• Journal of Korean Electronics
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• v.4 no.4
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• pp.41-65
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• 1984

• Journal of Korean Electronics
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• v.3 no.12
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• pp.77-82
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• 1983

• Proceedings of the KIPE Conference
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• 2016.07a
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• pp.287-288
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• 2016

기존 자가발전 운동기구의 경우, 가변저항을 사용하여 운동강도를 조절하기 때문에 Generator에서 생성된 에너지가 모두 소모되는 문제점이 있다. 또한 계통연계형 자가발전 운동기구의 경우에는 에너지 회수는 가능하지만 운동 강도 조절이 불가능한 단점이 존재한다. 따라서 본 논문에서는 계통연계를 통해 에너지 회수가 가능하고, 운동 강도 조절이 가능한 자가발전 운동기구용 DC/DC 컨버터를 제안한다. 제안회로는 가변저항을 사용하지 않고 입력임피던스를 통해 운동 강도를 조절하기 때문에 높은 에너지를 생성할 수 있고 계통연계를 통해 에너지 회수도 가능한 장점이 있다. 본 논문에서는 제안된 회로의 이론적 특성을 분석하고 모의실험을 통해 확인하였으며, 계통연계형 자가발전 운동기구에 적용하여 실험을 통해 우수성을 검증하였다.

• Proceedings of the Korea Information Processing Society Conference
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• 2023.11a
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• pp.1171-1172
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• 2023

자율주행 기술에서 스테레오 비전과 End-to-End Driving은 많이 사용되는 기술이며 본 연구에서는 이를 신호등 인식과 주행에 적용하였다. 신호등 인식은 좌우 카메라로부터 적색 원을 인식한 후 스테레오 비전을 통해 신호등과의 거리를 추정한다. 주행 시스템은 End-to-End Learning 기반으로 이루어지며, 출력값인 가변저항을 조향각으로 변환하여 제어할 수 있다. 또한 감마 보정을 통한 데이터 증강을 통해 빛에 대해 민감하지 않게 모델을 학습하였다. 추후 신호등 인식 시 HSV 필터가 빛에 민감한 점과 주행 시 가변저항 값이 일정하지 않은 점이 해결된다면 더욱 안정적인 시스템을 구축할 수 있을 것으로 기대된다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.401-401
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• 2011

태양전지 제작에 있어서 에미터층의 최적화를 위해 POCl 도핑시 에미터층의 면저항 가변에 중요한 파라미터인 온도와 가스비를 변화하여 실험을 진행하였다. 본 실험에 사용될 최초 기판은 두께가 200${\pm}$5 ${\mu}m$, 비저항이 0.5~0.3 ${\Omega}{\cdot}cm$의 P-type(100) 실리콘 기판을 사용하였으며 먼저 POCl3양과 deposition 시간 그리고 산소와 질소의 양을 고정시키고 온도에 따른 에미터 면저항 변화를 알아보았다. 온도는 830, 840, 850, 860, 870, 880$^{\circ}C$로 가변시켰으며 공정온도가 높아질수록 면저항 값이 낮아짐을 알 수 있었다. 균일도는 낮은 온도에서는 다소 좋지 않았지만 온도가 높아질수록 점차 좋아졌으며 870$^{\circ}C$ 이상에서는 거의 균일한 값을 얻을 수 있었다. 한편, 이번에는 공정온도를 고정하고 산소와 POCl3 가스량의 변화에 따른 면저항 특성과 균일도를 알아보았다. 가스비와 압력 그리고 위치별 면저항 특성에 대해서 알아보았고 부분압이 증가함으로 반응로 내의 O2의 양이 증가함을 알 수 있었다. 증가한 O2는 도핑과정에서 산화막을 더 두껍게 형성하게 하며 높은 면저항 값을 가져오게 하였다. 즉, 충분한 가스량의 주입으로 도핑시 균일도를 향상시킬 수 있었다. 이와 같이 부분압이 증가함에 따라 면저항의 증가와 균일도의 향상을 가져왔다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.2
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• pp.379-385
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• 2017

