• Title/Summary/Keyword: $Zn_2SiO_4:Mn$

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Gahnite-Sillimanite-Garnet Mineral Assemblage from the Host Rocks of the Cannington Deposit, North Queensland, Australia: Relationship between Metamorphism and Zn-Mineralization (호주 퀸즈랜드 주 캔닝턴 광상 모암의 아연-첨정석-규선석-석류석에 관한 연구 :변성작용과 아연-광화작용에 대해서)

  • Kim Hyeong Soo
    • Journal of the Mineralogical Society of Korea
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    • v.17 no.4
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    • pp.309-325
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    • 2004
  • The Cannington Ag-Pb-Zn deposit, northwest Queensland, Australia developed around the host rocks composing banded and migmatitic gneisses, sillimanite-garnet schist and amphibolite. Three crystal habits of sillimanite, gahnite (Zn-spinel) and garnet porphyroblasts occurred on the host rocks of the Cannington deposit could be used to delineate metamorphism that closely associated with Zn-mineralization in the deposit. Linkages the metamorphism to Zinc-mineralization is determined in four chemical systems, KFMASH (K$_2$O-FeO-MgO-Al$_2$O$_3$-SiO$_2$-$H_2O$), KFMASHTO (K$_2$O-FeO-MgO-Al$_2$O$_3$-SiO$_2$-$H_2O$-TiO$_2$-Fe$_2$O$_3$), NCKFMASH (Na$_2$O-CaO-K$_2$O-FeO-MgO-AlO$_3$-SiO$_2$-$H_2O$) and MnNCK-FMASH (MnO-Na$_2$O-CaO-K$_2$O-FeO-MgO-AlO$_3$-SiO$_2$-$H_2O$), using THERMOCALC program (version 3.1; Powell and Holland 1988). Partial melting in MnNCKFMASH and NCKFMASH systems occurs at lower temperature than in the KFMASH and KFMASHTO systems. The partial melting temperature decreases with increasing of Na/(Na+Ca+K) of the bulk rock compositions in the MnNCKFMASH system. The host rocks have melted ca 15 vol.% in the MnNCKFMASH system at peak metamorphic conditions (634$\pm$62$^{\circ}C$ and 4.8$\pm$1.3 kbar), but partial melting have not occurred in KFMASHTO system. Based on calculations of sillimanite isograd in different systems and sillimanite modal pro-portion, prismatic and rhombic sillimanite and gahnite porphyroblasts including prismatic sillimanite inclusion probably have resulted from pressure and temperature increasing through partial melting (from 550~$600^{\circ}C$, 2.0~3.0 kbar to 700~75$0^{\circ}C$, 5.0~7.0 kbar), furthermore have experienced N-S then W-E crustal shortening during D$_1$ and D$_2$ deformation. Consequently, Zinc mineralization related to gahnite growth occurred during D$_2$ and was redistributed and upgraded by partial melting and retrograde metamorphism into structural and rheological sites during shearing in D$_3$.

Synthesis and Optical Characteristics of Green-Emitting (Mg,Zn)$Al_2O_4:Mn^{2+}$ Phosphor for 3D- PDP Applications

  • Han, Bo-Yong;Yoo, Jae-Soo;Heo, Eun-Gi;Yoo, Young-Gil
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.272-275
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    • 2009
  • A new green phosphor, ($Mg_{1-x-yZnx)$)$Al_2O_4:Mn^{2+}{_y}$ (0 x 0.6, 0.001 y 0.01), was synthesized by a flux-assisted solid reaction and its vacuum ultraviolet (VUV) excitation and emission characteristics were examined in this study. The chromaticity and peak intensity of the $(Mg_{0.79}Zn_{0.2})Al_2O_4:Mn^{2+}{_{0.01}}$ (x = 0.177, y = 0.745) phosphor were found to be more desirable than that of $Zn_2SiO_4:Mn^{2+}$ (x = 0.216, y = 0.72) phosphor as a green primary color.

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Photoluminescence of willemite ($Zn_2SiO_4$ : Mn) phosphors prepared by the MOD process (MOD법에 의해 합성한 Willemite($Zn_2SiO_4$:Mn) 형광체의 발광 특성)

  • Lee, Byeong-Woo;Lee, Seon-Gil;Cho, Hyun
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.17 no.2
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    • pp.57-62
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    • 2007
  • Willemite green phosphor powders have been prepared by the metallo-organic decomposition (MOD) method, and the photoluminescence and phase formation were studied as a function of both the firing temperature ($800{\sim}1100^{\circ}C$) and the concentration of Mn activator ($4{\sim}12 mol%$). Under 254 nm excitation source, the emission intensity of the phosphors increased with increasing the firing temperature from 800 to $1000^{\circ}C$. From the XRD analysis, the powders heat-treated above $1000^{\circ}C$ showed willemite crystal structure. The maximum emission intensity was obtained far the phosphors heat-treated at $1000^{\circ}C$ with 8 mol% of Mn content. The concentration quenching was occurred when the Mn concentration exceeded 10 mol%. The phosphor particles showed spherical shapes with the average size of $0.4{\sim}0.5{\mu}m$ by the SEM morphology.

