• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.122-125
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• 1995

Using metalorganic deposition technique, $La_2Ti_2O_{7}$ precursor solution was deposited on platinium coated SiO$_2$/SI(100) substrates by spin-coating process. Crystalline and crack-free films of ∼0.2$\mu\textrm{m}$ thickness were successfully fabricated on the above substrate from four different types of $La_2Ti_2O_{7}$ precursor solutions by proper heat treatment in the temperature range of $700^{\circ}C$∼$1200^{\circ}C$. Microstructure and X-ray diffraction analysis of $La_2Ti_2O_{7}$ thin film showed that the crystallization temperature and the preferred orientation of $La_2Ti_2O_{7}$ thin film were strongly dependent on the precursor used.

• Journal of the Korean Chemical Society
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• v.37 no.8
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• pp.765-772
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• 1993

Two-dimensional potassium tetratitanate ($K_2Ti_4O_9$) and three-dimensional potassium hexatitanate ($K_2Ti_6O_{13}$) fibers have been prepared by the combined method consisting of the flux melting (1150$^{\circ}C$)-slow cooling (cooling rate = 5$^{\circ}C$/h) process from the starting raw materials of $K_2CO_3$, and $TiO_2$ with the flux of $K_2MoO_4$. It was found that the fiber growth reaction is strongly dependent upon the mole ratio of flux (F) to raw material (R), which is 7 : 3 (F : R) as for the optimum growth condition. Relatively long fibers (average length ${\thickapprox}$ 4 mm) with a mixture of $K_2Ti_4O_9$ (major) and $K_2Ti_6O_{13}$ (minor) could be obtained when the reaction was carried out for the $K_2MoO_4-$K_2O{\cdot}4TiO_2$ (F : R = 7 : 3) system, but for the $K_2$MoO_4$-$K_2O{\cdot}6TiO_2$ (F : R = 7: 3) one, only the short fibers with ${\thickapprox}$ 2 mm long could be grown as the mixed phase of $K_2Ti_6O_{13}$ and $K_2Ti_4O_9$.

• Journal of the Korean Ceramic Society
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• v.31 no.9
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• pp.995-1004
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• 1994

Phase relation and microwave dielectric properties of the system BaO.(Nd1-xSmx)2O3.TiO2 (n=4, 5) were studied. With n=5 (1 : 1 : 5), Ba2Ti9O20 and TiO2 formed in case of X$\leq$0.7, and Ba2Ti9O20 and Sm2Ti2O7 formed at X=1.0 as the second phases dispersed in fine-grained orthorhombic matrix phase. With n=4 (1 : 1 : 4). on the contrary, only fine grains of an ortho-rhombic phase were observed irrespective of Nd/Sm ratio. The compositions of these two stable orthorombic phases having distinct lattic constants even with the same Nd/Sm ratio were estimated as 4BaO.5(Nd1-xSmx)2O3.18TiO2 and BaO.(Nd1-xSmx)2O3.4TiO2 with n=5 and n=4 in the system BaO.(Nd1-xSmx)2O3.TiO2, respectively. Consequently the composition BaO.(Nd1-xSmx)2O3.5TiO2 lies in the compatible triangle of 4BaO.5(Nd1-xSmx)2O3.18TiO2 and the second phases mentioned above. The microwave dielectric properties (~4 GHz) of BaO.(Nd1-xSmx)2O3.5TiO2 can be controlled effectively by adjusting Sm content : with increasing X from 0 to 0.7, both dielectric constant and the temperature coefficient of resonant frequency decreased monotonically from 82 to 65 and from 91 (ppm/$^{\circ}C$) to -19(ppm/$^{\circ}C$), respectively, while unloaded Q(Qo) remained constant at about 2,600.

• Bulletin of the Korean Chemical Society
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• v.28 no.4
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• pp.581-588
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• 2007

