• Electrical & Electronic Materials
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• v.8 no.5
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• pp.594-600
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• 1995

Dielectric properties at microwave frequencies of ($Zr_{0.65}$, $Sn_{0.35}$) $Ti_{1.04}$ $O_{4.04}$ ceramics with additives, NiO as an agent to improve dielectric properties and $B_{2}$ $O_{3}$ as a firing agent were investigated. When 0.5 - 1.5 wt% of NiO is add, the grain growth is inhibited and the shape of the grain is uniformed, Dielectric constant(Fr) and bulk density are increased with raising amount of NiO at sintering temperature of 1330 - 1360.deg. C, but the temperature coefficient of resonant frquency(.epsilon.$_{r}$) decreased gradually as the NiO content increased. The value of Qx $f_{o}$ was increased as the amount of NiO was increased in the range of 0.5 to 1.0 wt% and the Qx $f_{o}$, was decreased slightly with raising sintering temperature. With NiO of 1.0 wt% and at sintering temperature of 1360.deg. C, this ceramics was found to have excellent microwave properties of .epsilon.$_{r}$=37.8, Qx $f_{o}$ = 48.600 and .tau.$_{f}$ = 7 ppm/.deg. C.C.. C.. C.C.. C.. C.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.7
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• pp.572-577
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• 2001

The electrical properties of Pr$_{6}$ O$_{11}$ -based ZnO varistors consisting of ZnO-Pr$_{6}$ O$_{11}$ -CoO-Cr$_2$O$_3$-Er$_2$O$_3$ ceramics were investigated with sintering temperature in the range of 1325~f1345$^{\circ}C$. As sintering temperature is raised., the nonlinear exponent was increased up to 1335$^{\circ}C$, reaching a maximum 70.53, whereas raising sintering temperature further caused it to decrease, reaching a minimum 50.18 and the leakage current was in the range of 1.92~4.12 $\mu$A. The best electrical properties was obtained from the varistors sintered at 1335$^{\circ}C$, exhibiting a maximum (70.53) in the nonlinear exponent and a minimum (1.92 $\mu$A) in the leakage current, and a minimum (0.035) in the dissipation factor. On the other hand, the donor concentration was in the range of (0.90~1.14)x10$^{18}$ cm$^{-3}$ , the density of interface states was in the range of (2.69~3.60)x10$^{12}$ cm$^{-2}$ , and the barrier height was in the range of 0.77~1.21 eV with sintering temperature. With raising sintering temperature, the variation of C-V characteristic parameters exhibited a mountain type, reaching maximum at 134$0^{\circ}C$. Conclusively, it was found that the V-I, C-V, and dielectric characteristics of Pr$_{6}$ O$_{11}$ -based ZnO varistors are affected greatly by sintering temperature.

• Phonetics and Speech Sciences
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• v.5 no.2
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• pp.33-41
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• 2013

This is a follow-up study on Han and Kang (2013) which argued that the Euclidean distances between /o/ and /u/ in Seoul Korean decreased in the first syllable position as speakers were among younger female speakers but not for male speakers, whereas in the second syllable position both gender groups showed a cross-generational decreasing effect of the Euclidean distance between /o/ and /u/. This study normalized the same data in Han and Kang (2013) which measured 12 speakers (six males and six females) for each Age group and investigated the spectral changes vowels /o/ and /u/ between age and gender, using the log-mean normalized statistical results. This study also examined overlap fraction values generated in SOAM 2D ($F1{\times}F2$) (cf. Wassink, 2006), which may also indicate the proximity of two vowels in question. The results showed that /o/ and /u/ vowels were making closer with /o/ raising for female speakers in $V_1$ and $V_2$ positions but only in the $V_2$ position for male speakers. That is, females led the upward movement of peripheral /o/ vowel, just like the raising of 'e' and 'o' in New York City (Labov, 1991). The results also showed that younger speakers used a rather narrow vowel space for the vowels. This also contributed to the proximity of the vowels /o/ and /u/, resulting in rather large overlap fraction values for younger speakers between these two vowels.

• Phonetics and Speech Sciences
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• v.8 no.4
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• pp.39-47
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• 2016

While acoustic studies in the past decade documented a raised /o/ by showing their lowered first formants (F1) almost overlapped with those of high back vowel /u/, no consensus has been made in terms of how this /o/-raising affects the vowels as a system in Seoul Korean. The current study aimed to investigate the age- and gender-related differences of the relative distance among the vowels to better understand the influence of this on-going sound change on the vowel system. We measured the static and dynamic spectral characteristics (F1 and F2) of the seven Korean monophthong vowels /e a ʌ o u ɨ i/ in the spontaneous speech of Seoul Corpus, and depicted the patterns of 30 individual speakers (10 speakers in each group of teens, 20s and 40s) as a function of age and gender. The static spectral examination showed low F1 values of /o/ in the spontaneous speech corpus confirming the vowel /o/ raising, and also revealed greater F2 values of /u, ɨ/ suggesting their anterior articulations. The tendencies were stronger when the speakers were younger and female. The spectral trajectories further showed that the F1 and F2 between /o/ and /u/ were differentiated throughout the vowel mid-point although the trajectories gradually merged near the vowel mid point in the older male speakers' productions. The acoustic evidence of contrast among /o, u, ɨ/ supports that the raised /o/ is not indicative of a merger with /u/ but rather implying a chain-like vowel shift in the Seoul Korean.

