• Journal of Powder Materials
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• v.26 no.5
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• pp.405-409
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• 2019

Piezoelectric ceramic specimens with the $Pb(Mg_{1/3}Nb_{2/3})_{0.65}Ti_{0.35}O_3$ (PMN-PT) composition are prepared by the solid state reaction method known as the "columbite precursor" method. Moreover, the effects of the $Li_2O-Bi_2O_3$ additive on the microstructure, crystal structure, and piezoelectric properties of sintered PMN-PT ceramic samples are investigated. The addition of $Li_2O-Bi_2O_3$ lowers the sintering temperature from $1,200^{\circ}C$ to $950^{\circ}C$. Moreover, with the addition of >5 wt.% additive, the crystal structure changes from tetragonal to rhombohedral. Notably, the sample with 3 wt.% additive exhibits excellent piezoelectric properties ($d_{33}=596pC/N$ and Kp = 57%) and a sintered density of $7.92g/cm^3$ after sintering at $950^{\circ}C$. In addition, the sample exhibits a curie temperature of $138.6^{\circ}C$ at 1 kHz. Finally, the compatibility of the sample with a Cu electrode is examined, because the energy-dispersive X-ray spectroscopy data indicate the absence of interdiffusion between Cu and the ceramic material.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.1
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• pp.1-7
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• 2021

This study investigated the structural, dielectric, ferroelectric, and strain properties of (0.98-x)Bi1/2Na1/2TiO3-0.02BiFeO3-xSrTiO3 (BNT-BF-100xST, x＝0.20, 0.22, 0.24, 0.26, and 0.28). All samples were successfully synthesized using the conventional solid-state reaction method and sintered at 1,175℃ for 2 h. The average grain size of the BNT-BF-100x ceramics decreased with increasing ST content. Furthermore, we observed that the ferroelectric- relaxor transition temperature (TF-R) decreased with increasing ST content, which eventually vanished in the BNT-BF-24ST ceramics. The results indicated that a ferroelectric to relaxor phase transition could be induced by ST modification. Consequently, a large electromechanical strain of 633 pm/V at 4 kV/mm was observed for the BNT-BF-26ST ceramics. These results imply that our materials have the competitive advantage of larger strain under lower operating field conditions compared with other BNT-based lead-free piezoelectric ceramics. We expect that BNT-BF-ST lead-free piezoelectric ceramics are promising candidates as a novel ternary BNT-based system and can find potential applications in actuators.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.352-355
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• 2003

[ $Bi_{3.25}La_{0.75}Ti_3O_{12}$ ] (BLT) thin films were prepared by using metal organic decomposition method onto the LaNiO3 (LNO) bottom electrode. Both the structure and morphology of the films were analyzed by x-ray diffraction (XRD) and atomic force microscope (AFM). Even at low temperatures ranging from 450 to $650^{\circ}C$, the BLT thin films were successfully deposited on LNO bottom electrode and exhibited (117) orientation. The BLT thin films annealed as low as $600^{\circ}C$ showed excellent ferroelectricity, higher remanent polarization and no significant degradation of switching charge at least up to $5{\times}10^9$ switching cycles at a frequency of 100 kHz and 5 V. For the annealing temperature of $600^{\circ}C$, the remanent polarization $P_r$ and coercive field were $23.5\;{\mu}C/cm^2$ and 120 kV/cm, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.186.1-189
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• 2001

Ferroelectric $Bi_{4-x}$La$_{x}$Ti$_3$O$_{12}$ (BLT)thin films with various compositions(x=0.65, 0.70, 0.75) were prepared on Pt//Ti/SiO$_2$/Si(100) substrate by metal-organic deposition. The electrical and structural characteristics of BLT thin films were investigated to develop ferroelectric thin films for capacitor layers of FRAM. After spin coating, thin films were annealed at $650^{\circ}C$ for 1hour in oxygen atomosphere. Scanning electron micrographs showed uniform surfaces composed of rod-like grains. The $Bi_{4-x}$La$_{x}$Ti$_3$O$_{12}$ (x=0.70) thin film capacitors with a Pt top electrode showed better ferroelectric properties than other films. At the applied voltage of 5V, the dielectric constant($\varepsilon$$_{r}$), dissipation factor(tan$\delta$),remanent polarization(2Pr), and coercive field(2Ec) of the $Bi_{4-x}$La$_{x}$Ti$_3$O$_{12}$ (x=0.70)thin films were about 272.54, 0.059, 32.4 $\mu$C/cm$^2$, 2Ec=119.9kV/cm. Also the capacitor did not show any significant fatigue up to 4.8$\times$10$^{10}$ read/write switching cycles.hing cycles.s.

• Electrical & Electronic Materials
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• v.10 no.5
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• pp.434-439
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• 1997

It this paper, the piezoelectric and electro-induced strain properties of (P $b_{1-}$2x/3/B $i_{x}$ )[N $i_{1}$3/N $b_{2}$3/)$_{0.4}$( $Ti_{0.6}$Z $r_{0.4}$)$_{0.6}$] $O_3$ceramics (x=0, 0.005, 0.02) were investigated with the substitution of B $i^{3+}$, and the feasibility of the application for bimorph actuator was evaluated by measuring the dynamic properties of the piezoelectric bimorph fabricated with above ceramics. Dielectric constant was enhanced with the increase of B $i^{3+}$ substitution, and appeared the maximum value of 5032 at x=0.01 composition. Increasing the substitution of B $i^{3+}$, the electromechanical coefficient( $k_{p}$ , $k_{31}$ ) was increased up to the substitution of 0.5 mol% B $i^{3+}$, showed the value of 0.656, 0.439, respectively. The piezoelectric constant( $d_{33}$ $d_{31}$ ) had the highest value of 344, 825 with the substitution of 0.5 mol% B $i^{3+}$. The strain, generated by 60 Hz AC electric field, had the largest value of 1200($\times$10$^{-6}$ $\Delta$1/1) in the composition with the substitution of 0.5 mol% B $i^{3+}$. The dynamic properties of the bimorph actuator, fabricated with the composition substitution of 0.5 mol% B $i^{3+}$, showed the largest value of 325 $\mu$m at $\pm$150 V square pulse. square pulse.are pulse..

