• The Transactions of the Korean Institute of Electrical Engineers B
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• v.51 no.6
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• pp.273-284
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• 2002

In this paper, computer simulations of the physical Phenomena occurring in the arc region before and after current zero were carried out to evaluate the dielectric recovery characteristics of two types of double-flow nozzles. A commercial CFD Program "PHOENICS" is used for the simulation and the user-coded subroutines to consider the arcing phenomena were added to this program by the authors. The computed results were verified by the comparison with the test results presented by the research group of BBC. In order to investigate the state of the arc region after current zero, the simulation was carried out with four steps. They are cold gas flow analysis, steady state arc simulation, transient arc simulation before current zero, transient hot gas flow simulation after current zero. The semi-experimental arc radiation model is adapted to consider the radiation energy transport and Prandtl′s mixing length model is employed as the turbulence model. The electric field and the magnetic field were calculated with the same grid structure used for the simulation of the flow field. The streamer criterion was introduced to evaluate the dielectric recovery characteristics after current zero. Compared with the results obtained by assuming the current zero state in the former studies, it has been found that the results obtained by considering the state before current zerowere more accurate.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.1
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• pp.143-150
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• 1997

The electrical properties of polysilicon thin films implanted with $B_2H_6$ diluted in $H_2$ as dopant source using ion mass doping technique and the effect of radiation damage on the dopant activation behavior were investigated. Comparing the SIMS profiles of boron in polysilicon films with that obtained from computer simulation using TRIM92 the most probable ion species were $B_2H_x\;^+$(x＝1, 2, 3‥‥) type molecular ions. As a result of the Implantation of energetic massive ions, a continuous amorphized layer was created in polysilicon films where the fraction of amorphized layer varied with doping time. This amorphization comes from the fact that mass separation of implanting species is not employed in this ion mass doping technique. In the dopant activation behavior, reverse annealing phenomenon appeared in the intermediate annealing temperature range for a severely damaged specimen. The experimental result showed that the off-state current of the p-channel polysilicon thin film transistor is dependent on the degree of radiation damage.

• 한국신재생에너지학회:학술대회논문집
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• 2005.06a
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• pp.378-383
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• 2005

This experimental study presents the results of the cooling performance test of a $CO_2$ heat pump system for fuel cell vehicles. The experimental facility provides the cool ing and heating environment for cabin and heat releasing component. The test loop is designed to target the cooling capacity of 5kW and its coefficient of performance (COP) of 2.2. The cooling performance of the heat pump system is strongly dependent on the refrigerant charge and the degree of superheat. We carried out basic experiments to obtain optimum refrigerant charge and the degree of superheat level at the internal heat exchanger outlet. The heat pump system for fuel cell vehicles is different from that of engine-driven vehicles, where the former has an electricity-driven compressor and the latter has the belt-driven (engine-driven) compressor. In the fuel cell vehicle, the compressor speed is an independent operating parameter and it is controlled to meet the cooling/heating loads. Experiments were carried out at cooling mode with respect to the compressor speed and the incoming outdoor air speed. The results obtained in this study can provide the fundamental cool ing performance data using the $CO_2$ heat pump system for fuel cell vehicles.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.9
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• pp.2127-2132
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• 2013

Graphene thin film was prepared on the copper foils by chemical deposition, and the characteristic of graphene depending on $H_2$ and CH4 gas flow rates was analyzed by the Raman spectra. The graphene formation was improved with increment of methan gas flow rates. The increment of hydrogen gas flow rate made high intensity of D($1350cm^{-1}$) and G($1580cm^{-1}$). The peak of D($1350cm^{-1}$) is related with the defects, and the 2D($2700cm^{-1}$) increased depending on the increment of amount of methan gas flow rate. The rate of G/2D indicates the quality of garphene to like a monolayer, and the small value of G/2D means better grapheme. The G/2D of graphene after annealed at $200^{\circ}C$ was 0.55 and improved the characteristic of graphene than the deposited-grapnene. Thin film transistor with graphene as an active channel was p-type semiconductor.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.38 no.4
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• pp.395-402
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• 2010