Synthesis of Nanoparticles via Surface Modification for Electronic Applications

  • Lee, Burtrand I.;Lu, Song-Wei
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • 2000.06a
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    • pp.35-58
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    • 2000
  • The demand for sub-micrometer or nanometer functional ceramic powders with a better suspension behavior in aqueous media in increasing. Redispersible barium titanate (BT) nanocrystals, green light emitting Mn2+ doped Zn$_2$SiO$_4$ and ZnS nanoparticle phosphors were synthesized by a hydrothermal method or chemical precipitation with surface modification. The nanoparticle redispersibility for BT was achieved by using a polymeric surfactant. X-ray diffraction(XRD) results indicated that the BT particles are of cubic phase with 80 nm in size. XRD results of zinc silicate phosphor indicate that seeds play an important role in enhancing the nucleation and crystallization of Zn$_2$SiO$_4$ crystals in a hydrothermal condition. This paper describes and discuss the methods of surface modification, and the resulting related properties for BT, zinc silicate and zinc sulfide.

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The Properties of ZnS:Mn AC TFEL Device with $BaTiO_3$/$Si_3$$N_4$ Insulating Thin Film ($BaTiO_3$/$Si_3$$N_4$ 이중절연막 구조의 교류구동형 ZnS:Mn 박막 EL 표시 조자의 특성)

  • 송만호;윤기현;이윤희;한택상;오명환
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.31A no.9
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    • pp.121-127
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    • 1994
  • The capability for application of rf magnetron sputterred and post annealed BaTiO$_{3}$ thin films in dielectrics AC drived TFELD(thin film electroluminescent device) was investigated. The dielectric constant of the thin films slightly increased up to about 25 with increase fothe post annealing temperature in the range of 210$^{\circ}C$-480$^{\circ}C$. The dielectric loss was about 0.005-0.01 except for the high frequency range above 100kHz and nearly independent on post annealing temperature. The BaTiO$_{3}$ thin film used for TFELD was annealed at 480.deg. C and Si$_{3}$N$_{4}$ thin film was inserted between BaTiO$_{3}$, lower dielecrics and ZnS:Mn, phosphor layer for stable driving of the device and for fear of interdiffusion. Regardless of the frequency of the applied sine wave voltage, the threshold voltage of the prepared TFELD was 65volt and saturated brightness was about 3000cd/m$^{2}$ at 130volt(2kHz sine wave), 65volt above V$_{TH}$.

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Effect of Annealed Oxides on the Formation of Inhibition Layer During Hot-Dip Galvanizing of 590Mpa Trip Steel

  • Kim, Seong-Hwan;Huh, Joo-Youl;Lee, Suk-Kyu;Park, Rho-Bum;Kim, Jong-Sang
    • Corrosion Science and Technology
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    • v.10 no.1
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    • pp.6-12
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    • 2011
  • The selective surface oxidation of a transformation-induced-plasticity (TRIP) steel containing 1.6 wt.% Mn and 1.5 wt.% Si during annealing at $800^{\circ}C$ was investigated for its influence on the formation of an inhibition layer during hot-dip galvanizing. The selective oxidation of the alloying elements and the oxide morphology were significantly influenced by the annealing atmosphere. The pure $N_{2}$ atmosphere with a dew point $-40^{\circ}C$ promoted the selective oxidation of Mn as a crystalline $Mn_{2}SiO_{4}$ phase, whereas the $N_{2}$ + 10% $H_{2}$ atmosphere with the same dew point $-40^{\circ}C$ promoted the selective oxidation of Si as an amorphous Si-rich oxide phase. During hot-dip galvanizing, the $Mn_{2}SiO_{4}$ phase was reduced more readily by Al in the Zn bath than the Si-rich oxide phase. Consequently, the pure $N_{2}$ atmosphere resulted in a higher formation rate of $Fe_{2}Al_{5}$ particles at the Zn/steel interface and better galvanizability than the $N_{2}$ + 10% $H_{2}$ atmosphere.

