• Proceedings of the KSME Conference
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• 2001.11a
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• pp.471-476
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• 2001

The main object of this study is to develop a reliable FEM simulation technique for stability test using ABAQUS software and to clarify the effect of base profile of a steel D&I(drawn and ironed) can on the dome reversal pressure. For the can after body making simulation, two kind of stability test, dome buckle test and axial crush test are performed. The factors studied in the base profile on the dome reversal pressure are the base diameter, the rim radius, the dome shoulder radius, the dome radius and the dome depth. Within the limits before the occurrence of normal snap-through buckling of dome, the dome reversal pressure is improved by decreasing the base diameter, increasing the dome depth or increasing the dome shoulder depth.

• Electrical & Electronic Materials
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• v.10 no.9
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• pp.881-888
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• 1997

This study demonstrats the profiles of phosphorus ions in silicon by MeV implantation(1∼3 MeV). Implanted profiles could be measured by SIMS(Cameca 4f) and compared with simulation results(TRIM program and analytical description method only using on Pearson function). The experimental result in the peak concentration region has a little bit deviation from simulation data. By RBS and Channeling measurements the defect distribution of implanted samples could be measured and spectrum are calibrated depth with RUMP simulation By XTEM measurement the thickness of defect zone also could be measured. Finally thermal annealing for the electrical activation of implanted ions carried out by RTA(rapid thermal annealing). The concentration-depth profiles after heat treatment was measured by SR(spreading resistance)-method.

• Proceedings of the KIEE Conference
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• 1994.07a
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• pp.72-75
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• 1994

In this paper, a novel method to figure out the relative residual stress distribution along the depth of silicon diaphragms is presented Cantilevers with various thickness are fabricated by the time controlled etching method using EPW as an etchant. The boron concentration along the depth of the cantilevers is obtained by the TSUPREM IV simulation, and the etching time to get the proper thickness is calculated. By measuring deflections of the p+ silicon cantilevers the stress profile along the depth of diaphragm is calculated. The obtained stress profile is reasonable and useful to expect the deflection of cantilevers and the buckling of diaphragms.

• Journal of Welding and Joining
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• v.20 no.1
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• pp.69-75
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• 2002

This study investigated the effect of the system parameters on penetration depth measurement using infrared temperature sensing system. The distance from focusing lens to detector was varied to diminish the error in measuring weld bead width. The effect of bead surface shape on measured surface temperature profile was evaluated using specimen heated by electric resistance. The measuring distance from laser beam was changed to optimize the measuring point. The results indicated that the monitoring device of surface temperature using infrared detector array was applicable to real time penetration depth control.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.3 no.2
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• pp.53-59
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• 2004

In this paper, we propose a new multi-purpose Scanning Force Microscope (SFM) system. The system can be used for nano/micro-scratching, in-process profile measurement, and observation of potential surface defects which occur during the scratching in air or liquid. Experimental results of nano/micro-scratching show that the smallest scratching depth can be controlled to be 10nm, which corresponds to the stability of the SFM system. Profile measurements of nano/micro-scratching surfaces have also been performed by the method of on-machine measurement and in-process measurement. Two measurement results were in good agreement with each other. The maximum difference was approximately 10 nm, which was mainly caused by the sampling repeatability error that influences the measurement accuracy Also, micro-defects on the micro-scratching surface were successfully detected by the SFM system. It was confirmed that the number of micro-defects increases when the surface is subjected to a cyclic bending load. The maximum depth was less than 100nm.

• Journal of Korea Multimedia Society
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• v.7 no.4
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• pp.474-483
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• 2004

In this paper, we present a new Practical implementation of a person verification system using the profile of 3-dimensional(3D) face images based on weighted Hausdorff distance(WHD) used depth information. The approach works on finding the nose tip have protrusion shape on the face using iterative selection method to use a fiducial feint and extract the profile image from vertical 3D data for the nose tip. Hausdorff distance(HD) is one of usually used measures for object matching. This works analyze the conventional HD and WHD, which the weighted factor is depth information. The Ll measure for comparing two feature vectors were used, because it is simple and robust. In the experimental results, the WHD method achieves recognition rate of 94.3% when the ranked threshold is 5.

• International Journal of Highway Engineering
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• v.17 no.1
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• pp.1-6
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• 2015

PURPOSES : Recently, attempts have been made to evaluate tire-pavement noise based on a measure of Mean Profile Depth (MPD). However, equivalent values of MPD appear to correspond to different levels of tire-pavement noise, which indicates that other factors such as texture wavelength need to be included to improve the accuracy of noise prediction. A single index to represent texture wavelength is proposed in this study. A consistent relationship between tire-pavement noise and texture wavelength on asphalt concrete pavement is observed. METHODS : Profile data and tire-pavement noise data were collected from a number of expressway sections in Korea. In addition, texture wavelength was defined by a Peak Number (PN), which was calculated using profile data. Statistical analysis was performed to find the relationship between the PN and tire-pavement noise. RESULTS : As a result of this study, a linear relationship between PN and tire-pavement noise is observed on asphalt concrete pavement. CONCLUSIONS : Tire-pavement noise on asphalt concrete pavement can be predicted from PN information.

• Tribology and Lubricants
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• v.16 no.5
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• pp.357-364
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• 2000

In this study, the sliding wear in spur gears, using Archard's wear model, is analyzed. Formulas of tooth sliding wear depth along the line of action are derived. The tooth profile is modified Id make a smooth transmission of the normal loads and the cylinder profile for reducing the pressure spike is suggested. The sliding wear rate is calculated with these profiling results. We expect these modification methods to contribute to the reduction of sliding wear not only in the root, but the tip of tooth and tooth edge.

• KSTLE International Journal
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• v.6 no.1
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• pp.1-7
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• 2005

Wear model for predicting the vehaviour of a depth is considered in this paper. It is deduced from the energy and volume based wear models such as the Archard equation and the workrate model. A new parameter of the equivalent depth ($D_e$= wear volume /worn area) is considered for the wear model of a depth prediction. A concenpt of a dissipated shear energy density is accommodated for in the suggested models. It is found that $D_e$ can distinguish the worn area shape. A cubic of $D_e$($D_e^3$) gives a better linear regression with the volume than that of the maximmum depth $D_{max}e$($D_{max}^3$) does. Both $D_{max}$ and $D_e$ are used for the presently suggested depth-based wear model. As a result, a wear depth profile can be simulated by a model using $D_{max}$. Wear resistance from the concern of an overall depth can be identified by the wear coefficient of the model using $D_e$.

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.4
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• pp.58-64
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• 1984

A simple model for the impurity profile in an ion-implanted channel layer of an enhancement type IGFET is assumed and a simple expression for the threshold voltage derived by using the assumed impurity profile is analyzed in detail. Also, this simple model is applied to simulating the substrate bias dependence of its threshold voltage. Excellent agreement is obtained between theory and experiment on n-channel devices. The error range of threshold voltage between gaussian-profile and box-profile is calculated in this paper and a new method of calculating the depth of ion-implanted Baler D is also introduced.