• Title/Summary/Keyword: (00c) plane

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Crystallographic Characterization of the (Bi, La)4Ti3O12 Film by High-Resolution Electron Microscopy (고분해능 전자현미경법을 이용한 (Bi, La)4Ti3O12 박막의 결정학적 특성 평가)

  • Lee, Doek-Won;Yang, Jun-Mo;Park, Tae-Su;Kim, Nam-Kyung;Yeom, Seung-Jin;Park, Ju-Chul;Lee, Soun-Young;Park, Sung-Wook
    • Korean Journal of Materials Research
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    • v.13 no.7
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    • pp.478-483
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    • 2003
  • The crystallographic characteristics of the $(Bi, La)_4$$Ti_3$$O_{12}$ thin film, which is considered as an applicable dielectrics in the ferroelectric RAM device due to a low crystallization temperature and a good fatigue property, were investigated at the atomic scale by high resolution transmission electron microscopy and the high resolution Z-contrast technique. The analysis showed that a (00c) preferred orientation and a crystallization of the film were enhanced with the diffraction intensity increase of the (006) and (008) plane as the annealing temperature increased. It indicated a change of the atomic arrangement in the (00c) plane. Stacking faults on the (00c) plane were also observed. Through the comparison of the high-resolution Z-contrast image and the $Bi_4$$Ti_3$$O_{12}$ atomic model, it was evaluated that the intensity of the Bi atom was different according to the atomic plane, and it was attributed to a substitution of La atom for Bi at the specific atom position.

Thermal Expansion Coefficient Measurement of STS430 at High Temperature by In-plane ESPI (In-plane ESPI를 이용한 고온에서 STS430의 열팽창계수 측정)

  • 김경석;강기수;장호섭
    • Journal of the Korean Society for Precision Engineering
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    • v.21 no.11
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    • pp.69-74
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    • 2004
  • This paper presents ESPI system for the measurement of thermal expansion coefficient of STS430 up to 1,00$0^{\circ}C$ . Existing methods, strain gauge and moire have the limitation of contact to object and do not supply the coefficient up to 80$0^{\circ}C$ . There needs to measure the data up to 80$0^{\circ}C$, because heat resistant materials have high melting temperature up to 1,000'E In previous studies related to thermal strain analysis, the quantitative results have not reported by ESPI at high temperature, yet. In-plane ESPI and vacuum chamber for the reduction of air turbulence and oxidation are designed for the measurement of the coefficient up to 1,00$0^{\circ}C$ and speckle correlation fringe pattern images are processed by commercial image filtering tool-smoothing, thinning and enhancement- to obtain quantitative results, which is compared with references data. The comparison shows two data are agreed within 4.1% blow $600^{\circ}C$ however, there is some difference up to $600^{\circ}C$. Also, the incremental ratio of the coefficient is changed up to 80$0^{\circ}C$ . The reason is the phase transformation of STS430 probably begins at 80$0^{\circ}C$

Electronic Structures and Magnetism of MgCCo3(001) (MgCCo3(001)표면의 전자구조와 자성)

  • Jin, Ying-Jiu;Lee, Jae-Il
    • Journal of the Korean Magnetics Society
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    • v.14 no.3
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    • pp.94-98
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    • 2004
  • The electronic structures and magnetism of MgCCo$_3$(001) surface terminated by the plane with the MgCo-Term (Mg, Co terminated) and the CCo-Term (C, Co terminated) were investigated using the all-electron full-potential linearized augmented Plane-wave method. For the MgCo-Term, the magnetic moment of Co atom of the surface is strongly enhanced to 1.00$\mu$$_{B}$, while the magnetic moment of Co atom of the subsurface is similar to that of the center layers. For the CCo-Term, the magnetic moments of Co atoms are enhanced to 0.75 and 0.80$\mu$$_{B}$ for the surface and subsurface layers, respectively. The magnetic moments of C and Mg atoms are coupled antiferromagnetically to that of the neighbour Co atoms. From the calculated density of states, we see that the enhancements of magnetic moments of Co atoms are closely related to localization of the Co-3d states.

THE QUARTIC MOMENT PROBLEM

  • Li, Chun-Ji;Lee, Sang-Hoon
    • Journal of the Korean Mathematical Society
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    • v.42 no.4
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    • pp.723-747
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    • 2005
  • In this paper, we consider the quartic moment problem suggested by Curto-Fialkow[6]. Given complex numbers $\gamma{\equiv}{\gamma}^{(4)}\;:\;{\gamma00},\;{\gamma01},\;{\gamma10},\;{\gamma01},\;{\gamma11},\;{\gamma20},\;{\gamma03},\;{\gamma12},\;{\gamma21},\;{\gamma30},\;{\gamma04},\;{\gamma13},\;{\gamma22},\;{\gamma31},\;{\gamma40}$, with ${\gamma00},\;>0\;and\;{\gamma}_{ji}={\gamma}_{ij}$ we discuss the conditions for the existence of a positive Borel measure ${\mu}$, supported in the complex plane C such that ${\gamma}_{ij}=\int\;\={z}^i\;z^j\;d{\mu}(0{\leq}i+j{\leq}4)$. We obtain sufficient conditions for flat extension of the quartic moment matrix M(2). Moreover, we examine the existence of flat extensions for nonsingular positive quartic moment matrices M(2).

