• Journal of the Korean Ceramic Society
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• v.38 no.3
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• pp.287-292
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• 2001

본 실험은 목적은 CRT(Cathode Ray Tube)용 청색 형광체인 ZnS:Ag 분말 표면에 액상법으로 SnO$_2$를 균일하게 코팅하는 공정조건을 연구하는 것이다. 용매로서 물을 사용하고, Sn의 공급물질로서 SnCl$_4$.4$H_2O$, 침전 촉매로서 CO(NH$_2$)$_2$를 각각 사용하여, 균일 침전 방법으로 ZnS:Ag 분말표면에 SnO$_2$를 코팅할 수 있었다. 초기에 첨가되는 SnCl$_4$.4$H_2O$의 량이 Sn/Zn의 몰비기준으로 0.017인 경우에 ZnS:Ag 분말표면에 Sn(OH)$_4$가 균일하게 코팅되지만, 그 이상 첨가되면 과량의 Sn(OH)$_4$가 입자들 사이에 응집되었다. 코팅된 Sn(OH)$_4$는 비정질 구조로 규명되었으며, 이를 SnO$_2$결정상으로 전이시키기 위하여 300~$700^{\circ}C$ 범위 내에서 열처리를 행하였다. 비정질 Sn(OH)$_4$는 20$0^{\circ}C$이하에서 탈수되었고 45$0^{\circ}C$부터 SnO$_2$로 결정화되기 시작하였다. 순수한 ZnS의 경우, 50$0^{\circ}C$이하에서는 상변화가 없으나, $600^{\circ}C$에서 일부 산화되었으며 $700^{\circ}C$에서는 완전히 ZnO로 산화되므로, ZnS의 산화방지 및 SnO$_2$의 결정화를 동시에 만족하는 최고 열처리온도는 50$0^{\circ}C$로 규명되었다. 그러나 ZnS에 SnO$_2$가 코팅된 시편의 경우에는 $600^{\circ}C$가 되어도 ZnS 상이 거의 산화되지 않았고, $700^{\circ}C$에서도 ZnS와 ZnO 상이 공존한 것으로 보아 SnO$_2$코팅이 ZnS의 산화를 억제하는 것으로 나타났다.

• Journal of Korea Foundry Society
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• v.28 no.4
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• pp.184-189
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• 2008

Ag-Cd alloy has been widely used as an electrical contact material, since Ag-Cd alloy has a good wear resistance and stable contact resistance. But nowadays Ag-Cd alloy is not considered as electrical contact material any more due to detrimental effect on environments. Currently, active researches are being performed on ($Ag-SnO_2$ and $Ag-SnO_{2}-In_{2}O_{3}$) as an alternative solution which can fix the remaining environmental problems. However, $In_{2}O_{3}$ is relatively expensive and Ag-Sn alloy has low wear resistance. Our recent research results show that Ag-X%Zn-Y%Sn has similar physical and chemical properties. In the present study, so we tried to change and to optimize the Zn oxide content to over 6 wt% and Sn oxide content with 0.5, 1.0, 1.5 wt%. Results obtained from the experiments on the Ag-X%ZnO-Y%$SnO_2$ are discussed.

• Korean Journal of Metals and Materials
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• v.46 no.7
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• pp.443-448
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• 2008

Contact materials are used in many electrical devices. Ag-Cd alloy has been widely used in electrical part, because Ag-Cd alloy has a good wear resistance and stable contact resistance. But nowadays Ag-Cd alloy isn't being used because of environmental challenges. Currently new research is being done on ($Ag-SnO_2$ and $Ag-SnO_2-In_2O_3$) as an alternative solution to fix any remainly environmental challenges. However $In_2O_3$ is more expensive and Ag-Sn alloy has low wear resistance. According to our research data Zn has a similar physical and chemical property. In this work, so we changed and optimized the Zn oxide to over 4 and added Sn oxide ratio 0.5, 1.0, 1.5wt%. Conclusions from the data recorded from the experiment of $Ag-ZnO-SnO_2$ are as follows.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.1 s.34
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• pp.35-40
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• 2005

The oxidation of pure Sn and Sn-0.7Cu, Sn-3.5Ag, Sn-lZn, and Sn-9Zn alloys at $150^{\circ}C$ was investigated. Both the chemical nature and the amount of oxides were characterized using electrochemical reduction analysis by measuring the electrolytic reduction potential and total transferred electrical charges. X-ray photoelectron spectroscopy (XPS) was also conducted to support the results of reduction analysis. The effect of Cu, Ag and Zn addition on surface oxidation of Sn alloys is reported. For Sn, Sn-0.7Cu and Sn-3.5Ag, SnO grew first and then the mixture of SnO and $SnO_2$ was found. $SnO_2$ grew predominantly for a long-time aging. For Zn containing Sn alloys, both ZnO and $SnO_2$ were formed. Zn promotes the formation of $SnO_2$. Sn oxide growth rate of Pb-free solder alloys was also discussed in terms of alloying elements.

• Journal of the Korean institute of surface engineering
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• v.52 no.3
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• pp.145-149
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• 2019

Transparent and conductive ZnO/Ag/SnO2 (ZAS) tri-layer films were deposited onto glass substrates at room temperature by using radio frequency (RF) and direct current (DC) magnetron sputtering. The thickness values of the ZnO and $SnO_2$ thin films were kept constant at 50 nm and the value for Ag interlayer was varied as 5, 10, 15, and 20 nm. In the XRD pattern the diffraction peaks were identified as the (002) and (103) planes of ZnO, while the (111), (200), (220), and (311) planes could be attributed to the Ag interlayer. The optical transmittance and electrical resistivity were dependent on the thickness of the Ag interlayer. The ZAS films with a 10 nm thick Ag interlayer exhibited a higher figure of merit than the other ZAS films prepared in this study. From the observed results, a ZAS film with a 10 nm thick Ag interlayer was believed to be an alternative transparent electrode candidate for various opto-electrical devices.