In general, distribution board, panel board and motor control center can be installed over a wide area such as residence of group, building, schools, factories, ports, airports, water service and sewerage, substation and heavy industries that are used to supply converts the voltages extra high voltage into optimal voltage. There are electrical accidents due to rise of contact temperature, loose contact between busbar, deterioration of the contact resistance, over temperature of the busbars. In this paper, we designed and implemented the busbar joint and temperature measurement system, which can measure the joint resistance of busbar and loose connection between busbar using potentiometer and non-contact infrared sensor. The experimental results show that tightening the bolt and nut is fully engaged, resistance was decreased and maximum error range was 0.1mm. Also, the experimental result showed that the temperature at the contact area is increased from $27.3^{\circ}C$ to $69.3^{\circ}C$by the contact resistance.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.2
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• pp.1348-1354
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• 2015

In this paper, chaotic circuit of the voltage controlled Lorentz system for engineering applications has been designed and implemented in an electronic circuit. The proposed circuit consists of MOS variable resistor, multipliers, capacitors, fixed resistors and operational amplifiers. The circuit was analysed by PSPICE program. PSPICE simulation results show that chaotic dynamics of the circuit can be controlled by the MOS variable resistor through time series analysis, frequency analysis and phase diagrams. Also, we implemented the proposed circuit in an electronic hardware system with discrete elements. Measured results of the circuit showed controllability of the circuit using the MOS resistor.

• Journal of the Korean Institute of Telematics and Electronics
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• v.20 no.1
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• pp.50-54
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• 1983

Contact resistance variation which may be called sliding noise in carbon film variable resistors whose resistance elements consists of linear resistivity distribution were measured with several kinds of sliders and were analyzed to reduce the contact resistance variation. About the measuring method, the standard method of measuring contact resistance variation specified by the variable Resistance Components Institute was adupted. By analyzing the experimental results, it has been shown that the primary cause of contact resistance variation is due to current constriction and small discharge sparks in the resistance film in the area close to the slide contact. Moreover, it has been found that the sliding noise would be reduced by increasing the number of contact points, sliding speed, and pressure, and by using some kinds of insulation oil on the contacting surface. High contact resistance variation is likely to occur in the area of high resistance variation in a logrithmic resistance taper.

• Journal of IKEEE
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• v.7 no.1 s.12
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• pp.43-55
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• 2003

A degenerated differential pair has been widely used as a standard topology for digitally programmable CMOS VGAs. A variable degeneration resistor has been implemented using a resistor string or R-2R ladder with MOSFET switches. However, in the VGAs using these conventional methods, low-voltage and high-speed operation is very hard to achieve due to the dc voltage drop over the degeneration resistor. To overcome the problem a new variable degeneration resistor is proposed where the dc voltage drop is almost removed. The proposed gain control scheme makes it easy to implement a low-voltage and high-speed VGA. This paper describes the problems existed in conventional methods, the principle and advantages of the proposed scheme, and their performance comparison in detail. A CMOS VGA cell is designed using the proposed degeneration resistor. The 3dB bandwidths are greater than 650㎒ and the gain errors are less than 0.3dB in a gain control range from -12dB to +12dB in 6dB steps. It consumes 3.1㎃ from a 2.5V supply voltage.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.40 no.4
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• pp.275-281
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• 2003

A new neural oscillator has been designed and fabricated in an 0.5 ${\mu}{\textrm}{m}$ double poly CMOS technology. The proposed neural oscillator consists of a nonlinear variable resistor with negative resistance as well as simple transconductors and capacitors. The variable negative resistor which is used as a input stage of the oscillator consists of a positive feedback transconductors and a bump circuit with Gaussian-like I-V curve. The proposed neural oscillator has designed in integrated circuit with SPICE simulations. Simulations of a network of 4 oscillators which are connected with excitatory and inhibitory synapses demonstrate cooperative computation. Measurements of the fabricated oscillator chip with a $\pm$ 2.5 V power supply is shown and compared with the simulated results.