• Journal of the Korean institute of surface engineering
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• v.36 no.1
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• pp.14-21
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• 2003

Thin films of ZrO$_2$ and TiO$_2$ were deposited on Si(100) substrates using RF magnetron sputtering technique. To study an influence of the sputtering parameters, systematic experiments were carried out in this work. XRD data show that the $ZrO_2$ films were mainly grown in the [111] orientation at the annealing temperature between 800 and $1000^{\circ}C$ while the crystal growth direction was changed to be [012] at above $1000^{\circ}C$. FT-IR spectra show that the oxygen stretching peaks become strong due to $SiO_2$ layer formation between film layers and silicon surface after annealing, and proved that a diffusion caused by either oxygen atoms of $ZrO_2$ layers or air into the interface during annealing. Different crystal growth directions were observed with the various deposition parameters such as annealing temperature, RF power magnitude, and added $O_2$ amounts. The growth rate of $TiO_2$ thin films was increased with RF power magnitude up to 150 watt, and was then decreased due to a sputtering effect. The maximum growth rate observed at 150 watt was 1500 nm/hr. Highly oriented, crack-free, stoichiometric polycrystalline $TiO_2$<110> thin film with Rutile phase was obtained after annealing at $1000^{\circ}C$ for 1 hour.

• The Journal of Korean Society for Radiation Therapy
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• v.25 no.1
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• pp.57-67
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• 2013

Purpose: Replacing the film which used to be used for checking the set-up of the patient and dosimetry during radiation therapy, more and more EPID equipped devices are in use at present. Accordingly, this article tried to evaluated the accuracy of the position check-up and the usefulness of dosimetry during the use of an electronic portal imaging device. Materials and Methods: On 50 materials acquired with the search of Korea Society Radiotherapeutic Technology, The Korean Society for Radiation Oncology, and Pubmed using "EPID", "Portal dosimetry", "Portal image", "Dose verification", "Quality control", "Cine mode", "Quality - assurance", and "In vivo dosimetry" as indexes, the usefulness of EPID was analyzed by classifying them as history of EPID and dosimetry, set-up verification and characteristics of EPID. Results: EPID is developed from the first generation of Liquid-filled ionization chamber, through the second generation of Camera-based fluoroscopy, and to the third generation of Amorphous-silicon EPID imaging modes can be divided into EPID mode, Cine mode and Integrated mode. When evaluating absolute dose accuracy of films and EPID, it was found that EPID showed within 1% and EDR2 film showed within 3% errors. It was confirmed that EPID is better in error measurement accuracy than film. When gamma analyzing the dose distribution of the base exposure plane which was calculated from therapy planning system, and planes calculated by EDR2 film and EPID, both film and EPID showed less than 2% of pixels which exceeded 1 at gamma values (r%>1) with in the thresholds such as 3%/3 mm and 2%/2 mm respectively. For the time needed for full course QA in IMRT to compare loads, EDR2 film recorded approximately 110 minutes, and EPID recorded approximately 55 minutes. Conclusion: EPID could easily replace conventional complicated and troublesome film and ionization chamber which used to be used for dosimetry and set-up verification, and it was proved to be very efficient and accurate dosimetry device in quality assurance of IMRT (intensity modulated radiation therapy). As cine mode imaging using EPID allows locating tumors in real-time without additional dose in lung and liver which are mobile according to movements of diaphragm and in rectal cancer patients who have unstable position, it may help to implement the most optimal radiotherapy for patients.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.311-311
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• 2016

