• 열처리공학회지
• /
• 제24권5호
• /
• pp.251-261
• /
• 2011

The changes in microstructure and texture during annealing were examined in a series of 0.015% C-1.5% Mn cold-rolled sheet steels with 0~0.5% Mo. Orientation distribution function data were calculated from the (110), (200), (211) pole figures determined on the rolled plane of cold-rolled and annealed steel sheets. Regardless of Mo content and annealing conditions, martensite volume fraction was less than 1.0%, not affecting the texture evolution. Textural change at the cooling stage after heating at $820^{\circ}C$ for 67 sec was not observed. Increasing the Mo content and annealing temperature markedly strengthened the intensities of ${\gamma}$-fiber texture, resulting in the increase in $r_m$ value. The desirable texture evolution for deep drawability in the 0.5% Mo steel may be mainly caused by the grain refining effect of Mo carbide in the hot-rolled steel sheet.

• 한국표면공학회지
• /
• 제25권1호
• /
• pp.24-33
• /
• 1992

Cr-N films were deposited on low-carbon steel sheets by the reactive arc-induced ion plating (AIIP). The influence of the deposition conditions (nitrogen pressure and substrate bias voltage) on the crystal orientation, morphology and microhardness of the Cr-N films has been investigated using x-ray diffractometer and scanning electron microscope. The impurities and contaminations on the surface and at the interface, and the layer-by-layer compositions of the film have been analyzed using scanning Auger multiprobe (SAM) and glow discharge spectroscope (GDS). The mixed state of Cr and Cr₂N turned out to have a fine fibrous structure. The Cr₂N films were deposited at a wide range of nitrogen flow rates. The orientations of Cr₂N films were mainly (110) and (111), and the intensity of the (111) peak increased as the substrate bias voltage increased. The microstructure of the Cr₂N film was dense and no columnar structure was observed. The films in the mixed state of Cr₂N and CrN were also dense without columnar structure. The maximum microhardness of the Cr-N films was 2400 kg/㎟ at 10 gf load.

• 한국전기전자재료학회논문지
• /
• 제22권1호
• /
• pp.29-34
• /
• 2009

PLZT thin films were deposited on platinized silicon (Pt/$TiSiO_2$/Si) substrate by RF magnetron sputtering. A $TiO_2$ buffer layer was fabricated, prior to deposition of PLZT films. the layer was strongly affected the crystallographic orientation of the PLZT films. X-ray diffraction was performed on the films to study the crystallization of the films as various substrate temperatures (Ts). According to increasing Ts, preferred orientation of films was changed (110) plane to (111) plane. The ferroelectric, dielectric and electrical properties of the films were also investigated in detail as increased substrate temperatures. The PLZT films deposited at $400^{\circ}C$ showed good ferroelectric properties with the remnant polarization of $15.8{\mu}C/cm^2$ and leakage current of $5.4{\times}10^{-9}\;A/cm^2$.

• 한국전기전자재료학회논문지
• /
• 제13권10호
• /
• pp.828-833
• /
• 2000

Growth characteristics and microstructure of AIN thin films grown by plasma assisted molecular beam epitaxy on Si substrates have been investigated. Growing temperature and substrate orientation were chosen as major variables of the experiment. Reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy/diffraction (TEM/TED) techniques were employed to characterize the micorstructure of the films. On Si(100) substrates, AlN thin films were grown along the hexagonal c-axis preferred orientation at temperature range 850-90$0^{\circ}C$. However on Si(111), the AlN films were epitaxially grown with directional coherency in AlN(0001)/Si(111), AlN(1100)/Si(110), and AlN(1120)/Si(112) at 85$0^{\circ}C$ and the epitaxial coherencry seemed to be slightly distorted with increasing temperature. The microstructure of AlN thin films on Si(111) substrates showed that the films include a lot of crystal defects and there exist micro-gaps among the columns.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2000년도 하계학술대회 논문집
• /
• pp.111-114
• /
• 2000

Growth characteristics and microstructure of AlN thin films grown by plasma assisted molecular beam epitaxy on Si substrates have been investigated. Growing temperature and substrate orientation were chosen as major variables of the experiment. Reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy/diffraction (TEM/TED) techniques were employed to characterize the microstructure of the films. On Si(100) substrates, AlN thin films were grown along the hexagonal c-axis preferred orientation at temperature range 850-90$0^{\circ}C$. However on Si(111), the AlN films were epitaxially grown with directional coherency in AlN(0001)/Si(111), AlN(1100)/Si(110), and AlN(1120)/Si(112) at 85$0^{\circ}C$ and the epitaxial coherencry seemed to be slightly distorted with increasing temperature. The microstructure of AlN thin films on Si(111) substrates showed that the films include a lot of crystal defects and there exist micro-gaps among the columns.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.243.2-243.2
• /
• 2016

