• Korean Journal of Materials Research
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• v.21 no.6
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• pp.295-298
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• 2011

ZnS:Mn, Dy yellow phosphors for White Light Emitting Diode were synthesized by a solid state reaction method using ZnS, $MnSO_4{\cdot}5H_2O$, S and $DyCl_3{\cdot}6H_2O$ powders as starting materials. The mixed powder was sintered at $1000^{\circ}C$ for 4 h in an air atmosphere. The photoluminescence of the ZnS:Mn, Dy phosphors showed spectra extending from 480 to 700 nm, peaking at 580 nm. The photoluminescence of 580 nm in the ZnS:Mn, Dy phosphors was associated with $^4T_1{\rightarrow}^6A_1$ transition of $Mn^{2+}$ ions. The highest photoluminescence intensity of the ZnS:Mn, Dy phosphors under 450 nm excitation was observed at 4 mol% Dy doping. The enhanced photoluminescence intensity of the ZnS:Mn, Dy phosphors was explained by energy transfer from $Dy^{3+}$ to $Mn^{2+}$. The CIE coordinate of the 4 mol% Dy doped ZnS:Mn, Dy was X = 0.5221, Y = 0.4763. The optimum mixing conditions for White Light Emitting Diode was obtained at the ratio of epoxy : yellow phosphor = 1:2 form CIE coordinate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.552-556
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• 2002

The microstructure and electrical characteristics of A~C's ZnO varistors fabricated according to variable sintering condition, which sintering temperature is $1130^{\circ}C$ and speeds of pusher are A: 2mm/min, B: 4mm/min, C: 6mm/min, respectively, were investigated. In the microstructure, A~C's ZnO varist-ors fabricated variable sintering condition was consisted of ZnO grain(ZnO), spinel phase$(Zn_{2.33}Sb_{0.67}O_4)$ Bi-rich $phase(Bi_{2}O_{3})$, wholly. Varistor voltage of A~C's ZnO varistors sintered at $1130^{\circ}C$ increased in order A < B < C's ZnO varistors. C's ZnO varistor exhibited good characteristics that nonlinear exponent is 31.70. Leakage current of A~C's ZnO varistors exhibited below 2mA at rated voltage. Lightning impulse residual voltage of A's ZnO varistor suited standard characteristics, which is 3.85kV at 2.5kA, 4.4kV at 5kA and 5.16kV at 10kA. After multi lightning impulse residual voltage test of A's ZnO varistor exhibited good discharge characteristics which ZnO varistor reveals no evidence of puncture, flashover, cracking in visual examination. After high current impulse test of A's ZnO varistor exhibited good discharge characteristics, which variation rate of residual voltage is 0.4% before and after test, and revealed no evidence.

• Elastomers and Composites
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• v.53 no.2
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• pp.75-79
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• 2018

ZnS:Mn-glycine (ZnS:Mn-Gly) nanocomposites were synthesized by capping ZnS:Mn nanocomposites with glycine. Zinc sulfate heptahydrate ($ZnSO_4{\cdot}7H_2O$), glycine ($C_2H_5NO_2$), manganese sulfate monohydrate ($MnSO_4{\cdot}H_2O$), and sodium sulfide ($Na_2S$) were used as the source reagents. $ZnS:Mn-Gly-C_{60}$ nanocomposites were obtained by heating the ZnS:Mn-Gly nanocomposites and fullerene ($C_{60}$) at a 2:1 mass ratio in an electric furnace at $700^{\circ}C$ for 2 h. X-ray diffraction (XRD) was used to characterize the crystal structure of the synthesized nanocomposites. The photocatalytic activity of the $ZnS:Mn-Gly-C_{60}$ nanocomposites was evaluated, via the degradation of brilliant green (BG) dye under 254 nm irradiation, with a UV-vis spectrophotometer.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.4
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• pp.613-619
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• 1994

