhibited a maximum figure-of-merit was shifted to higher temperature with increasing the SnTe content The hot-pressed (Pbo ,Sno dTe exhibited a maximum figure-of-merit of $0.68\times10_{-3}/K$ at $200^{\circ}C$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.4
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• pp.363-369
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• 1994

Bimuth telluride base thermoelectrics are prepared by AC current applied hot pressing method. It is possible to minimize the defects arising from the vaporization of Te, thanks to the very short processing time compared to the single crystal growing method. The optimum conditions for the AC applied hot pressing of 95 mol% $Bi_2Te_3-5 mol% Bi_2Se_3$ thermoelectrics are sintering at $400^{\circ}C$, for 2 minutes, under 1500 kgf/$\textrm{cm}^2$, with the particle size of $125 to 250 {\mu}m$, range of powder. The resultant Z value (figure of merit) was $2.2{\times}10^{-3}/K$.

• Journal of Powder Materials
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• v.3 no.1
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• pp.1-12
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• 1996

• Journal of the Microelectronics and Packaging Society
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• v.17 no.3
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• pp.51-57
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• 2010

Thermoelectric properties of the p-type $(Bi,Sb)_2Te_3$, hot-pressed with the $(Bi,Sb)_2Te_3$ powders fabricated by melting/grinding method, were characterized with variation of the hot-pressing conditions. Thermoelectric characteristics of the hot-pressed $(Bi,Sb)_2Te_3$ were also analyzed with addition of $ZrO_2$ as nano inclusions. With increasing the hotpressing temperature from $350^{\circ}C$ to $550^{\circ}C$, Seebeck coefficient and electrical resistivity decreased from 275 ${\mu}V$/K to 230 ${\mu}V$/K and 6.68 $m{\Omega}$-cm to 1.86 $m{\Omega}$-cm, respectively. The power factor decreased with addition of $ZrO_2$ nano powders more than 1 vol%, implying that the optimum amount of $ZrO_2$ nano inclusions to get a maximum power factor would be less than 1 vol%.