• 제목/요약/키워드: {001} cleavage plane

검색결과 4건 처리시간 0.016초

전자회절도형을 이용한 장석의 구조 분석에 대한 고찰 (An Investigation on Structural Analysis of Feldspars by Electron Diffraction Patterns)

  • 김윤중;이영부;박병규;이정후
    • 한국광물학회지
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    • 제17권2호
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    • pp.177-187
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    • 2004
  • Au 내부 표준시편을 이용하여 일반 전자회절도형에서도 알바이트와 올리고클레이스의 격자 상수 값을 1% 이내의 오차범위로 얻었다. 자연산 올리고클레이스 시료의 전자회절도형 지도를 작성하였고, 11개 지점의 정대축 전자회절도형을 얻었다 이러한 작업은 삼사정계민 장석으로부터 신뢰성 있는 전자현미경 연구 결과를 얻기 위해서는 필수적인 과정이다. 장식의 {001} 벽개면과 TEM의 양측경사 시료지지대를 이용하면 장석의 구조/화학 분석에 필요한 다음과 같은 정보를 획득할 수 있다: 알칼리 장석은 [001] 방향에서 * 값을, [100] 방향에서 $\alpha$* 값을 측정하여 $\alpha$* - * plot을 함으로써 미세 영역에서 Si-Al ordering 상태 및 화학 조성을 예측할 수 있다. Na-rich한 사장석은 [001] 방향에서 * 값을 측정하여 Si-Al ordering 상태를 예측할 수 있다. Na-poor한 사장석은 [100] 방향에서 e-reflection의 유무, 회절강도 및 위치 변화를 측정하여 구조 및 화학을 예측할 수 있다.

$ZnWO_4$ 단결정 성장과 결함 (The Growth of Defects $ZnWO_4$ Single Crystals)

  • 조병곤;오근호
    • 한국세라믹학회지
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    • 제27권4호
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    • pp.447-456
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    • 1990
  • ZnWO4 single crystals were grown by Czochralski method. And the orientation of grown crystals were determined by Laue back reflection, and the crystals were siliced at (100), (010), (001) face before polishing. The morphologys and distribution of etch pits on each face were observed by optical microscopy. In the present study, we understood that dislocation distributjioon rely on shape of solid-liquid interface, and secondary phase acts on the dislocation source. We also observed dislocation trace(etch pits) of (100) slip plane on (010) cleavage plane.

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Growth parameters and formation of slip plane in ZnWO4 single crystals by the Czochralski method

  • Lim, Chang-Sung
    • 한국결정성장학회지
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    • 제20권5호
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    • pp.202-206
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    • 2010
  • Single crystals of $ZnWO_4$ were grown successfully in the [100], [010] and [001] directions using the Czochralski method. The growth parameters and the formation of slip plane in $ZnWO_4$ crystals were studied. $ZnWO_4$ crystals had a cleavage plane of (010). The dislocation density on the (010) plane at the center of the crystal was lower than that of the edge region. It was inferred that the high density at the edge of the crystals was caused by the thermal gradient during crystal growth. The etch pit arrangement revealed the (100) slip plane to be most active during crystal growth.

$ZnWO_4$ 단결정 성장 ($ZnWO_4$ Single Crystal Growth)

  • 임창성;오권한
    • 한국세라믹학회지
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    • 제23권4호
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    • pp.69-77
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    • 1986
  • Single crystals of zinc tungstates were grown by the Czochralski method. To obtain the seed crystals various methods were employed including 4 points platinum wirse which dipped the melt and the capillary action from the melt led the 3 differently oriented seeds such as [100], [010] and [001] directions. Optimum growing conditions were observed as neck diameter 2mm rotation speed 50-60 rpm maximum diameter 15mm and pulling rate 0-10 mm/hr. Dendrites covered on the olidified surface in a platinum crucible were turned out to be [001] direction because obviously this crystal has the strong [001] preferential growth habit. The (100) and (010) planes of single crystals showed the slip planes and the (010) plane showed the perfect cleavage surface.

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