• 제목/요약/키워드: (111) orientation

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아아크방전 유도형 이온플레이팅에 의한 Cr-N 피막의 특성 (Properties of Cr-N Films Prepared by the Arc-induced Ion Plating)

  • 정재인;문종호;홍재화;강정수;이영백
    • 한국표면공학회지
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    • 제24권1호
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    • pp.24-24
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    • 1991
  • Cr-N films were deposited on low-carbon steel sheets by the reactive arc-induced ion plating (AIIP). The influence of the deposition conditions (nitrogen pressure and substrate bias voltage) on the crystal orientation, morphology and microhardness of the Cr-N films has been investigated using x-ray diffractometer and scanning electron microscope. The impurities and contaminations on the surface and at the interface, and the layer-by-layer compositions of the film have been analyzed using scanning Auger multiprobe (SAM) and glow discharge spectroscope (GDS). The mixed state of Cr and Cr2N turned out to have a fine fibrous structure. The Cr2N films were deposited at a wide range of nitrogen flow rates. The orientations of Cr2N films were mainly (110) and (111), and the intensity of the (111) peak increased as the substrate bias voltage increased. The micorstructure of the Cr2N film was dense and no columnar structure was observed. The films in the mixed state of Cr2N and CrN were also dense without columnar structure. The maximum microhardness of the Cr-N films was 2400 kg/$\textrm{mm}^2$ at 10gf load.

아아크방전 유도형 이온플레이팅에 의한 Cr-N 피막의 특성 (Properties of Cr-N Films Prepared by the Arc-induced Ion Plating)

  • 정재인;문종호;홍재화;강정수;이영백
    • 한국표면공학회지
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    • 제25권1호
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    • pp.24-33
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    • 1992
  • Cr-N films were deposited on low-carbon steel sheets by the reactive arc-induced ion plating (AIIP). The influence of the deposition conditions (nitrogen pressure and substrate bias voltage) on the crystal orientation, morphology and microhardness of the Cr-N films has been investigated using x-ray diffractometer and scanning electron microscope. The impurities and contaminations on the surface and at the interface, and the layer-by-layer compositions of the film have been analyzed using scanning Auger multiprobe (SAM) and glow discharge spectroscope (GDS). The mixed state of Cr and Cr₂N turned out to have a fine fibrous structure. The Cr₂N films were deposited at a wide range of nitrogen flow rates. The orientations of Cr₂N films were mainly (110) and (111), and the intensity of the (111) peak increased as the substrate bias voltage increased. The microstructure of the Cr₂N film was dense and no columnar structure was observed. The films in the mixed state of Cr₂N and CrN were also dense without columnar structure. The maximum microhardness of the Cr-N films was 2400 kg/㎟ at 10 gf load.

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이종접합 태양전지 (II-VI)의 제작과 물성에 대한 연구($n-Cd_{1-x}Zn_xS/p-Si$ 태양전지를 중심으로) (Fabrication and Physical Properties of Heterojunction Solar Cell (II-VI) of $n-Cd_{1-x}Zn_xS/p-Si$)

  • 이수일;김병철;서동주;최성휴;홍광준;유상하
    • 태양에너지
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    • 제8권1호
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    • pp.41-48
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    • 1988
  • Heterojunction solar cells of $n-Cd_{1-x}Zn_xS/p-Si$ were fabricated by solution growth technique. The crystal structure, spectral response, surface morphology, and I-V characteristics of the $n-Cd_{1-x}Zn_xS/p-Si$ heterojunction solar cells were studied. The $Cd_{1-x}Zn_xS$ layer deposited on a silicon substrate (111) were found to be a cubic structure with the crystal orientation (111), (220) of the CdS and to be a hexagonal structure with crystal orientation (100) of the ZnS. The open-circuit voltage, short-circuit current, fill factor, and conversion efficiency of $n-Cd_{1-x}Zn_xS/p-Si$ heterojunction solar cell under $100mW/cm^2$ illumination were found to be 0.43V, 38mA. 0.76, and 12.4%, respectively.