Dielectric properties of Ba(ZnS11/3TTaS12/3T)OS13T+x ZnO(x=0, 0.4, 0.8, 1.0 wt%) ceramics have been investigated at microwave frequencies. With excess ZnO, the sinterability was improved and the dielectric constant($\varepsilon$S1rT) and the unloaded quality factor(QS1UT) were increased. The structure changed into hexagonal from pseudocubic as being annealed at 140$0^{\circ}C$ in excess ZnO composition. Also, the temperature coefficient of the resonant frequency ($\tau$S1fT) turned into (-)ppm/$^{\circ}C$ when sintered at 155$0^{\circ}C$ for 2 hours. But the specimen sintered in ZnO muffling showed increased density and $\varepsilon$S1rT but lowerde QS1uT. Among the specimen investigated, expecially the composition added with 0.4wt% excess ZnO showed the most optimum dielectric values ($\varepsilon$S1rT=28, QS1uT x f=120000GHz) better than those of original Ba(ZnS11/2T TaS12/3T)OS13T ceramics.

• Advances in materials Research
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• v.13 no.1
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• pp.55-62
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• 2024

Cu-based sulfides have recently emerged as promising thermoelectric (TE) materials due to their low cost, non-toxicity, and abundance. In this research, point defect structure of Cu_2-xZnSnS₄ (x=0.1, 0.2, 0.3) samples were synthesized by the mechanical alloying method. Mixed powders of Cu, Zn, Sn and S were milled using high energy ball milling at a rotation speed of 300 rpm in Ar atmosphere. The milled Cu_2-xZnSnS₄ powders were heat-treated at 723 K for 24 h, and subsequently consolidated using spark plasma sintering (SPS) under an applied pressure of 60 MPa for 15 min. The thermal conductivity of the sintered Cu_2-xZnSnS₄ samples was evaluated. A well-defined Cu_2-xZnSnS₄ powders were successfully formed after milling for 16 h, with the particle sizes mostly distributed in the range of 60-100 nm. The lattice constants of aand cdecreased with increasing composition value x. The thermal conductivity of sintered x=0.1 sample exhibited the lowest value and attained 0.93 W/m K at 673 K.

• Rapid Communication in Photoscience
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• v.4 no.2
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• pp.45-47
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• 2015

We have successfully synthesized $AgInS_2$ core and $AgInS_2$/ZnS core/shell nanoparticles by the sonochemical method. The ultrasonic based $AgInS_2$ and $AgInS_2$/ZnS nanoparticle synthesis can be utilized as a simple and rapid method. The $AgInS_2$/ZnS nanoparticles show the higher fluorescence intensity and quantum yield than $AgInS_2$ nanoparticles. Fluorescence wavelength of $AgInS_2$/ZnS shows blue shift from 635 nm to 610 nm against $AgInS_2$ because of reducing the defect sites and increasing spatial confinements. For the fluorescence lifetime, $AgInS_2$/ZnS (124.8 ns) has longer lifetime than $AgInS_2$ (54.8 ns).

• Journal of Sensor Science and Technology
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• v.28 no.4
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• pp.256-261
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• 2019

In this study, mid-infrared transparent zinc sulfide (ZnS) ceramics were fabricated through hydrothermal synthesis with different molar ratios of S/Zn (S/Zn = 0.8, 1.0, 1.2, 1.4, and 1.6). The ZnS ceramics were sintered at a relatively low temperature of $850^{\circ}C$ to prevent the occurrence of the hexagonal phase featuring optical anisotropy. The phase composition, microstructure, and optical properties of the ZnS ceramics were subsequently investigated by employing X-ray diffraction, scanning electron microscopy, and Fouriertransform infrared spectroscopy. The results obtained indicate that the ZnS nanoparticles feature the cubic phase, without the hexagonal phase. Moreover, with increasing S, the crystallinity and particle size of the ZnS nanoparticles increased. The crystallinity and density of the ZnS ceramics improved when the molar ratio of S was higher than the molar ratio of Zn, thereby enhancing the transmittance. Furthermore, the ZnS ceramic with an S/Zn value of 1.2 was found to exhibit the highest transmittance of approximately 69% owing to the reduced occurrence of the hexagonal phase and a high density of 99.8%.