A NOTE ON SINGULAR QUARTIC MOMENT PROBLEM

  • Li, Chun-Ji
    • Bulletin of the Korean Mathematical Society
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    • v.37 no.1
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    • pp.91-102
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    • 2000
  • Let ${\gamma}{\equiv}{\gamma}^{(2n)}$ denote a sequence of complex numbers ${\gamma}{00},{\gamma}{01},\cdots,{\gamma}0, 2n,...,{\gamma}{2n},0\;with\; {\gamma}{00}\;>\;0,{\gamma}{ji}={{\overline}{\gamma_{ij}}}$,and let K denote a closed subset of the complex plane C. The truncated K complex moment problem entails finding a positive Borel measure $\mu$ such that ${\gamma}{ij}={\int}{{\overline}{z}}^{i}z^{j}d{\mu}\;(0{\leq}\;i+j\;{\leq}\;2n)$ and supp ${\mu}{\subseteq}\;K$. If n=2, then is called the quartic moment problem. In this paper, we give partial solutions for the singular quartic moment problem with rank M(2)=5 and ${{\overline}{Z}}Z{\in}\;<1,Z,{{\overline}{Z}},Z^{2},{{\overline}{Z}}^2>$.

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Deposition condition of NiO deposited on biaxially textured Ni by a MOCVD process (2축 정렬된 Ni 위에 MOCVD법에 의한 NiO의 증착조건)

  • 선종원;김형섭;지봉기;박해웅;홍계원;박순동;정충환;전병혁;김찬중
    • Progress in Superconductivity and Cryogenics
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    • v.4 no.2
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    • pp.5-10
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    • 2002
  • Deposition condition of NiO that is one of Possible buffer layers for YBCO coated conductors was studied. NiO was deposited on textured Ni substrates by a MOCVD (metal-organic chemical vapor deposition) method. The degree of texture, and the surface roughness were analyzed by X-ray Pole figure, atomic force microscope and scanning electron microscope. The (111) and (200) textures were competitively developed , depending on an oxygen partial Pressure(PO2) and deposition temperature (Tp). The (200) textured NiO layer was deposited at Tp=450~47$0^{\circ}C$ and PO2= 1.67 Torr Out-of-Plane ($\omega$-scan) and in-plane ($\Phi$-scan) textures of the (200) NiO films were as good as 10.34$^{\circ}$ and 10.00$^{\circ}$ respectively The AFM surface roughness of NiO was in the range of 3~4.5 nm at PO2=0.91~3.34 Torr and at Tp=47$0^{\circ}C$ , and in the range of 3~13 nm at TP=450~53$0^{\circ}C$ and at PO2=1.67 Torr.

Texture and surface analysis of NiO prepared on biaxially textured Ni substrates by MOCVD method (2축 정렬된 Ni 선재 위에 MOCVD법에 의한 NiO의 조직 및 표면 분석)

  • 선종원;김형섭;지봉기;박해웅;홍계원;박순동;정충환;전병혁;김찬중
    • Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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    • 2002.02a
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    • pp.119-122
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    • 2002
  • The NiO buffer layers for YBCO coated conductor were prepared on textured Ni substrates by MOCVD method and the degree of texturizing and the surface roughness were analyzed X-ray pole figure and AFM and SEM. Processing variables were oxygen partial pressure and substrate temperature. (200) textured NiO layer was formed at 450~$470^{\circ}C$ and oxygen partial pressure of 1.67 Torr. Out-of-plane($\omega$-scan) and in-plane($\Phi$-scan) texture were $10.34^{\circ}$ and $10.00^{\circ}$ respectively. The surface roughness estimated by atomic force microscopy was in the range of 3.1~4.6 nm.

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Control of a- and c-plane Preferential Orientations of p-type CuCrO2 Thin Films

