• 한국공작기계학회논문집
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• 제11권3호
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• pp.86-92
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• 2002

In this study, experiments were carried out to investigate the characteristics of grinding and wear process of diamond wheel far ceramic materials. Normal component of grinding resistance of $Al_2$O$_3$ was less then that of $Si_3 N_4$ and $ZrO_2$. This seems to be the characteristics of ceramic tools on work pieces both of high hardness. For the case of $Si_3 N_4$ and $ZrO_2$, as the mesh number of wheel increases, the surface roughness decreases. For the case of $Al_2 O_3$, the surface roughness does not decreases. Specific binding energy decreases as the material removal rate per unit time increases. For the case of $Si_3 N_4$ and $ZrO_2$, grinding is carried out by abrasive wear processes. For the case of $Al_2 O_3$, grinding is carried out by grain shedding process due to brittle fracture.

• 한국재료학회지
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• 제20권5호
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• pp.241-245
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• 2010

One of the weak points of the Cr-doped SZO is that until now, it has only been fabricated on perovskite substrates, whereas NiO-ReRAM devices have already been deposited on Si substrates. The fabrication of RAM devices on Si substrates is important for commercialization because conventional electronics are based mainly on silicon materials. Cr-doped ReRAM will find a wide range of applications in embedded systems or conventional memory device manufacturing processes if it can be fabricated on Si substrates. For application of the commercial memory device, Cr-doped $SrZrO_3$ perovskite thin films were deposited on a $SrRuO_3$ bottom electrode/Si(100)substrate using pulsed laser deposition. XRD peaks corresponding to the (112), (004) and (132) planes of both the SZO and SRO were observed with the highest intensity along the (112) direction. The positions of the SZO grains matched those of the SRO grains. A well-controlled interface between the $SrZrO_3$:Cr perovskite and the $SrRuO_3$ bottom electrode were fabricated, so that good resistive switching behavior was observed with an on/off ratio higher than $10^2$. A pulse test showed the switching behavior of the Pt/$SrZrO_3:Cr/SrRuO^3$ device under a pulse of 10 kHz for $10^4$ cycles. The resistive switching memory devices made of the Cr-doped $SrZrO_3$ thin films deposited on Si substrates are expected to be more compatible with conventional Si-based electronics.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1913-1915
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• 1999

The ${\beta}-SiC+ZrB_2$ ceramic composites were hot-press sintered and annealed by adding 1, 2, 3wt% $Al_2O_3+Y_2O_3$(6 : 4wt%) powder as a liquid forming additives at $1950^{\circ}C$ for 4h. In this microstructures, no reactions were observed between $\beta$-SiC and $ZrB_2$, and the relative density is over 90.79% of the theoretical density and the porosity decreased with increasing $Al_2O_3+Y_2O_3$ contents. Phase analysis of the composites by XRD revealed of $\alpha$-SiC(6H, 4H), $ZrB_2$, $Al_2O_3$ and $\beta$-SiC(15R). Flexural strength showed the highest of 315.46MPa for composites added with 3wt% $Al_2O_3+Y_2O_3$ additives at room temperature. Owing to crack deflection and crack bridging of fracture toughness mechanism, the fracture toughness showed the highest of $5.5328MPa{\cdot}m^{1/2}$ for composites added with 2wt% $Al_2O_3+Y_2O_3$ additives at room temperature.

• 한국세라믹학회지
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• 제29권1호
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• pp.35-40
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• 1992

Porous glass in the ZrO2-SiO2 system containing up to 30 mol% zirconia were prepared from the mixed solutions of Zr(O.nC3H7)4 and partially prehydrolyzed TEOS by the sol-gel method. Pore characteristics, physical properties and alkali resistance were investigated. The gels converted into the porous glass by heating at $700^{\circ}C$, it was found that the glass like skeleton was already made up in lower temperature regions. The specific surface area of the porous glass was 227 $m^2$/g, average mean pore size was about 19$\AA$ and porosity was 19.2%, pore characteristics and physical properties depended on heating temperature. Alkali resistance of the porous glass increased as the zirconia content increased, because of the appearance of Zr-enriched layer at glass surface.