최근 고성능 디스플레이 개발이 요구되면서 기존 비정질 실리콘(a-Si)을 대체할 산화물 반도체에 대한 연구 관심이 급증하고 있다. 여러 종류의 산화물 반도체 중 a-IGZO (amorphous indium-gallium-zinc oxide)가 높은 전계효과 이동도, 저온 공정, 넓은 밴드갭으로 인한 투명성 등의 장점을 가지며 가장 연구가 활발하게 보고되고 있다. 기존에는 SG(단일 게이트) TFT가 주로 제작 되었지만 본 연구에서는 DG(이중 게이트) 구조를 적용하여 고성능의 a-IGZO 기반 박막 트랜지스터(TFT)를 구현하였다. SG mode에서는 하나의 게이트가 채널 전체 영역을 제어하지만, double gate mode에서는 상, 하부 두 개의 게이트가 동시에 채널 영역을 제어하기 때문에 채널층의 형성이 빠르게 이루어지고, 이는 TFT 스위칭 속도를 향상시킨다. 또한, 상호 모듈레이션 효과로 인해 S.S(subthreshold swing)값이 낮아질 뿐만 아니라, 상(TG), 하부 게이트(BG) 절연막의 계면 산란 현상이 줄어들기 때문에 이동도가 향상되고 누설전류 감소 및 안정성이 향상되는 효과를 얻을 수 있다. Dual gate mode로 동작을 시키면, TG(BG)에는 일정한 positive(or negative)전압을 인가하면서 BG(TG)에 전압을 가해주게 된다. 이 때, 소자의 채널층은 depletion(or enhancement) mode로 동작하여 다른 전기적인 특성에는 영향을 미치지 않으면서 문턱 전압을 쉽게 조절 할 수 있는 장점도 있다. 제작된 소자는 p-type bulk silicon 위에 thermal SiO2 산화막이 100 nm 형성된 기판을 사용하였다. 표준 RCA 클리닝을 진행한 후 BG 형성을 위해 150 nm 두께의 ITO를 증착하고, BG 절연막으로 두께의 SiO2를 300 nm 증착하였다. 이 후, 채널층 형성을 위하여 50 nm 두께의 a-IGZO를 증착하였고, 소스/드레인(S/D) 전극은 BG와 동일한 조건으로 ITO 100 nm를 증착하였다. TG 절연막은 BG 절연막과 동일한 조건에서 SiO2를 50 nm 증착하였다. TG는 S/D 증착 조건과 동일한 조건에서, 150 nm 두께로 증착 하였다. 전극 물질과, 절연막 물질은 모두 RF magnetron sputter를 이용하여 증착되었고, 또한 모든 patterning 과정은 표준 photolithography, wet etching, lift-off 공정을 통하여 이루어졌다. 후속 열처리 공정으로 퍼니스에서 질소 가스 분위기, $300^{\circ}C$ 온도에서 30 분 동안 진행하였다. 결과적으로 $9.06cm2/V{\cdot}s$, 255.7 mV/dec, $1.8{\times}106$의 전계효과 이동도, S.S, on-off ratio값을 갖는 SG와 비교하여 double gate mode에서는 $51.3cm2/V{\cdot}s$, 110.7 mV/dec, $3.2{\times}108$의 값을 나타내며 훌륭한 전기적 특성을 보였고, dual gate mode에서는 약 5.22의 coupling ratio를 나타내었다. 따라서 산화물 반도체 a-IGZO TFT의 이중게이트 구조는 우수한 전기적 특성을 나타내며 차세대 디스플레이 시장에서 훌륭한 역할을 할 것으로 기대된다.

• Journal of the Korean Ceramic Society
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• v.36 no.2
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• pp.203-209
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• 1999

LaAlO3d single phase used as the butter layer on Si wafer for YBa2Cu3O7-$\delta$ superconductor application were prepared by solid state reaction method and by self-sustaining combustion process. The microstructure and crystallity of synthesiszed LaAlO3 powder studied using scanning electron microscope (SEM) and X-ray diffractometer(XRD), specific surface area and sintering characteristics fo powder were investigated by Brunauer-Emmett-Teller (BET) method and dilatometer respectively. In solid state reaction method, it is difficult to obtain LaAlO3 single phase up to 150$0^{\circ}C$ period. However, in self-sustaining combustion process, it is to easy to do it only $650^{\circ}C$. Based on the results of analysis of dilatometer it is easier to obtain high sintering density (98.87%) in self-sustaining combustion process than in the solid state reaction method. This reason is that the average particle size prepared by self-sustaining combustion process is nano crystal size and has high specific surface are value(56.54 $m^2$/g) compared with that by solid state reaction method. Also, LaAlO3 layer on the Si wafer has been achieved by screen printing and sintering method. Even though the sintering temperature is 130$0^{\circ}C$, the phenomena of silicon out diffusion in LaAlO3/Si interphase are not observed.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.122-122
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• 1999