  • Kim, Se-Yun;Seong, Sang-Yun;Jo, Gwang-Min;Hong, Hyo-Gi;Kim, Jeong-Ju;Lee, Jun-Hyeong;Heo, Yeong-U
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.119-120
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    • 2011
  • Kawazoe는 1997년 p-type TOS를 만들기 위해서는 3가지가 충족되어야 한다고 언급한바 있다. 첫 번째, 가시광영역에서 투명하기 위해서 cation의 d10s0이 가득 차야 한다. 가득 차지 않은 d10 shell은 광 흡수가 가능하여 투과도를 떨어뜨린다. N-type을 예로 들어 ZnO, TiO, In2O3가 각각 Zn2+, Ti4+, In3+가 되어 d shell을 가득 차게 만드는 것을 볼 수 있다. 두 번째, cation d10s0 shell은 산소의 2p shell과 overlap 되어야 한다. 이 valence band는 홀 전도를 더욱 좋게 한다. 예를 들어 Cu1+(3d), Ag1+(4d)가 해당한다. 세 번째로, 양이온과 산소간의 공유결합을 강하게 하기 위해서 결정학적 구조는 매우 중요하다. Delafossite 구조는 산소가 pseudo-tetrahedral 구조로서 공유결합에 유리하다. 이러한 환경은 O2- (2p6)을 형성하고 홀의 이동도를 증가시킨다. 예를 들어 Cu2O의 경우 앞의 2가지를 만족시키지만 광학적 특성에서 좋지 않다. 그 이유가 3번째 언급한 결정학적인 요인에 있다. 결정 계의 환경은 Cu2O를 따라가면서 3차원적인 연결을 2차원적으로 변형된 delafossite 구조에서는 quantum well이 형성되어 band gap이 커진다. 본 연구에서는 전기적 이방성을 가지고 있는 delafossite CuCrO2 상에서 우선배향을 일으키는 인자 중 기판을 변화시켜 실험을 진행하였다. 결과적으로 기판변화를 통해 우선배향조절이 가능하였으며 CuCrO2 박막을 시켰으며, 결정방향에 따른 전기적 물성의 이방성에 관한 연구는 계속 진행 중에 있다. c-plane sapphire 기판위에는 [00l]로 성장하는 반면, c-plane STO 기판 위에는 [015] 방향으로 성장하는 것을 확인하였다. 이러한 원인은 기판과 증착되는 박막간의 mismatch를 최소화 하여 strain을 줄이고, 계면에서의 Broken boning 수를 줄여 계면에너지를 낮추는 방법이기 때문일 것으로 예상된다. C-plane sapphire 기판위에 증착될 경우 증착온도가 증가함에 따라 c-축으로의 성장이 온전해지며 이에 따라 캐리어농도의 감소와 모빌리티의 증가가 급격하게 변하는 것을 확인할 수 있다. 반면 c-plane STO 기판에서는 증착온도에 따른 박막의 배향변화가 없으며 전기적 물성 변화 또한 비교적 작은 것을 간접적으로 확인하였다.

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Deformation Characteristics of Zircaloy-4 Fuel Cladding due to Oxidation in Environment of High Temperature and Steam (고온, 수증기 속에서 산화된 질칼로이-4 핵연료 피복관의 변형 특성에 관한 연구)

  • Jung, Sung-Hoon;Suh, Kyung-Soo;Kim, In-Sup
    • Nuclear Engineering and Technology
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    • v.18 no.3
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    • pp.218-227
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    • 1986
  • Studies were conducted to determine the extent of oxidation and same of the mechanical property changes of Zircaloy-4 fuel cladding after it was exposed to hot steam environment. The purpose of these tests was to provide some informations on the embrittlement behavior of CANDU type fuel cladding, which could be experienced under the loss-of-coolant accident conditions. The Zircaloy fuel cladding tubes were exposed in a steam environment at the temperature of 90$0^{\circ}C$, 1,00$0^{\circ}C$. The growth of the ZrO$_2$ layer combined with an oxygen rich $\alpha$-phase layer into the Zircaloy tube material was found as a function of time t and temperature of steam exposure, E=1.1√Dt+0.002 where D is a temperature dependent diffusion coefficient. The tensile strength of the specimens exposed for a short period increased but decreased continuously with further exposure. The circumferential elongation was drastically changed with the exposure time while the hoop strength did't decrease greatly. The X-ray measurement of preferred orientation of the Zircaloy tube material indicated that grains in the as received tube were oriented such that the poles of the basal (0001) planes were predominantly radial, while the poles of the basal plane in the tube materials heattreated at 1,00$0^{\circ}C$ were oriented tangentially. It appears that this reoriented texture may contribute to lessening the decrease of the hoop strength of the heat treated Zircaloy tube material.

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Effects of Squealer Rim Height on Aerodynamic Losses Downstream of a High-Turning Turbine Rotor Blade

  • Lee, Sang-Woo;Chae, Byoung-Joo
    • Proceedings of the Korean Society of Propulsion Engineers Conference
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    • 2008.03a
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    • pp.160-167
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    • 2008
  • The effects of squealer rim height on three-dimensional flows and aerodynamic losses downstream of a high-turning turbine rotor blade have been investigated for a typical tip gap-to-chord ratio of h/c=2.0%. The squealer rim height-to-chord ratio is changed to be $h_{st}/c$=0.00(plane tip), 1.37, 2.75, 5.51, and 8.26%. Results show that as $h_{st}/c$ increases, the tip leakage vortex tends to be weakened and the interaction between the tip leakage vortex and the passage vortex becomes less severe. The squealer rim height plays an important role in the reduction of aerodynamic loss when $h_{st}/c{\leq}2.75%$. In the case of $h_{st}/c{\geq}5.51%$, higher squealer rim cannot provide an effective reduction in aerodynamic loss. The aerodynamic loss reduction by increasing $h_{st}/c$ is limited only to the near-tip region within a quarter of the span from the casing wall.

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