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TiAl에 석출한 질화물의 결정구조와 형태 (Crystal Structure and Morphology of Nitride Precipitates in TiAl)

  • 한창석;구경완
    • 한국재료학회지
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    • 제18권1호
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    • pp.51-56
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    • 2008
  • The crystal structures and morphologies of precipitates in $L1_0$-ordered TiAl intermetallics containing nitrogen were investigated by transmission electron microscopy (TEM). Under aging at an approximate temperature of 1073 K after quenching from 1423 K, TiAl hardens appreciably due to the nitride precipitation. TEM observations revealed that needle-like precipitates, which lie only in one direction parallel to the [001] axis of the $L1_0$-TiAl matrix, appear in the matrix preferentially at the dislocations. Selected area electron diffraction (SAED) pattern analyses showed that the needle-shaped precipitate is perovskite-type $Ti_3AlN$ (P-phase). The orientation relationship between the P-phase and the $L1_0$-TiAl matrix was found to be $(001)_P//(001)_{TiAl}\;and\;[010]_P//[010]_{TiAl}$. By aging at higher temperatures or for longer periods at 1073 K, plate-like precipitates of $Ti_2AlN$ (H-phase) with a hexagonal structure formed on the {111} planes of the $L1_0$-TiAl matrix. The orientation relationship between the $Ti_2AlN$ and the $L1_0$-TiAl matrix is $(0001)_H//(111)_{TiAl}\;and\;_H//_{TiAl}$.

졸겔 법으로 제조한 압전 센서용 PZT 박막의 결정 배향 및 전기적 특성 연구 (A study on the crystalline orientation and electric properties of sol-gel PZT thin film for piezoelectric sensors)

  • 변진무;이호년;이홍기;이성의;이희철
    • 센서학회지
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    • 제19권3호
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    • pp.202-208
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    • 2010
  • This study examined the dependency of crystalline orientation and electric properties of sol-gel PZT film on hydrolysis, a $PbTiO_3$ seed layer and a concentration of sol-gel solution. The PZT thin films were prepared by using 2-Methoxyethanol-based sol-gel method and spin-coating on Pt/Ti/$SiO_2$/Si substrates. The 1-${\mu}m$-thick PZT films were coated and then fired in a furnace by direct insert method. The highly (111) oriented PZT film of pure perovskite structure could be obtained. We could control the degree of orientation by various parameters such as hydrolysis, a $PbTiO_3$ seed layer and a concentration of sol-gel solution. The highest measured remanent polarization, dielectric constant and piezoelectric coefficient are $24.16\;{\mu}C/cm^2$, 2808, and 159 pC/N, respectively.

D.C magnetron sputter법으로 증착된 TiAlN의 중간층에 따른 특성연구 (Characteristics of TiAlN Film on Different Buffer Layer by D.C Magnetron Sputter)

  • 김명호;이도재;이광민;김운섭;김민기;박범수;양국현
    • 한국재료학회지
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    • 제18권10호
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    • pp.558-563
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    • 2008
  • TiAlN films were deposited on WC-5Co substrates with different buffer layers by D.C. magnetron sputtering. The films were evaluated by microstructural observations and measuring of preferred orientation, hardness value, and adhesion force. As a process variable, various buffer layers were used such as TiAlN single layer, TiAlN/TiAl, TiAlN/TiN and TiAlN/CrN. TiAlN coating layer showed columnar structures which grew up at a right angle to the substrates. The thickness of the TiAlN coating layer was about $1.8{\mu}m$, which was formed for 200 minutes at $300^{\circ}$. XRD analysis showed that the preferred orientation of TiAlN layer with TiN buffer layer was (111) and (200), and the specimens of TiAlN/TiAl, TiAlN/CrN, TiAlN single layer have preferred orientation of (111), respectively. TiAlN single layer and TiAlN/TiAl showed good adhesion properties, showing an over 80N adhesion force, while TiAlN/TiN film showed approximately 13N and the TiAlN/CrN was the worst case, in which the layer was destroyed because of high internal residual stress. The value of micro vickers hardness of the TiAlN single layer, TiAlN/TiAl and TiAlN/TiN layers were 2711, 2548 and 2461 Hv, respectively.

GaAs 및 CdZnTe기판위에 MOVPE 법으로 성장된 HgCdTe 박막의 특성 (Characteristics of MOVPE Grown HgCdTe on GaAs and CdZnTe Substrates)

  • 김진상;서상희
    • 한국결정학회지
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    • 제12권3호
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    • pp.171-176
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    • 2001
  • (100), (111), (211)CdZnTe 기판 및 (100)GaAs 기판위에 HgCdTe 박막을 MOVPE 법으로 성장하였다. 기판의 방위에 따라 성장된 박막의 표면형상, 전기적 특성, 결정성 및 조성의 변화를 분석하였다. (111) CdZnTe 기판 위에서는 3차원적인 facet 형태의 성장이 일어났다. (100) CdZnTe 기판 위에 성장된 HgCdTe 박막의 경우 DCX반치폭은 55arcsec 정도로 125 arcsec의 반치폭을 보인 (100) GaAs에 비하여 우수한 결정성을 나타내었다. 그러나 전기적인 특성은 GaAs 기판의 경우, 이동도가 높은 n-형 전도성을 보였으나 CdZnTe 기판을 사용한 경우에는 10/sup 16/㎤ 이상의 운반자 농도를 갖는 p-형 전도성을 나타내었다.

