• Food Science of Animal Resources
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• v.28 no.1
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• pp.27-31
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• 2008

This study investigated the effects of copper and zinc sources on growth performance, nutrient digestibility, carcass traits and meat characteristics in finishing pigs. Dietary treatments included 1) inorganic copper ($CuSO_4{\cdot}5H_2O$ 30ppm), 2) organic copper (Cu-methionine, 30 ppm), 3) inorganic zinc (ZnO, 80 ppm) and 4) organic zinc (Zn-methionine, 80 ppm). ZnO treatment improved the ADFI (average daily feed intake) compared to Cu-met and Zn-met treatments (p<0.05) during 5 weeks of treatment. However, during the entire experimental period, the ADG (average daily gain), ADFI and F:G ratio (feed conversion ratio) were not significantly different among the treatments (p>0.05). DM and N digestibility were not significantly different among the treatments after 5 weeks (p>0.05). At the end of the experiment, DM and N digestibility were decreased with Zn-met treatment relative to the other three treatments. The pH value of meat from $CuSO_4$ treated pigs was greater than Zn-met and ZnO treated pigs (p<0.05). Sensory evaluation was carried out for randomly selected (n = 16) paired loin samples. Meat color levels were increased (p<0.05) with Cu treatments compared to Zn treatments. $CuSO_4$ decreased the marbling of meat relative to the other treatments (p<0.05). The firmness was greater with ZnO treatment compared to Cu-met and ZnO treatments (p<0.05). These results indicate that inorganic Zn can improve growth performance, however, inorganic Cu and Zn are as effective as organic Cu and Zn at improving nutrient digestibility, carcass traits and meat quality. This form of organic additive can be friendlier to the environment than inorganic supplements.

• Journal of Conservation Science
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• v.35 no.4
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• pp.373-383
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• 2019

We characterized the smelting process and smelting furnace through scanning electron microscopy-energy dispersive spectroscopy, wavelength dispersive X-ray fluorescence, X-ray diffraction, and raman micro-spectroscopy with 13 relics including slags and furnace walls excavated from square-shaped building sites and pits of the Three Kingdoms site at the Ungyo site section I. Our results revealed that the principal components were FeO and SiO₂; and CuO, PbO, and ZnO were contained in small quantities. Furthermore, fayalite, magnetite, augite, copper, and cuprite were found. High contents of FeO or SiO₂ components seem to have been added to form fayalite to remove gangue in the smelting process. The relatively low content of S detected in the copper prills suggests that roasting was performed well. Cristobalite and mullite, which are minerals that indicate high-temperature found in the furnace wall, show that the smelting temperature was higher than 1,250℃. The findings of this study show a high possibility that the Wanju Ungyo site is smelting remains of copper ores, which are nonferrous metals, rather than iron. Various smelting byproducts excavated in this area in the future will help us better understand the copper smelting process that may have been performed since ancient times.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.391.2-391.2
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• 2014

Solution-processible hybrid bipolar field effect transistors (HBFETs) with balanced hole and electron mobilities were fabricated using a combination of the organic p-type poly (3-hexylthiophene) (P3HT) layer and inorganic n-type ZnO material. The hole and electron mobilities were first optimized in single layer devices by using acetonitrile as a solvent additive to process the P3HT and annealing to process the ZnO layer. The highest hole mobility of the P3HT-only-devices with 5% acetonitrile was 0.15 cm2V-1s-1, while the largest electron mobility was observed in the ZnO-only-devices annealed at $200^{\circ}C$ and found to be $7.2{\times}10-2cm2V-1s-1$. The inorganic-organic HBFETs consisting of P3HT with 5% acetonitrile and ZnO layer annealed at $200^{\circ}C$ exhibited balanced hole and electron mobilities of $4.0{\times}10-2$ and $3.9{\times}10-2cm2V-1s-1$, respectively. The effect on surface morphology and crystallinity by adding acetonitrile and thermal annealing were investigated through X-ray diffraction and atomic force microscopy (AFM). Our findings indicate that techniques demonstrated herein are of great utility in improving the performance of inorganic-organic hybrid devices

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.200.2-200.2
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• 2013