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.6
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• pp.342-347
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• 2016

We investigated the effect of $Bi_{1/2}(Na_{0.82}K_{0.18})_{1/2}TiO_3$ (BNKT) modification on the ferroelectric and electric-field-induced strain (EFIS) properties of lead-free $0.97Bi_{1/2}(Na_{0.82}K_{0.18})_{1/2}TiO_3-0.03LaFeO_3$ (BNKTLF) ceramics as a function of BNKT content (x= 0, 0.1, 0.2, 0.3, 0.5, and 1). BNKT-modified BNKTLF powders were synthesized using a conventional solid-state reaction method. As the BNKT content x increased from 0 to 1 the normalized electric-field-induced strain ($S_{max}/E_{max}$) was observed to increase at relatively low fields, i.e., below the poling field. Moreover, BNKTLF-30BNKT showed about 460 pm/V as low as at 3 kV/mm, which is a considerably high value among the lead-free systems reported so far. Consequently, it was confirmed that ceramic-ceramic composite, a mixture of an ergodic relaxor matrix and embedded ferroelectric seeds, is a salient way to make lead-free piezoelectrics practical with enhanced EFIS at low field as well as less hysterical.

• Advances in materials Research
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• v.2 no.1
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• pp.1-13
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• 2013

Lead-free compound $(Na_{0.5}Bi_{0.5})(Zr_{0.75}Ti_{0.25})O_3$ was prepared using conventional ceramic technique at $1070^{\circ}C$/4h in air atmosphere. X-ray diffraction analysis showed the formation of single-phase orthorhombic structure. Permittivity data showed low temperature coefficient of capacitance ($T_{CC}{\approx}5%$) up to $100^{\circ}C$. Complex impedance studies indicated the presence of grain boundary effect, non-Debye type dielectric relaxation and evidences of a negative temperature coefficient of resistance. The ac conductivity data were used to evaluate the density of states at Fermi level and apparent activation energy of the compound.

• Korean Journal of Materials Research
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• v.14 no.10
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• pp.701-706
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• 2004

Bismuth layered structure ferroelectric thin films, La-substituted $Bi_{4}Ti_{3}O_{12}$ ($Bi_{1-x}La_{x}Ti_{3}O_{12}$, x=0.75, BLT) were prepared on the $Pt(111)/Ti/SiO_2/Si(100)$ substrates by a sol-gel spin coating process. The thin films were annealed in various conditions, i.e., oxygen, nitrogen and vacuum atmospheres for various annealing time. We investigated the annealing condition effects on the grain orientation and ferroelectric properties. The measured XRD patterns revealed that the BLT thin films showed only $Bi_{4}Ti_{3}O_{12}$-type phase with random orientation. $La^{3+}$ ion substitution for $Bi^{3+}$ ion in perovskite layers of $Bi_{4}Ti_{3}O_{12}$ decreased the degree of c-axis orientation and increased the remanent polarization ($2P_{r}$). The remanent polarization ($2P_{r}$) and the coercive field ($2E_{c}$) of the BLT thin film annealed at $650^{\circ}C$ for 5 min in oxygen atmosphere were $87{\mu}C/cm^2$ and 182 kV/cm, respectively, at an applied electric field of 240 kV/cm. For all of the BLT thin films annealed in various conditions, the fatigue resistance was shown. The improvement of ferroelectric properties with La substitution in $Bi_{4}Ti_{3}O_{12}$ could be attributed to the changes in space charge densities and grain orientation in the thin film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.346-349
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• 2002

Ferroelectric $Bi_{4-x}Nd_{x}Ti_{3}O_{12}(BNdT)$ thin films with the composition(x=0.75) were prepared on $Pt/Ti/SiO_{2}/Si(100)$ substrate by metal-organic deposition. The films were annealed by various temperatures from 550 to $650^{\circ}C$ and then the electrical and structural characteristics of BNdT films were investigated for the application of FRAM. Electrical properties such as dielectirc constant, 2Pr and capacitance were quite dependent on the thermal heat treatment. The measured 2Pr value on the BNdT capacitor annealed at $650^{\circ}C$ was $56{\mu}C/cm^{2}$ at an applied voltage of 5V. In fatigue characteristics value remained costant up to $8{\times}10^{10}$ read/write switching cycles at a frequency of 1Mhz regardless of annealing temperatures.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.9
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• pp.577-580
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• 2015

In this paper, in order to develop the composition ceramics with the outstanding piezoelectric properties, $Pb(Mg_{1/2}W_{1/2})_{0.03}(Ni_{1/3}Nb_{2/3})_{0.09}(Zr_{0.5}Ti_{0.5})_{0.88}O_3$ ceramics substituted with $BiFeO_3$ were prepared by the conventional solid-state reaction method. The addition of small amount of $Li_2CO_3$ and $CaCO_3$ as sintering aids decreased the sintering temperature of the ceramics. The effects of $BiFeO_3$ substitution on their piezoelectric and dielectric properties were investigated. when 0.015 mol $BiFeO_3$ was substituted, the optimal physical properties of $d_{33}=590pC/N$, $E_c=8.78kV/mm$ were obtained.