Graphite with its advantages of high thermal conductivity, low thermal expansion coefficient, and low elasticity, has been widely used as a structural material for high temperature. However, graphite can easily react with oxygen at even low temperature as 40$0^{\circ}C$, resulting in CO2 formation. In order to apply the graphite to high temperature structural material, therefore, it is necessary to improve its oxidation resistive property. Silicon Carbide (SiC) is a semiconductor material for high-temperature, radiation-resistant, and high power/high frequency electronic devices due to its excellent properties. Conventional chemical vapor deposited SiC films has also been widely used as a coating materials for structural applications because of its outstanding properties such as high thermal conductivity, high microhardness, good chemical resistant for oxidation. Therefore, SiC with similar thermal expansion coefficient as graphite is recently considered to be a g행 candidate material for protective coating operating at high temperature, corrosive, and high-wear environments. Due to large lattice mismatch (~50%), however, it was very difficult to grow thick SiC layer on graphite surface. In theis study, we have deposited thick SiC thin films on graphite substrates at temperature range of 700-85$0^{\circ}C$ using single molecular precursors by both thermal MOCVD and PEMOCVD methods for oxidation protection wear and tribological coating . Two organosilicon compounds such as diethylmethylsilane (EDMS), (Et)2SiH(CH3), and hexamethyldisilane (HMDS),(CH3)Si-Si(CH3)3, were utilized as single source precursors, and hydrogen and Ar were used as a bubbler and carrier gas. Polycrystalline cubic SiC protective layers in [110] direction were successfully grown on graphite substrates at temperature as low as 80$0^{\circ}C$ from HMDS by PEMOCVD. In the case of thermal MOCVD, on the other hand, only amorphous SiC layers were obtained with either HMDS or DMS at 85$0^{\circ}C$. We compared the difference of crystal quality and physical properties of the PEMOCVD was highly effective process in improving the characteristics of the a SiC protective layers grown by thermal MOCVD and PEMOCVD method and confirmed that PEMOCVD was highly effective process in improving the characteristics of the SiC layer properties compared to those grown by thermal MOCVD. The as-grown samples were characterized in situ with OES and RGA and ex situ with XRD, XPS, and SEM. The mechanical and oxidation-resistant properties have been checked. The optimum SiC film was obtained at 85$0^{\circ}C$ and RF power of 200W. The maximum deposition rate and microhardness are 2$mu extrm{m}$/h and 4,336kg/mm2 Hv, respectively. The hardness was strongly influenced with the stoichiometry of SiC protective layers.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.809-815
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• 1996

$Y_2O_3$-based metal-insulator-semiconductor (MIS) structure on p-Si(100) has been studied. Films were prepared by UHV reactive ionized cluster beam deposition (r-ICBD) system. The base pressure of the system was about $1 \times 10^{-9}$ -9/ Torr and the process pressure $2 \times 10^{-5}$ Torr in oxygen ambience. Glancing X-ray diffraction(GXRD) and in-situ reflection high energy electron diffracton(RHEED) analyses were performed to investigate the crystallinity of the films. The results show phase change from amorphous state to crystalline one with increasingqr acceleration voltage and substrate temperature. It is also found that the phase transformation from $Y_2O_3$(111)//Si(100) to $Y_2O_3$(110)//Si(100) in growing directions takes place between $500^{\circ}C$ and $700^{\circ}C$. Especially as acceleration voltage is increased, preferentially oriented crystallinity was increased. Finally under the condition of above substrate temperature $700^{\circ}C$ and acceleration voltage 5kV, the $Y_2O_3$films are found to be grown epitaxially in direction of $Y_2O_3$(1l0)//Si(100) by observation of transmission electron microscope(TEM). Capacitance-voltage and current-voltage measurements were conducted to characterize Al/$Y_2O_3$/Si MIS structure with varying acceleration voltage and substrate temperature. Deposited $Y_2O_3$ films of thickness of nearly 300$\AA$ show that the breakdown field increases to 7~8MV /cm at the same conditon of epitaxial growing. These results also coincide with XPS spectra which indicate better stoichiometric characteristic in the condition of better crystalline one. After oxidation the breakdown field increases to 13MV /cm because the MIS structure contains interface silicon oxide of about 30$\AA$. In this case the dielectric constant of only $Y_2O_3$ layer is found to be $\in$15.6. These results have demonstrated the potential of using yttrium oxide for future VLSI/ULSI gate insulator applications.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.5
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• pp.188-192
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• 2016

