• Nuclear Engineering and Technology
• /
• v.56 no.1
• /
• pp.328-334
• /
• 2024

The activation method of metallic foils is an important technique to measure the flux and energy of proton beams. In this paper, the method was used to measure the CSNS APEP proton flux at seven nominal proton energies ranging from 10 MeV to 70 MeV for beam spot sizes of the 20 mm × 20 mm and 50 mm × 50 mm. The reactions of ^natTi(p, x)⁴⁸V, ^natNi(p, x)⁵⁷Ni, ^natCu(p, x)⁵⁸Co, and ²⁷Al(p, x)²⁴Na were employed to measure the proton beam flux with a range of 10⁷-10⁹ p/cm²/s. Furthermore, we also proposed a method using the activity ratio with a stacked-foil target to determine the energy spread of a Gaussian-like distribution for different nominal proton energies. The optimal combinations of Al, Cu, Ti, Ni, Mo, Fe, Nb, and In foils were adopted for the proton energies. The measured energy spreads for degraded beams of 30 MeV-70 MeV were found to be smaller than 10.00%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.12 no.1
• /
• pp.44-49
• /
• 1999

In this study, microstructure and electrical conductivity of {(G $d_2$ $O_3$)$_{0.75}$( $Y_2$ $O_3$)$_{0.25}$}$_{x}$ (Ce $O_2$)$_{1-x}$ (0.01$\leq$x$\leq$0.25) was investigated as a function of composition x. GYO addition(x) increased the bulk density and G $d_2$ $O_3$ was found to be monoclinic at x>0.15. From the change of the lattice parameter with the addition(x), GYO solution limit for ceria was exceeded in the range of x=0.05 to 0.09. Thermal expansion coefficient(15~17$\times$10$^{-6}$ $^{\circ}C$) of GYC samples at x=0.01 to 0.07 was higher in value than that of 8YSZ(10.8$\times$10$^{-6}$ $^{\circ}C$). The electrical conductivity of GYC samples at x=0.05 showed the maximum(0.01S/cm) in value at 1073K which was 2 times higher than that of 8YSZ. The activation energy for the electrical conduction was determined to be 0.60eV in the temperature range of 1073K.3K..3K.

• Applied Science and Convergence Technology
• /
• v.24 no.5
• /
• pp.125-131
• /
• 2015

We investigated the thermal characteristics of rotating anode X-ray tube to develop it for digital radiography by using computer simulation. The target which is the area of the anode struck by electrons is the most important component to get a long life of X-ray tube. So we analyze the thermal characteristics of the target and rotor assembly according to their emissivity by using ANSYS transient thermal simulation and then compare with the measured data of the target temperature operating in aging process of X-ray tube. Especially, keeping the lead coated layer as the role of metal lubricant on ball bearing enables to prevent the noise in rotating anode. The simulation result showed that its temperature was under the melting point of the lead in X-ray tube for digital radiography with 1.2 mm large focal spot 0.6 mm small focal spot and 150 kV tube voltage. We also investigated the relationship between the diameter of the anode shaft and the temperature of the anode and rotor assembly. It has been confirmed that the smaller anode shaft could be good for the rotor thermal characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11a
• /
• pp.163-166
• /
• 2001

The stochiometric mix of evaporating materials for the ZnGa$_2$Se$_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, ZnGa$_2$Se$_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 61$0^{\circ}C$ and 45$0^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnGa$_2$Se$_4$ single crystal thin films measured from Hall effect by van der Pauw method are 9.63x10$^{17}$ cm$^{-3}$ , 296 $\textrm{cm}^2$/V.s at 293 K, respectively, From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the ZnGa$_2$Se$_4$ single crystal thin film, we have found that the values of spin orbit splitting $\Delta$So and the crystal field splitting $\Delta$Cr were 251.9 MeV and 183.2 meV at 10 K, respectively. From the photoluminescence measurement on ZnGa$_2$Se$_4$ single crystal thin film, we observed free excition (E$_{x}$) existing only high quality crystal and neutral bound excition (A$^{0}$ ,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral acceptor bound excition were 11 meV and 24.4 meV, respectivity. By Haynes rule, an activation energy of impurity was 122 meV.on energy of impurity was 122 meV.

