• 한국결정성장학회지
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• 제11권1호
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• pp.27-32
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• 2001

본 연구에서는 금속 알콕시드를 이용하여 졸-겔법으로 0.9PMN-0.1PT 분말을 합성하는데 있어 과량으로 첨가되는 ${Mg(OC_{2}H_{5})}_2$와 ${Pb(CH_{3}COO)}_2.3H_{2}O$ 등이 페로브스카이트 상의 생성량에 미치는 영향을 검토하였다. 그결과 합성된 겔을 열처리할 때 하소 온도가 증가함에 따라 페로브스카이트 상의 생성량은 증가하였으며 $850^{\circ}C$에서 4시간 유지하여 하소한 경우 페로브스카이트 생성량이 최대인 것으로 나타났다. 0.9PMN-0.1PT 조성에 ${Mg(OC_{2}H_{5})}_2$를 5 wt% 과잉 첨가한 합성 분말에서 페로브스카이트 단일상을 얻을 수 있었다.

• 공업화학
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• 제10권3호
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• pp.331-335
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• 1999

진이급속 산화물은 전기화학적 산소 발생/환원에 대한 bifunctional 촉매효과가 있어 금속-공기 이차전지와 같은 에너지 저장기술 개발에 연구대상이 되어왔다. Amorphous citrate precursor법을 이용하여 perovskite 구조를 갖는 La-Ca-Co 산화물과 pyrochlore 구조를 갖는 Pb-Ru 산화물을 제조하고, 이후 열처리법으로 표면적이 큰 전이금속 산화물 촉매분말을 제조하였다. PTFE 결합 기체확산형 전극의 충방전 실험을 통하여 전기화학적 산소발생/환원에 대한 좋은 촉매능을 가짐을 확인하였고, ${\pm}25mA/cm^2$의 전류밀도를 가하고 공기를 공급하면서 충방전 실험한 결과 100시간 이내에서 두촉매분말 모두 안정하였다. ACP법으로 제조한 perovskite 구조의 La0.6Ca0.4CoO3과 pyrochlore 구조의 Pb2Ru2O6가 이차전지용 공기전극 재료로 사용할 수 있음을 확인하였다.

• Bulletin of the Korean Chemical Society
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• 제15권3호
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• pp.256-260
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• 1994

Perovskite type oxides of the $Sr_xHo_{1-x}FeO_{3-y}$ system with compositions of x=0.00, 0.25, 0.50, 0.75, and 1.00 have been prepared at 1200$^{\circ}$C in air. X-ray powder diffraction assigns the compositions with x=0.00 and 0.25 to the orthorhombic crystal system and those with x=0.50, 0.75, and 1.00 to the cubic one. The unit cell volumes of solid solutions increase with x in the system. Nonstoichiometric chemical formulas were determined by Mohr salt titration. The mole ratio of $Fe^{4+}$ ions to total iron ions and the concentration of oxygen ion vacancies increase with x. Mossbauer spectra for the compositions of x= 0.00, 0.25, and 0.50 show six lines indicating the presence of $Fe^{3+}$ ions in the octahedral site. However, the presence of $Fe^{4+}$ ions may also be detected in the spectra for the compositions with x=0.25 and x=0.50. In the compositions with x=0.75 and 1.00, single line patterns show also the mixed valence state of $Fe^{3+}$ and $Fe^{4+}$ ions. The electrical conductivity in the temperature range of -100$^{\circ}$C to 100$^{\circ}$C under atmospheric air pressure increases sharply with x but the activation energy decreases with the mole ratio of $Fe^{4+}$ ion. The conduction mechanism of the perovskite system seems to be hopping of the conduction electrons between the mixed valence iron ions.

• 한국결정성장학회지
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• 제10권3호
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• pp.205-210
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• 2000

초음파분무를 이용한 MOCVD법으로 강유전체 $PbTiO_3$박막을 Si(100) wafer와 ITO-coated glass위에 제조하였다 Si 기판 위에 증착된 박막으로부터, 출발원료의 농도비(Ti/Pb)가 1.2일 때, 단일 perovskite 상을 얻을 수 있었다. ITO-coated glass 위에 증착된 박막은 Si기판 위에 제조된 박막보다 박막의 성장속도가 더 빠르며, 기판온도를 $530^{\circ}C$부터 $570^{\circ}C$까지 증가시켰을 때, 결절성과 입자 크기의 증가에 의해 유전상수는 증가하였다. $570^{\circ}C$에서의 유전상수 및 유전손실 값은 각각 205, 0.016을 나타내었다. 기판온도가 $600^{\circ}C$ 이상인 경우, 유전상수가 감소되는 경향을 보였다.

• 한국진공학회지
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• 제13권4호
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• pp.145-149
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• 2004

RF magnetron sputtering 방법으로 miscut된 기판을 이용해서 양질의 압전 산화물 에피 박막을 제작하였다. 박막은 (001) $SrTiO_3$ 기판 위에 증착되었으며, (100) 방향으로 $0^{\circ}$-$8^{\circ}$의 miscut 각도를 갖는 기판들을 사용했다. $4^{\circ}$이상의 큰 miscut 각도를 갖는 기판 위에 성장된 박막의 경우, x-ray diffraction (XRD) 패턴은 perovskite 상의 순수한 PMN-PT 피크만을 보여 주었으며, wavelength dispersive x-ray fluorescence spectroscopy를 이용해서 분석한 조성비는 stoichiometric한 조성비에 가까운 값을 보여주었다. 반면에, miscut 각도가 없는 기판 위에 증착된 박막의 경우, 2차상인 pyrochlore 상을 포함하는 XRD 패턴을 보여주었다. $8^{\circ}$ 기판 위에 성장된 박막의 경우 실온에서 20$\mu$C/$\textrm{cm}^2$라는 높은 잔류분극 값을 보여주었다

