• Korean Journal of Materials Research
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• v.24 no.5
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• pp.255-258
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• 2014

Zirconium boride is an artificial or which is rarely found in the nature. $ZrB_2$ is popular in the hard material industry because it has a high melting point, excellent mechanical properties and chemical stability. There are two known methods to synthesize $ZrB_2$. The first involves direct reaction between Zr and B, and the second is by reduction of the metal halogen. However, these two methods are known to be unsuitable for mass production. SHS(Self-propagating High-temperature Synthesis) is an efficient and economic method for synthesizing hard materials because it uses exothermic reactions. In this study, $ZrB_2$ was successfully synthesized by subjecting $ZrO_2$, Mg and $B_2O_3$ to SHS. Because of the high combustion temperature and rapid combustion, in conjunction with the stoichiometric ratio of $ZrO_2$, Mg and $B_2O_3$; single phase $ZrB_2$ was not synthesized. In order to solve the temperature problem, Mg and NaCl additives were investigated as diluents. From the experiments it was found that both diluents effectively stabilized the reaction and combustion regime. The final product, made under optimum conditions, was single-phase $ZrB_2$ of $0.1-0.9{\mu}m$ particle size.

• Journal of Electrical Engineering and Technology
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• v.8 no.6
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• pp.1474-1480
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• 2013

Silicon carbide (SiC)-zirconium diboride ($ZrB_2$) composites were prepared by subjecting a 60:40 vol% mixture of ${\beta}$-SiC powder and $ZrB_2$ matrix to spark plasma sintering (SPS) in 15 $mm{\Phi}$ and 20 $mm{\Phi}$ molds. The 15 $mm{\Phi}$ and 20 $mm{\Phi}$ compacts were sintered for 60 sec at $1500^{\circ}C$ under a uniaxial pressure of 50 MPa and argon atmosphere. Similar composites were simulated using $Flux^{(R)}$ 3D computer simulation software. The current and power densities of the specimen sections of the simulated SiC-$ZrB_2$ composites were higher than those of the mold sections of the 15 $mm{\Phi}$ and 20 $mm{\Phi}$ mold simulated specimens. Toward the centers of the specimen sections, the current densities in the simulated SiC-$ZrB_2$ composites increased. The power density patterns of the specimen sections of the simulated SiC-$ZrB_2$ composites were nearly identical to their current density patterns. The current densities of the 15 $mm{\Phi}$ mold of the simulated SiC-$ZrB_2$ composites were higher than those of the 20 $mm{\Phi}$ mold in the center of the specimen section. The volume electrical resistivity of the simulated SiC-$ZrB_2$ composite was about 7.72 times lower than those of the graphite mold and the punch section. The power density, 1.4604 $GW/m^3$, of the 15 $mm{\Phi}$ mold of the simulated SiC-$ZrB_2$ composite was higher than that of the 20 $mm{\Phi}$ mold, 1.3832 $GW/m^3$. The $ZrB_2$ distributions in the 20 $mm{\Phi}$ mold in the sintered SiC-$ZrB_2$ composites were more uniform than those of the 15 $mm{\Phi}$ mold on the basis of energy-dispersive spectroscopy (EDS) mapping. The volume electrical resistivity of the 20 $mm{\Phi}$ mold of the sintered SiC-$ZrB_2$ composite, $6.17{\times}10^{-4}{\Omega}cm$, was lower than that of the 15 $mm{\Phi}$ mold, $9.37{\times}10^{-4}{\Omega}{\cdot}cm$, at room temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.87-87
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• 2009

The composites were fabricated by adding 30, 40, 50, 60[vol.%] Zirconium Diboride(hereafter, $ZrB_2$) powders as a second phase to Silicon Carbide(hereafter, SiC) matrix. SiC-$ZrB_2$ composites were sintered by Spark Plasma Sintering(hereafter, SPS) in argon gas atmosphere. The relative density SiC+30[vol.%]$ZrB_2$, SiC+40[vol.%]$ZrB_2$, SiC+50[vol.%]$ZrB_2$ and SiC+60[vol.%]$ZrB_2$ composites are 94.98[%], 99.57[%], 96.58[%] and 93.62[%] respectively.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1336-1338
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• 1997