• Journal of Korean Society for Atmospheric Environment
• /
• v.24 no.5
• /
• pp.512-522
• /
• 2008

Ammonia is a major compound of odor in livestock house. To enhance the performance of ammonia oxidation (decomposition). the gas-liquid, two phase photocatalytic oxidation system was designed and prepared in this study. Commercial P-25 as $TiO_2$ catalyst was used for ammonia decomposition. V/P-25 catalyst prepared by sol gel method was also used for the removal of by-producted $NO_x$ in $NH_3$ oxidation reaction. When $TiO_2$ was used as a photocatalyst, the conversion to $N_2$ in ammonia decomposition reached above 90% until 200hr (The air flow rate of 4L/min with the ammonia concentration up to 25ppm.). However, considerable amounts of NO and $NO_2$ were formed as a result of $NH_3$ oxidation (as a by-product). Therefore, we added Vanadia impregnated $TiO_2$(P-25) catalyst for the removal of $NO_x$ at the end of reaction trail. The results of a pilot-scale operation were successful to achieve the simultaneous removal of $NH_3\;and\;NO_x$ about 81 and 87%, respectively.

• Korean Journal of Crystallography
• /
• v.12 no.3
• /
• pp.127-136
• /
• 2001

A stoichiometric mixture of evaporating materials for ZnGa₂Se₄single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, ZnGa₂Se₄mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were 610℃ and 450℃, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnGa₂Se₄single crystal thin films measured from Hall effect by von der Pauw method are 9.63×10/sup 17/㎤ and 296 ㎠/V·s at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the ZnGa₂Se₄single crystal thin film, we have found that the values of spin orbit splitting △so and the crystal field splitting Δcr were 251.9meV and 183.2 meV at 10 K, respectively. From the photoluminescence measurement on th ZnGa₂Se₄single crystal thin film, we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton (A°, X) having very strong peak intensity. Then, the full-width-at-half-maximum (FWHM) and binding energy of neutral acceptor bound excition were 11 meV and 24.4 meV, respectivity. By Haynes rule, an activation energy of impurity was 122 meV.

• Food Science and Preservation
• /
• v.17 no.5
• /
• pp.659-666
• /
• 2010

A central composite design was used to investigate the effects of the three independent variables of extraction temperature ($X_1$), ethanol concentration ($X_2$), and extraction time ($X_3$), on dependent variables including yield ($Y_1$), total phenol levels ($Y_2$), electron-donating ability ($Y_3$), brownness ($Y_4$), and reducing sugar content ($Y_5$) of Vitis Coignetiae. Yield was affected by extraction temperature and time. The maximum yield was obtained at $91.62^{\circ}C(X_1)$, and, 25.37% (w/v) ethanol ($X_2$), after 317.70 min of extraction ($X_3$), evident as a saddle when displayed graphically. Total phenol levels were essentially unaffected by extraction temperature or ethanol concentration, but were highly influenced by extraction time. The maximum total phenol levels was 4,763.46 GAE mg/100 g obtained at $88.20^{\circ}C(X_1)$, and 47.79% (w/v) ethanol ($X_2$), after 349.32 min ($X_3$) of extraction. Electron-donating ability (EDA) was affected by extraction temperature and time. Maximum EDA was 55.90% at $86.72^{\circ}C(X_1)$, 50.61% (w/v) ethanol ($X_2$), and 265.96 min ($X_3$) of extration time, again shown by a graphical saddle. Brownness was affected by extraction time. The maximum extent of brown coloration was obtained at $82.66^{\circ}C(X_1)$, 99.27% (w/v) ethanol ($X_2$), and 252.63 min of extraction time ($X_3$), once again shown by graphical saddle. The maximum reducing sugar content was obtained at $96.24^{\circ}C(X_1)$, 22.59% (w/v) ethanol ($X_2$), and 216.06 min extraction time($X_3$).

