• Korean Journal of Optics and Photonics
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• v.7 no.3
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• pp.238-243
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• 1996

We have developed XeCl laser pumped double-resonator Dye laser and two-stage amplifier system, and generated simultaneously of alternatively two wavelengths suitable in DIAL system. The developed double-resonator is composed of 1st and 2nd diffraction orders on light incidence angle in grazing-incidence grating method with 1200 g/mm. We have obtained spectral linewidth below 10 pm and the total efficiency dependent on pump energy over 6%. The tuning ranges dependent on 1st and 2nd diffraction orders are 434~470 nm and 436~468 nm, respectively. The amplification gain and rine-450 dye laser by using the double-resonator laser system and measured the distribution of $NO_2$ concentration over Suwon as the result of transmission of laser output of 6 mJ in this DIAL system. Consequently, we have confirmed that the developed dye laser system is very useful as the tunable source for DIAL.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.4
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• pp.443-451
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• 2010

This paper describes a fully integrated CMOS low-IF mobile-TV RF tuner for Band-III T-DMB/DAB applications. All functional blocks such as low noise amplifier, mixers, variable gain amplifiers, channel filter, phase locked loop, voltage controlled oscillator and PLL loop filter are integrated. The gain of LNA can be controlled from -10 dB to +15 dB with 4-step resolutions. This provides a high signal-to-noise ratio and high linearity performance at a certain power level of RF input because LNA has a small gain variance. For further improving the linearity and noise performance we have proposed the RF VGA exploiting Schmoock's technique and the mixer with current bleeding, which injects directly the charges to the transconductance stage. The chip is fabricated in a 0.18 um mixed signal CMOS process. The measured gain range of the receiver is -25~+88 dB, the overall noise figure(NF) is 4.02~5.13 dB over the whole T-DMB band of 174~240 MHz, and the measured IIP3 is +2.3 dBm at low gain mode. The tuner rejects the image signal over maximum 63.4 dB. The power consumption is 54 mW at 1.8 V supply voltage. The chip area is $3.0{\times}2.5mm^2$.

• Korean Journal of Optics and Photonics
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• v.17 no.6
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• pp.556-563
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• 2006

We present a comprehensive study of a chirped pulse Ti:sapphire regenerative amplifier system operating at 1 kHz. Main constituents of the system are described in detail. The amplifier stage was first converted to a repetition rate-tunable kHz gain-switched nanosecond Ti:sapphire laser. Operation characteristics at different repetition rates such as build-up times of laser pulses, pump power-dependent output powers and pulse durations, damage thresholds, and tunability ranges were studied. Based on the results achieved, the switching time of the Pocket's cell used and the round trip numbers in the regenerative amplifier were optimized at 1 kHz. The output pulses with a pulse width of 50fs from a home-made Ken lens mode-locked Ti:sapphire oscillator were used as seed pulses. The pulses were expanded to 120ps in a grating stretcher prior to coupling into the 3-mirror amplifier cavity. After amplification and recompression, a stable 1kHz Ti:sapphire regenerative amplifier system, which delivers 85-fs, $320-{\mu}J$ pulses, was fully constructed.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.9
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• pp.1079-1086
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• 2012

In this paper, X-band 60 W Solid-State Power Amplifier with sequential control circuit and pulse width variation circuit for improve bias of SSPA module was designed. The sequential control circuit operate in regular sequence drain bias switching of GaAs FET. The distortion and efficiency of output signals due to SSPA nonlinear degradation is increased by making operate in regular sequence the drain bias wider than that of RF input signals pulse width if only input signal using pulsed width variation. The GaAs FETs are used for the 60 W SSPA module which is consists of 3-stage modules, pre-amplifier stage, driver-amplifier stage and main-power amplifier stage. The main power amplifier stage is implemented with the power combiner, as a balanced amplifier structure, to obtain the power greater than 60 W. The designed SSPA modules has 50 dB gain, pulse period 1 msec, pulse width 100 us, 10 % duty cycle and 60 watts output power in the frequency range of 9.2~9.6 GHz and it can be applied to solid-state pulse compression radar using pulse SSPA.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.41 no.11
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• pp.1566-1573
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• 2016

This paper presents a beam-forming receiver with polyphase In-phase/Quadrature-phase (I/Q) network for airborne communication. In beam-forming receiver, the insertion loss (IL) difference between input path increases the receiver noise figure (NF). The major element for generating IL difference is the impedance variation of phase shifter. In order to maintain a constant IL in every phase, this paper propose a lossless polyphase I/Q network based beam-forming receiver. The proposed lossless polyphase I/Q network has low Q-factor and high impedance for drive back-end VGA (Variable gain amplifier) block with low insertion loss. The 2-stage VGA controls in-phase and quadrature-phase amplitude level for vector summation. The proposed beam-forming receiver prototype is fabricated in TSMC $0.18{\mu}m$ CMOS process. The prototype cover the $360^{\circ}$ with $5.6^{\circ}$ LSB. The average RMS phase error and amplitude error is approximately $1.6^{\circ}$ and 0.3dB.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.1 s.104
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• pp.45-51
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• 2006

