• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.179-182
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• 1999

A new band pass filter (BPF) prepared by dielectric monoblock and its design techniques are presented. The modeling of the three-pole dielectric monoblock BPF has been carried out by CAD. The equivalent circuit of the BPF was established by transmission lines and lumped capacitors. The transmission line characteristic impendances were computed using 2-D FEM. The BPF for PCS has been designed to have a 60 MHz pass-bandwidth with center frequency of 1960 MHz and an attenuation pole at below the passband using a commercial 3-D structure simulator.

• Journal of the Korean institute of surface engineering
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• v.31 no.4
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• pp.209-216
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• 1998

It is well knownthat electroledd plating is the desirable surface treatment method which is being widely used to all kinds of material such as requiring corrosing resistance, wear resistance and conductivity, especially nonconductivity materials' surface plating. However, it is suggested that there are some problems that must be solved, for exaple, rate of plating, corrosion resistance, thickness of plating film etc. Therefore in this paper, when electroless nickel plating was performed on the PZT(Pb(Zr,Ti))with varying of solution composition such as NaOH, and $H_2NCH_2COOH$, the effect of the rate of plating and corrosion resistance were investigated.

• Journal of the Korean Ceramic Society
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• v.29 no.1
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• pp.65-73
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• 1992

The effect of grain size on the time-dependent piezoelectrice degradation of a poled PZT of MPB composition Pb0.988Sr0.012 (Zr0.52Ti0.48)O3 with 2.4 mol% of Nb2O5 was studied, and the degradation mechanism was discussed. Changes in the internal bias field and the internal stress both responsible for the time-dependent degradation of poled PZT were examined by the polarization reveral technique, XRD and Vickers indentation, respectively. The piezoelectric degradation increased with increasing time and grain size, and the internal bias field due to space charge diffusion decreased with increasing grain size of poled PZT. The internal bias field, however, was almost insensitive to the degradation time regardless of the grain size. On the other hand, both the x-ray diffraction peak intensity ratio of (002) to (200) and the fracture behavior including the crack propagation support that the ferroelectric domain rearrangement of larger grain size showed rapid relaxation of the internal stress compared with smaller one, which is thought the origin of the larger piezoelectric degradation in the former. In conclusion, the contribution of space charge diffusion on the piezoelectric degradation of PZT is strongly dependent on both the grain size and the composition. Thus, the relaxation of internal stress due to the ferroelectric domain rearrangement as well as the amount and time-dependence of the internal bias field due to space charge diffusion should be considered simultaneously in the degradation mechanism of PZT.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.189-190
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• 2005

본 논문에서는 카메라폰용 광학줌(Optical zooming)과 자동초점조절장치(Auto Focusing,AF)에 쓰일 초음파모터를 제작하였다. 초음파모터의 제작 및 시뮬레이션은 유한요소해석 프로그램인 ATILA 5.2 1(Magsoft co.)를 사용하여 디자인설계에 따른 구동특성을 고찰하였고 제작된 초음파모터는 한쪽 면이 없는 사작형의 탄성체를 제작하였으며 탄성체의 양쪽 다리에 각각 압전체를 부착하였다 또한 압전세라익의 조성은 0.9Pb$(Zr_{0.51}Ti_{0.49})O_3$ - 0.1Pb$(Mn_{1/3}Nb_{1/3}Sb_{1/3})O_3$ 의 조성으로 설계하였고 시편의 제조는 7-layer로 적층하였다. 제작된 압전세라믹의 치수는 6*2*0.35mm$^3$(길이*폭*두께)로 제작하였다. 또한 탄성체의 외형치수는 8*4*2mm$^3$로 제작하였으며 회전축의 지름은 2mm로 제작하였다. 인가전압과 공진주파수가 각각 20Vpp, 64kHz일 때 소비전력은 0.3[W]이며 회전속도는 500rpm 으로 측정되었다.

• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.28-33
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• 2008

Lanthanum modified lead zirconate titanate ($Pb_{1.1}La_{0.08}Zr_{0.65}Ti_{0.35}O_3$) thin films were fabricated on indium doped tin oxide (ITO)-coated glass substrate by R.F magnetron sputtering method. The thin films were deposited at $500^{\circ}C$ and post-annealed with various temperature ($550-750^{\circ}C$) by rapid thermal annealing technique. The structure and morphology of the films were characterized with X-ray diffraction (XRD) and atomic force microscopy (AFM) respectively. The hysteresis loops and fatigue properties of thin films were measured by precision material analyzer. As the annealing temperature was increased, the remnant polarization value was increased from $10.6{\mu}C/cm^2$ to $31.4{\mu}C/cm^2$, and coercive field was reduced from 79.9 kV/cm to 60.9 kV/cm. As a result of polarization endurance analysis, the remnant polarization of PLZT thin films annealed at $700^{\circ}C$ was decreased 15% after $10^9$ switching cycles using 1MHz square wave form at ${\pm}5V$.