Baffle injectors are protruded into the combustion chamber and form an anti-pulsating baffle to prevent high-frequency combustion instabilities in transverse modes. Being exposed to a high heat-flux environment, the baffle injector has self-cooling passages through which kerosene is convected and heated. The baffle injector with 20 spiral cooling channels has been developed and successfully applied to 30 $ton_f$-class combustors without any performance loss due to an additional cooling. In this work, numerical analysis of conjugate heat transfer in baffle injectors with various cooling channel designs has been performed in order to reduce the fabrication cost which would be considerably increased for the 75 $ton_f$-class combustor. Prior to the application to a full-scale combustor, the thermal durability of the modified design has been verified through the subscale hot-firing tests.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.76-76
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• 2008

갈륨-질화물(GaN) 기반의 고속전자이동도 트랜지스터(high electron mobility transistor, HEMT)는 최근 마이크로파 또는 밀리미터파 등의 고주파 대역의 통신시스템에 널리 사용되는 전자소자이자, 차세대 고주파용 전력 소자로 각광받고 있다. AlGaN/GaN HEMT에서 AlGaN층과 GaN층의 이종접합 구조(heterostructure)는 두 물질 간의 큰 전도대의 불연속성으로 인해 발생하는 이차원 전자가스(two-dimensional electron gas, 2DEG) 채널을 이용하여 높은 전자이동도, 높은 항복전압 및 우수한 고출력 특성을 얻는 것이 가능하다. 그러나 이린 이론적인 우수한 특성에도 불구하고 실제 AlGaN/GaN HEMT 소자에서는 AlGaN 표면과 AlGaN과 GaN 층 사이 접합면, AlGaN과 GaN 벌크층에 존재하는 트랩의 영향으로 이론보다 낮은 DC 출력 특성을 갖는다. 본 논문에서는 표면, 접합면, 벌크 층에 존재하는 트랩들을 각각의 존재 유무에 따라 시뮬레이션 함으로써 각각의 트랩이 DC 특성에 미치는 영향에 대해서 알아본다. 또한 소스와 게이트, 드레인과 게이트간의 거리에 따라 표면 트랩에 따른 영향과 AlGaN층과 GaN 층의 두께를 변화시켜가면서 각 층의 두께에 따라 벌크 트랩이 DC 특성에 미치는 영향을 알아보았다. 본 논문에서 트랩에 따른 특성의 파악을 위해서 $ATLAS^{TM}$를 이용하여 전산모사 하였다.

• Journal of the Korean Society of Propulsion Engineers
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• v.14 no.5
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• pp.45-50
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• 2010

Thermal analyses have been performed to study the effect of location of fuel ring and thermal barrier coatings in regenerative cooling channels in a full-scale combustor. For the effective cooling, the fuel ring has better be installed near axial location of the low expansion ratio and low heat flux, and branching of cooling channels is preferable. Also, the radiative cooled nozzle extension is thought to be reasonable for the cooling of combustor walls. Among the possible coatings, $Y_2O_3$ stabilized $ZrO_2$ coating and Ni/Cr coating have been adopted. Compared with Ni/Cr coating which has high oxidation resistance, $Y_2O_3$ stabilized $ZrO_2$ coating, one of ceramic coatings is found to be much effective to sustain the thermal survivability of combustion walls.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.9
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• pp.1-5
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• 2011

