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Integrated Circuit Design and Implementation of a Novel CMOS Neural Oscillator using Variable Negative Resistor  

송한정 (충청대학교 전자공학과)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SC / v.40, no.4, 2003 , pp. 275-281 More about this Journal
Abstract
A new neural oscillator has been designed and fabricated in an 0.5 ${\mu}{\textrm}{m}$ double poly CMOS technology. The proposed neural oscillator consists of a nonlinear variable resistor with negative resistance as well as simple transconductors and capacitors. The variable negative resistor which is used as a input stage of the oscillator consists of a positive feedback transconductors and a bump circuit with Gaussian-like I-V curve. The proposed neural oscillator has designed in integrated circuit with SPICE simulations. Simulations of a network of 4 oscillators which are connected with excitatory and inhibitory synapses demonstrate cooperative computation. Measurements of the fabricated oscillator chip with a $\pm$ 2.5 V power supply is shown and compared with the simulated results.
Keywords
Negative Resistor; Neural Oscillator; CMOS; OTA; Integrated Circuit;
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Times Cited By KSCI : 1  (Citation Analysis)
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