Relations between the composites of SiC-$ZrB_2$ electro-conductive ceramic composites and their electrical resistivity, as well as their temperature, were investigated. The electrical resistivity of hot-pressed composites was measured by the Pauw method in the temperature of RT to $100^{\circ}C$. The electrical resistivity of the composites follow the electrical conduction model for a homogenous mixture of two kinds of particles with different conductivity. Also the electrical resistivity versus temperature curves indicate the formation of local chains of $ZrB_2$ particles. In the case of SiC-$ZrB_2$ composites containing above 30Vol.% $ZrB_2$ showed PTCR, whereas the electrical resistivity of SiC-15Vol.% $ZrB_2$ showed NTCR.

• Journal of the Korean Ceramic Society
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• v.47 no.6
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• pp.578-582
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• 2010

$ZrB_2$ has a melting point of $3245^{\circ}C$ and a relatively low density of $6.1\;g/cm^3$, which makes this a candidate for application to ultrahigh temperature environments over $2000^{\circ}C$. Beside these properties, $ZrB_2$ is known to have excellent resistance to thermal shock and oxidation compared with other non-oxide engineering ceramics. In order to enhance such oxidation resistance, SiC was frequently added to $ZrB_2$-based systems. Due to nonsinterability of $ZrB_2$-based ceramics, research on the sintering aids such as $B_4C$ or $MoSi_2$ becomes popular recently. In this study, densification and high-temperature properties of $ZrB_2$-SiC ceramics especially with $B_4C$ are investigated. $ZrB_2$-20 vol% SiC system was selected as a basic composition and $B_4C$ or C was added to this system in some extents. Mixed powders were sintered using hot pressing (HP). With sintered bodies, densification behavior and high-temperature (up to $1400^{\circ}C$) properties such as flexural strength, hardness, and so on were examined.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.2
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• pp.104-108
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• 1999

The electrical conductive mechanism and temperature dependence of electrical resistivity of $\alpha-SiC-ZrB_2$ composites with $ZrB_2$ contents were investigated. The electrical resistivity of hot-pressed composites was measured by the Pauw method form $25^{\circ} to 700^{\circ}C$. The electrical resistivity of the composites follow the electrical conduction model for a homogeneous mixture of two kind of particles with different conductivity. Also, the electrical resistivity versus temperature curves indicate the formation of local chains of $ZrB_2$ particles. In case of $\alpha-SiC-ZrB_2$ composites containing above 39vol.% $ZrB_2$ showed positive temperature coefficient resistance(PTCR), whereas the electrical resistivity of $\alpha-SiC-21vol.% ZrB_2$ showed negative temperature coefficient resistance(NTCR).

• Korean Journal of Materials Research
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• v.11 no.7
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• pp.562-568
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• 2001

Devitrifiable solder glass/$ZrB_2$ sintered composites were prepared by using glass with the composition of $60ZnO-20B_2O_3-10SiO_2-10PbO$(in wt%) and $ZrB_2$, powder as starting materials under the $N_2$atmosphere. $ZrB_2$which the good conduction materials showed sensitive oxidation characteristics, because some parts of the $ZrB_2$in specimens changed into the insulated phase of $ZrO_2$. These Phenomena would be estimated that it caused a few amount of residual oxygen in the furnace and/or specimens and the coordination number change of $B_2O_3$ in the glass. The sintering temperature and the mixed ratios of each phase were control of large ranged the resistivity ranged from 10 to 10$^{3}{\Omega}/cm^2$ orders, and to make a conductible microstructure. From these results, it would be explained that the conduction path of $ZrB_2$particles built up within sintered glass matrix.