• Korean Journal of Materials Research
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• v.11 no.7
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• pp.603-608
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• 2001

$MO-SiO_2$ (M = Zn, Sn, In, Ag, Ni) binary silica gels were synthesized by sol-gel method and their structural change with the kind of metal ions was characterized by XRD, FT- IR and $^{29}$Si-NMR. Although X-ray analysis showed partial recrystallization of $AgNO_3$ in $Ag-SiO_2$gel, crystalline phase formed by the bonding between metal ion and the silica matrix didn't appear in all $MO-SiO_2$ gels. The FT-IR analysis showed that Zn, Sn and in partially formed Si-O-M bonding in silica matrix and made an shift of absorption peak to by Si-O-Si symmetrical vibration. In addition, $^{29}Si-NMR$ studies showed that Zn, Sn and In didn't affect sol-gel process of silica and were linked with non-bridging oxygen of the linear silica structure, which formed imperfect network because of low temperature sol-gel process. Ag and Ni make a role of catalysis on sol-gel process, resulting in densifying the silica network structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1989.06a
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• pp.52-55
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• 1989

The properties of sintered Ag-SnO$_2$contacts which contain the second oxide were investigated with hardeness, workability, electrical conductivity and are erosion. Ag-SnO$_2$contacts containing ZnO or Bi$_2$O$_3$have most excellent workability and arc erosion endurance.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.110.2-110.2
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• 2012

We reported on antireflective ZnSnO (ZTO)/Ag bilayer and ZTO/Ag/ZTO trilayer source/drain (S/D) electrodes for all-transparent ZTO channel based thin film transistors (TFTs). The ZTO/Ag bilayer is more transparent (83.71%) and effective source/drain (S/D) electrodes for the ZTO channel/Al2O3 gate dielectric/ITO gate electrode/glass structure than ZTO/Ag/ZTO trilayer because the bottom ZTO layer in the trilayer increasea contact resistance between S/D electrodes and ZTO channel layer and reduce the antireflection effect. The ZTO based all-transparent TFTs with ZTO/Ag bilayer S/D electrode showed a saturation mobility of 4.54cm2/Vs and switching property (1.31V/decade) comparable to TTFT with Ag S/D electrodes.

• Journal of the Korean Society for Marine Environment & Energy
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• v.12 no.4
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• pp.302-306
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• 2009

9 kinds of nanoparticle used for this study was a particle with the size of less than 100 nm of diameter, and Artemia sp. cyst examined what kind of influence to have upon the process hatched out in nauplius. 82% hatched in nauplius at the opposition ward where a nanoparticle wasn't added after 24 time course. AGZ020, Nano silver, P-25, Sb and SnO nanoparticle showed hatching rate of 18%, 20%, 13%, 50% and 0% respectively by the 20mg/L density, and it became clear that a harmful effect is big, but I had a harmful effect compared with the opposition ward by 75%, 60%, 73% and 73% respectively by Ag-$TiO_2$, In, Sn and Zn nanoparticle, but a feeble thing was known relatively compared with AGZ020, Nano silver, P-25, Sb and SnO nanoparticle. The difference has caused this with the ingredient a nanoparticle has. Ag is included 2 % and AGZ020, Nano silver and P-25 nanoparticle are used widely as anti-fungus agent, and the SnO nanoparticle which became combination is a light catalyst pill, and oxygen is used for a Sn particle. This and others, a possibility that use is generalized and flows into aquatic environment in sequence the home electronics, functionality cosmetics, anti-fungus agent and a light catalyst pill at present becomes high for nanoparticles and others. The anxiety which has an influence on the ecology world in the water with this can be generated, so I'd have to study the potential danger a nanoparticle has continuously.

• Proceedings of KOSOMES biannual meeting
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• 2008.05a
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• pp.137-141
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• 2008

9 kinds of nanoparticle used for this study was a particle with the size of less than 100 nm of diameter, and Artemia sp. cyst examined what kind a influence to have upon the process hatched out in nauplius. 82% hatched in nauplius at the opposition ward where a nanoparticle wasn't added after 24 time course. AGZ020, Nano silver, P-25, Sb and SnO nanoparticle showed hatching rate of 18%, 20%, 13%, 50% and 0% respectively by the 20mg/L density, and it became clear that a harmful effect is big, but I had a harmful effect compared with the opposition ward by 75%, 60%, 73% and 73% respectively by Ag-$TiO_2$, In, Sn and Zn nanoparticle, but a feeble thing was known relatively compared with AGZ020, Nano silver, P-25, Sb and SnO nanoparticle. The difference was mused this with the ingredient a nanoparticle has. Ag is included 2% and AGZ020, Nano silver and P-25 nanoparticle are used widely as anti-fungus agent, and the SnO nanoparticle which became combination is a light catalyst pill, and oxygen is used for a Sn particle. This and others, a possibility that use is generalized and flows into aquatic environment in sequence the home electronics, functionality cosmetics, anti-fungus agent and a light catalyst pill at present becomes high for nanoparticles and others. The anxiety which has an influence on the ecology world in the water with this can be generated, so I'd have to study the potential danger a nanoparticle has continuously.