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RF Magnetron sputtering을 이용한 ${Ce_{1-x}}{RE_x}{O_{2-y}}$ 박막성장 (The growth of ${Ce_{1-x}}{RE_x}{O_{2-y}}$ Thin Films by RF Magnetron Sputtering)

  • 주성민;김철진;박병규
    • 한국세라믹학회지
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    • 제37권10호
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    • pp.1014-1020
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    • 2000
  • RF 마크네트론 스퍼터법으로 Ce의 일부를 희토류 원소로 치환한 Ce$_{1-x}$RE$_{x}$O$_{2-y}$(0.1$\leq$x$\leq$0.4, RE=Y, Nd) 박막을 Si(111), $Al_2$O$_3$(1012) 기판 위에 1450~1$600^{\circ}C$로 소결한 target을 이용하여 성장시켰다. Ce$_{1-x}$RE$_{x}$O$_{2-y}$ 박막의 성장시 기판온도 및 증착시간 등을 변화시켜 성장시켰으며, 성장된 박막의 특성분석은 XRD, SEM, TEM으로 행하였다. 증착된 박막의 방향성 및 결정성장 거동은 증착온도 및 시간에 따라 차이를 보였다. Si(111) 기판 위에 증착된 Ce$_{1-x}$Y$_{x}$O$_{2-y}$(x=0.3) 박막의 경우, 80$0^{\circ}C$에 비해 7$50^{\circ}C$에서 증착 시간에 따른 (111) 우선배향성의 정도가 나은 결과를 보였으며, $Al_2$O$_3$(1012) 기판 위에 증착한 Ce$_{1-x}$Nd$_{x}$O$_{2-y}$(x=0.3) 박막 또는 (111) 우선배향성을 나타내었다.을 나타내었다.

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HVPE법에 의한 질화갈륨 단결정막 성장시 상전이에 관한 연구 (Phase Transformation in Epitaxial Growth of Galium Nitride by HVPE Process)

  • ;;김향숙;이선숙;황진수;정필조
    • 한국결정학회지
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    • 제6권1호
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    • pp.49-55
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    • 1995
  • HVPE(Halide Vapour Phase Epitaxy) 법에 의하여 육방정계 질화갈륨(GaN) 단결정막의 (0001)면에 섬모양으로 배향된 입방정계 β-GaN상과 육방정계 α-GaN상 사이의 상호 배향은 [110](111) β-GaN//[1120](001) α-GaN 관계를 갖는 것으로 관찰되었다. 삼각섬 모양을 β-GaN는 막표면에 평행인 (111)면에 대한 쌍정위치를 점하고 있었다. 광발광(PL) 및 국소부위 음극선 발광(CL)을 측정하여 β-GaN의 금제대폭값은 실온에서 3.18±0.30eV로 얻어졌다.

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도시 취업주부의 라이프스타일과 환경친화적 행동에 관한 연구 (The Life Style of Urban Empolyed Wives and Pro-Environmental Behavior)

  • 변순희;계선자
    • 대한가정학회지
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    • 제42권9호
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    • pp.111-134
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    • 2004
  • The purpose of this dissertation is firstly to examine the level of pro-environmental behavior of urban employed wives depending on their life style type and secondly to identify effective ways to promote their pro-environmental behavior. A structured questionnaire interview was conducted with 700 urban employed wives who lived in the Seoul Metropolitan area, and 566 of the responses were valid for analysis. For statistical analysis, this research reviewed the frequencies, percentage, mean, standard deviation(SD), Pearson's correlations, Cronbach's u, factor analysis, cluster analysis, ANOVA, $\chi$$^2$-test, Duncan's Multiple Range Test, and multiple regression using SPSS/PC WIN. The findings of analysis of the study are as follows: 1. Among life style types of employed wives, the order of ecological value was orientation type (37.3%), followed by economical value orientation type (25.8%), uninterested type (18.7%), and convenience-centric value orientation type (18.2%).Pro-environmental behavior scored relatively highly at 3.45 in average. 2. In the analysis of the relationship between life style and background variations, every variation except environmental knowledge was meaningful. 3. In the relationship between pro-environment behavior and background variations, every variation was meaningful except housing types, having helper or not, and environmental knowledge. 4. The recognition level of environmental pollution was important among the variations affecting pro-environmental behavior. 5. There was a difference in pro-environmental behaviors by the following life style types: ecological value orientation, economical value orientation, convenience centric orientation and uninterested. 6. For the relative contribution comparison of background variations (socio-economic variation and environmental variation) and life style variations to the pro-environmental behavior of urban empolyed wives, this research additionally applied each independent variable group. As a result, the explanation level drastically increased in the third step that analyzed the relationship with life style.