• Journal of the Korean Institute of Telematics and Electronics
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• v.14 no.3
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• pp.25-31
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• 1977

Fe V spinels were prepared by sintering the well-ground stoichiometric mixtures of Fe O and V O at 1,10$0^{\circ}C$ under H -CO atmosphere. The activation energy for electrical conduction decreases with increasing amount of iron. The tendency of activation energy depending on the amount of iron contained clarifies that the electrical condction of the spinel is mainly due to electron hopping between Fe and Fe ions at B sites. In the experiment for negative resistance characteristics, the threshold voltage (Vth) for the samples is related to ambient temperature, thickness and raising rate of applied voltage. Vth decreases as temperature increases while Vth increases linearly with thickness and Vth increases linearly with the raising rate of applied voltage in semi-logarithmic scale. These results lead to a conclusion that current paths mainly formed by thermal breakdown are ascribed to the negative resistance phenomena. Applying this property, these vanadium iron spinels may be used for switching elements.

• Phonetics and Speech Sciences
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• v.10 no.3
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• pp.1-8
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• 2018

The vowel /o/ in Seoul Korean has been undergoing a sound change by altering the acoustic weighting of F2 and F1. Studies documented that this on-going change redefined the nature of a /o/-/u/ contrast as F2 differences rather than as F1 differences. The current study examined two cognitive factors namely executive function capacity (EF) and autistic traits, in terms of their roles in explaining who in speech community would adapt new acoustic forms of the target vowels, and who would retain the old forms. The participants, 55 college students speaking Seoul Korean, produced /o/ and /u/ vowels in isolated words; and completed three EF tasks (Digit N-Back, Stroop, and Trail-Making Task), and an Autism screening questionnaire. The relationships between speakers' cognitive task scores and their utilizations of F1 and F2 were analyzed using a series of correlation tests. Results yielded a meaningful relationship in participants' EF scores interacting with gender. Among the females, speakers with higher EF scores were better at retaining F1, which is a less informative cue for females since they utilized F2 more than they did F1 in realizing /o/ and /u/. In contrast, better EF control among male speakers was associated with more use of the new cue (F2) where males still utilized F1 as much as F2 in the production of /o/ and /u/ vowels. Taken together, individual differences in acoustic realization can be explained by individuals' cognitive abilities, and their progress in the sound change further predicts that cognitive ability influences the utilization of acoustic information which is non-primary to the speaker.

• Journal of the Korean Ceramic Society
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• v.32 no.1
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• pp.31-36
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• 1995

(100) Si was oxidized in N2O ambient, and the film properties of oxynitride dielectrics were compared with pure SiO2. The growth rate, after pre-oxidation in O2/N2 ambient with raising temperature, is faster than that of O2/N2O treatment during the same condition. Nitrogen piles up at the interface of SiO2 and Si substrate and the content is about 2atom%. Comparing with pure SiO2, oxynitride dielectrics shows less dielectric breakdown failures and flat-band voltage shift, and good diffusion barrier property to dopant(BF2) is also observed.

• Proceedings of the Korean Society for Agricultural Machinery Conference
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• v.11 no.2
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• pp.68-72
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• 2006

• Bulletin of the Korean Chemical Society
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• v.20 no.7
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• pp.786-790
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• 1999

Relatively inert surface of microcrystalline MgO was modified into chemically active one by carrying out controlled hydration followed by dehydration at elevated temperature under dynamic vacuum. Even though the treatment by the first cycle of hydration-dehydration did not alter the porosity of MgO, it largely enhanced surface reactivity of the MgO toward adsorbed water, turning its outer layer into brucite upon rehydration. Treatment by the second cycle of hydration-dehydration generated micropores, and slit-shaped mesopores, raising the porosity of the MgO. The overlayer of Fe2O3 of the core/shell type composite magnesium oxide enhanced this surface modification, turning its surface into more porous and more active one than that of uncoated MgO, after the treatment by the hydration-dehydration.

• Journal of the Korean Ceramic Society
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• v.31 no.11
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• pp.1293-1298
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• 1994

(Zr, Sn)TiO4 powders were prepared in 0.05~0.13 ${\mu}{\textrm}{m}$ by coprecipitating (Zr4+, Ti4+)hydroxide on SnO2 particles and followed by calcination at 90$0^{\circ}C$ for 2 h. They sinter to 95% of relative density at 140$0^{\circ}C$ for 2 h. and shows dielectric constant, $\varepsilon$r=37.5 and quality factor, Qxf(GHz)=46,000. With 3 mol% of ZnO it sinters to rel=97.5%, $\varepsilon$r=39 and Qxf(GHz)=40,050 at 135$0^{\circ}C$ for 2 h., but raising sintering temperature to 140$0^{\circ}C$ deteriorates quality factor, relative density and microstructure with developing second phase.