• Journal of the Korean Chemical Society
• /
• v.39 no.3
• /
• pp.157-162
• /
• 1995

The x values and electrical conductivities of the nonstoichiometric compounds $WO_{3-x}$ have been measured in the temperature range from 350 to 700$^{\circ}C$ under oxygen partial pressure of $2{\times}10_{-1}\;to\;1{\times}10_{-5}$ atm. The enthalpy of the defect formation shows an endothermic process, and the oxygen pressure dependence of the defect formation or 1/n varies from -1/5.2 to -1/5.9. The activation energy and 1/n value for the electrical conductivity are 0.24~0.29 eV and -1/4.3~-1/7.6, respectively. The Tungsten Oxide as a n-type semiconductor has predominently defect model of singly charged oxygen vacancy at low temperature, and of doubly charged oxygen vacancy at high temperature.

• Transactions on Electrical and Electronic Materials
• /
• v.1 no.1
• /
• pp.22-25
• /
• 2000

Polycrystalline SBTN layered ferroelectric thin film with various Nb mole ratios were prepared by sol-gel method Pt/ $SiO_2$/Si (100) substrates. The films were annealed at different temperature and characterized in terms of phase and microstructure. The films were crystallized with a high (105) diffraction intensity and had rodike structure, SBTN films fired at 800$^{circ}C$ revealed standard hysteresis loops with no fatigue for up to 10$^{10}$ cycles. At an applied voltage of 5V the dielectric constant($varepsilon$) , dissipation factor (tan $delta$), remanent polarization(ZPr) and coercive field(Ec) of typical S $r_{0.8}$B $i_{2.3}$(T $a_{1-x}$ N $b_{x}$) $O_{9+}$$alpha$/ thin film(x=0.1) prepared on Pt/ $SiO_2$/Si (100) were about 277.7, 0.042, 3.74$mu$C/$textrm{cm}^2$, and 24.8kv/cm respectively.ly.y. respectively.ly.y.y..

• Journal of Biosystems Engineering
• /
• v.24 no.1
• /
• pp.19-24
• /
• 1999

Motivated by the need for developing the more efficient lighting system for light culture of strawberries in the greenhouse, this paper aims at acquiring and suggesting more concrete and scientific foundation of illuminating position, numbers of light source by investigating the types of lighting system and illumination distribution in the greenhouse for light culture of strawberries. The results of investigation and experiment are summarized as following below: 1. The types of lighting system used in the greenhouse producing strawberries were classified as 1 line and 2 lines lighting system. 2. As for the arranging types of artificial light, 2 lines lighting system, were classified as Z-type, N-type and W-type. (Refer Fig. 3) 3. The results of illumination distribution for Z-type, N-type and W-type of 2 lines illuminating system in the greenhouse with a small size tunnel measured at the height of 1.5m from the ground with 220V, 100W lamp in 6m light gap showed that maximum illuminance are 961x, 1211x, 1251x, minimum illuminance are 4.41x, 4.71x, average illuminance are 33.71x, 43.11x, 44.51x and standard deviations are 28.31x, 35.41x, 38.31x at each types. 4. Proportion of the area below optimal illuminance to floor area at the two lines illuminating system of Z-, N-, and W-type in greenhouse were appeared as 39.4%, 26.0% and 26.3%, respectively. Also proportion of the area over optimal illuminance to floor area at the two lines illuminating system of Z-, N-, W-type in greenhouse were appeared as 16.8%, 14% and 14.7%, respectively. Thus N-type was superior to the others from the view points of optimal illumination distribution and energy saving.