In this work, the SiC powders were synthesized through the carbonized matter from the mixture of silica powder and rice husks. The SiC powders, obtained from the carbothermal reduction reaction of silica and carbonized rice husks, were investigated by XRD patterns, XPS, FE-SEM and FE-TEM. In the XRD patterns, the specimens showed clearly very high strong peak of (111) plane near $35^{\circ}$ as well as weak (220) and (311) peak respectively at approximately $60^{\circ}$ and $72^{\circ}$. Under Ar atmosphere, the power synthesized from the mixture (in case of mixing ratio, 6 : 4) of carbonized rice husks and silica showed mainly cubic SiC crystalline phase showing relatively lower ratio of hexagonal phase without residual carbon in XRD pattern. In the TEM analysis, the specimen, synthesized from carbonized rice husks and silica with mixing ratio of 6 : 4 under Ar atmosphere, showed relatively fine particles under $5{\mu}m$ and a crystalline SiC phase of (100) diffraction pattern.

• The Journal of Advanced Prosthodontics
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• v.8 no.1
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• pp.1-8
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• 2016

PURPOSE. The purpose of this study was to evaluate the efficacy of two different metal conditioners for non-precious metal alloys for the bonding of porcelain to a cobalt-chromium (Co-Cr) alloy. MATERIALS AND METHODS. Disk-shaped specimens ($2.5{\times}10.0mm$) were cast with Co-Cr alloy and used as adherend materials. The bonding surfaces were polished with a 600-grid silicon carbide paper and airborne-particle abraded using $110{\mu}m$ alumina particles. Bonding specimens were fabricated by applying and firing either of the metal conditioners on the airborne-particle abraded surface, followed by firing porcelain into 5 mm in diameter and 3 mm in height. Specimens without metal conditioner were also fabricated. Shear bond strength for each group (n=8) were measured and compared (${\alpha}=.05$). Sectional view of bonding interface was observed by SEM. EDS analysis was performed to determine the chemical elements of metal conditioners and to determine the failure modes after shear test. RESULTS. There were significant differences among three groups, and two metal conditioner-applied groups showed significantly higher values compared to the non-metal conditioner group. The SEM observation of the sectional view at bonding interface revealed loose contact at porcelain-alloy surface for non-metal conditioner group, however, close contact at both alloy-metal conditioner and metal conditioner-porcelain interfaces for both metal conditioner-applied groups. All the specimens showed mixed failures. EDS analysis showed that one metal conditioner was Si-based material, and another was Ti-based material. Si-based metal conditioner showed higher bond strengths compared to the Ti-based metal conditioner, but exhibited more porous failure surface failure. CONCLUSION. Based on the results of this study, it can be stated that the application of metal conditioner is recommended for the bonding of porcelain to cobalt-chromium alloys.

• Radiation Oncology Journal
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• v.27 no.2
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• pp.91-102
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• 2009

