• Proceedings of the KSME Conference
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• 2004.04a
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• pp.138-143
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• 2004

Recently there has been a great world-wide interest in developing and characterizing new nano-structured materials. These newly developed materials are often prepared in limited quantities and shapes unsuitable for the extensive mechanical testing. The development of depth sensing indentation methods have introduced the advantage of load and depth measurement during the indentation cycle. In the present work, ZnO thin films are prepared on Si(111), Si(100) substrates at different temperatures by pulsed laser deposition(PLD) method. Because the potential energy in c-axis is low, the films always show c-axis orientation at the optimized conditions in spite of the different substrates. Thin films are investigated by X-ray diffractometer and Nano indentation equipment. From these measurements it is possible to get elastic modulus and hardness of ZnO thin films on Si substrates.

• Applied Science and Convergence Technology
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• v.23 no.3
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• pp.145-150
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• 2014

MgO thin films were deposited by internal ICP-assisted reactive-magnetron sputtering with bipolar pulse bias on a substrate to suppress random arcs. Mg is reactively sputtered by a bipolar pulsed DC power of 100 kHz into ICP generated by a dielectrically shielded internal antenna. At a mass flow ratio of $Ar/O_2$ = 10 : 2 and an ICP/sputter power ratio of 1 : 1, optimal film properties were obtained (a powder-like crystal orientation distribution and a RMS surface roughness of approximately 0.42 nm). A bipolar pulse substrate bias at a proper frequency (~a few kHz) prevented random arc events. The crystalline preferred orientations varied between the (111), (200) and (220) orientations. By optimizing the plasma conditions, films having similar bulk crystallinity characteristics (JCPDS data) were successfully obtained.

• Journal of the Korean Ceramic Society
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• v.33 no.7
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• pp.761-770
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• 1996

Silicon carbide (SiC) films were deposited by low pressure chemical vapor deposition (LPCVD) using MTS (CH3SICl3) in a hydrogen atmosphere onto graphite substrates. Depletion effects of reactants which usually occur in the hot wall horizaontal reactor were increased with deposition temperature and pressure. Below 50 torr of total pressure (111) plane was preferenctially grown irrespectrive of deposition temperature and deposition site. Over 50 torr of total pressure however (220) plane was preferentially deposited under 130$0^{\circ}C$ and at inlet site. The surface morphologies of SiC films were uniform at all deposition sites under low pressure but greatly changed with pressure. It shows that a facet structure which was formed above 125$0^{\circ}C$ played an important role in the changed of preferred orientation and surface roughness.

• Journal of the Korean Ceramic Society
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• v.27 no.5
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• pp.652-660
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• 1990

Oxidation of Mn-Zn ferrite was made in air at various temperatures ranging from 400$^{\circ}C$ to 1150$^{\circ}C$. Subsequent reduction fo these oxidized samples was also made in air at 1300-1350$^{\circ}C$ where the spinel phase of Mn-Zn ferrite is stable. Morphological observation revealed that the shape of precipitated hematite was plate or lath type on the close-packed habit plane of {111} ferrite which has a definite orientation relationship. The growth of precipitates showed the behavior fo parabolic dependence of the oxidating time. An apparent activation energy for the growth was found to be 125${\pm}$3Kcal/mol. The fact that pores are observed along the precipitates illustrates the oxidation to occur dominantly by the counterdiffusion of cations and ction vacancies. For the reductio reaction pores are found to form at the site once occupied by the precipitates and at the surface. This observation illustrates that the oxygen volitalization from interior region to the surface is the dominant process for the reduction reaction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.47-47
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• 2007

Indium oxide conducting films were dep9sited on Si(100) substrates at various temperatures by liquid delivery metal organic chemical vapor deposition using Indium (III) tris (2,2,6,6-tetramethyl-3.5-heptanedionato) $(dpm)_3$ precursors. The films deposited at $200{\sim}400^{\circ}C$ were grown with a (111) preferred orientation and exhibit an increase of grain size from 21 to 33nm with increasing deposition temperature. In the range of deposition temperature, there is no metallic indium phase in deposited films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.393-394
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• 2005