Tungsten (W) is recently gaining attention as a potential candidate to replace Cu in semiconductor metallization due to its expected improvement in material reliability and reduced resistivity size effect. In this study, the impact of electron scattering at grain boundaries in a polycrystalline W thin film was investigated. Two nominally 300 nm-thick films, a (110)-oriented single crystal film and a (110)-textured polycrystalline W film, were prepared onto (11-20) Al2O3 substrate and thermally oxidized Si substrate, respectively in identical fabrication conditions. The lateral grain size for the polycrystalline film was determined to be $119{\pm}7nm$ by TEM-based orientation mapping technique. The film thickness was chosen to significantly exceed the electron mean free path in W (16.1 and 77.7 nm at 293 and 4.2 K, respectively), which allows the impact of surface scattering on film resistivity to be negligible. Then, the difference in the resistivity of the two films can be attributed to grain boundary scattering. quantitative analyses were performed by employing the Mayadas-Shatzkes (MS) model, where the grain boundary reflection coefficient was determined to be $0.42{\pm}0.02$ and $0.40{\pm}0.02$ at 293 K and 4.2 K, respectively.

• 소성∙가공
• /
• 제29권1호
• /
• pp.27-36
• /
• 2020

The Goss texture component of {110}<001> is well known as one of the best texture components to improve the magnetic properties of electrical steel sheets. The small amount of the Goss texture component is obtained at the surface of the steel sheet by shear deformation due to friction between the steel sheet and the roll during conventional symmetric rolling. This study aims to identify a method to obtain high intensity of the Goss texture component not only at the surface but in the whole layer of the steel sheet by shear deformation of asymmetric rolling. Low carbon steel sheets, which have different initial texture, were asymmetrically rolled by about 50%, 70%, and 80%. The pole figures of the top, center, and bottom layers of the initial and asymmetrically rolled low carbon steel sheets were measured by an X-ray diffractometer. Based on the measured pole figures of these samples, the intensities of the main texture components were analyzed for the initial and asymmetrically rolled low carbon steel sheets. As a result, the initial low carbon steel sheet with the γ-fiber component showed a higher intensity of the Goss texture component in the whole layer than the steel sheet with other texture components after asymmetric rolling.

• 한국결정성장학회지
• /
• 제11권3호
• /
• pp.111-114
• /
• 2001

초음파분무를 이용한 MOCVD법으로 전도성 산화물 (Ba,Sr)RuO$_3$ 박막을 Si(100) wafer위에 제조하였다. XRD 측정 결과 BSR박막은 (110) 배향성을 가지고 성장하였으며 500$^{\circ}C$ 이상의 증착온도에서 결정성장이 양호하였다. Ba과 Sr의 조성비의 차이에 따라 AFM 측정결과 Ba에 대한 Sr의 비가 증가함에 따라 grain크기가 증가하였다. 또한 비저항의 측정을 통해 Ba에 대해 Sr의 비의 증가에 따라 BSR 박막의 비저항이 415에서 261$\mu$$\Omega$${\cdot}$cm로 감소하였다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집
• /
• pp.519-522
• /
• 2002

Ag (silver) can be used for YBa$_2$Cu$_3$O$\_$7-$\delta$/(YBCO) coated conductor tape as the substrate on which YBCO can be deposited directly because of the chemical compatibility of Ag with YBCO. We have fabricated rolled Ag tapes with various total reduction ratios and different thicknesses. As-rolled Ag tape was recrystallized at 750$^{\circ}C$ for 30min in air and vacuum of 10$\^$-3/ torr. The orientation distribution functions (ODF) calculated from three x-ray pole figures of as-rolled and recrystallized tapes were analysed. As the total reduction ratio increased from 94 to 98%, the development of {110}texture of as-rolled Ag improved. Under the present experimental condition, maximum {110}ODF value of Ag tape was obtained for the sample with 94% total reduction ratio which was recrystallized at 750$^{\circ}C$ for 30min in vacuum of 10$\^$-3/ torr.

• 비파괴검사학회지
• /
• 제35권6호
• /
• pp.381-388
• /
• 2015

The speed and oscillation directions of elastic waves propagating in the [ab0] direction of a silicon single crystal were obtained by solving Christoffel's equation. It was found that the quasi waves propagate in the off-principal axis, and hence, the directions of the phase and group velocities are not the same. The maximum deviation of the two directions was $7.2^{\circ}$. Two modes of the pure transverse waves propagate in the [110] direction with different speeds, and hence, two peaks were observed in the pulse echo signal. The amplitude ratio of the two peaks was dependent on the initial oscillating direction of the incident wave. The pure and quasi-transverse waves propagate in the [210] direction, and the oscillation directions of these waves are perpendicular to each other. The skewing angle of the quasi wave was calculated as $7.14^{\circ}$, and it was measured as $9.76^{\circ}$. The amplitude decomposition in the [210] direction was similar to that in the [110] direction, since the oscillation directions of these waves are perpendicular to each other. These results offer useful information in measuring the crystal orientation of the silicon single crystal.