Purpose: To compare the accuracy and efficacy of EDR2 film, a 2D ionization chamber array (MatriXX) and an amorphous silicon electronic portal imaging device (EPID) in the pre-treatment QA of IMRT. Materials and Methods: Fluence patterns, shaped as a wedge with 10 steps (segments) by a multi-leaf collimator (MLC), of reference and test IMRT fields were measured using EDR2 film, the MatriXX, and EPID. Test fields were designed to simulate leaf positioning errors. The absolute dose at a point in each step of the reference fields was measured in a water phantom with an ionization chamber and was compared to the dose obtained with the use of EDR2 film, the MatriXX and EPID. For qualitative analysis, all measured fluence patterns of both reference and test fields were compared with calculated dose maps from a radiation treatment planning system (Pinnacle, Philips, USA) using profiles and $\gamma$ evaluation with 3%/3 mm and 2%/2 mm criteria. By measurement of the time to perform QA, we compared the workload of EDR2 film, the MatriXX and EPID. Results: The percent absolute dose difference between the measured and ionization chamber dose was within 1% for the EPID, 2% for the MatriXX and 3% for EDR2 film. The percentage of pixels with $\gamma$%>1 for the 3%/3 mm and 2%/2 mm criteria was within 2% for use of both EDR2 film and the EPID. However, differences for the use of the MatriXX were seen with a maximum difference as great as 5.94% with the 2%/2 mm criteria. For the test fields, EDR2 film and EPID could detect leaf-positioning errors on the order of -3 mm and -2 mm, respectively. However it was difficult to differentiate leaf-positioning errors with the MatriXX due to its poor resolution. The approximate time to perform QA was 110 minutes for the use of EDR2 film, 80 minutes for the use of the MatriXX and approximately 55 minutes for the use of the EPID. Conclusion: This study has evaluated the accuracy and efficacy of EDR2 film, the MatriXX and EPID in the pre-treatment verification of IMRT. EDR2 film and the EPID showed better performance for accuracy, while the use of the MatriXX significantly reduced measurement and analysis times. We propose practical and useful methods to establish an effective QA system in a clinical environment.

• Journal of Dental Rehabilitation and Applied Science
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• v.23 no.3
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• pp.249-257
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• 2007

State of problem : The use of zirconium oxide all-ceramic material provides several advantages, including a high flexural strength(>1000MPa) and desirable optical properties, such as shading adaptation to the basic shades and a reduction in the layer thickness. Along with the strength of the materials, the cementation technique is also important to the clinical success of a restoration. Nevertheless, little information is available on the effect of different surface treatments on the bonding of zirconium high-crystalline ceramics and resin luting agents. Purpose : The aim of this study was to test the effects of surface treatments of zirconium on shear bond strengths between bovine teeth and a zirconia ceramic and evaluate differences among cements Material and methods : 54 sound bovine teeth extracted within a 1 months, were used. They were frozen in distilled water. These were rinsed by tap water to confirm that no granulation tissues have left. These were kept refrigerated at $4^{\circ}C$ until tested. Each tooth was placed horizontally at a plastic cylinder (diameter 20mm), and embedded in epoxy resin. Teeth were sectioned with diamond burs to expose dentin and grinded with #600 silicon carbide paper. To make sure there was no enamel left, each was observed under an optical microscope. 54 prefabricated zirconium oxide ceramic copings(Lava, 3M ESPE, USA) were assigned into 3 groups ; control, airborne-abraded with $110{\mu}m$ $Al_2O_3$ and scratched with diamond burs at 4 directions. They were cemented with a seating force of 10 ㎏ per tooth, using resin luting cement(Panavia $F^{(R)}$), resin cement(Superbond $C&B^{(R)}$), and resin modified GI cement(Rely X $Luting^{(R)}$). Those were thermocycled at $5^{\circ}C$ and $55^{\circ}C$ for 5000 cycles with a 30 second dwell time, and then shear bond strength was determined in a universal test machine(Model 4200, Instron Co., Canton, USA). The crosshead speed was 1 mm/min. The result was analyzed with one-way analysis of variance(ANOVA) and the Tukey test at a significance level of P<0.05. Results : Superbond $C&B^{(R)}$ at scratching with diamond burs showed the highest shear bond strength than others (p<.05). For Panavia $F^{(R)}$, groups of scratching and sandblasting showed significantly higher shear bond strength than control group(p<.05). For Rely X $Luting^{(R)}$, only between scratching & control group, significantly different shear bond strength was observed(p<.05). Conclusion : Within the limitation of this study, Superbond $C&B^{(R)}$ showed clinically acceptable shear bond between bovine teeth & zirconia ceramics regardless of surface treatments. For the surface treatment, scratching increased shear bond strength. Increase of shear bond strength by sandblasting with $110{\mu}m$ $Al_2O_3$ was not statistically different.