• Journal of Sensor Science and Technology
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• v.17 no.2
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• pp.127-132
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• 2008

The effect of $CeO_2$ as a sintering additive on the microstructure and the piezoelectric property of yPb$(Sb_{0.5}Nb_{0.5})O_3$-(1-y)Pb$(Zr_{0.52}Ti_{0.48})O_3$ ($0{\leq}y{\leq}0.1$, PSN-PZT) for a hypersonic sound speaker (HSS) application was investigated. The samples were sintered at $1250^{\circ}C$ for 2 h. The crystal structure and surface morphology of the samples were examined using XRD and FE-SEM, respectively. Study on the influence of $CeO_2$ additives on the dielectric and piezoelectric properties indicated that the $CeO_2$-added PSN-PZT system had a high piezoelectric properties. The optimized results of ${\varepsilon}_r=1209$, $K_p$=52% $d_{33}$=351(pC/N) and $Q_m$=1230.16 were obtained at 0.4 wt.% $CeO_2$-added PSN-PZT.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1553-1555
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• 1999

Recently, $SrBi_2Ta_2O_9$(SBT) and $Pb(ZrTi)O_3$(PZT) were much attracted as materials of capacitor for ferroelectric random access memory(FRAM) showing higher read/write speed, lower power consumption and nonvolartility. Bi-layered SBT thin film has appeared as the most prominent fatigue free and low operation voltage for use in nonvolatile memory. To highly integrate FRAM, SBT thin film should be etched. A lot of papers on SBT thin film and its characteristics have been studied. However, there are few reports about SBT thin film due to difficulty of etching. In order to investigate properties of etching of SBT thin film, SBT thin film was etched in $CF_4$/Ar gas plasma using magnetically enhanced inductively coupled plasma (MEICP) system. When $CF_4/(CF_4+Ar)$ is 0.1, etch rate of SBT thin film was $3300{\AA}/min$, and etch rate of Pt was $2495{\AA}/min$. Selectivities of SBT to Pt. $SiO_2$ and photoresist(PR) were 1.35, 0.6 and 0.89, respectively. With increasing $CF_4$ gas, etch rate of SBT thin film and $P_t$ decreased.

• The Journal of the Petrological Society of Korea
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• v.7 no.2
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• pp.111-131
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• 1998

The migmatitic gneiss in the Odesan Gneiss Complex has small amount of quartzite, amphibolite and marble and the Kuryong Group which contact with migmatitic gneiss unconformitly, also contains some amphibolite. Preview studies of this area had regarded that the amphibolites contact with marble had been produced by metasomatism from the pelitic and calcareous sediments mixtures, but the amphibolite is reinterpreted as igneous origin. $SiO_2$ content of the amphibolite is 45.9~52.7 wt%, which corresponds to basaltic composition. MgO content has narrow range (4.6~6.87 wt%) and major and trace element are plotted against MgO,$TiO_2, P_2O_5$, Hf, Zr are reduced and Cr and Ni are increased their content with increasing MgO. This phenomenon indicates that the basaltic magma as the protolith of the amphibolite had frationated with the crystallization of the pyroxene and/or olivine. REE pattern has smoothly decrease from LREE to HREE. Eu/Eu(0.83~1.19) show the flat Eu anomaly, which indicate small fractional crystallization of plagioclase. HREE is enriched in the garnet-bearing amphibolites. Several discrimination diagram for the basaltic magma show that the amphibolite of the study area is originated tholeiitic basaltic magma indicating continental rift environment. Due to determine the metamorphic condition garnet-hornblende geothermometry and hornblende-plagioclase geobarometry are used. Peak metamorphic temperature range of the amphibolite $788~870^{\circ}C$ and is deduced toward the northeastern part. The calculated temperature from the amphibolite has slightly higher than the temperature of the metapelites but the trend of metamorphic grade which decrease from western to eastern part progradly is similar to each other. The metamorphic pressure calculated by garnet- hornblede-plagioclase geobarometry is 4~5kb. But ilmenite-plagioclase pair enclosed in garnet show 8 kb at $700^{\circ}C$ by garnet-ilmenite-rutile-plagioclase geobarometery. The zonal profile of garnet in sample 84 shows the bell-shape profile, which grossular content decreases whereas pyrope content increases progressively. This means that the amphibolite has undergone the clockwise P-T-t path which is shown in the migmatitic gneiss of the Odesan Gneiss Complex.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.4
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• pp.1-6
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• 2000

Recently, SrBi$_{2}$Ta$_{2}$ $O_{9}$(SBT) and Pb(Zr,Ti) $O_{3}$(PZT) were much attracted as materials of capacitor for ferroelectric random access memory(FRAM) with higher read/ write speed, lower power consumption and nonvolartility. SBT thin film has appeared as the most prominent fatigue free and low operation voltage. To highly integrate FRAM, SBT thin film has to be etched. A lot of papers have been reported over growth of SBT thin film and its characteristics. However, there are few reports about etching SBT thin film owing to difficult of etching ferroelectric materials. SBT thin film was etched in CF$_{4}$Ar plasma using magnetically enhanced inductively coupled plasma (MEICP) system. In order to investigate the chemical reaction on the etched surface of SBT thin films, X-ray Photoelecton spectrosocpy (XPS) and Secondary ion mass spectroscopy(SIMS) was performed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.68-69
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• 2005

Low temperature ($\leq900^{\circ}C$) sintering piezoelectric ceramics $0.01Pb(Mg_{1/2}W_{1/2})O_3$-0.41Pb$(Ni_{1/3}Nb_{2/3})O_3-0.35PbTiO_3-0.23PbZrO_3+0.1wt%Y_2O_3+xwt%ZnO$ $(0{\leq}x{\leq}2.5)$ have been developed and investigated. The electromechanical coupling coefficient ($k_p$), piezoelectric constant ($d_{33}$), and mechanical quality factor ($Q_m$) have been measured to characterize the piezoelectric materials system. When 2.0 wt% ZnO is added, the properties of the system, $d_{33}$ = 559 pC/N, $k_p$ = 55.0 % and $Q_m$ = 73.4 are obtained which are very suitable for piezoelectric actuators. A bending mode multilayer actuator has been also developed using the materials which size is $27(L)\times9(W)\times1.07(t)mm^3$. The actuators are fabricated by multilayer ceramic (MLC) process and consist of24 layers and each layer thickness is $35{\mu}m$. At this time, the displacement of actuator was $100{\mu}m$ at 28V.