To enhance the photodecomposition of concentrated ammonia into N2, Pt/V-TiO2 photocatalysts were prepared using solvothermal and impregnation methods. Nanometer-sized particles of 0.1, 0.5 and 1.0 mol% V-TiO2 were prepared solvothermally, and then impregnated with 1.0 wt% Pt. The X-ray diffraction (XRD) peaks assigned to V2O5 at 30.20 (010) and Pt metal at 39.80 (111) and 46.20 (200) were seen in the 1.0 wt% Pt/ 10.0 mol% V-TiO2. The particle size increased in the order: pure TiO2, V-TiO2 and Pt/V-TiO2 after thermal treatment at 500 °C, while their surface areas were in the reverse order. On X-ray photoelectron spectroscopy (XPS), the bands assigned to the Ti2p3/2 and Ti2p1/2 of Ti4+-O were seen in all the photocatalysts, and the binding energies increased in the order: TiO2 < Pt/V-TiO2 < V-TiO2. The XPS bands assigned to the V2p3/2 (517.85, 519.35, and 520.55 eV) and V2p1/2 (524.90 eV) in the V3+, V4+ and V5+ oxides appeared over V-TiO2, respectively, while the band shifted to a lower binding energy with Pt impregnation. The Pt components of Pt/ V-TiO2 were identified at 71.60, 73.80, 75.00 and 76.90 eV, which were assigned to metallic Pt 4f7/2, PtO 4f7/2, PtO2 4f7/2, and PtO 4f5/2, respectively. The UV-visible absorption band shifted closer towards the visible region of the spectrum in V-TiO2 than in pure TiO2 and; surprisingly, the Pt/V-TiO2 absorbed at all wavelengths from 200 to 800 nm. The addition of vanadium generated a new acid site in the framework of TiO2, and the medium acidic site increased with Pt impregnation. The NH3 decomposition increased with the amount of vanadium compared to pure TiO2, and was enhanced with Pt impregnation. NH3 decomposition of 100% was attained over 1.0 wt% Pt/1.0 mol% V-TiO2 after 80 min under illumination with 365 nm light, although about 10% of the ammonia was converted into undesirable NO2 and NO. Various intermediates, such as NO2, -NH2, -NH and NO, were also identified in the Fourier transform infrared (FT-IR) spectra. From the gas chromatography (GC), FT-IR and GC/mass spectroscopy (GC/MS) analyses, partially oxidized NO and NO2 were found to predominate over V-TiO2 and pure TiO2, respectively, while both molecules were reduced over Pt/V-TiO2.

• Journal of the Korean Ceramic Society
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• v.35 no.8
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• pp.775-782
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• 1998

This experiment is third study concerning BaO-{{{{ { { Pr}_{ 2} O}_{3 } }}-{{{{ { TiO}_{2 } }} (Ln=Sm, Nd, Pr, La..) system which is known to show a high dielectric constant and Q value in microwave dielectric materials. The process of cry-stallization and the microwave dielectric properties of the specimens sintered at 1220-140$0^{\circ}C$ for 2 hr was investigated in the BaO-(Na,{{{{ { { Pr})_{2 }O }_{3 } }}-{{{{ { TiO}_{2 } }} as well as BaO-{{{{ { { Pr}_{ 2} O}_{3 } }}-{{{{ { TiO}_{2 } }} system. The single phase BaPr2Ti5O14 and Ba(Nd,{{{{ { { Pr})_{2 }O }_{3 } }}Ti5O14 was finally formed from the Pr2Ti2O7 (Nd, Pr)2Ti2O7 as a secondary phase in the BaO-{{{{ { { Pr}_{ 2} O}_{3 } }}-{{{{ { TiO}_{2 } }} and BaO-(Nd, {{{{ { { Pr})_{2 }O }_{3 } }}-{{{{ { TiO}_{2 } }} system respectively The dielectric constant of the specimens sint-ered at 1280~131$0^{\circ}C$ showed the maximum value as 105(BaO-{{{{ { { Pr}_{ 2} O}_{3 } }}-{{{{ { TiO}_{2 } }} system) and 88 (BaO-(Nd,{{{{ { { Pr})_{2 }O }_{3 } }}-{{{{ { TiO}_{2 } }} system) and the Q values of them showed higher value than 1800 which are due to the maximum den-sity. However the dielectric properties of the specimens sintered at higher temperature than 131$0^{\circ}C$ were reduced due to the increases of pore which were resulted from the sudden grain growth.

• Electrical & Electronic Materials
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• v.10 no.8
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• pp.819-829
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• 1997

The microwave dielectric materials of the BaO-Nd$_2$O$_3$-TiO$_2$and BaO-(Sm, Nd)$_2$O$_3$-TiO$_2$system were synthesized by conventional ceramic processing and sintered 1220 to 140$0^{\circ}C$ for 2 hours respectively. Their crystallization and dielectric properties were examined. In the BaO-Nd$_2$O$_3$-TiO$_2$ and BaO-(Sm, Nd)$_2$O$_3$-TiO$_2$system. Nd$_2$Ti$_2$O$_{7}$ and (Sm, Nd)$_2$Ti$_2$O$_{7}$ were observed as a second phase respectively. The maximum relative dielectric constant were 79,99 for the BaO-Nd$_2$O$_3$-TiO$_2$system and 105.07 for the BaO-(Sm,Nd)$_2$O$_3$-TiO$_2$system and their Q-value were over 2000 at 3GHz.GHz.