Yttrium (Y)이 도핑 된 ZnO 나노 구조물을 수열합성법으로 제작하였다. 먼저 졸겔법으로 SiO2/Si 기판 위에 seed layer (Y-doped ZnO ; Y0.02Zn0.98O)를 제작하였으며 5번의 코팅을 진행하여 박막의 두께는 약 180 nm로 측정이 되었다. 그 후 진공 분위기에서 RTA를 이용하여 $500^{\circ}C$에서 3분간 열처리가 진행되었다. 이어서 수열합성법으로 mole 농도를 0.5~1.0 M 범위에서 변화시키며 YZO 시료를 제작하였다. X-ray diffraction (XRD)을 통해서 Y2O3 또는 결함과 관련된 피크는 관찰이 되지 않았으며, 모든 구조물에서 압축응력이 존재하는 알 수 있었으며, field emission scanning electron microscope (FESEM)에서 나노 구조물의 크기와 형태는 수열합성법의 mole 농도에 많은 영향을 받는 것으로 나타났다. Hall effect 측정을 통해서 모든 구조물은 n-type 전도 특성을 가지는 것으로 나타났다. 또한 광학적 특성인 photoluminescence (PL)에서는 수열합성법의 화학식을 고려할 때 Zn가 rich한 상태에서는 Zn interstitial로 존재하는 것으로 나타났고, mole 농도가 높아 질수록 free exciton에 의한 재결합인 UV emission이 우세하게 나타났다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.355-356
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• 2008

In this work, ZnO films doped with different contents of Indium (0.1at.%, 0.3at.%, 0.6at.%, respectively) were deposited on Si (111) substrate that has 1~20 $\Omega$cm by pulsed laser deposition (PLD) at $600^{\circ}C$ for 30min. The thickness of the films are about 250 nm. The structural, optical and electrical properties of the films were investigated using X-ray Diffraction (XRD), Atomic force microscope (AFM), Photoluminescence (PL) and Hall measurement. It has been found that RMS of the films is decreased and grain size is increased with increasing the contents of doped Indium. The results of the Photoluminescence properties were indicated that the films have UV emission about 380nm and shows a little red shitf with increasing contents of doped indium. The result of the Hall measurement shows that the concentration and resisitivity in doped ZnO are as changing as one order, respectively ${\sim}10^{18}/cm^2$, ${\sim}10^{-2}cm{\Omega}cm$.

• Journal of the Korean earth science society
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• v.25 no.6
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• pp.443-473
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• 2004

In northern Gohung granitic gneiss, porphyroblastic gneiss and migmatitic gneiss are widely distributed. Gneisses were plotted in granodiorite domain on an lUGS silica-alkali diagram. The amounts of trace elements (Li, Zn, Sc, Sr, Ni, V Y etc.) vs. $SiO_2$, somewhat decreased. Plagioclase showed a wide compositional range ($An_{32-48}$). $X_{alm}$ and $X_{sps}$ were higher in garnet rim and $X_{pyp}$ in garnet core. The rocks in the study area were formed from S and I-type magmas which generated from syn-collision and the late to post-orogenic tectonic environment. Metamorphic P-T conditions u·ere low to medium pressure, high temperature (803-913$^{\circ}C$, 6.1-7.3 kb) and overprinted by retrograde metamorphism (570-726$^{\circ}C$, 2.2-5.1 kb) and chloritization.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.301-301
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• 2012

Amorphous In-Ga-Zn-O (a-IGZO)는 광학적으로 투명하고 높은 전자이동도를 가지고 있어서 차세대 thin-film-transistor의 channel layer 물질로 각광받고 있다. 이러한 a-IGZO를 TFT channel layer로 사용하기 위해서는 소스 드레인 전극물질과 IGZO박막의 계면에서 ohmic contact을 만드는 것도 중요하다. 하지만 산화물 반도체의 특성상 금속물질을 증착시킬 때 산화금속계면을 형성하기 때문에 ohmic contact이 형성되기 어려운 것으로 알려져 있다. Au는 보통 전극물질로 많이 사용되는데, 이는 전기전도도가 매우 높고, 독특한 산화환원반응 특성을 보이지만, 화학반응을 잘 일으키지 않는 안정성을 가지는 성질에 기인한다. 본 연구진은 Au가 a-IGZO에 증착 시에 일어나는 표면의 화학적 상태변화를 이해하기 위해 방사광을 이용한 고분해능 광전자 분광법을 이용하여 표면변화를 분석하였다. Au는 (Au 4f) 증착 초기엔 약간의 gold oxide가 함께 형성되지만, 주로 metal gold의 형태로 존재하였다. In 3d, Ga 3d, O 1s, Zn 3d 각각의 스펙트럼에서는 Au 증착으로 인해 낮은 결합에너지에 새로운 state가 나타났다. 한편, In은 상대적으로 다른 원소들에 비해 Au와 좀 더 결합을 잘 하는 것으로 나타났는데 이는, In 5s 전자궤도가 전도메커니즘에서 중요한 역할을 하기 때문에, In-Au의 상대적인 강한 결합은 a-IGZO의 전기적 특성 변화에 기여할 수 있음을 의미한다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.11-11
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• 2008

