• Journal of the Mineralogical Society of Korea
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• v.17 no.2
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• pp.177-187
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• 2004

Measurements of the lattice parameters of albite and oligoclase from electron diffraction patterns with the Au internal standard resulted in errors of less than 1 %. An electron diffraction map for natural oligoclase samples was constructed and 11 stations of zone-axes diffraction patterns were obtained. This process is indispensible for reliable TEM studies of triclinic feldspars. Utilizing the [001] cleavage plane of feldspar and the double-tilting TEM holder the following information is obtainable: Si-Al ordering and chemistry of alkali feldspars could be estimated from the $\alpha$＊ - ＊ plot, where ＊ is measured from the [001] orientation, while $\alpha$＊ is measured from the [100] orientation. Si-Al ordering of Na-rich plagioclase could be estimated from ＊ [001] patterns. Structure and chemistry or Na-poor plagioclase could be estimated from existence of e-reflections, their intensity variations as well as their positional changes.

• Journal of the Korean Ceramic Society
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• v.27 no.4
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• pp.447-456
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• 1990

ZnWO4 single crystals were grown by Czochralski method. And the orientation of grown crystals were determined by Laue back reflection, and the crystals were siliced at (100), (010), (001) face before polishing. The morphologys and distribution of etch pits on each face were observed by optical microscopy. In the present study, we understood that dislocation distributjioon rely on shape of solid-liquid interface, and secondary phase acts on the dislocation source. We also observed dislocation trace(etch pits) of (100) slip plane on (010) cleavage plane.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.5
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• pp.202-206
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• 2010

Single crystals of $ZnWO_4$ were grown successfully in the [100], [010] and [001] directions using the Czochralski method. The growth parameters and the formation of slip plane in $ZnWO_4$ crystals were studied. $ZnWO_4$ crystals had a cleavage plane of (010). The dislocation density on the (010) plane at the center of the crystal was lower than that of the edge region. It was inferred that the high density at the edge of the crystals was caused by the thermal gradient during crystal growth. The etch pit arrangement revealed the (100) slip plane to be most active during crystal growth.

• Journal of the Korean Ceramic Society
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• v.23 no.4
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• pp.69-77
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• 1986

Single crystals of zinc tungstates were grown by the Czochralski method. To obtain the seed crystals various methods were employed including 4 points platinum wirse which dipped the melt and the capillary action from the melt led the 3 differently oriented seeds such as [100], [010] and [001] directions. Optimum growing conditions were observed as neck diameter 2mm rotation speed 50-60 rpm maximum diameter 15mm and pulling rate 0-10 mm/hr. Dendrites covered on the olidified surface in a platinum crucible were turned out to be [001] direction because obviously this crystal has the strong [001] preferential growth habit. The (100) and (010) planes of single crystals showed the slip planes and the (010) plane showed the perfect cleavage surface.