• Journal of the Korean Ceramic Society
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• v.28 no.1
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• pp.11-18
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• 1991

A precipitation method, one of the most effective liquid phase reaction methods, was adopted in order to prepare high-tech Al2O3/ZrO2 composite ceramics, and the effects of stress-induced phase transformation of ZrO2 on thermal shock behavior of Al2O3-ZrO2 ceramics were investigated. Al2(SO4)3.18H2O, ZrOCl2.8H2O and YCl3.6H2O were used as starting materials and NH4OH as a precipitation agent. Metal hydroxides were obtained by single precipitation(process A) and co-precipitation(process B) method at the condition of pH=7, and the composition of Al2O3-ZrO2 composites was fixed as Al2O3-15v/o ZrO2(+3m/o Y2O3). Critical temperature difference showing rapid strength degradation by thermal shock showed higher value in Al2O3/ZrO2 composites(process A : 20$0^{\circ}C$, process B : 215$^{\circ}C$) than in Al2O3(175$^{\circ}C$). The improvement of thermal shock property for Al2O3/ZrO2 composites was mainly due to the increase of strength at room temperature by adding ZrO2. The strength degradation was more severe for the sample with higher strength at room temperature. Crack initiation energies by thermal shock showed higher values in Al2O3/ZrO2 composites than in Al2O3 ceramics due to increase of fracture toughness by ZrO2.

• Electrical & Electronic Materials
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• v.16 no.9
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• pp.64.2-65
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• 2003

A 4 nm layer of ZrOx (targeted x-2) was deposited on an interfacial layer(IL) of native oxide (SiO, t∼1.2 nm) surface on 200 mm Si wafers by a manufacturable atomic layer chemical vapor deposition technique at 30$0^{\circ}C$. Some as-deposited layers were subjected to a post-deposition, rapid thermal annealing at $700^{\circ}C$ for 5 min in flowing oxygen at atmospheric pressure. The experimental x-ray diffraction, x-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, and high-resolution parallel electron energy loss spectroscopy results showed that a multiphase and heterogeneous structure evolved, which we call the Zr-O/IL/Si stack. The as-deposited Zr-O layer was amorphous $ZrO_2$-rich Zr silicate containing about 15% by volume of embedded $ZrO_2$ nanocrystals, which transformed to a glass nanoceramic (with over 90% by volume of predominantly tetragonal-$ZrO_2$(t-$ZrO_2$) and monoclinic-$ZrO_2$(m-$ZrO_2$) nanocrystals) upon annealing. The formation of disordered amorphous regions within some of the nanocrystals, as well as crystalline regions with defects, probably gave rise to lattice strains and deformations. The interfacial layer (IL) was partitioned into an upper Si $o_2$-rich Zr silicate and the lower $SiO_{x}$. The latter was sub-toichiometric and the average oxidation state increased from Si0.86$^{＋}$ in $SiO_{0.43}$ (as-deposited) to Si1.32$^{＋}$ in $SiO_{0.66}$ (annealed). This high oxygen deficiency in $SiO_{x}$ indicative of the low mobility of oxidizing specie in the Zr-O layer. The stacks were characterized for their dielectric properties in the Pt/{Zr-O/IL}/Si metal oxide-semiconductor capacitor(MOSCAP) configuration. The measured equivalent oxide thickness (EOT) was not consistent with the calculated EOT using a bilayer model of $ZrO_2$ and $SiO_2$, and the capacitance in accumulation (and therefore, EOT and kZr-O) was frequency dispersive, trends well documented in literature. This behavior is qualitatively explained in terms of the multi-layer nanostructure and nanochemistry that evolves.ves.ves.

• Journal of Industrial Technology
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• v.20 no.A
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• pp.247-256
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• 2000

Precursor gels with the composition of $xZrO_2{\cdot}(100-x)SiO_2$ systems (x=10, 20 and 30 mol%) were prepared by the sol-gel method. Kinetic parameters, such as activation energy, Avrami's exponent, n, and dimensionality crystal growth value, m, have been simultaneously calculated from the DTA data using Kissinger and Matusita equations. The crystallite size dependence on tetragonal to monoclinic transformation of $ZrO_2$ was investigated using XRD, in relation to the fracture toughness. The crystallization of tetragonal $ZrO_2$ occurred through 3-dimensional diffusion controlled growth(n=m=2) and the activation energy for crystallization was calculated using Kissinger and Matusita equations, as about $310{\sim}325{\pm}10kJ/mol$. The growth of $t-ZrO_2$, in proportion to the cube of radius, increased with increasing heating temperature and heat-treatment time. It was suggested that the diffusion of Zr4+ions by Ostwald ripening was rate-limiting process for the growth of $t-ZrO_2$ crystallite size. The fracture toughness of $xZrO_2{\cdot}(100-x)SiO_2$ systems glass ceramics increased with increasing crystallite size of $t-ZrO_2$. The fracture toughness of $30ZrO_2{\cdot}70SiO_2$ system glass ceramics heated at $1,100^{\circ}C$ for 5 h was $4.84Mpam^{1/2}$ at a critical crystaliite size of 40 nm.