• 센서학회지
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• 제4권1호
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• pp.35-42
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• 1995

NASICON 분말을 합성하기 위하여 볼밀링법을 사용하였다. 사용된 원료 분말은 3종류 였으며, 이것은 $ZrO_{2}\;+\;Na_{3}PO_{4}\;+\;SiO_{2}$의 미세 및 조립 분말, 그리고 $ZrSiO_{4}\;+\;Na_{3}PO_{4}$의 미세 분말이다. 미세 분말은 $1100^{\circ}C$ 혹은 그 이상의 온도에서 쉽게 반응하여 원하는 생성물로 바뀌었지만, 조립 분말을 사용하면 $1170^{\circ}C$에서도 불완전한 반응이 일어났다. NASICON 전해질을 제조할 때, 원료 분말의 입도가 작을수록 소결 후의 밀도는 높아졌다. 이론적인 밀도($3.27g/cm^{3}$)의 95% 이상의 단일상 NASICON 전해질은 $1150{\sim}1170^{\circ}C$에서 $40{\sim}60$시간 소결할 때에 얻어질 수 있었다.

• Journal of Electrical Engineering and Technology
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• 제4권4호
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• pp.538-545
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• 2009

The SiC-$ZrB_2$ composites were fabricated by combining 30, 35, 40 and 45vol.% of Zirconium Diboride (hereafter, $ZrB_2$) powders with Silicon Carbide (hereafter, SiC) matrix. The SiC-$ZrB_2$ composites, the sintered compacts, were produced through Spark Plasma Sintering (hereafter, SPS), and its physical, electrical, and mechanical properties were examined. Also, the thermal image analysis of the SiC-$ZrB_2$ composites was examined. Reactions between $\beta$-SiC and $ZrB_2$ were not observed via X-Ray Diffractometer (hereafter, XRD) analysis. The relative density of the SiC+30vol.%$ZrB_2$, SiC+35vol.%$ZrB_2$, SiC+40vol.%$ZrB_2$, and SiC+45vol.%$ZrB_2$ composites were 88.64%, 76.80%, 79.09% and 88.12%, respectively. The XRD phase analysis of the sintered compacts demonstrated high phase of SiC and $ZrB_2$ but low phase of $ZrO_2$. Among the SiC-$ZrB_2$ composites, the SiC+35vol.%$ZrB_2$ composite had the lowest flexural strength, 148.49MPa, and the SiC+40vol.%$ZrB_2$ composite had the highest flexural strength, 204.85MPa, at room temperature. The electrical resistivities of the SiC+30vol.%$ZrB_2$, SiC+35vol.%$ZrB_2$, SiC+40vol.%$ZrB_2$ and SiC+45vol.%$ZrB_2$ composites were $6.74\times10^{-4}$, $4.56\times10^{-3}$, $1.92\times10^{-3}$, and $4.95\times10^{-3}\Omega{\cdot}cm$ at room temperature, respectively. The electrical resistivities of the SiC+30vol.%$ZrB_2$, SiC+35vol.%$ZrB_2$ SiC+40vol.%$ZrB_2$ and SiC+45[vol.%]$ZrB_2$ composites had Positive Temperature Coefficient Resistance (hereafter, PTCR) in the temperature range from $25^{\circ}C$ to $500^{\circ}C$. The V-I characteristics of the SiC+40vol.%$ZrB_2$ composite had a linear shape. Therefore, it is considered that the SiC+40vol.%$ZrB_2$ composite containing the most outstanding mechanical properties, high resistance temperature coefficient and PTCR characteristics among the sintered compacts can be used as an energy friendly ceramic heater or electrode material through SPS.

