• Korean Journal of Materials Research
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• v.4 no.4
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• pp.385-392
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• 1994

The morphology variat~on of diamond thin films, grown by microwave plasma chem~cal vapor deposition, was investigated. With increasing substrate temperature from $550^{\circ}C$ to $750^{\circ}C$, the film morphology was changed from {111} to {100}, and then to cauliflower. The nondiamond components in the film increased with increasing temperature. Micro Raman spectrum suggested that the nondiamond components might exist along the boundaries of d~amond particles. The texture of diamond films, analyzed by X-ray diffraction, was varied from random orientation to <100> , and finally to <110> with increasing substrate temperature.

• Journal of the Korean Ceramic Society
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• v.33 no.4
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• pp.441-447
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• 1996

Sb doped SnO2(ATO:Antinomy doped Tin Oxide) thin films were prepared by a DC magnetron spttuering method using oxide target and the deposition characteristics were investigated. The experimental conditions are as follows :Ar flow rate : 100 sccm oxygen flow rates ; 0-100 sccm deposition temperature ; 250 -40$0^{\circ}C$ DC sputter powder ; 150~550 W and sputtering pressure ; ; 2~7 mTorr. Deposition rate greatly depends not on the deposition temperature but on the reaction pressure oxygen flow rate and sputter power,. when the sputter powder is low ATO thin films with (110) preferred orientation are deposited. And when the sputter power is high (110) prefered orientation appeares with decreasing of oxygen flow rate and increasing of suputte-ring pressure.

• Journal of the Korean institute of surface engineering
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• v.27 no.5
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• pp.285-291
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• 1994

The effects of pulse current parameters on the composition and the microstructure of Pd-Ni alloy electrodeposits were studied. The cathode current efficiency of p.c. electrolysis conditions decreased with increasing both mean and peak current density and was lower than those under D.C. electrolysis condition. Palladium content of Pd-Ni alloy increased with increasing both peak current density and on-time, while it decreased with increasing mean current density and duty cycle. The preferred orientation of Pd-Ni alloys changed with increasing mean current density in the sequence of (111)+(110).(100) or (110)longrightarrow(111)longrightarrow(100) or random distribution of crystal structure. The surface morphology of Pd-Ni alloy changed mainly according to the mean current density and was related to the preferred orientation.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.182.2-182.2
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• 2007

• Journal of the Korean Ceramic Society
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• v.31 no.4
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• pp.457-463
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• 1994

The growth condition of highly oriented textured diamond film on a (100) Si substrate was investigated as a function of texture orientation. The growth process consisted of biased enhanced nucleation (BEN) and texture growth. The substrate was under the plasma of 6% CH4-94% H2 with negative bias of 200V during the BEN which grounded during the texture growth. The texture orintation changed from <100> to <110> by increasing substrate temperature. The nearly perfect match between textured diamond grains and the Si substrate could be obtained under the condition of <100> texture. The degree of tilt mismatch increased with the increase of deviation of texture orientation from <100>. The degree of twist mismatch appeared to increase abruptly beyond the critical deviation of texture orientation from <100> because the nuclei having the same orientation as the substrate were no more preferred grains for texture formation.

• Journal of the Korean institute of surface engineering
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• v.35 no.1
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• pp.33-38
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• 2002

For the evaluation of nucleation and growth behaviors influenced by substrate properties, such as surface energy, structure and electrical properties, chromium nitride films (CrN) were deposited on various substrates (glass, AISI 1040 steel and Si (110) by unbalanced magnetron sputtering. X-ray diffraction and Atomic Force Microscopy (AFM) were used to study the microstructure and grain growth as a function of deposition time. The diffraction patterns of CrN thin films deposited on Si (110) exhibited crystalline structure with highly preferred orientation of (200) plane parallel to the substrate, whereas the films deposited on glass and AISI 1040 exhibited preferred orientations (200) and minor orientation (111), (311) or (220) plane. The orientation of films deposited both on glass and Si substrates did not depend on the bias voltage (Vs). The grain growth and structure of film deposited on AISI 1040 steel substrate are strongly influenced by the substrate bias in comparison with that deposited onto glass and Si substrates. The differences in the structure and grain growth of CrN films deposited onto different substrates are predominantly related to the properties of the substrate (structure and electrical conductivity).

