• Title/Summary/Keyword: (110)Si

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In situ Epitaxial Growth of the $TiSi_2$ on si(111)-7$\times$7 Substrate by Codeposition (동시증착에 의한 Si(111)-7$\times$7 기판 위에 $TiSi_2$ 에피택셜 성장)

  • 최치규;류재연;오상식;염병렬;박형호;조경익;이정용;김건호
    • Journal of the Korean Vacuum Society
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    • v.3 no.4
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    • pp.405-413
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    • 1994
  • 초고진공에서 기판 Si(111)-7$\times$7 위에 Ti:Si 또는 1:2의 조성비로 Ti와 Si을 동시증착한 후 in situ 열처리하여 TiSi2 박막을 에피택셜 성장시켰다 XRD와 XPS 분석결과 동시증착된 혼합 층에서 C49-TiSi2 박막의 성장은 핵형성에 의함을 확인하였으며 양질의 C49-TiSi2 박막은 Ti를 증착한후 Ti와 Si를 동시 증착한 (Ti+2Si)/(Ti)/Si(111)-7$\times$7구조의 시료를 초고진공에서 50$0^{\circ}C$에서 열처리하여 얻을수 있었다. 형성된 C49-TiSi2/Si(111)의 계면은 깨끗하였고 HRTEM 분석 결과 C49-TiSi2\ulcornerSi(111)의 계면은 약 10。 의 편의를 가지면서 TiSi2[211]∥Si[110] TiSi2(031)/Si(111) 의 정합성을 가졌으며 시료의 전 영 역에 에피택셜 성장되었다.

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Influence of Oxidation Inhibitor on Carbon-Carbon Composites: 5. Studies on Anti-oxidation Properties of the Composites (산화억제제 첨가에 의한 탄소/탄소 복합재료의 물성에 관한 연구: 5. 탄소/탄소 복합재료의 내산화성 연구)

  • 박수진;서민강;조민석;이재락
    • Polymer(Korea)
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    • v.24 no.2
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    • pp.237-244
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    • 2000
  • Phenolic resin used as a precursor of carbonized matrix for carbon-carbon composites was modified by addition of molybdenum disilicide (MoSi$_2$) in various concentrations of 0, 4, 12 and 20% by weight to improve the anti-oxidation properties of the composites. The green body was manufactured by a prepreg method and was submitted to carbonization up to 110$0^{\circ}C$. In this work, the oxidation behavior of carbon-carbon composites with MoSi$_2$ as an oxidation inhibitor was investigated at the temperature range of 600-100$0^{\circ}C$ in an air environment. The carbon-carbon composites with MoSi$_2$ showed a significantly improved oxidation resistance due to both the reduction of the porosity formation and the formation of mobile diffusion barrier for oxygen when compared to those without MoSi$_2$. Carbon active sites should be blocked, decreasing the oxidation rate of carbon. This is probably due to the effect of the inherent MoSi$_2$ properties, resulted from a formation of the protective layer against oxygen attack in the composites studied.

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Characteristics of Defects in SiOx Thin films on Ethylene Terephthalate by High-temperature E-beam Deposition (고온 전자빔 증착에 의한 Ethylene Terephthalate상의 SiOx 박막의 특성 평가)

  • Han Jin-Woo;Kim Young-Hwan;Kim Jong-Hwan;Seo Dae-Shlk;Moon Dae-Gyu
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.1
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    • pp.71-74
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    • 2006
  • In this paper, we investigated the characterization of silicon oxide(SiOx) thin film on Ethylene Terephthalate(PET) substrates by e-beam deposition for transparent barrier application. The temperature of chamber increases from $30^{\circ}C$ to $110^{\circ}C$, the roughness increase while the Water vapor transmission rate (WVTR) decreases. Under these conditions, the WVTR for PET can be reduced from a level of $0.57 g/m^2/day$ (bare subtrate) to $0.05 g/m^2/day$ after application of a 200-nm-thick $SiO_2$ coating at 110 C. A more efficient way to improve permeation of PET was carried out by using a double side coating of a 5-${\mu}m$-thick parylene film. It was found that the WVTR can be reduced to a level of $-0.2 g/m^2/day$. The double side parylene coating on PET could contribute to the lower stress of oxide film, which greatly improves the WVTR data. These results indicates that the $SiO_2$ /Parylene/PET barrier coatings have high potential for flexible organic light-emitting diode(OLED) applications.

Molecular Dynamics Simulation on the Behavior of Si(001) Vicinal Surface by Using Empirical Tersoff Potential (Tersoff 포덴셜을 이용한 Si(001) 미사면 거동에 대한 분자동력학적 연구)

  • Choi, Jung-Hae;Cha, Pil-Ryung;Lee, Seung-Cheol;Oh, Jung Soo;Lee, Kwang-Ryeol
    • Korean Journal of Metals and Materials
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    • v.47 no.1
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    • pp.32-37
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    • 2009
  • Molecular dynamic simulations on the structural evolution of the Si(001) vicinal surfaces, which are tilted with respect to [100] and [110] directions were performed by using the empirical Tersoff potential. Tersoff potential was implemented at LAMMPS code and confirmed to describe the properties of Si. When the steps are generated along [100] direction, symmetric dimer rows formed with respect to the step edges. On the other hand, when the steps are generated along [110] direction, alternating dimer rows form with respect to the step edges. The configurational differences between the two vicinal surfaces were discussed in terms of the surface diffusion and the possibility of preventing step bunching for the (001) vicinal surface tilted along [100] direction was suggested.

The Frequency Characteristics of Elastic Wave by Crack Propagation of SiC/SiC Composites

  • Kim, J.W.;Nam, K.W.
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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    • 2012.10a
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    • pp.110-114
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    • 2012
  • We studied on the nondestructive evaluation of the elastic wave signal of SiC ceramics and SiC/SiC composite ceramics under monotonic tensile loading. The elastic wave signal of cross and unidirectional SiC/SiC composite ceramics were obtained by pencil lead method and bending test. It was applied for the time-frequency method which used by the discrete wavelet analysis algorithm. The time-frequency analysis provides time variation of each frequency component involved in a waveform, which makes it possible to evaluate the contribution of SiC fiber frequency. The results were compared with the characteristic of frequency group from SiC slurry and fiber. Based on the results, if it is possible to shift up and design as a higher frequency group, we will can make the superior material better than those of exiting SiC/SiC composites.

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Surface-energy -induced Selective Growth and Magnetic Induction in 3%Si-Fe Strip (극박 3%규소강에서 표면에너지 유기 선택적 결정성장 현상과 자성특성)

  • 조성수
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.15 no.4
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    • pp.57-61
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    • 2001
  • The {111}<112> deformation torture, which originated from the {110}<00l> texture near the surface of hot bands, is not prerequisite for the recrystallized {110}<001> Goss texture. During final annealing, surface-energy-induced selective growth of grains urn at the strip surface of 3%Si-Fe alloys containing 6ppm bulk content of sulfur. With decreasing final reduction, the probability that Goss grains survive under the highly segregated sulfur atmosphere and have a chance for later surface-energy-induced selective growth becomes higher, resulting in high magnetic induction.

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