• 한국진공학회지
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• 제9권4호
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• pp.341-345
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• 2000

p형 Si (100)기판 위에 reactive DC magnetron sputtering으로 증착한 $ZrO_2$박막에 대하여 증착 조건과 열처리 조건에 따른 미세구조의 변화 및 전기적 특성 변화를 관찰하였다. 증착 및 열처리 온도가 증가하고 power 증가할수록 $ZrO_2$의 굴절율은 증가되어 이상적인 2.0~2.2에 근접하였다. 상온에서 증착된 $ZrO_2$ 박막은 비정질이며 $300^{\circ}C$에서 증착한 경우 $ZrO_2$박막은 다결정이었다. 산소 분위기에서 열처리를 수행한 박막의 RMS 값은 증착직후보다 높아지고 계면 산화막은 산소의 확산에 의해 두께가 증가하였다. A1/$ZrO_2$/p-type Si(100)의 C-V과 I-V 특성을 관찰하였고, 그 결과 산소분위기에서 열처리하는 경우 계면 산화막의 두께증가로 Cmax 및 누설전류가 감소함을 알 수 있었다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1993년도 추계 학술발표 강연 및 논문 개요집
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• pp.34-35
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• 1993

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권2호
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• pp.92-97
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• 2000

The mechanical and electrical properties of the hot-pressed and annealed $\beta$-SiC+39vol. %ZrB2 electroconductive ceramic composites were investigated by adding 1, 2, 3wt% Al2O3+Y2O3(6:4wt%) of the liquid forming additives. In this microstructures, no reactions were observed between $\beta-SiC$ and ZrB2. The relative density is over 90.8% of the theoretical density and the porosity decreased with increasing Al2O3+Y2O3 contents. Phase analysis of the composites by XRD revealed $\alpha-SiC(6H, 4H)$, ZrB2 and $\beta-SiC$(15R). Flexural srength showed the highest of 315.5MPa for composites added with 3wt% Al2O3+Y2O3 additives as room temperature. Owing to crack deflection and crack bridging of fracture toughness mechanism, the fracture toughness showed 5.5MPa.m1/2 and 5.3MPa.m1/2 for composites added with 2wt% and 3wt% Al2O3+Y2O3 additives respectively at room temperature. The area fraction of the elongated SiC grain in the etched surface of sample showed 65% and 65.1% for composite added with 2wt% and 3wt% Al2O3+Y2O3 additives respectively. The electrical resistivity at room temperature. The electrical resistivity of the composites wall all positive temperature coefficient(PTCR) against temperature up to $700^{\circ}C$.

• 한국결정성장학회지
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• 제18권1호
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• pp.5-9
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• 2008

코디어라이트는 낮은 열팽창계수를 가지나, 디젤 배기가스 담체로써 사용하기에는 기계적 강도가 낮고, 황에 대한 내산성이 취약한 문제를 가지고 있다. 본 연구에서는 $SiO_2,\;Al_2O_3$, MoOx, $Cr_2O_3$ 및 $Nb_2O_5$가 첨가된 $ZrTiO_4$의 물성을 XRD, SEM, UTM 및 열팽창계수 측정 장치를 사용하여 측정하고 분석하였다. $ZrTiO_4$은 $TiO_2$와 $ZrO_2$를 출발원료로 볼빌에서 혼합한 후 $1240^{\circ}C$ 이상의 온도에서 3시간 하소함으로써 monoclinic 구조로 합성되었다. 꺽임강도 및 열팽창계수 측정용 시편은 $ZrTiO_4$와 첨가제를 혼합 성형하고, $1300^{\circ}C$에서 3 시간 소성함으로써 얻어졌다. 소결된 시편의 기공율은 첨가제의 함량이 5%로 증가함에 따라 첨가제의 종류에 관계없이 감소하였으나, 첨가제의 함량이 10% 로 증가하면 기공율은 포화되었다. 꺾임강도는 $Al_2O_3$를 5, 10 wt% 첨가 시 큰 폭으로 증가하였으나, 나머지 첨가제에 대해서는 꺾임강도가 감소하였다. $ZrTiO_4$의 열팽창계수 $(1000^{\circ}C)$는 $Nb_2O_5$를 제외하고는 첨가제가 증가할수록 계속적으로 감소하였으며, 특히, $SiO_2$가 첨가된 경우 가장 낮은 열팽창계수를 나타내었다.