• 한국세라믹학회지
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• 제38권4호
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• pp.337-342
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• 2001

PDP(Plasma Display Panel)용 녹색 형광체인 Zn$_2$SiO$_4$:Mn에 채-dopant로 Al을 첨가하여 졸-겔법으로 합성하였다. 졸-겔법으로 제조한 형광체는 기존의 고상 반응에 의해 합성된 경우보다 낮은 온도(1000-110$0^{\circ}C$)에서 Zn$_2$SiO$_4$단일상을 형성하였으며, 300-500nm의 비교적 균일한 입자를 얻을 수 있었다. 또한, co-dopant인 Al을 첨가함으로써 발광휘도를 향상시키고, 전광시간을 줄일 수 있었다. 한편, TEOS의 가수분해시 $H_2O$/TEOS 비율을 조절하여 발광의 최적 조건을 조사하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.575-578
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• 2004

The charging tendency of $Zn_2SiO_4:Mn^{2+}$ phosphor surface was modified in order to improve discharging characteristic of green cell in an ac-plasma display panel (ac-PDP). The Zinc-silicate ($Zn_2SiO_4:Mn^{2+}$) green-emitting phosphor was coated with magnesium oxide(MgO), which is viable to have positive charge on the surface. After fabricating the green cell with MgO-coated $Zn_2SiO_4:Mn^{2+}$, the electrical and optical properties in the cell were examined. It was found that the dynamic voltage margin could be increased while the address time was reduced. It may be ascribed to the change of charging tendency of $Zn_2SiO_4:Mn^{2+}$ phosphor by MgO coating, which makes it possible to stable wall-charge accumulation. When $Zn_2SiO_4:Mn^{2+}$ phosphor was coated with 1.3wt%-MgO, the address time was reduced 1.2 ${\mu}s$ and the address voltage lowered 25 V without any misfiring problem, compared to those of typical $Zn_2SiO_4:Mn^{2+}$ phosphor layer. The luminescence intensity of green cell using MgO-coated phosphor layer was also improved by 10%.

• Journal of Information Display
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• 제1권1호
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• pp.35-41
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• 2000

Manganese-doped $Zn_2SiO_4$ phosphors well known as a green emitter with high luminescence efficiency were prepared by the homogeneous precipitation method, and their photoluminescence properties under vacuum-ultraviolet (VUV) excitation were investigated. $Zn_2SiO_4$:Mn phosphors obtained by this method have exhibited a high luminance of property and a spherical shape of particles. In particular, the green emission intensity of zinc orthosilicate prepared as containing around 2 mole% of manganese was much stronger than that of the commercial $Zn_2SiO_4$:Mn phosphor, while the decay time was longer. However, addition of $Al^{3+}$ and $Li^+$ into $Zn_2SiO_4$:Mn composition has significantly diminished the decay time of the phosphor without much degradation of the emission intensity.

• 전자공학회논문지 IE
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• 제43권4호
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• pp.8-12
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• 2006

본 논문에서는 $SiO_2-ZnO-B_2O_3$ 계 및 $P_2O_5$-ZnO-BaO 계의 반사율과 유전특성을 $TiO_2$의 양에 따라 조사하였다. 반사율은 $TiO_2$ 함량이 증가함에 따랴 감소하였다 여기서 $P_2O_5$-ZnO-BaO계는 $SiO_2-ZnO-B_2O_3$ 계보다 더 낮은 반사율을 나타내었으며, 유전상수는 $P_2O_5$-ZnO-BaO 계가 $SiO_2-ZnO-B_2O_3$ 계보다 높았다. 두 계 모두 유전상수는 $TiO_2$의 양에 따라 증가하는 특성을 보였다. 이 결과는 높은 반사율과 항복특성이 요구되는 PDP디스플레이의 후면 유전층에 적용할 수 있을 것으로 생각된다.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2000년도 춘계총회,특별강연,심포지움,연구발표회
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• pp.18.2-18.2
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• 2000

• 한국진공학회지
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• 제20권1호
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• pp.50-56
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• 2011