• Journal of the Korean Geographical Society
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• v.50 no.1
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• pp.37-52
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• 2015

The purpose of this study is to elucidate the traits of the spatial orientation of urban residents. The analysis materials are the 110 rough maps which have been collected for the last ten years in Yeonsugu, Incheon metropolitan. The urbanites' spatial orientation are analysed from an aspect of the orientation elements and the orientation frames respectively. As a result, the urban dwellers make use of five elements - path, node, district, landmark, and language clue for their spatial orientation. Again the orientation frames of the urban people are investigated in terms of locating and directing in space. In regard to the former, they tend relatively to depend on horizontal axes based on broad streets and to prefer to position at the center on coordinate system. With reference to the latter, they show to be north-at-the-top directed tendency and to hold higher proportion of exocentric perspective than egocentric. Consequently urban residents tend to form spatial orientation with using five spatial elements, leaning horizontal axis, positioning themselves at the central part of coordinates, directing toward north-at-the-top through exocentric perspective.

• Journal of the Korean Ceramic Society
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• v.41 no.2
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• pp.106-110
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• 2004

Nickel oxide (NiO) thin films were prepared on Si(100) substrates at room temperature by RF magnetron sputtering using a NiO target. The effects of oxygen flow ratio for the plasma gas on the preferred orientation and surface morphology of the NiO films were investigated. Highly crystalline NiO film with (100) orientation was obtained when it was deposited in pure Ar gas. For NiO film deposited in pure O$_2$ gas, on the other hand, the orientation of the film changed from (100) to (111) and its deposition rate decreased. The origin of the preferred orientation of the films was discussed. NiO films also showed different surface morphologies and roughnesses with the oxygen flow ratio.

• The Korean Journal of Ceramics
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• v.6 no.3
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• pp.240-244
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• 2000

The three-dimensional orientation distribution function of a conical shaped tungsten liner prepared by the thermo-mechanical forming process was analyzed by 1.525$\AA$ neutrons to carry out the Rietveld refinement. The pole figure data of three reflections, (110)(220) and (211) were measured. The orientation distribution functions for the normal and radial directions were calculated by the WIMV method. The inverse pole figures of the normal and radial directions were obtained from their orientation distribution functions. The Rietveld refinement was performed with the RIETAN program that was slightly modified for the description of preferred orientation effect. We could successfully do the Rietveld refinement of the strongly textured tungsten liner by applying the pole density of each reflection obtained from the inverse pole figure to the calculated diffraction pattern. The correction method of preferred orientation effect based on the inverse pole figures showed a good improvement over the semi-empirical texture correction based on the direct usage of simple empirical functions.

• Proceeding of EDISON Challenge
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• 2017.03a
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• pp.412-416
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• 2017

CMOS device에서 off leakage current로 인한 power dissipation 문제는 미래 소자에 주어진 주요한 과제이다. Nanowire FET은 이러한 문제를 해결할 주요 미래소자로 각광받고있다. 하지만 nanowire FET을 공정할 때 채널 에칭을 완벽한 원형 구조로 가지는 것이 어렵기 때문에 타원형으로 시뮬레이션을 진행해 볼 필요성이 있다. 본 논문에서는 nanowire의 aspect ratio, crystal orientation의 변화에 따른 nanowire FET의 전압-전류 특성 및 transport 특성을 관찰하는 연구를 진행하였다. 시뮬레이션 결과, [100] 방향은 완벽한 원형구조에서 최적인 반면에 [110] 방향은 타원형으로 모델링함에 있어서 장점이 있는 것으로 나타났다.