• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1336-1338
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• 1997

Relations between the composites of SiC-$ZrB_2$ electro-conductive ceramic composites and their electrical resistivity, as well as their temperature, were investigated. The electrical resistivity of hot-pressed composites was measured by the Pauw method in the temperature of RT to $100^{\circ}C$. The electrical resistivity of the composites follow the electrical conduction model for a homogenous mixture of two kinds of particles with different conductivity. Also the electrical resistivity versus temperature curves indicate the formation of local chains of $ZrB_2$ particles. In the case of SiC-$ZrB_2$ composites containing above 30Vol.% $ZrB_2$ showed PTCR, whereas the electrical resistivity of SiC-15Vol.% $ZrB_2$ showed NTCR.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.27 no.7
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• pp.1132-1137
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• 2003

This study dealt with the suppression of interfacial reaction between Nb and MoSi$_2$ for the fabrication of high toughness Nb/MoSi$_2$ laminate composites, based on the results of a thermodynamical estimation. Especially, the effect of ZrO$_2$ particle on the interfacial reaction of Nb/MoSi$_2$ bonding materials has been examined. Nb/MoSi$_2$ bonding materials have been successfully fabricated by alternatively stacking matrix mixtures and Nb sheets and hot pressing in the graphite mould. The addition of ZrO$_2$ particle to MoSi$_2$ matrix is obviously effective for promoting both the interfacial reaction suppression and the sintered density of Nb/MoSi$_2$ bonding materials, since it is caused by the formation of ZrSiO$_4$ in the MoSi$_2$-ZrO$_2$ matrix mixture. The interfacial shear strength of Nb/MoSi$_2$ bonding materials also decreases with the reduction of interfacial reaction layer associated with the content of ZrO$_2$ particle and the fabrication temperature.

• Applied Chemistry for Engineering
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• v.18 no.5
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• pp.516-521
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• 2007

The copolymerization characteristics of a newly-synthesized catalyst, $rac-Me_2Si(2-p-tolylindenyl)_2ZrCl_2$, and its analogue, $rac-Me_2Si(Ind)_2ZrCl_2$, were examined in the ethylene/1-octene copolymerization while varying the concentration of 1-octene in the reaction mixture. The activity of $rac-Me_2Si(2-p-tolylindenyl)_2ZrCl_2$ catalyst was decreased with increase of comonomer concentration, which is different from the usual comonomer effect of the metallocene catalysts with a bridge structure. The contents of 1-octene in the copolymer from the catalyst with 2-p-tolyl substituent were higher than those from the catalyst without that substituent. The melting point, crystallinity, and molecular weight decreased with comonomer content which was more apparent for $rac-Me_2Si(2-p-tolylindenyl)_2ZrCl_2$ catalyst.

• Journal of the Korean Ceramic Society
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• v.55 no.5
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• pp.440-445
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• 2018

To control the electrical properties of a SiC heating element, we sintered $SiC-ZrB_2$composites by using the spark plasma sintering method. The addition of $ZrB_2$ particles with lower electrical conductivity to the SiC matrices with comparatively higher electrical resistivity lowers the electrical resistivities of the composite material. The $ZrB_2$ particles aggregate to form large particles and 3-1, 3-2, and 3-3 networks, i.e., conduction paths. In our study, about $1-{\mu}m$-sized $ZrB_2$ powders start to form the conduction path at about 10 vol.% of addition, namely the threshold volume. The Joule heating experiment shows that 20 vol.% $ZrB_2$-added SiC heating element has outstanding heating efficiency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.186-189
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• 2003

The MFIS capacitors were fabricated using a metalorganic decomposition method. Thin layers of $ZrO_2$ and $CeO_2$ were deposited as a buffer layer on Si substrate and BLT thin films were used as a ferroelectric layer. The electrical and structural properties of the MFIS structure were investigated. X -ray diffraction was used to determine the phase of the BLT thin films and the quality of the $ZrO_2$ and $CeO_2$ layer. AES show no interdiffusion and the formation of amorphous $SiO_2$ layer is suppressed by using the $ZrO_2$ and $CeO_2$ film as buffer layer between the BLT film and Si substrate. The width of the memory window in the C-V curves for the $BLT/ZrO_2/Si$ and $BLT/CeO_2/Si$ structure is 2.94 V and 1.3V, respectively. The experimental results show that the BLT-based MFIS structure is suitable for non-volatile memory FETs with large memory window.

• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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• 2002.05a
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• pp.29-34
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• 2002

[ $Nb/MoSi_2-ZrO_2$ ] laminate composites have been successfully fabricated by alternately stacking $MoSi_2-ZrO_2$ powder layer and Nb sheet, followed by hot pressing in a graphite mould. The fabricating parameters were selected as hot press temperatures. The instrumented Charpy impact test was carried out at the room temperature in order to investigate the relationship between impact properties and fabricating temperatures. The interfacial shear strength between $MoSi_2-ZrO_2$ and Nb, which is associated with the fabricating temperature and the growth of interfacial reaction layer, is also discussed. The plastic deformation of Nb sheet and the interfacial delamination were macroscopically observed. The $Nb/MoSi_2-ZrO_2$ laminate composites had the maximum impact value when fabricated at 1623K, accompanying the increase of fracture displacement and crack propagation energy. The interfacial shear strength of $Nb/MoSi_2-ZrO_2$ laminate composites increased with the growth of interfacial reaction layer, which resulted from the increase of fabricating temperature. there is an appropriate interfacial shear strength for the enhancement of impact value of $Nb/MoSi_2-ZrO_2$ laminate composites. A large increase of interfacial shear strength restrains the plastic deformation of Nb sheet.

• Korean Journal of Materials Research
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• v.20 no.4
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• pp.217-222
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• 2010

Zirconium diboride (ZrB2) and mixed diboride of (Zr0.7Ta0.3)B2 containing 30 vol.% silicon carbide (SiC) composites were prepared by hot-pressing at $1800^{\circ}C$. XRD analysis identified the high crystalline metal diboride-SiC composites at $1800^{\circ}C$. The TaB2 addition to ZrB2-SiC showed a slight peak shift to a higher angle of 2-theta of ZrB2, which confirmed the presence of a homogeneous solid solution. Elastic modulus, hardness and fracture toughness were slightly increased by addition of TaB2. A volatility diagram was calculated to understand the oxidation behavior. Oxidation behavior was investigated at $1500^{\circ}C$ under ambient and low oxygen partial pressure (pO2~10-8 Pa). In an ambient environment, the TaB2 addition to the ZrB2-SiC improved the oxidation resistance over entire range of evaluated temperatures by formation of a less porous oxide layer beneath the surface SiO2. Exposure of metal boride-SiC at low pO2 resulted in active oxidation of SiC due to the high vapor pressure of SiO (g), and, as a result, it produced a porous surface layer. The depth variations of the oxidized layer were measured by SEM. In the ZrB2-SiC composite, the thickness of the reaction layer linearly increased as a function of time and showed active oxidation kinetics. The TaB2 addition to the ZrB2-SiC composite showed improved oxidation resistance with slight deviation from the linearity in depth variation.

• Journal of the Korean Ceramic Society
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• v.37 no.4
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• pp.359-367
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• 2000

Particulate composites of Al2O3/SiC, Al2O3/ZrO2 and Al2O3/ZrO2/SiC have been fabricated to investigate their R-curve behaviors and toughening mechanisms. Al2O3 containing 30 vol% SiC particles of 3${\mu}{\textrm}{m}$ showed rising R-curve behavior owing to the strong crack bridging by SiC particles. The fracture toughness reached 9.1 MPa {{{{ SQRT {m} }} at the crack length of 1000${\mu}{\textrm}{m}$. On the other hand, ZrO2-toughened Al2O3 had a high flat R-curve since it rose steeply in the short crack region due to the well known transformation toughening. For Al2O3/ZrO2/SiC composites, the R-curve behavior was similar to that of Al2O3/SiC but with slightly higher toughness. The SiC particles in this composite decreased the amount of transformable tetragonal phase to reduce the effect of transformation toughening by 50%. It was also found that the fracture toughness of this composite with two different toughening mechanisms was markedly lower than that estimated by the simple addition of two contributions.

• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.311-313
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• 1997

The effects of porosity on the pressureless sintered $\beta$-SiC-$ZrB_2$ composites with $Al_2O_3$ additions(4, 8, 12wt.%) under argon atmosphere were investigated. Relative density of $\beta$-SiC-$ZrB_2$ composites were decreased with the $Al_2O_3$ content. The relative density and fracture toughness of $\beta$-SiC-$ZrB_2$ with 4wt% $Al_2O_3$ are 93.2%, $1.323MPa{\cdot}m^{1/2}$ respectively. The Vicker's hardness and flexural strength of $\beta$-SiC-$ZrB_2$ with 12wt.% $Al_2O_3$ are 0.492GPa, 261MPa respectively. Fracture toughness of $\beta$-SiC-$ZrB_2$ composites are directly proportional to relative density.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.1
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• pp.47-52
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• 2008

As the packing density of IC devices gets ever higher, the thickness of the gate $SiO_2$ layer of the MOS devices is now required to be reduced down to 1 nm. For such a thin $SiO_2$ layer, the MOS device cannot operate properly because of tunneling current and threshold voltage shift. Hence there has been much effort to develop new dielectric materials which have higher dielectric constants than $SiO_2$ and is free from such undesirable effects. In this work, the physical and electrical characteristics of ALD $ZrO_2$ film have been studied. After deposition of a thin ALD $ZrO_2$ film, it went through thermal treatment in the presence of argon gas at $800^{\circ}C$ for 1 hr. The characteristics of morphology, crystallization kinetics, and interfacial layer of $Pt/ZrO_2/Si$ samples have been investigated by using the analyzing instruments like XRD, TEM and C-V plots. It has been found that the characteristics of the $Pt/ZrO_2/Si$ device was enhanced by the thermal treatment.