SBN25 박막을 씨앗층으로 사용하여 이온빔으로 증착한 SBN60/SBN25 다층박막에 대하여 결정화 및 배향 특성을 고찰하였다. 기판은 Pt(111)/TiO2/SiO2/Si(100) 웨이퍼 (Pt 두께 200nm)를 사용하였으며, 약 3000${\AA}$으로 증착한후 650~$750^{\circ}C$에서 후열처리를 하였다. 제작된 박막의 증착조건 및 열처리 조건에 따른 결정화특성 변화에 대하여 연구하였으며, SBN 박막을 MFM 구조의 박막커패시터로 제조하여 강유전특성을 측정하였다.

• Journal of Korean Vacuum Science & Technology
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• v.2 no.2
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• pp.133-138
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• 1998

To enhance the ionization level of I-PVD and reduce the coil voltage two approaches were tried and as a diagnostic, optical emission spectroscopy and impedance analysis of the plasma was done with a range of Ar pressures and RF power along with XRD analysis of deposited Ag films. RF sputtering power was pulsed with various on/off time scales to recover the ICP quenched by sputtered metals. This in average enhances the ionization of the sputtered atoms with 10 ms/10 ms and 100 ms/100ms pulse on/off time duration and gives higher (200) preferred orientation over (111) in deposited Ag films. Secondly, Small axial B field about 8G remarkably reduced RF coil sputtering and showed scaled relationship between RF power and magnetic field strength for optimal process condition. From OES of Ar0 and Ar+, wave-like dispersion structure appeared and reduced the coil voltage about 20% at very weak field strength of 8G. This should be studied further to have nay relation with low mode helicon wave launching.

• Journal of the Korean Society for Heat Treatment
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• v.10 no.1
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• pp.55-62
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• 1997

The morphology of deformation induced dislocations in polycrystalline $Ni_3$(Al, Cr) containing $M_{23}C_6$ precipitates has been investigated in terms of transmission electron microscopy(TEM). Fine Polyhedral precipitates of $M_{23}C_6$ appeared in the matrix by aging at temperatures around 973 K after solution annealing at 1423 K. TEM examination revealed that the $M_{23}C_6$ phase and the matrix lattices have a cube-cube orientation relationship and keep partial atomic matching at the {111} interface. After deformation at temperature below 973 K, typical Orowan loops were observed surrounding the $M_{23}C_6$ particles. At higher deformation temperatures, the Orowan loops disappeared and the morphology of dislocations at the particle-matrix interfaces suggested the existence of attractive interaction between dislocations and particles. The change of the interaction modes between dislocation and particles with increasing deformation temperature can be considered as a result of strain relaxation at the interface bet ween matrix and particles.

• Journal of the Korean Society for Heat Treatment
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• v.17 no.4
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• pp.236-240
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• 2004

Effect of plasma power on PECVD process were investigated in this study. TiN and TiCN films were deposited on nitrided STD11 steel with 600W, 1,200W and 1,600W plasma power. As the plasma power was increased, the preferred orientation was reinforced from (200) to (111) and the hardness of films was improved. The low plasma power was, however, effective for improving of adhesion force of films. Regarding above properties, TiN and TiCN films were deposited by gradient plasma power. It was possible to get high hardness as well as adhesion force through gradient plasma power.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.406-409
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• 1999

Thin films of silver with high reflectance of 95% and above were fabricated successfully on polyester substrate by using e-beam evaporation processes. The optimum process condition was investigated by varying the current values applied while keeping the substrate temperature at room temperature by circulating the cooling water around it during deposition. Thin films of silver deposited with 30 mA as current revealed the highest reflectance of 96.4%, while being illuminated with a light of 700nm wave-length. But their adhesion showed unsatisfactory results. Though the films showed a condensation type in the cross-sectional views, they revealed crystallinity in the planes of (111) and (200) and growth orientation in <100> direction.