In this paper, a new predistortion linearizer for controlling the amplitude of low frequency intermodulation distortion signals is proposed. The low frequency intermodulation distortion(IMD) components are generated by harmonic generator. A vector modulator, modulate fundamental signal with low frequency IMD signals, generates predistortion IMD signals and controls amplitude and phase of them with modulation factors. As a result, this predistorter is suppressed IMD signals of power amplifier effectively. The predistortion linearizer has been manufactured to operate in cellular base-station transmitting band($869{\sim}894\;MHz$). The experimental results show that IMD3 of power amplifier are improved more than 20 dB for CW two-tone signals. Also, it's improved the adjacent channel power ratio(ACPR) more than 10 dB for IS-95 CDMA IFA signals.

• Journal of IKEEE
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• v.24 no.3
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• pp.719-726
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• 2020

A threshold-voltage sensing circuit is proposed to compensate for pixel aging in active matrix organic light-emitting diodes. The proposed threshold-voltage sensing circuit consists of sample-hold (S/H) circuits and a single-ended successive approximation register (SAR) analog-to-digital converter (ADC) with a resolution of 10 bits. To remove a scale down converter of each S/H circuit and a voltage gain amplifier with a signl-to-differentail converter, the middle reference voltage calibration and input range calibration for the single-ended SAR ADC are performed in the capacitor digital-to-analog converter and reference driver. The proposed threshold-voltage sensing circuit is designed by using a 180-nm CMOS process with a supply voltage of 1.8 V. The ENOB and power consimption of the single-ended SAR ADC are 9.425 bit and 2.83 mW, respectively.

• Journal of Biomedical Engineering Research
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• v.22 no.6
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• pp.503-510
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• 2001

In this paper. we describe a 32-channel bioimpedance measurement system It consists of 32 independent constant current sources of 50 kHz sinusoid. The amplitude of each current source can be adjusted using a 12-bit MDAC. After we applied a pattern of injection currents through 32 current injection electrodes. we measured induced boundary voltages using a variable-gain narrow-band instrumentation amplifier. a Phase-sensitive demodulator. and a 12-bit ADC. The system is interfaced to a PC for the control and data acquisition. We used the system to detect anomalies with different resistivity values in a saline Phantom with 290mm diameter The accuracy of the developed system was estimated as 2.42% and we found that anomalies larger than 8mm in diameter can be detected. We Plan to improve the accuracy by using a digital oscillator improved current sources by feedback control, Phase-sensitive A/D conversion. etc. to detect anomalies smaller than 1mm in diameter.

• Journal of IKEEE
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• v.22 no.2
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• pp.408-412
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• 2018

In this paper, a 26GHz variable gain amplifier fabricated using a 40nm CMOS process is studied. In the case of an automobile radar using 79 GHz, it is advantageous in designing and driving to drive down to a low frequency band or to use a low frequency band before up conversion rather than designing and matching the entire circuit to 79 GHz in terms of frequency characteristics. In the case of a Phased Array System that uses time delay through TTD (True Time Delay) in practice, down conversion to a lower frequency is advantageous in realizing a real time delay and reducing errors. For a VGA (Variable Gain Amplifier) operating in the 26GHz frequency band that is 1/3 of the frequency of 79GHz, VDD : 1V, Bias 0.95V, S11 is designed to be <-9.8dB (Mea. High gain mode) and S22 < (Mea. high gain mode), Gain: 2.69dB (Mea. high gain mode), and P1dB: -15 dBm (Mea. high gain mode). In low gain mode, S11 is <-3.3dB (Mea. Low gain mode), S22 <-8.6dB (Mea. low gain mode), Gain: 0dB (Mea. low gain mode), P1dB: -21dBm (Mea. Low gain mode).

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.49 no.2
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• pp.47-55
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• 2012

A discrete-time(DT) filter with high-order temporal moving average(TMA) using actively-weighted charge sampling is proposed in this paper. To obtain different weight of sampled charge, the variable transconductance OTA is used prior to charge sampler, and the ratio of charge can be effectively weighted by switching the control transistors in the OTA. As a result, high-order TMA operation can be possible by actively-weighted charge sampling. In addition, the transconductance generated by the OTA is relatively accurate and stable by using the size ratio of the control transistors. The high-order TMA filter has small size, increased voltage gain, and low parasitic effects due to the small amount of switches and sampling capacitors. It is implemented in the TSMC $0.18-{\mu}m$ CMOS process by TMA-$2^2$. The simulated voltage gain is about 16.7 dB, and P1dB and IIP3 are -32.5 dBm and -23.7 dBm, respectively. DC current consumption is about 9.7 mA.