• Journal of the Korean Ceramic Society
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• v.34 no.6
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• pp.577-582
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• 1997

The mechanical properties of Al2O3-ZrO2 composites fabricated by RBAO(reaction bonded aluminium oxide) process were investigated. As the amount of ZrO2 increased the sinstered density of Al2O3-ZrO2 composites decreased slightly, but wear resistance was enhanced. Bending strength of Al2O3-ZrO2 composites increased in proportion to the amount of al in case of a fixed ZrO2 content. When the amount of Al was fixed bending strength reached its maximum value at 25 wt% ZrO2. The fracture toughness(K1c) increased with increasing content of ZrO2, but decreased with increasing Al amount. On the other hand, the fracture mode of Al2O3-ZrO2 composites was the mixed mode of inter-and transgranular fracture.

• Journal of the Korean Ceramic Society
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• v.34 no.2
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• pp.145-156
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• 1997

ZrO2 phase transformations depending on the type and amount of dopants and the sintering temperatures were studied for the 2 components (CaO-, Y2O3-, MgO-ZrO2) and the 3 components(MgO-ZrO2-Al2O3)ZrO2 powder by X-ray diffraction and Raman spectroscopy. In the CaO- and Y2O3-ZrO2 systems, as the CaO and Y2O3 contents increased to 6~15mol% and 3~15mol% respectively, we were not able to identify between tetragonal and cubic in the X-ray diffraction patterns. On the other hand, all Raman modes shifted to lower wavenumbers, decreasing in intensity and the number of bands, markedly. These phenomena were caused by tetragonallongrightarrowcubic phase transformation and interpreted by the breakdown of the wave vector selection rule(k=0) and the structural disorder associated with the formation of oxygen sublattice which was caused by the substitution between Zr4+ ion and Ca2+ or Y3+ ion in ZrO2 matrix. The monoclinic to cubic phase transformation occurred in 10mol% MgO-ZrO2 system. As the Al2O3 content increased from 0 to 20mol% in the MgO-ZrO2-Al2O3 systems, cubic phase transformed to monoclinic phase, this is because the MgO didn't play a role in a stabilizer because of the formation of the spinel(MgAl2O4) by the reaction between MgO and Al2O3, Also, the ZrO2 phase transformation was explained by the change of it's lattice parameters depending on the type and amount of dopants. Namely, as the amount of dopant increased to 10~13mol%, the axial ra-tio c/a came close to unity with increasing the lattice parameter a and decreasing the lattice parameter c. At that time, the tetragonallongrightarrowcubic phase transformation occurred.

• Journal of the Korean Ceramic Society
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• v.32 no.7
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• pp.853-857
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• 1995

ZrSiO4 powders were prepared from partially hydrolyzed solution of Si(OC2H5)4 and ZrOCl2.8H2O solution by the sol-gel method and formation rate of ZrSiO4 on the reaction parameter was investigated. In order to prepare homogeneous ZrSiO4 precursor gels, the H2O/Si(OC2H5)4 molar ratio of about 2, the pH of the ZrOCl2.8H2O solution fo about 4 and stirring time of the mixed solutions of about 2 hrs were appropriate. Formation of temperature of ZrSiO4 reduced about 15$0^{\circ}C$ by milling and formation of ZrSiO4 at 1300~135$0^{\circ}C$ showed an accelerative increase through the hedvall effect by silica.

• Journal of the Korean Ceramic Society
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• v.24 no.1
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• pp.33-40
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• 1987

The investigation includes phase equilibria of Al2O3-HfO2 Cr2O3-ZrO2, Cr2O3-HfO2, Al2O3-Cr2O3-ZrO2, Al2O3-Cr2O3-HfO2, Al2O3-ZrO2-HfO2, Cr2O3-ZrO2-HfO2, Al2O3-Cr2O3-ZrO2-HfO2. In the systems the solubility near the end members has been studied at 1500$^{\circ}C$ and 1600$^{\circ}C$, respectively. Selective Compositions were investigated in the area of the guarternary system where the phae relation was examined.

