• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.193-196
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• 2001

XLPE is occasionally happened to deteriorate cable insulation characteristics. It is happened to do a breakdown state by the degradation of electrical characteristic and electrical breakdown strength. I prepared TR-XLPE (Tree-Retardant XLPE) as adding various additives to prevent its states. Various additives are treeing retardants, anti-oxidants. Treeing retardants three kinds of aromatic compounds as adding each additive. Anti-oxidants use quinone compound and cresol compound as adding each additive. In order to observe each electrical characteristics, I measured breakdown strength, relative dielectric constant$({\varepsilon}_r)$, dielectric loss tangent$(tan{\delta})$. TR-XLPE specimens as adding treeing retardants and anti-oxidants enhance breakdown strength, ${\varepsilon}_r$, $tan{\delta}$ than pure XLPE.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.6
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• pp.143-148
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• 1994

In order to study the effect of D.C resistivity of sample on electromagnetic loss of ferrite at microwave frequency, samples were prepared for having differences in resistivity of an order of two. Microwave permeability($\mu$), permitivity($\varepsilon$) and effective linewidth(${\Delta}H_{eff}$), and ferromagnetic resonance linewidth(${\Delta}$H) were characterized. Tan${\delta}{\mu}$, tan${\delta}{\varepsilon}$ and ${\Delta}H_{eff}$ were decreased with increasing the resistivity and (${\Delta}$H) was increased with increasing Fe concentration, which was due to an increase of anisotropy magnetic field (=Ha).

• Journal of the Korean Vacuum Society
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• v.6 no.1
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• pp.36-43
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• 1997

FECAPS(ferroelectric capacitors) have been fabricated by RF magnetron sputtering deposition of 3000$\AA$ PZT thin films on the Pt/Ti/$SiO_2$/Si substrates and post-annealing with the temperature of $550^{\circ}C$~$650^{\circ}C$ for 10 sec~50 sec in a RTA system. The electrical characteristics of the fabricated capacitors showed the highest dielectric constant and remanent polarization[${\varepsilon_r(1kHz)$=690, $2P_r$(-5V~5V sweep)=22$\mu$C/$ \textrm{cm}^2$] in the samples annealed at $650^{\circ}C$ for 30 sec, while the lowest tangent loss and leakage current [$tan\delta(\ge10kHz)\le0.02, \; J_i(5V)=3\mu\textrm{A}/\textrm{cm}^2$]in the samples annealed at $600^{\circ}C$ for 30 sec.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2000.11a
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• pp.61-64
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• 2000

Three kinds of treeing inhibitors are added to investigate the effect on electrical properties of XLPE. The treeing inhibitors are barbituric acid, 4- (4-Nitrophenylazo) resorcinol and 4- (4-Nitrophenylazo) naphthol. Added amount of each treeing inhibitors varied form 0phr to 2.0phr. In order to know the changes of electrical properties, break down strength, tan$\delta$, and $\varepsilon$$_{r}$ were measured. Experimental results showed that electrical properties of each sample was slightly changed by amount of additives.s.

• Korean Journal of Materials Research
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• v.6 no.8
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• pp.825-832
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• 1996

적외선 센서의 재료로 활용되고 있는 PLT박막 (두께:8000$\AA$-9000$\AA$)을 Pt/Ti/SiO2/Si와 Pt/M\ulcorner의 하부 구조상에 50$0^{\circ}C$, 55$0^{\circ}C$ 및 $600^{\circ}C$에서 스퍼터링 증착하여 결정성 및 전기적 특성을 조사하였다. $600^{\circ}C$로 in-situ 성장된 PLT박막은 Si기판을 이용한 경우 randomly oriented perovskite 결정구조를 나타내었으며, Pt/MgO 구조위에서는 c-축(00ι)방향으로 배향 성장되었다. $600^{\circ}C$에서 in-situ 성장된 PLT박막의 비유전상수($\varepsilon$r)와 유전정접(tan $\delta$)을 10kHz-100kHz의 주파수에서 측정한 결과 Pt/Ti/SiO2/Si 구조상에 증착된 박막은$\varepsilon$r=90과 tan $\delta$=0.02의 값을 Pt/MgO 구조상에 증착된 박막은 $\varepsilon$e=35와 tan$\delta$=0.01의 값을 나타내었다. 잔류분극량(2Pr)과 초전계수(${\gamma}$)는 상온부근에서 Si 기판을 이용한 경우 각각 0.6$\mu$C/$\textrm{cm}^2$.。C과 0.5x10-8C/$\textrm{cm}^2$.。C정도로 매우 작게 나타났으나 PLT/Pt/MgO 구조에서는 2Pr=5$\mu$C/$\textrm{cm}^2$, r=4x10-8C/$\textrm{cm}^2$.。C로 비교적 양호한 초전박막의 전기적 특성을 나타내었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.61-64
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• 2000