본 논문에서는 버퍼막 두께 및 열처리 온도에 따른 ZnO/b-ZnO/p-Si(111) 기반 이종접합 다이오드 전류 특성에 대한 연구가 진행되었고, b-ZnO (ZnO buffer layer) 버퍼막 두께 및 열처리 온도에 따른 p-Si(111) 기판 위에 증착시킨 ZnO 박막의 구조적, 전기적 특성 또한 연구되었다. X-ray diffraction (XRD) 방법을 이용하여 ZnO 박막의 구조적 특성을 측정하였고, semiconductor parameter analyzer를 이용하여 ZnO/b-ZnO/p-Si(111) 이종접합 다이오드의 I-V 특성을 평가하였다. XRD 분석 결과 버퍼막 열처리 온도 $700^{\circ}C$, 버퍼막 두께 70 nm에서 ZnO 박막은 우세한 (002) 방향의 c-축 배향성을 갖는 육방정계(hexagonal wurtize) 결정 구조를 나타내었다. 전기적 특성인 운반자 농도, 비저항 값의 경우에는 버퍼막 열처리 온도 $700^{\circ}C$, 버퍼막 두께 50 nm에서 우수한 전기적 특성(비저항: $2.58{\times}10^{-4}[{\Omega}-cm]$, 운반자 농도: $1.16{\times}10^{20}[cm^{-3}]$)을 보였다. 또한 ZnO/b-ZnO/p-Si(111) 이종접합 다이오드의 전류 특성은 버퍼막 열처리 온도 $700^{\circ}C$에서 버퍼막 두께가 증가할수록 전류 특성이 향상되는 경향을 보였다.

• 한국표면공학회지
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• 제41권4호
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• pp.169-173
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• 2008

The objective of this study is to coat the $SiO_2$ layer uniformly on the ZnS:Cu phosphors by using Sol-Gel method. From results of SEM micrographs observation, XRD and XPS analysis, it could be confirmed that $SiO_2$ layer was relatively well coated on ZnS:Cu particles. $Ag_2S$ was used as a decoding chemical to analyze the dense and uniform coating performance of $SiO_2$ layer on phosphor particles. It could be concluded that phosphors synthesized from our two step replacement method showed strong blue peak comparing to other method and rather weak green peak also. Obtained particle size of phosphors were about 20m diameter. Luminescence properties of the phosphors were examined by photoluminescence spectra at the excitation wavelength of 270 nm.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.271-278
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• 2006

Green light emitting $Zn_2SiO_4$Mn and Al co-doped $Zn_2SiO_4$:Mn phosphor were synthesized by a sol-gel method combined with a furnace firing. The luminescent properties of the sample have been investigated. We have found that the phosphor powder with uniform shape show the maximum luminescent intensity when it is prepared with sol-gel method and fired at relatively high temperature ($1100{\sim}1300^{\circ}C$).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.968-971
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• 2003

Due to a low efficiency of phosphor with large Stoke shift in Vacuum Ultra Violet (VUV) excitation environment, new PDP phosphors which can be excited in UV excitation environment need to be developed. In this study, $Zn_2SiO_4:Tb$ phosphor was synthesized by solid-state reaction method at $1300^{\circ}C$ with varying Tb concentration, and its cross relaxation effect was observed by Photoluminescence (PL) measurement. In order to decrease $^5D_3{\to}7F_j$ transition with blue emission in $Zn_2SiO_4:Tb$ phosphor, Dy, co-activator element, was added to $Zn_2SiO_4:Tb$ phosphor. In 254nm excitation environment, broad-emission peak was observed around 524nm, green emission.

• Transactions on Electrical and Electronic Materials
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• 제8권3호
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• pp.121-124
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• 2007

The $Zn_2SiO_4:Mn$ phosphors were prepared using polymer matrix technique in order to improve the performance of green emitting phosphors for plasma display panel(PDP). $Zn_2SiO_4:Mn$ phosphor exhibits a strong green emission around 520-530 nm. The emission intensity and particle size of powders were controlled by sintering temperature and raw material composition. The zinc silicate $Zn_2SiO_4:Mn$ single phase were obtained at lower temperature than prepared by solid-state reaction method. PL luminance of $Zn_2SiO_4:Mn$ phosphor was similar to the commercial material.