• Journal of the Korean Ceramic Society
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• v.50 no.6
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• pp.410-415
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• 2013

$ZrB_2$-SiC ceramics are fabricated via hot pressing with different ratios of submicron or nano-sized SiC in a $ZrB_2$-20 vol%SiC system, in order to examine the effect of the SiC size ratio on the microstructures and physical properties, such as thermal conductivity, hardness, and flexural strength, of $ZrB_2$-SiC ceramics. Five different $ZrB_2$-SiC ceramics ($ZrB_2$-20 vol%[(1-x)SiC + xnanoSiC] where x = 0.0, 0.2, 0.5, 0.8, 1.0) are prepared in this study. The mean SiC particle sizes in the sintered bodies are highly dependent on the ratio of nano-sized SiC. The thermal conductivities of the $ZrB_2$-SiC ceramics increase with the ratio of nano-sized SiC, which is consistent with the percolation behavior. In addition, the $ZrB_2$-SiC ceramics with smaller mean SiC particle sizes exhibit enhanced mechanical properties, such as hardness and flexural strength, which can be explained using the Hall-Petch relation.

• Korean Journal of Materials Research
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• v.20 no.4
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• pp.217-222
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• 2010

Zirconium diboride (ZrB2) and mixed diboride of (Zr0.7Ta0.3)B2 containing 30 vol.% silicon carbide (SiC) composites were prepared by hot-pressing at $1800^{\circ}C$. XRD analysis identified the high crystalline metal diboride-SiC composites at $1800^{\circ}C$. The TaB2 addition to ZrB2-SiC showed a slight peak shift to a higher angle of 2-theta of ZrB2, which confirmed the presence of a homogeneous solid solution. Elastic modulus, hardness and fracture toughness were slightly increased by addition of TaB2. A volatility diagram was calculated to understand the oxidation behavior. Oxidation behavior was investigated at $1500^{\circ}C$ under ambient and low oxygen partial pressure (pO2~10-8 Pa). In an ambient environment, the TaB2 addition to the ZrB2-SiC improved the oxidation resistance over entire range of evaluated temperatures by formation of a less porous oxide layer beneath the surface SiO2. Exposure of metal boride-SiC at low pO2 resulted in active oxidation of SiC due to the high vapor pressure of SiO (g), and, as a result, it produced a porous surface layer. The depth variations of the oxidized layer were measured by SEM. In the ZrB2-SiC composite, the thickness of the reaction layer linearly increased as a function of time and showed active oxidation kinetics. The TaB2 addition to the ZrB2-SiC composite showed improved oxidation resistance with slight deviation from the linearity in depth variation.

• Journal of the Korean Magnetics Society
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• v.17 no.4
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• pp.147-151
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• 2007

We have investigated the half-metallicity and magnetism for the Heusler ferromagnet $Co_2$ZrSi interfaced with semiconductor ZnTe along the (001) plane by using the full-potential linearized augmented plane wave (FLAPW) method. We considered low types of possible interfaces: ZrSi/Zn, ZrSi/Te, Co/Zn, and Co/Te, respectively. From the calculated density of states, it was found that the half-metallicity was lost at all the interfaces, however for the Co/Te system the value of minority spin density of states was close to zero at the Fermi level. These facts are due to the interface states, appeared in the minority spin gap in bulk $Co_2$ZrSi, caused by the changes of the coordination and symmetry and the hybridizations between the interface atoms. At the Co/Te interface, the magnetic moments of Co atoms are 0.68 and $0.78{\mu}_B$ for the "bridge" and "antibridge" sites, respectively, which are much reduced with respect to that ($1.15{\mu}_B$) of the bulk $Co_2$ZrSi. In the case of Co/Zn, Co atoms at the "bridge" and "antibridge" sites have magnetic moments of 1.16 and $0.93{\mu}_B$, respectively, which are almost same or slightly decreased compared to that of the bulk $Co_2$ZrSi. On the other hand, for the ZrSi/Zn and ZrSi/Te systems, the magnetic moments of Co atoms at the sub-interface layers are in the range of $1.13{\sim}1.30\;{\mu}_B$, which are almost same or slightly increased than that of the bulk $Co_2$ZrSi.