In this paper, we investigated the characteristics of AlGaN/GaN HEMTs to optimize their DC and RF characteristics by using a two-dimensional device simulator. First, we analyzed the variation of the DC characteristics with respect to the variation of 2DEG concentrations when varying the Al mole fraction and the thickness of the AlGaN layer. Then, we examined the variation of the RF characteristics by varying the size and the location of the gate, source and drain electrodes. When the Al mole fraction increased from 0.2 to 0.45, both the transconductance and I-V characteristics increased. On the other hand, the I-V characteristics were improved but transconductance was decreased as the thickness of the AlGaN layer increased from 10nm to 50nm. In the RF characteristics, the gate length was found to be the most influential parameter, and the RF characteristics were improved when the gate length was shorten.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.39 no.6
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• pp.639-644
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• 2015

A cylindrical secondary Li-ion cell is a device in which stored chemical energy is converted to electrical energy via an electrochemical reaction. These cells are widely used for applications that require high capacity and rate power, such as notebooks, power tools, and electric vehicles. The role of a center pin is to retain the channel for gas release, preventing blockage of the hollow of the jelly roll during a charge-discharge cycle, and to prevent an internal short circuit for tearing of separator under mechanical free fall. In this paper, two experiments are conducted with and without the center pin to experimentally verify the importance of the role of the center pin. The first experiment is a 50-cycle charge-discharge cycle test, and the second is a free fall test conducted according to the Underwriters Laboratories (UL) standards. Based on these experiments, we demonstrate that the center pin in a cylindrical cell is a very important component in terms of safety.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.347.2-347.2
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• 2014

최근, 비정질 산화물 반도체 thin film transistor (TFT)는 수소화된 비정질 실리콘 TFT와 비교하여 높은 이동도와 큰 on/off 전류비, 낮은 구동 전압을 가짐으로써 빠른 속도가 요구되는 차세대 투명 디스플레이의 TFT로 많은 연구가 진행되고 있다. 한편, 기존의 Thin-Film-Transistor 제작 시 우수한 박막을 얻기 위해서는 $500^{\circ}C$ 이상의 높은 열처리 온도가 필수적이며 이는 유리 기판과 플라스틱 기판에 적용하는 것이 적합하지 않고 높은 온도에서 수 시간 동안 열처리를 수행해야 하므로 공정 시간 및 비용이 증가하게 된다는 단점이 있다. 이러한 점을 극복하기 위해 본 연구에서는 간단하고, 낮은 제조비용과 대면적의 박막 증착이 가능한 용액공정을 통하여 박막 트랜지스터를 제작하였으며 thermal 열처리와 microwave 열처리 방식에 따른 전기적 특성을 비교 및 분석하고 각 열처리 방식의 열처리 온도 및 조건을 최적화하였다. P-type bulk silicon 위에 산화막이 100 nm 형성된 기판에 spin coater을 이용하여 Al-Zn-Sn-O 박막을 형성하였다. 그리고, baking 과정으로 $180^{\circ}C$의 온도에서 10분 동안의 열처리를 실시하였다. 연속해서 Photolithography 공정과 BOE (30:1) 습식 식각 과정을 이용해 활성화 영역을 형성하여 소자를 제작하였다. 제작 된 소자는 Junctionless TFT 구조이며, 프로브 탐침을 증착 된 채널층 표면에 직접 접촉시켜 소스와 드레인 역할을 대체하여 동작시킬 수 있어 전기적 특성을 간단하고 간략화 된 공정과정으로 분석할 수 있는 장점이 있다. 열처리 조건으로는 thermal 열처리의 경우, furnace를 이용하여 $500^{\circ}C$에서 30분 동안 N2 가스 분위기에서 열처리를 실시하였고, microwave 열처리는 microwave 장비를 이용하여 각각 400 W, 600 W, 800 W, 1000 W로 15분 동안 실시하였다. 그 결과, furnace를 이용하여 열처리한 소자와 비교하여 microwave를 통해 열처리한 소자에서 subthreshold swing (SS), threshold voltage (Vth), mobility 등이 비슷한 특성을 내는 것을 확인하였다. 따라서, microwave 열처리 공정은 향후 저온 공정을 요구하는 MOSFET 제작 시의 훌륭한 대안으로 사용 될 것으로 기대된다.