• Journal of the Korean Ceramic Society
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• v.38 no.5
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• pp.412-417
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• 2001

본 연구는 습식법으로 수산화 알루미늄과 티타니아를 출발물질로 하여 $Al_2$O$_3$-TiO$_2$복합분체를 제조하였으며, 2 mol의 Al(OH)$_3$분말에 대하여 TiO$_2$분말량을 1, 3, 5, 7, 9, 11 wt%로 첨가하여 $Al_2$O$_3$-TiO$_2$복합분체의 특성을 조사하였다. 제조된 $Al_2$O$_3$-TiO$_2$계 복합분체는 $700^{\circ}C$~140$0^{\circ}C$까지 하소하여 XRD 분석을 한 결과 100$0^{\circ}C$까지는 TiO$_2$(rutile)상과 η-Al$_2$O$_3$상이 공존하다가 110$0^{\circ}C$부터 130$0^{\circ}C$까지는 η-Al$_2$O$_3$에서 $\alpha$-Al$_2$O$_3$로의 상전이가 일어나서 $\alpha$-Al$_2$O$_3$상과 TiO$_2$(rutile)상이 나타났으며 하소온도 140$0^{\circ}C$, TiO$_2$첨가량이 5 wt%일 때부터 $Al_2$TiO$_{5}$가 생성되기 시작하였다. TiO$_2$첨가량에 따른 비표면적값은 첨가량이 7 wt%까지는 감소하였으나 그 이상 첨가시 증가하였다. 입도분석 결과 평균입경은 15.74~23.21$mu extrm{m}$로서 TiO$_2$첨가량이 3 wt%일 때 가장 작은 값을 가졌으며 TiO$_2$첨가량은 5 wt% 이상부터 점차 감소하였다.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.18 no.8
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• pp.1102-1107
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• 1993

Microwave dielectric properties of CaTiO3 and CaTiO3-TiO2 ceramics for the composition range between 40 and 50 mol% CaO in CaO-TiO2 binary system were investigated. CaTiO3 ceramics with50 mol% CaO showed the dielectric constant (e,) of 178, the temperature coefficient of resonant frequency(c,) of+1000 ppm/'c and the qualify factor Q of 2760 (f0=2.7 GHz ). Dielectric constant and temperature coefficient of resonant frequency of ceramics with dual phases of CaTiO3 and TiO2 decreased gradually from those of CaTiO3 as the CaO content decreased. Q value and density were found to have minimum at the composition of 47 mol% CaO. The degradation of Q value and density in dual phase ceramics seems to be caused by the large pores at grain boundaries and/or within grains remained after rapid growth of CaTiO3 grains as TiO2 Phase decreased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.298-298
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• 2007

Influence of $TiO_2$ on the dielectric properties of the $Bi(Nb_{0.7}Ta_{0.3})O_4$ ceramic with 7 wt% zinc borosilicate(ZBS) glass was investigated as a function of the $TiO_2$ contents with a view to applying this system to LTCC technology. The $Bi(Nb_{0.7}Ta_{0.3})O_4$ ceramic addition of 7 wt% ZBS glass ensured successful sintering below $900^{\circ}C$. But, TCF of $Bi(Nb_{0.7}Ta_{0.3})O_4$ ceramic is large negative values, respectively, it is necessary to adjust to zero TCF for practical applications Therefore, the addition of materials having positive TCF, such as $TiO_2$, might be an effective method for the improvement. In general, increasing addition of $TiO_2$ increased dielectric constant and TCF but it decreased the sinterability and $Q{\tiems}f$ value significantly due to the dielectric property and high sintering temperature of $TiO_2$. $Bi(Nb_{0.7}Ta_{0.3})O_4$ ceramic with 7 wt% ZBS glass and then addition 0.5 wt% $TiO_2$ sintered at $900^{\circ}C$ demonstrated 42 in the dielectric constant(${\varepsilon}_r$), 1,000 GHz in the $Q{\times}f$ value, and $10{\pm}5\;ppm/^{\circ}C$ in the temperature coefficient of resonant frequency(${\tau}_f$).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.1
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• pp.7-10
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• 2002

$TiO_2$ thin films were prepared by coating and subsequent pyrolysis processes using Titanium-naphthenate as a raw material. $TiO_2$ thin films were made by spin-coating technique on the glass substrates, and heat treated at 45$0^{\circ}C$, The transmittance, refractive index, crystallinity and surface morphology of the $TiO_2$ thin films were measured by UV/Vis spec trophotometer, x-ray diffractometer and scanning electron microscope. $TiO_2$thin films on the slide glass showed the trans mittance of 70-90% and refractive index of 2.6 at 420 nm. The results of XRD and SEM showed that the $TiO_2$ thin films exhibited the anatase phase and the thread-like surface morphology.