• Applied Chemistry for Engineering
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• v.17 no.3
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• pp.250-254
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• 2006

Reaction of $CO_2$ with $Li_{2}ZrO_{3}$ has been investigated in a TGA and the effects of $H_{2}$ and CO on the removal of $CO_{2}$ using $Li_{2}ZrO_{3}$ were evaluated in a packed bed reactor. The initial rate of $CO_{2}$ removal reaction of $Li_{2}ZrO_{3}$ increased with the increase of gas flow rate up to 100 mL/min and then was maintained, which implied the disappearance of the gas film resistance. The reaction of $CO_{2}$ with $Li_{2}ZrO_{3}$ took place as the first order and the range of optimum temperature was found to be about $500{\sim}600^{\circ}C$. XRD and SEM analysis showed the formation of crystalline $Li_{2}ZrO_{3}$ and porous $Li_{2}ZrO_{3}$/$ZrO_{2}$. The presence of $H_{2}$ did not affect the adsorption of $CO_2$ with $Li_2ZrO_3$. On the other hand, CO inhibited the sorption of $CO_{2}$ into $Li_{2}CO_{3}$(L) on $Li_{2}ZrO_{3}$.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.215.1-215.1
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• 2015

본 연구에서는 용액 공정 기반 ZrO2 절연막의 우수한 특성을 확인하기 위해 SiO2 절연막을 가지는 IGZO (Indium-Gallium-Zinc Oxide) 박막 트랜지스터와 비교했다. In:Ga:Zn=1:1:1의 비율의 0.3 M IGZO 용액과 0.2 M ZrO2용액을 사용하였다. ZrO2 박막 트랜지스터는 0.2M ZrO2 용액을 5번 반복 증착하며 140nm 두께의 ZrO2 절연막을 가지는 IGZO 박막 트랜지스터와 비교대상으로 동일한 두께의 SiO2의 절연막을 가지는 IGZO 박막 트랜지스터를 제작하였다. ZrO2 박막 트랜지스터의 문턱전압은 4.3V로 SiO2 박막 트랜지스터의 -6.1V보다 낮았고, 이동도는 $1.2356cm^2/V{\cdot}s$로 $0.0554cm^2/V{\cdot}s$ 보다 약 20배 높았다. 실험 결과를 통해 ZrO2를 절연막으로 사용한 박막 트랜지스터의 특성이 더 향상되었음을 확인하였다.

• Journal of the Korean Ceramic Society
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• v.42 no.8 s.279
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• pp.561-566
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• 2005

For the homogeneous dispersion of $ZrO_2$ particles in $Al_2O_3/ZrO_2$ceramics, Zr-precusors were mixed with oxide $Al_2O_3$powders by chemical routes such as partial precipitation or partial polymerization of Zr-nitrate solutions. In case of the mechanical mixing of ultrafine $Al_2O_3$ and $ZrO_2$ oxide powders, relatively homogeneous dispersion was difficult to achieve so that the particle size and distributions of $ZrO_2$ were relatively inhomogeneous after sintering at high temperature. But when the Zr-Y-hydroxide were co-precipitated to ultrafine $Al_2O_3$ oxide powders followed by calcinations, homogeneous dispersion of nano-sized $ZrO_2$ particles in $Al_2O_3/ZrO_2$ composite ceramics were obtained. But because of the coalescence of dispersed $ZrO_2$ particles, dispersed $ZrO_2$ was grown up to more than 0.2${mu}m$ (200 nm) when sintered at the temperature of higher than $1500^{\circ}C$ But when the sintering temperature was kept to lower than $1400^{\circ}C$ by using nano-sized $\alpha-alumina$, the particle size of dispersed $ZrO_2$ could be sustained below 0.1 ${\mu}m$. But the coalescence of dispersed $ZrO_2$ between $Al_2O_3$ particles could not be avoided so that the mechanical properties were not enhanced contrary to the expectations. So Zr-polyester precursors were precipitated and coated to the surface of ultrafine $\alpha-alumina$ powders by the polymerization of Ethylene Glycol with Citric Acid and Zirconium Nitrate. By this dispersion much more uniform dispersion of $ZrO_2$ was achieved at $1450\~1600^{\circ}C$ of sintering temperature ranges. And due to especially discrete dispersion of $ZrO_2$ between $Al_2O_3$ particles, their mechanical strength was more enhanced than mechanical mixing or hydroxide precipitation methods.