• 마이크로전자및패키징학회지
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• 제20권4호
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• pp.25-30
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• 2013

Pb-free ferroelectric $(Na_{0.5}Bi_{0.5})TiO_3$ (NBT) thin films were prepared by a modified sol-gel process. Their structural, dielectric and pyroelectric properties were investigated as a function of the excess Na/Bi ratio and the annealing temperature. In the case of thin films containing no excess Na and Bi, only partial amounts of the perovskite NBT were crystallized, where the films consisted mainly of the pyrochlore phase of $Bi_2Ti_2O_7$ for annealing conditions of $600{\sim}800^{\circ}C$. With increasing excess Na/Bi ratio, the proportion of the perovskite phase effectively increased due to the compensation of the volatile Na and Bi components. For a Na/Bi ratio of 2.0, the thin film with single NBT perovskite phase was obtained within XRD detection limit after annealing at $700^{\circ}C$ for 10 min and it showed the excellent dielectric properties, ${\varepsilon}r$ of ~550 and tan ${\delta}$ of 0.03. While these properties were degraded for Na/Bi ratio of 2.5 despite the existence of pure perovskite phase. The NBT thin film with Na/Bi ratio of 2.0 are also promising candidates for applications requiring pyroelectric devices because it was found to have pyroelectric coefficients of $1.3{\sim}7nC/cm^2K$ in the temperature range of $30{\sim}100^{\circ}C$.

• 한국세라믹학회지
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• 제43권11호
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• pp.715-723
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• 2006

Perovskite oxide materials are very important for the electronics industry, because they exhibit promising properties. With an interest in the obvious applications, significant effort has been invested in the growth of highly crystalline epitaxial perovskite oxide thin films in our laboratory. And the desired structure of films was formed to achieve excellent properties. $Y_1Ba_2Cu_3O_{7-x}$ (YBCO) superconducting thin films were simultaneously deposited on both sides of 3 inch wafer by inverted cylindrical sputtering. Values of microwave surface resistance R$_2$ (75 K, 145 GHz, 0 T) smaller than 100 m$\Omega$ were reached over the whole area of YBCO thin films by pre-seeded a self-template layer. For implementation of voltage tunable high-quality varactor, A tri-layer structured SrTiO$_3$ (STO) thin films with different tetragonal distortion degree was prepared in order to simultaneously achieve a large relative capacitance change and a small dielectric loss. Highly a-axis textured $Ba_{0.65}Sr_{0.35}TiO_3$ (BST65/35) thin films was grown on Pt/Ti/SiO$_2$/Si substrate for monolithic bolometers by introducing $Ba_{0.65}Sr_{0.35}RuO_3$ (BSR65/35) thin films as buffer layer. With the buffer layer, the leakage current density of BST65/35 thin films were greatly reduced, and the pyroelectric coefficient of $7.6\times10_{-7}$ C $cm^{-2}$ $K^{-1}$ was achieved at 6 V/$\mu$m bias and room temperature.

• E2M - 전기 전자와 첨단 소재
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• 제7권6호
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• pp.496-503
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• 1994

In recent years Sol-Gel processing provides an interesting alternative method for the fabrication of ferroelectric thin layers and powder. PZT powder was prepared from an alkoxide-based solution by a Sol-Gel method. Gelation of synthesized complex solutions, microstructure, thermal analysis and crystallization behaviors of the calcined powder were studied in accordance with a water content and a catalyst. Especially gelation and crystallization behavior were analysed with the change of pH. The gelation time decreased as the pH of the mixed solution increased. For PZT powder with 650.deg. C heat treatment, 100% perovskite phase was formed by using either acidic or basic catalyst. By using either acidic or basic catalyst, we were able to get very fine powders of uniform shape with an average particle size of 0.8-1.mu.m.

• The Korean Journal of Ceramics
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• 제2권1호
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• pp.48-53
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• 1996

Ion beam assisted crystallization behavior of sol-gel derived $PbTiO_3$ thin films, deposited on bare silicon(100) substrates by spin-casting method, has been investigated. Ar ion bombardment was directly conducted on the spincoated film surface with or without heating the film from room temperature to $300^{\circ}C$. Ion dose was changed from $5{\times}10^{15}$ to $7.5{\times}10^{16}$ $Ar^-/cm^2$. Formation of (110) oriented perovskite phase was obseerved with ion dose above $5{\times}10^{16}\; Ar^+/cm^2$. Crystallization of $PbTiO_3$ thin film could be enhanced with increasing the Air ion dose, or heating the substrate during ion bombardment. Crystallization of the $PbTiO_3$ films by ion bombardment was related to the local heating effect during ion bombardment.

• 한국세라믹학회지
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• 제29권3호
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• pp.216-222
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• 1992

PLZT thin films were prepared using sol-gel spin coating. The films mainly consisted of perovskite phase when heat treated at 600$^{\circ}C$ and in O2 or air atmosphere for 2 hours after 7 coating cycles. Cracks were formed when smaller than after 9 coating cycles. When ITO interlayer existed between Corning 7059 glass substrate and the film, cracks were not formed after 9 coating cycles, but cracks were formed after 11 coating cycles because of large volume change of the film contracting on the substrate during the heat treatment. In the observation of microstructure, the thin films have perovskite phase of about 2 $\mu\textrm{m}$ grain size and pyrochlore phase of 100∼200${\AA}$ grain size.