Three kinds of treeing inhibitors are added to investigate the effect on electrical properties of XLPE. The treeing inhibitors are barbituric acid, 4- (4-Nitrophenylazo) resorcinol and 4-(4-Nitrophenylazo) naphthol. Added amount of each treeing inhibitors varied form 0phr to 2.0phr. In order to know the changes of electrical properties, break down strength, tan$\delta$, and $\varepsilon$$_{r}$ were measured. Experimental results showed that electrical properties of each sample was slightly changed by amount of additives.s.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.3
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• pp.301-307
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• 2002

A multilayer ceramic chip antenna with helical structure is analyzed to enhance the narrow bandwidth of conventional ceramic chip antennas. The simulations are performed by HFSS to verify the effects of structural parameters on impedance bandwidth. The multilayer ceramic chip antennas consist of a rectangular-parallelepiped ceramic body$({\varepsilon}_r=7.8,\; tan\; {\delta}=0.0043)$ and helical conductor patterns are embedded in the ceramic body using LTCC-MLC technology. 3D structure design of the multilayer ceramic chip antenna suitable for IMT-2000 (1,920~2,170 MHz) handset has been implemented, and experimental results are presented and discussed.

• Journal of the Korean Ceramic Society
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• v.39 no.8
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• pp.742-749
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• 2002

The PZT thin films werre deposited on Pt/Ti/$SiO_2$/Si substrate by R. F. magnetron sputtering with $Pb_{1.1}Zr_{0.53}Ti_{0.47}O_3$ target. When interlayers(PbO, $TiO_2$, PbO/$TiO_2$) were inserted between PZT and Pt, the crystallization of the PZT thin films was considerably improved and the processing temperature was lowered. Compared to the pure PZT thin films, dielectric constant, dielectric loss and polarization properties of PZT thin films with interlayers were considerably improved. From XPS depth profile analysis, it was confirmed that PZT thin films and interlayers existed independently. In particular, PZT thin films deposited on interlayer(PbO/$TiO_2$) showed the best dielectric property (${\varepsilon}_r$=414.94, tan${\delta}$=0.0241, Pr=22${\mu}C/cm^2$).

• Journal of the Korean Chemical Society
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• v.53 no.1
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• pp.42-50
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• 2009

The dielectric-spectroscopic and ac conductivity studies firstly carried out on layered manganese doped Sodium Lithium Trititanates ($Na_{1.9}Li_{0.1}Ti_3O_7$). The dependence of loss tangent (Tan$\delta$), relative permittivity ($\varepsilon_r$) and ac conductivity ($\sigma_{ac}$) in temperature range 373-723K and frequency range 100Hz-1MHz studied on doped derivatives. Various conduction mechanisms are involved during temperature range of study like electronic hopping conduction in lowest temperature region, for MSLT-1 and MSLT-2. The hindered interlayer ionic conduction exists with electronic hopping conduction for MSLT-3. The associated interlayer ionic conduction exists in mid temperature region for all doped derivatives. In highest temperature region modified interlayer ionic conduction along with the polaronic conduction, exist for MSLT-1, MSLT-2, and only modified interlayer ionic conduction for MSLT-3. The loss tangent (Tan$\delta$) in manganese-doped derivatives of layered $Na_{1.9}Li_{0.1}Ti_3O_7$ ceramic may be due to contribution of electric conduction, dipole orientation, and space charge polarization. The corresponding increase in the values of relative permittivity may be due to increase in number of dipoles in the interlayer space while the corresponding decrease in the values of relative permittivity may be due to the increase in the leakage current due to the higher doping.

• Proceedings of the Korean Vacuum Society Conference
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• 1996.06a
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• pp.180-181
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• 1996

적외선 센서의 재료로 활용되고 있는 ppLT 박막(두께:8000~9000$\AA$)을 ppt/MgO(100)의 하부 구조상에 50$0^{\circ}C$ 및 $600^{\circ}C$에서 스퍼터링 증착하여 결정성 및 전기적 특성을 조사하였다. $600^{\circ}C$로 in-situ 성장된 ppLT 박막은 c-축(00l) 방향으로 배향 성장되었 고, 비유전상수(r)와 유전정접(tan)의 값이 10kHz~100kHz의 주파수에서 $\varepsilon$r≒35와 tan$\delta$≒ 0.01로 나타났다. 잔류분극량(2ppr)과 초전계수(${\gamma}$)는 상온부근에서 2ppr≒5$\mu$C/cm2, ${\gamma}$≒4$\times$ 10-8C/cm2.$^{\circ}C$로 비교적 양호한 초전박막의 전기적 특성을 나타내었다.