• Clean Technology
• /
• v.29 no.1
• /
• pp.46-52
• /
• 2023

Oxalic acid has been traditionally obtained via the oxidation of carbohydrates using nitric acid and catalysts. However, this process produces a variety of nitrogen oxides during oxidation and requires a separation process due to its various intermediates. These products and additional steps increase the harmfulness and complexity of the process. Recently, the electrochemical reduction of carbon dioxide into oxalic acid has been suggested as an environmentally friendly and efficient technology for the production of oxalic acid. In this electrochemical conversion system, zinc oxalate (ZnC₂O₄) is obtained by the reaction of Zn²⁺ ions produced by Zn oxidation and oxalate ions produced by CO₂ reduction. ZnC₂O₄ can then be converted to form oxalic acid, but this requires the use of a strong acid and heat. In this study, a system was proposed that can easily convert ZnC₂O₄ to oxalic acid without the use of a strong acid while also allowing for easy separation. In addition, this proposed system can also further convert the products into glycolic acid which is a high-value-added chemical. ZnC₂O₄ was effectively separated into Zn(OH)₂ powder and oxalate solution through a chemical treatment and a vacuum filtration process. Then the Zn(OH)₂ and oxalate were electrochemically converted to zinc and glycolic acid, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.392-393
• /
• 2007

PDP용 녹색 $Zn_2SiO_4$:Mn 형광체의 발광특성과 결정성을 향상시키기 위해 co-dopant로 Mg를 첨가한 $(Zn_{1-x}Mg_x)_2SiO_4$:Mn 형광체를 합성하였다. 합성된 형광체의 발광특성을 PL로 조사한 결과, $Zn_2SiO_4$:Mn 형광체는 Mg의 농도에 관계없이 530nm에서 녹색 발광을 하였고, Mg의 농도가 0.5 mol%일 때 가장 높은 발광세기가 나타났다. 이것은 Zn과 이온반경이 비슷한 Mg가 치환되어 모체에서의 Mn으로의 에너지 전이가 증가하여 발광세기가 증가한 것으로 생각된다.

• Journal of the Korean Chemical Society
• /
• v.63 no.6
• /
• pp.453-458
• /
• 2019

Synthesis of ZnCo₂O₃ oxide is performed by sol-gel method via nitrate-citrate route. Powder X-ray diffraction (XRD) study shows monoclinic unit cell having lattice parameters: a = 5.721(1) Å, b = 8.073(2) Å, c = 5.670(1) Å, β = 93.221(8)°, space group P_2/m and Z = 4. Average crystallite sizes determined by Scherrer equation are the range ~14-32 nm, whereas SEM micrographs show nano-micro meter size particles formed in ZnCo₂O₃. Endothermic peak at ~798 K in the Differential scanning calorimetric (DSC) trace without weight loss could be due to structural transformation and the endothermic peak ~1143 K with weight loss is due to reversible loss of O₂ in air atmosphere. Energy Dispersive X-ray (EDX) analysis profile shows the presence of elements Zn, Co and O which indicates the purity of the sample. Magnetic measurements in the range of +12 kOe to -12 kOe at 10 K, 77 K, 120 K and at 300 K by PPMS-II Physical Property Measurement System (PPMS) shows hysteresis loops having very low values of the coercivity and retentivity which indicates the weakly ferromagnetic nature of the oxide. Observed X-band EPR isotropic lineshapes at 300 K and 77 K show positive g-shift at g_iso ~2.230 and g_iso ~2.217, respectively which is in agreement with the presence of paramagnetic site Co²⁺(3d⁷) in the oxide. DC conductivity value of 2.875 ×10^-8 S/cm indicates very weakly semiconducting nature of ZnCo₂O₃ at 300 K. DRS absorption bands ~357 nm, ~572 nm, ~619 nm and ~654 nm are due to the d-d transitions ⁴T_1g(⁴F)→²E_g(²G), ⁴T_1g(⁴F)→⁴T_1g(⁴P), ⁴T_1g(⁴F)→⁴A_2g(⁴F), ⁴T_1g(⁴F)→⁴T_2g(⁴F), respectively in octahedral ligand field around Co²⁺ ions. Direct band gap energy, E_g~ 1.5 eV in the oxide is obtained by extrapolating the linear part of the Tauc plot to the energy axis indicates fairly strong semiconducting nature of ZnCo₂O₃.