Selective Surface Oxidation of 590MPa TRIP Steel and Its Effect on Hot-Dip Galvanizability (590 MPa TRIP강의 선택적 표면산화 거동과 표면 산화막이 도금특성에 미치는 영향)

  • Kim, Seong-Hwan;Im, Jun-Mo;Huh, Joo-Youl;Lee, Suk-Kyu;Park, Rho-Bum;Kim, Jong-Sang
    • Korean Journal of Metals and Materials
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    • v.49 no.4
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    • pp.281-290
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    • 2011
  • In order to gain better understanding of the selective surface oxidation and its influence on the galvanizability of a transformation-induced plasticity (TRIP) assisted steel containing 1.5 wt.% Si and 1.6 wt.% Mn, a model experiment has been carried out by depositing Si and Mn (each with a nominal thickness of 10 nm) in either monolayers or bilayers on a low-alloy interstitial-free (IF) steel sheet. After intercritical annealing at $800^{\circ}C$ in a $N_2$ ambient with a dew point of $-40^{\circ}C$, the surface scale formed on 590 MPa TRIP steel exhibited a microstructure similar to that of the scale formed on the Mn/Si bilayer-coated IF steel, consisting of $Mn_{2}SiO_{4}$ particles embedded in an amorphous $SiO_{2}$ film. The present study results indicated that, during the intercritical annealing process of 590 MPa TRIP steel, surface segregation of Si occurs first to form an amorphous $SiO_{2}$ film, which in turn accelerates the out-diffusion of Mn to form more stable Mn-Si oxide particles on the steel surface. During hot-dip galvanizing, particulate $Fe_{3}O_{4}$, MnO, and Si-Mn oxides were reduced more readily by Al in a Zn bath than the amorphous $SiO_{2}$ film. Therefore, in order to improve the galvanizability of 590 TRIP steel, it is most desirable to minimize the surface segregation of Si during the intercritical annealing process.

Effect of pH and Drying Temperature on Luminescent Properties of Zn2SiO4:Mn,Al Green Phosphors by Sol-Gel Technique (졸-겔 합성에서 pH 및 건조온도가 Zn2SiO4:Mn,Al 녹색 형광체의 발광특성에 미치는 영향)

  • Sung, Bu-Yong;Han, Cheong-Hwa;Park, Hee-Dong
    • Journal of the Korean Ceramic Society
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    • v.42 no.5 s.276
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    • pp.333-337
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    • 2005
  • In order to improve the performance of green emitting phosphors for plasma display panel, the $Zn_2SiO_4:Mn,Al$ phosphors were synthesized using sol-gel technique and studied using SEM and VUV photoluminescence spectrometer. pH values of the starting solutions (pH = 0.5$\~$2.34) were controled by HCl as the catalysis of hydrolysis and wet gels were dried at $80^{\circ}C$ and $120^{\circ}C$, respectively. We investigated the effects of pH and drying temperatures during sol-gel processes. The results indicated that the phosphor prepared at pH = 1 showed the maximum emission intensity in both drying conditions and the effect of pH of the starting solution on morphology were increased with particle size as HCl and phosphor dried at high temperature showed more spherical and smaller particles than at low.

Photoluminance Properties of ${Al_3}{GdB_4}{O_{12}}$ Phosphors Activated by $Tb^{3+} and Eu^{3+}$ ($Tb^{3+}$ 와 Eu^{3+}$로 활성화시킨${Al_3}{GdB_4}{O_{12}}$ 형광체의 발광 특성)

  • Kim, Ki-Woon;Kang, Sei-Sun;Lee, Rhim-Youl
    • Korean Journal of Materials Research
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    • v.10 no.1
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    • pp.49-54
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    • 2000
  • The new green $Al_3GdB_4O_{12}:Tb^{3+} and red Al_3GdB_4O_{12}:Eu_{3+}$ phosphors were synthesized and then characterized their optical properties for PDP application. And also the photoluminescence properties of these phosphors were compared with the commercial green $Zn_2SiO_4:Mn^{2+} and (Y,Gd)BO_3: Eu^{3+}$ red PDP phosphors. The phosphors were synthesized by solid state reaction at 115$0^{\circ}C$ for 4hr. It was found that the emitting brightness of $Al_3GdB_4O_{12}:Tb^{3+}$(15mol%) green phosphor under 147nm excitation was higher than that of commercial $Zn_2SiO_4: Mn^{2+}$ green PDP phosphor. However, the color coordinate of this new green phosphor was inferior to the commercial one. On the other hand, the emitting intensity of $Al_3GdB_4O_{12}:Eu^{3+}$(15mol%) red phosphor was smaller than the $commercial(Y,Gd)BO_3: Eu^{3+}$ red one, but the CIE coordinate was slightly improved. The excitation spectrum showed that $Al_3GdB_4O_{12}$ phosphors had a strong excitation band at $\lambda=160nm$ associated with the host absorption. And the photoluminance excitation (PLE) intensity in VUV range for $Al_3GdB_4O_{12}:Tb^{3+}$ green phosphor was higher than that of $Zn_2SiO_4: Mn^{2+}$, but the PLE intensity of $Al_3GdB_4O_{12}:Eu^{3+}$ red phosphor was smaller than $(Y,Gd)BO_3: Eu^{3+}$.

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