• Korean Journal of Materials Research
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• v.18 no.6
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• pp.339-346
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• 2008

Single-crystal $ZnIn_2S_4$ layers were grown on a thoroughly etched semi-insulating GaAs (100) substrate at $450^{\circ}C$ with a hot wall epitaxy (HWE) system by evaporating a $ZnIn_2S_4$ source at $610^{\circ}C$. The crystalline structures of the single-crystal thin films were investigated via the photoluminescence (PL) and Double-crystal X-ray rocking curve (DCRC). The temperature dependence of the energy band gap of the $ZnIn_2S_4$ obtained from the absorption spectra was well described by Varshni's relationship, $E_g(T)=2.9514\;eV-(7.24{\times}10^{-4}\;eV/K)T2/(T＋489K)$. After the as-grown $ZnIn_2S_4$ single-crystal thin films was annealed in Zn-, S-, and In-atmospheres, the origin-of-point defects of the $ZnIn_2S_4$ single-crystal thin films were investigated via the photoluminescence (PL) at 10 K. The native defects of $V_{Zn}$, $V_S$, $Zn_{int}$, and $S_{int}$ obtained from the PL measurements were classified as donor or acceptor types. Additionally, it was concluded that a heat treatment in an S-atmosphere converted $ZnIn_2S_4$ single crystal thin films into optical p-type films. Moreover, it was confirmed that In in $ZnIn_2S_4$/GaAs did not form a native defects, as In in $ZnIn_2S_4$ single-crystal thin films existed in the form of stable bonds.

• Journal of Sensor Science and Technology
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• v.17 no.6
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• pp.437-446
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• 2008

Single crystalline ${ZnIn_2}{Se_4}$ layers were grown on thoroughly etched semi-insulating GaAs (100) substrate at $400^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating ${ZnIn_2}{Se_4}$ source at $630^{\circ}C$. The crystalline structure of the single crystalline thick films was investigated by the photoluminescence (PL) and Double crystalline X-ray rocking curve (DCRC). The carrier density and mobility of ${ZnIn_2}{Se_4}$ single crystalline thick films measured from Hall effect by van der Pauw method are $9.41{\times}10^{16}cm^{-3}$ and $292cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ${ZnIn_2}{Se_4}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)$=1.8622 eV-$(5.23{\times}10^{-4}eV/K)T^2$/(T+775.5 K). After the as-grown ${ZnIn_2}{Se_4}$ single crystalline thick films was annealed in Zn-, Se-, and In-atmospheres, the origin of point defects of ${ZnIn_2}{Se_4}$ single crystalline thick films has been investigated by the photoluminescence (PL) at 10 K. The native defects of $V_{Zn}$, $V_{Se}$, $Zn_{int}$, and $Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Se-atmosphere converted ${ZnIn_2}{Se_4}$ single crystalline thick films to an optical p-type. Also, we confirmed that In in ${ZnIn_2}{Se_4}$/GaAs did not form the native defects because In in ${ZnIn_2}{Se_4}$ single crystalline thick films existed in the form of stable bonds.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.2
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• pp.70-76
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• 2014

$Zn_2TiO_4$, using an anatase form of $TiO_2$ on zinc crystalline glaze, was shown as effective nuclear agent. Thus the effects on glaze were studied with synthesized $Zn_2TiO_4$ at low temperature. First, the chromophore elements were employed in synthesized $Zn_2TiO_4$ then add them in the zinc crystalline glaze. Crystal creation and development of color by $Zn_2TiO_4$ addition on the zinc crystalline glaze were more effective. Addition of $Zn_2TiO_4$, which is developed in low range temperature, is effected as zinc crystalline nuclear in the willemite glaze. When 5 wt% of synthesized $Zn_2TiO_4$ was added to the willemite glaze, nuclear creation increases and steadily retains. Therefore addition of respectively doped $Zn_2TiO_4$ with CoO, NiO, and CuO would increase doped effects in the glaze, various color willemite crystal were obtained.