• Journal of Magnetics
• /
• v.18 no.4
• /
• pp.428-431
• /
• 2013

We demonstrate that a partial loading of $Ni_{0.5}Zn_{0.5}Fe_2O_4$ (Ni-Zn ferrite) film remarkably improves impedance matching of electrically small $Ba_3Co_2Fe_{24}O_{41}$ ($Co_2Z$) hexaferrite antenna. A 3 ${\mu}m$ thick Ni-Zn ferrite film was deposited on a silicon wafer by the electrophoresis deposition process and post-annealed at $400^{\circ}C$. The fabricated Ni-Zn ferrite film has saturation magnetization of $268emu/cm^3$ and coercivity of 89 Oe. A partial loading of the Ni-Zn ferrite film on the $Co_2Z$ hexaferrite helical antenna increases antenna return loss to 24.7 dB from 9.0 dB of the $Co_2Z$ antenna. Experimental results show that impedance matching and maximum input power transmission to the antenna without additional matching elements can be realized, while keeping almost the same size as the $Co_2Z$ antenna size.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.209-209
• /
• 2009

Fabrication of p-type ZnO has already proven difficult and usually inconsistent despite numerous worldwide efforts. Many research groups studied electrical and optical properties P, Li, As, N single doped ZnO thin film. In P-doped ZnO thin film, the reproducibility of p-type conduction with $P_2O_5$ as a dopant source was shown to be relatively poor. In this study, we made P single doped and Li & P co-doped ZnO target. To investigate electrical and optical properties of P single doped and Li & P co-doped ZnO thin film using $P_2O_5$ and $Li_3PO_4$ dopant source respectively was deposited by PLD. The growth temperature was changed 500, $700^{\circ}C$ and various oxygen partial pressure and post-annealing conditions was changed temperature, different gas ambient($O_2,N_2$). We investigate that how to change electrical and optical properties as function of growth temperature, oxygen partial pressure and post-annealing(RTA).

• Journal of the Microelectronics and Packaging Society
• /
• v.15 no.1
• /
• pp.1-6
• /
• 2008

Thermoelectric properties of calcium cobalt layer structure oxide system, $Ca_3Co_2O_6$ and $Ca_3Co_4O_9$ were investigated at the temperature range of 300 to 1000K for the application of thermoelectric generation. In the composition, the Ca site was partially substituted with Bi, Sr, La, K and the Co site was partially substituted with Mn, Fe, Ni, Cu, Zn. The thermoelectric properties of Bi substituted $Ca_3Co_4O_9$. $Ca_{2.7}Bi_{0.3}Co_4O_9$ for electrical conductivity, Seebeck coefficient and power factor were $85.4({\Omega}$cm)^{-l}, $176.2{\mu}V/K$ and $265.2{\mu}W/K^m$, respectively. The unit thermoelectric couple was fabricated with the p-type of $Ca_{2.7}Bi_{0.3}Co_4O_9$ and n-type ($Zn_{0.98}Al_{0.02}$)O thermoelectrics whose figure-of-merit(Z) were $0.87{\times}10^{-4}/K$ and $0.41{\times}10^4/K$, respectively. The generated thermoelectric power was about 30mV at the temperature difference of 120K in the unit thermoelectric couple.

• Journal of the Korean Ceramic Society
• /
• v.38 no.3
• /
• pp.287-292
• /
• 2001

본 실험은 목적은 CRT(Cathode Ray Tube)용 청색 형광체인 ZnS:Ag 분말 표면에 액상법으로 SnO$_2$를 균일하게 코팅하는 공정조건을 연구하는 것이다. 용매로서 물을 사용하고, Sn의 공급물질로서 SnCl$_4$.4$H_2O$, 침전 촉매로서 CO(NH$_2$)$_2$를 각각 사용하여, 균일 침전 방법으로 ZnS:Ag 분말표면에 SnO$_2$를 코팅할 수 있었다. 초기에 첨가되는 SnCl$_4$.4$H_2O$의 량이 Sn/Zn의 몰비기준으로 0.017인 경우에 ZnS:Ag 분말표면에 Sn(OH)$_4$가 균일하게 코팅되지만, 그 이상 첨가되면 과량의 Sn(OH)$_4$가 입자들 사이에 응집되었다. 코팅된 Sn(OH)$_4$는 비정질 구조로 규명되었으며, 이를 SnO$_2$결정상으로 전이시키기 위하여 300~$700^{\circ}C$ 범위 내에서 열처리를 행하였다. 비정질 Sn(OH)$_4$는 20$0^{\circ}C$이하에서 탈수되었고 45$0^{\circ}C$부터 SnO$_2$로 결정화되기 시작하였다. 순수한 ZnS의 경우, 50$0^{\circ}C$이하에서는 상변화가 없으나, $600^{\circ}C$에서 일부 산화되었으며 $700^{\circ}C$에서는 완전히 ZnO로 산화되므로, ZnS의 산화방지 및 SnO$_2$의 결정화를 동시에 만족하는 최고 열처리온도는 50$0^{\circ}C$로 규명되었다. 그러나 ZnS에 SnO$_2$가 코팅된 시편의 경우에는 $600^{\circ}C$가 되어도 ZnS 상이 거의 산화되지 않았고, $700^{\circ}C$에서도 ZnS와 ZnO 상이 공존한 것으로 보아 SnO$_2$코팅이 ZnS의 산화를 억제하는 것으로 나타났다.