ZnO has a very large exciton binding energy (60 meV) as well as thermal and chemical stability, which are expected to allow efficient excitonic emission, even at room temperature. ZnO based electronic devices have attracted increasing interest as the backplanes for applications in the next-generation displays, such as active-matrix liquid crystal displays (AMLCDs) and active-matrix organic light emitting diodes (AMOLEDs), and in solid state lighting systems as a substitution for GaN based light emitting diodes (LEDs). Most of these electronic devices employ the electrical behavior of n-type semiconducting active oxides due to the difficulty in obtaining a p-type film with long-term stability and high performance. p-type ZnO films can be produced by substituting group V elements (N, P, and As) for the O sites or group I elements (Li, Na, and K) for Zn sites. However, the achievement of p-type ZnO is a difficult task due to self-compensation induced from intrinsic donor defects, such as O vacancies (Vo) and Zn interstitials ($Zn_i$), or an unintentional extrinsic donor such as H. Phosphorus (P) doped ZnO thin films were grown on c-sapphire substrates by radio frequency magnetron sputtering with various Ar/ $O_2$ gas ratios. Control of the electrical types in the P-doped ZnO films was achieved by varying the gas ratio with out post-annealing. The P-doped ZnO films grown at a Ar/ $O_2$ ratio of 3/1 showed p-type conductivity with a hole concentration and hole mobility of $10^{-17}cm^{-3}$ and $2.5cm^2/V{\cdot}s$, respectively. X-ray diffraction showed that the ZnO (0002) peak shifted to lower angle due to the positioning of $p^{3-}$ ions with a smaller ionic radius in the $O^{2-}$ sites. This indicates that a p-type mechanism was due to the substitutional Po. The low-temperature photoluminescence of the p-type ZnO films showed p-type related neutral acceptor-bound exciton emission. The p-ZnO/n-Si heterojunction LEO showed typical rectification behavior, which confirmed the p-type characteristics of the ZnO films in the as-deposited status, despite the deep-level related electroluminescence emission.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.858-863
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• 1995

The nitrogenation process and magnetic properties of $Sm_{2}Fe_{17}N_{x}\;(0{\leq}x{\leq}3)$ were investigated. During the initial nitrogenation process, the nitrogen content had linear relation with the square root of nitrogenation time, and the activation energy for the process was calculated to be 102.4 kJ/mol. The magnetic properties of $Sm_{2}Fe_{17}N_{x}$ were strongly dependent on the nitrogen content and the composition having $Sm_{2}Fe_{17}N_{2.8}$ showed optimum magnetic properties with a Curie temperature of 450 oC. The intrinsic magnetic properties of the nitride at room temperature were $M_{s}=1147\;emu/cm^{3},\;K_{1}=4.6{\times}10^{7}erg/cm^{3},\;K_{2}=6.0{\times}10^{7}erg/cm^{3}\;and\;H_{A}=290\;kOe$, respectively.

• Korean Journal of Crystallography
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• v.13 no.1
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• pp.17-20
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• 2002

The complex [Zn(L)₂(H₂O)₄] (1) (L = isonicotinate) has been prepared and characterized by X-ray crystallography. Compound 1 crystallizes in the triclinic space group P1, with a = 6.9062(4) , b = 9.2618(7) , c = 6.3313(3) , α = 104.986(6)°, β = 112.865(4)°, γ = 96.213(6)°, V = 350.41(4) , Z = 1, R₁(wR₂) for 1225 observed reflections of [I > 2σ(I)] was 0.0209 (0.0591). The coordination environment of the zinc atom can be described as an octahedron in which the isonicotinato ligands are mutually trans. Compound 1 is also connected into a two-dimensional chain via hydrogen-bonds.