• Korean Journal of Crystallography
• /
• v.13 no.2
• /
• pp.63-68
• /
• 2002

Zn/sub 2-x/Mn/sub x/SiO/sub 4/ phosphors for PDP were synthesized by solid state reaction method. The effects of firing temperature, ratio of hydrogen gas to nitrogen for heat treatment and concentration of activator and co-dopants on the luminous properties have been investigated. It was found that the phosphor fabricated at 1400℃ with x = 0.002 Mn concentration had a maximum brightness. Luminous properties of a phosphor were improved when Cr/sup 3＋/ was added as a co-dopant rather than other co-dopants.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.60 no.12
• /
• pp.2270-2275
• /
• 2011

The sintering behavior and microwave properties of ferrite ($Ba_3Co_{2-2x}Zn_{2x}Fe_{24}O_{41}$ ceramics) were investigated for microwave applications. Also PIFA type antenna with ferrite was simulated. All samples were prepared by the solid state reaction method and sintered at $1350^{\circ}C$. All ceramics had relatively density above of 92% compare with theoretical density of $Ba_3Co_2Fe_{24}O_{41}$ ceramics. From the XRD pattens, the Z-type phase was existed as main phase in $Ba_3Co_{2-2x}Zn_{2x}Fe_{24}O_{41}$ ceramics. The permittivity and permeability of $Ba_3Co_{2-2x}Zn_{2x}Fe_{24}O_{41}$ ceramics were increased with Zn additions and decreased rapidly over frequency of 200~600 MHz. Several PIFA type antennas with ferrite and FR4 were simulated. All antenna structure had return loss of less than -10 dB at each resonant frequency. Simulated antenna using both ferrite and FR4 showed size reduction of 25% without a significant decrement of efficiency.

• 한국신재생에너지학회:학술대회논문집
• /
• 2009.11a
• /
• pp.359-359
• /
• 2009

투명전도 산화막 재료로 널리 사용되고 있는 ITO는 전기적 및 광학적 특성이 우수한 장점이 있으나, ITO의 주 재료인 인듐은 매장량이 적어서 가격이 고가인 단점이 있어 대체 재료의 개발이 시급한 상황이다. ITO 대체 TCO로 가장 유력한 후보인 Al doped ZnO(AZO)는 가시광을 투과하는 성질을 가지고 있고, 저온 공정이 가능하다는 장점뿐만 아니라 수소 분위기의 안정성 및 가격이 싸다는 장점이 있다. 본 연구에서는 양이온 금속원소(Al)과 음이온 할로겐 원소(F) 및 수소(H)를 co-doping한 ZnO 박막을 rf 마그네트론 스퍼터를 이용하여 증착한 뒤 도핑량과 진공중에서의 열처리에 따른 전기적 및 광학적 특성에 대해 고찰하였다. Al과 H를 co-doping한 ZnO의 박막의 경우 Al의 농도가 낮은 TCO박막이 전기적 특서에서 더 큰 향상을 보였으며, 동일한 F 함량에서는 H 함량이 늘어날수록 캐리어의 증가해 TCO박막의 전기적 특성이 향상되는 것으로 나타났다. 그러나 진공중의 열처리에 따른 F와 H의 거동은 반대로 나타났다. 이 연구를 통해서 $36.2cm^2$/Vs의 높은 홀 이동도와 $2.9{\times}10^{-4}{\Omega}cm$의 낮은 비저항을 가지는 ZnO계 박막의 제조가 가능하였다.